Power Semiconductors

Transcription

1 Innovating Energy Technology ower Semiconductors May 2013 IGTs. MOSFETs. IGT-s TIM Thermal Interface Material 3 I M (ower Integrated Module) ack, Standard ackages 2-ack, 8 Chopper Modules 8 Solder pins & ssfit contacts Solder pins & ssfit contacts 7 Spring- & in-type Standard 1- & 2-ack, -Series 9 rovisorisches ild Standard 1- & 2-ack, -Series 10 High ower Modules 1- & 2-ack 11 High ower Modules 2-ack & Chopper 12 I M (Intelligent ower Modules) IGT-Modules for 3-Level Inverters 15 Discrete IGTs & Reverse locking Discrete IGTs 16 Super Junction- MOSFETs 17 IGT-s For latest online-version

2 2 Mi 450 H Device type Mi MR M Suffix -50=RoHS compliant... CE X10 = Max. : 060= = = =3300 ackage Style IGT -Series (here -Series) / IGT-Technology Rated current I [A] C : Standard IGT module (M = IGT) : IM IGT (ower Integrated Module) : IM IGT (Intelligent ower Module) umber of IGT-switches (not chips) Type name IGT development lanar Gate -Series 3rd Generation T-Epi S-Series 4th Generation T 1998 Trench Gate /4-Series 5th Generation Field-Stop Series 6th Generation Field-Stop Gate Emitter Gate Emitter Gate Emitter Gate Emitter 1Mi... 1Mi... 2Mi... 6Mi... 7MR... I M 6M... I M IGTs T1 IGTs for 3-Level for 3-Level Inverters Inverters M 1 phase 3 phase Reverse locking IGT 4Mi... T2 Reverse locking IGT M T1u T2u 7M... 12Mi... T1v T2v T1w T2w Chip thickness + - drift + buffer + substrate Collector + - drift + substrate Collector + - drift - field stop Collector + Collector + - drift + field stop Collector

3 Available modules with TIM -applied Thermal Interface Material (TIM) The ongoing increase of power densities within the thermal interface between power module and heat sink requires an optimized thermal distribution. Fuji Electric has developed the pre-applied thermal interface material (TIM) which achieves a stable quality and reproducible thermal performance level of power electronic devices. TIM not only provides a significant low thermal resistance, it also fulfills the highest quality standards given for power modules to achieve the longest lifetime and highest system reliability. ith spring contacts , -Series 2Mi 450J Features + Optimized for Fuji Modules + Increase lifetime of IGT + Advanced IGT power density rocess - enefits + Outsourcing a dirty process + Stable quality level + Increased system reliability Thermal - enefits + Higher thermal conductivity + Decrease Rth-value significanly 6-ack 2-ack ith solder pins T1 T C5 C3 C1 G5 G3 G1 E5 1 E3 1 E G6 G4 G2 E6 E4 E2 _ Mi 600J Mi Mi Mi Mi Mi Mi Thermal Resitance R [ C cm /]. T 0,30 0,25 0,20 0,15 0,10 0,05 Thermal Resitance vs. pressure Grease 1 (1.0 /mk) Grease 2 (2.0 /mk) Fuji TIM (3.4 /mk) /cm 3

4 IM IGTs ( ower I ntegrated M odule) 1 (-Series) (-Series) 10A MR 10KA MR 10KA ith ssfit Contacts 2 15A 20A 30A 15A 7MR 15KA MR 20KA MR 30KA MR 15KA MR 15K MR 25K MR 35K MR 50K A 7MR 10KC MR 10KC A 7MR 15KC MR 15KC ith Solder ins 4 20A 30A 15A 7MR 20KC MR 30KC MR 15KD MR 25KD MR 35KD MR 50KD ack configuration is under development

5 IM IGTs ( ower I ntegrated M odule) / Solder pins 5 ith solder pins S 1 R T R S Fuji Electric 1 T 1 R R 1 S S T R S T R R S M T T R S T 1 1 R S T 1 1 R S T 1 1 R S T 1 1 R S T 1 1 R S T (-Series) 7MR 50A MR MR MR MR MR MR 100R MR 150R (-Series) 7MR MR MR MR MR MR 25M MR 35M MR 50M MR MR MR MR MR MR MR MR 50R MR 75R MR 100R MR 150R

6 6 IM IGTs ( ower I ntegrated M odule) / ssfit contacts R S T 1 R S T 600 (-Series) 1200 (-Series) 7MR MR MR ith ssfit contacts M722 X S R T R S M722 Z R S T T Y R S T 1 1 R S T 1 1 R S T 1 7MR 75Y MR 100Y MR 100Z MR 50X MR 75X MR 100X MR 150X MR 25Y MR 35Y MR 50Y MR 50Y MR 50Z MR 75Z MR 100Z MR 150Z MR 150Z

7 6-ack IGTs 15 Fuji Electric 600 (-Series) 6Mi 50A (-Series) 6Mi 50A (-Series) ith solder pins ith ssfit contacts High ower X T1 T C5 C3 C1 G5 G3 G1 E5 1 E3 1 E G6 G4 G2 E6 E4 E2 _ 1 180A 1 180A Mi 75A Mi 100A Mi Mi Mi Mi Mi 150X Mi 75A Mi 100A Mi Mi Mi Mi Equivalent to by lower R th 6Mi Mi Mi Mi 100X Mi 150X Mi 180X Mi 180X Equivalent to by lower R th 6Mi Mi Mi Mi Mi Mi Mi Mi

8 ack IGTs, Spring- & in-type 20 Spring Contacts Soldering ins (-Series) 2Mi 225J Mi 300J Mi 450J Mi 600J Mi Mi Mi Mi (-Series) 2Mi 550J Mi Mi Mi Mi Chopper (Standard and High Speed IGTs) 22 lanar-t High Speed-Series 1200 (-Series) 1Mi 504F-120L-50 1Mi 754F-120L-50 (-Series) Chopper Mi 200HH-120L-50 1Mi 300HH-120L-50 1Mi 1004F-120L-50 1Mi 2004H-120L-50 1) 1Mi 150A-120L-50 * 1Mi 400HH-120L-50 1) ithout thermistor *) nder development

9 1- & 2-ack IGTs, -Series lanar-t (2-Series) 2Mi 100TA (-Series) 2Mi 754A-120 2Mi 1004A lanar-t High Speed-Series 1700 (-Series) 1 2Mi 1502A Mi 1504A a c k Mi 2002A Mi Mi Mi Mi Mi 1504H Mi 2004H Mi 100H Mi 150HH Mi 200HH Mi 2004H-170 2Mi 3004H Mi 3004H Mi 4004H Mi 3004E-120 2Mi 4004H Mi 4504E Mi 6002E-060 1Mi a c k 29 1Mi Mi Mi A 1Mi

10 1- & 2-ack Module, Fuji Electric 1) -series (-Series) 2Mi 100A Mi 150A Mi (-Series) 2Mi 75A Mi 100A Mi 150A Mi Mi (-Series) 2Mi 75A Mi 100A Mi 150A ) Improved package concept with -series Chips Lower CE, sat, lower power losses, fast switching Improved thermal cycling capability Significantly lower internal inductance T = 175 C j, max 10 2Mi a c k Mi Mi 400D Mi 600D Mi 300D Mi 400D Mi 200H Mi 150H Mi 200H Mi 300H Mi 300H Mi 450H Mi 300E Mi 450E ack A 2Mi 600E Mi 600E Mi Mi Mi

11 High ower Modules 1- & 2-ack ith Cu-baseplate (-Series) -type (Soft turn-off) 2Mi 600G-120 ith Cu-baseplate (-Series) E-type (Low switching losses) 2Mi 600G-170E 1700 ith AlSiC-baseplate (-Series) E-type (Low switching losses) 2Mi 600T-170E 3300 ith AlSiC-baseplate (-Series) 1 - a c k 2-ack A 1 800A 1000A Mi 800G-120 2Mi 1200G-120 1Mi 1200C-120 1Mi 1600C-120 1Mi 2400C-120 2Mi 800G-170E 2Mi 1200G-170E 1Mi 1200C-170E 1Mi 1600C-170E 1Mi 2400C-170E 2Mi 800T-170E 2Mi 1200T-170E 1Mi 1200R-170E 1Mi 1600R-170E 1Mi 2400R-170E 1Mi 800G-330 1Mi 1000G-330 1Mi 1200E A 1Mi 1500E Mi 2400D-120 1Mi 2400D-170E 1Mi 2400S-170E 3 1Mi 3600D-120 1Mi 3600D-170E 1Mi 3600S-170E 11

12 High ower Modules, 2-ack & Chopper 39 (-Series) E-type (Low switching losses) 2Mi 600XA-120E (-Series) (Soft turn-off) -type (-Series) (Low switching losses) E-type 1700 (-Series) (Soft turn-off) -type 12 2-ack 6 2Mi 650XA-170E-50 2Mi 650XA-170EA-50 ( ith large Free heeling Diode) 900A 2Mi 900XA-120E-50 2Mi 900XA Chopper Configuration L Configuration H 6 6 1Mi 650XA-170EL-50 1Mi 650XA-170EH-50 2-ack A 1 2Mi 1400X-120E-50 2Mi 1400X Mi 1000X-170E-50 2Mi 1000X * 2Mi 1000X-170EA-50 ( ith large Free heeling Diode) 2Mi 1400X-170E-50 2Mi 1400X Configuration L 1000A 1Mi 1000X-170EL-50 Chopper Configuration H A 1Mi 1400X-120L-50 1Mi 1400X-170EL-50 * 1Mi 1000X-170EH Mi 1400X-120H-50 1Mi 1400X-170EH-50 * All devices are available with indication of CE,sat & F for optimum paralleling ( suffix -54 instead of -50) *) nder development

13 IM IGT (Intelligent ower Module), -Series 41 ithout rake-chopper ithout rake-chopper ithout rake-chopper ith High oltage -IC Fuji Electric Ic- & Tj-Sensors on Chip Ic- & Tj-Sensors on Chip High-side supply voltage ias voltage Signal input Low-side supply voltage Signal input for low side Fault status output High-side supply voltage ias voltage Signal input Low-side supply voltage Signal input for low side Fault status output Temperature sensor output Supply voltage cc cc cc Signal input in in in GD GD GD Supply voltage CCL inx Signal input iny - for low side inz R ALM Tj-sensor Alarm output ALM IC-sensor GD Supply voltage CCL Alarm output ALM GD CCH H H I H -IC I H -IC I H GD CCL I L I L I L - CCH H H I H -IC I H -IC I H GD CCL I L I L I L - RALM Alarm output Alarm output Alarm output cc in GD inx cc in GD iny uilt-in protection functions Fault status output (Alarm) nder voltage protection (self shutdown) Short circuit protection (self shutdown) Overheating protection (self shutdown) Temperature sensor function ( temp,out) RALM RALM RALM cc in GD inz H -IC H -IC Tj-sensor IC-sensor GD GD 15A 20A 30A 15A 20A 30A 10A 15A 20A 30A 600 -Series 6M 15RA M 20SA M 30SA M 15RC M 20SC M 30SC M 20AA M 30AA M 50AA M 50A M 75A Series 6M 10AA M 15AA M A M 25A M 35A M 50A

14 IM IGT (Intelligent ower Module), -Series 44 ithout rake-chopper ith rake-chopper ithout rake-chopper Ic- & Tj-Sensors on Chip 45 Ic- & Tj-Sensors on Chip Fuji Electric Supply voltage CCL Alarm output ALM Signal input in GD RALM Supply voltage CCL Alarm output ALM GD Supply voltage CCL Alarm output ALM GD RALM Alarm output Alarm output Alarm output RALM Alarm output Alarm output Alarm output cc in GD inx cc in GD inx cc in GD inx cc in GD iny uilt-in protection functions Fault status output (Alarm) nder voltage protection (self shutdown) Short circuit protection (self shutdown) Overheating protection (self shutdown) Temperature sensor function ( temp,out) RALM RALM RALM cc in GD iny RALM RALM RALM cc in GD iny cc in GD inz RALM RALM RALM cc in GD inz Alarm output Alarm output Alarm output cc in GD inz Tj-sensor IC-sensor Tj-sensor IC-sensor Tj-sensor IC-sensor Series 6M 50DA M 75DA M 100DA M 150DA M 200DA M 50DA M 75DA M 100DA M 150DA M 200DA M 200EA M 300EA M 400EA Series 6M 25DA M 35DA M 50DA M 75DA M 100DA M 25DA M 35DA M 50DA M 75DA M 100DA M 100EA M 150EA M 200EA ith rake-chopper Supply voltage CCL Alarm output ALM Signal input in GD RALM Alarm output Alarm output Alarm output cc in GD inx RALM RALM RALM cc in GD iny cc in GD inz Tj-sensor IC-sensor 1 7M 200EA M 300EA M 400EA M 100EA M 150EA M 200EA

15 IGT-Modules for 3-Level-Inverters 46 Solder ins 3 hase 47 Fuji Electric ssfit Contacts M M T1u T2u T1u T2u T1v T2v T1v T2v T1w T2w T1w T2w T1&T2=600 T1&T2=1200 T1&T2=1700 (-Series) & & & (-Series) (-Series) 12Mi * 12Mi * 12Mi Mi 50X * 12Mi 75X * 12Mi 100X M Reverse locking IGT I-Type T1 T2 T1 4Mi 400G-060R Mi 300G-120R-50 4Mi 300G-120R1-50 4Mi 400G-120R Mi 200G-170R2-50* hase M T2 4Mi 600C * 1200 T-Type M M Reverse locking IGT T1 T A 4Mi R1-50* 4Mi R1-50* 4Mi R1-50* Mi R2-50* Mi R2-50* 1200 * ) nder development 15

16 Discrete IGTs TO Fuji Electric G C E ithout Free heeling Diode ith Free heeling Diode 15A 30A 40A 15A 30A 40A Low loss -series FG30 60D 1) FG50 60D 1) FG75 75D 1) FG15 120D 1) FG25 120D 1) FG40 120D 1) High speed -Series FG15 120H FG30 120H FG35 60H FG40 120H FG50 60H FG75 60H FG15 120HD 2) FG30 120HD 2) FG35 60HD 2) FG40 120HD 2) FG50 60HD 2) FG75 60HD 2) 1) ith Soft Recovery Diode 2) ith ltrafast Diode 16 Reverse locking Discrete IGTs TO A 85A FG40 60 R * FG85 60 R TO-3L FGK R * * ) nder development

17 R DS(on) max. Fuji Electric Super-Junction MOSFET TO TO-3 TO-220A TO-220F(SLS) I D max G D S min G D S min G D S min G D S m 68A FM 7960S1 HF 70m 47A FM 4760S1 HF FMH 4760S1 FMH 4760S1 HF 125m 30A FM 3060S1 HF FMH 3060S1 FMH 3060S1 HF FM 3060S1 FM 3060S1 HF FM 3060S1 FM 3060S1 HF 190m 20A FM 2060S1 HF FMH 2060S1 FMH 2060S1 HF FM 2060S1 FM 2060S1 HF FM 2060S1 FM 2060S1 HF Suffix HF = b free lead terminal; RoHS compliant; uses Halogen-free molding compound 17

18 Max ces(igt) IGT-s Output current I peak iso,max Max. switching frequency Comment max 43.0 max 26.5 max 1 15 Single LA R - 4A 2.5k 40kHz Single power supply needed with = +20 DC Single s 15.5 max 17.0 max 33.0 max 39.0 max 63.0 max Single LA R - 5A 2.5k 20kHz LA 551K-01R A 83.0 max Single LA R - 12A 4.0k 20kHz 2.5k 20kHz - LA 500K-01R 12A 4.0k 20kHz uilt-in ower supply uilt-in ower supply 17.0 max 88.0 max Single 42.0 max - LA R 24A 4.0k 10kHz uilt-in ower supply 1 30 Dual LA R - 5A 2.5k 20kHz uilt-in ower supply Dual Dual LA R - - LA R 24A 24A 4.0k 4.0k 5kHz 5kHz uilt-in ower supply