Power Semiconductors

Transcription

1 Innovating Energy Technology pdate 26th May 2015 TIM Thermal Interface Material ower Semiconductors IGTs. MOSFETs. SiC Schottky Diodes 3 IGT-Modules for 3-Level Inverters 4 IGT-Hybrid Modules with SiC Schottky arrier Diodes 6 I M ower Integrated Modules. IGT-s ack, Standard ackages Solder pins & ssfit contacts 11 2-ack, 12 Spring-, in- & ssfit contacts rovisorisches ild Standard 1- & 2-ack, -Series Chopper Modules High ower Modules High ower Modules I M, 1700 & ack & Chopper Intelligent ower Modules Click on a figure for a specific page Fuji Electric Europe GmbH Discrete IGTs, standard 20 Super Junction- MOSFETs 21 SiC Schottky arrier Diodes 22 IGT-s 23 and Reverse locking IGT with & without FRED Goethering 58 D Offenbach am Main GERMY Tel.: +49(0) Fax: +49(0) info.semi@fujielectric-europe.com

2 2 Mi 450 H Device type Mi MR M umber of IGT-switches (not chips) Suffix -50=RoHS compliant oltage class: 060= 120= 170= =3300 ackage Style IGT -Series (here -Series) / IGT-Technology Current class I C []... : Standard IGT module (1-, 2- and 6-ack) : IM IGT (ower Integrated Module) : IM IGT (Intelligent ower Module) MS i, MS R : The "S" instead of "" indicates Hybrid module with Si-IGT & SiC Schottky Free heeling Diodes 1Mi... 1Mi... 2Mi.../ 2MSi... 6Mi.../ 6MSi 7MR... / 7MSR... IM Fuji Electric 1. Modules with Standard IGT-Chips 6M... IM Intelligent ower Module bout type name 2. oltage classification of modules with Reverse locking IGT 4 Mi 300 G -120 R1-50 oltage class of the Standard IGTs T1 & T2 060= 120= 170=1700 IM ower Integrated Module 7M... oltage class of the R-IGTs & R = R1= 900 R2= IGTs for 3-Level Inverters 1 phase Chip thickness Reverse locking IGT (R-IGT) M IGT development lanar Gate -Series 3rd Generation T-Epi Gate + Emitter - drift + buffer + substrate Collector T1 T2 S-Series 4th Generation T 1998 Trench Gate /4-Series 5th Generation Field-Stop Series 6th Generation Field-Stop 2009 Gate Emitter Gate Emitter Gate Emitter + - drift + substrate Collector + - drift - field stop Collector + Collector + - drift + field stop Collector 2

3 -applied Thermal Interface Material (TIM) Optimized for Fuji Electric's Modules TIM Significant Lower R th Lower T & smaller DT j j at same current/load Enables higher current/load at same Tj Significant higher power cycling lifetime Improved cost/performance ratio The ongoing increase of power densities within the thermal interface between power module and heat sink requires an optimized thermal distribution. Fuji Electric has developed the pre-applied thermal interface material (TIM) which achieves a stable quality and reproducible thermal performance level of power electronic devices. TIM provides a significantly low thermal resistance and fulfills the highest quality standards given for power modules to achieve the longest lifetime and highest system reliability. The range of modules with TIM is being continually expanding Features + Optimized for Fuji Modules + Increase lifetime of IGT + dvanced IGT power density rocess - enefits + Outsourcing of a dirty process + Stable quality level + Increased system reliability Thermal - enefits + Higher thermal conductivity + Decrease Rth-value significantly For latest availablity status please contact us Tel.: +49(0) info.semi@fujielectric- europe.com 3

4 IGT-Modules for 3-Level-Inverters Solder ins R-IGT=Reverse locking IGT 1 T1&T2= T1&T2= T1&T2=1700 & & & 12Mi M R-IGT T1u R-IGT T1v R-IGT T2u T2v T1w T2w 12Mi hase 2 ssfit Contacts R-IGT=Reverse locking IGT 12Mi Mi 50X M R-IGT T1u R-IGT T1v R-IGT T2u T2v T1w T2w 12Mi 75X Mi 100X hase 3 4 ssfit Contacts R-IGT=Reverse locking IGT Reverse locking IGT M R-IGT T1 T2 T Mi 400G-060R-50 4Mi 300G-120R-50 4Mi 300G-120R1-50 4Mi 340F-120R-50 4Mi 400F-120R-50 4Mi 300X-120S Mi 220F-170R2-50* M C T Mi 400X-120S-50 *) nder development 4

5 IGT-Modules for 3-Level-Inverters 5 I-Type T1 T1&T2= & T1&T2=1700 & T Mi M hase 6 I-Type M T Mi C * T2 T-Type M M Reverse locking IGT R-IGT T1 T Mi R1-50 4Mi R1-50 4Mi R Mi R2-50* 4Mi -170R2-50* *) nder development C-Switch 7 C1 2-ack G1 E1 E2 E2 G2 4 2Mi 450H-120F-50 C2 E1 5

6 IGT Hybrid Modules with SiC-SD 8 6-ack IM R S T 1 R S T MSR MSR MSR MSR MSR MSi MSi 200H * 2MSi H * MSi 450H * 400 2MSi 400E ack MSi T-170* MSi 1000X * MSi 1400X * 2MSi 1400X * Suffix -53 = ith CE,sat & rank label *) nder development 6

7 Small IM IGTs ( ower I ntegrated M odules) MR 10K MR 10K ith ssfit Contacts MR 15K MR 20K MR 30K MR 15K MR 15K MR 25K MR 35K MR 50K MR 10KC MR 10KC MR 15KC MR 15KC ith Solder ins MR 20KC MR 30KC MR 15KD MR 25KD MR 35KD MR 50KD

8 IM and 6-CK IGTs with -Series IGT MiniSKii compatible 18 MiniSKii 1 Standard pressure lid=suffix -50 Slim pressure lid=suffix IM-IGT MR 8J MR 8J MR 15J MR 15J MiniSKii 2 MiniSKii Standard pressure lid=suffix Standard pressure lid=suffix Slim pressure lid=suffix -53 Slim pressure lid=suffix IM-IGT IM-IGT 6-CK-IGT 1 7MR 25J MR 25J MR 35J MR 35J ) 7MR 35J MR 35J ) 7MR 50JC MR 50JC MR 75JC MR 75JC MR 100JC MR 100JC MI 100JC * 6MI 100JC * 6MI 150JC * 6MI 150JC * MiniSKii is a trademark of SEMIKRO Elektronik GmbH & Co. KG - Germany 1) ith larger rectifier diodes *) nder development 8

9 IM IGTs ( ower I ntegrated M odule) with Solder pins 21 ith solder pins S 1 R T R S Fuji Electric 1 T 1 R R 1 S S T R S T R S T T R S T 1 1 R S T 1 1 R S T 1 1 R S T 1 1 R S T 1 1 R S T MR MR MR MR MR MR MR 100R MR 150R MR MR MR MR MR MR 25M MR 35M MR 50M MR MR MR MR MR MR MR MR 50R MR 75R MR 100R MR 150R

10 IM IGTs ( ower I ntegrated M odules) with ssfit contacts 27 ith ssfit contacts M722 S R M T R 1 1 S R S T R S T T R S T 1 1 R S T 1 1 R S T 1 1 R S T MR 75Y MR 100Y MR 100Z MR 150Z MR MR MR MR 50X MR 75X MR 100X MR 150X MR 25Y MR 35Y MR 50Y MR 50Y MR 50Z MR 75Z MR 100Z MR 150Z

11 6-ack IGTs 31 Fuji Electric Mi Mi ith solder pins ith ssfit contacts High ower ith Solder ins or with ssfit Contacts T1 T C5 C3 C1 G5 G3 G1 E5 1 E3 1 E G6 G4 G2 E6 E4 E2 _ ith solder pins ith ssfit contacts Mi Mi Mi Mi Mi Mi Mi 150X Mi Mi Mi Mi Mi Mi Equivalent to 200 by lower R th 6Mi Mi Mi Mi 100X Mi 150X Mi 180X Mi 180X Equivalent to 200 by lower R th 6Mi Mi Mi Mi Mi 225Y * 6Mi 300Y * 6Mi 450Y * 6Mi 550Y * 6Mi 100X Mi Mi Mi 225Y * 6Mi 300Y * 6Mi 450Y * 6Mi 550Y * *) nder development 11

12 2-ack IGTs with Spring-, in- & ssfit contacts 36 Solder ins Spring Contacts ith Si-Substrate 20% Lower thermal impedance 2Mi 225J Mi 300J Mi 450J Mi J Mi Mi S-50 2Mi Mi S-50 2Mi Mi S Mi 550J Mi Mi Mi ssfit Contacts Mi 225X Mi 300X Mi 450X Mi Mi X Mi 225X Mi 300X Mi 450X Mi 550X

13 1- & 2-ack, -Series IGTs ack 2-ack Fuji Electric lanar-t High Speed-Series 2Mi Mi Mi Mi Mi Mi Mi Mi Mi Mi Mi Mi Mi 300D Mi 400D Mi 400D Mi D Mi 100HJ Mi 150HJ Mi 150H Mi 200H Mi 200HJ Mi 200H Mi 300H Mi 300HJ Mi 300H Mi 450H Mi 300E Mi 300E Mi 400E Mi 450E Mi E Mi E Mi Mi Mi

14 High ower Modules 1- & 2-ack ith Cu-baseplate Soft turn-off 2Mi G-120 ith Cu-baseplate 2Mi G-170E Trench-FS (-Series) Trench-FS (-Series) ith lsic-baseplate ith lsic-baseplate ith lsic-baseplate Soft turn-off Low switching losses Low switching losses Low switching losses 2Mi T-170E 1-ack 2-ack Mi 800G-120 2Mi G-120 1Mi C-120 1Mi 1C-120 1Mi 2400C-120 2Mi 800G-170E 2Mi G-170E 1Mi C-170E 1Mi 1C-170E 1Mi 2400C-170E 2Mi 800T-170E 2Mi T-170E 1Mi R-170E 1Mi 1R-170E 1Mi 2400R-170E 1Mi 800G-330 1Mi 1000G-330 1Mi 1200E-330 1Mi 800G-330 1Mi 1000G-330 1Mi 1200E Mi 1500E-330 1Mi 1500E Mi 2400D-120 1Mi 2400D-170E 1Mi 2400S-170E Mi 3D-120 1Mi 3D-170E 1Mi 3S-170E 14

15 High ower Modules, 2-ack & Chopper E-type (Low switching losses) 2Mi X-120E-50 (Soft turn-off) -type (Low switching losses) E-type 1700 (Soft turn-off) -type 2-ack 6 2Mi 650X-170E-50 2Mi 650X-170E-50 ( ith larger Free heeling Diode) 900 2Mi 900X-120E-50 2Mi 900X Mi 650X-170EL-50 Chopper 2-ack Mi 1400X-120E-50 1Mi 900X-120D-50 1Mi 900X-120C-50 2Mi 1400X Mi 650X-170EH-50 2Mi 1000X-170E-50 2Mi 1000X * 2Mi 1000X-170E-50 ( ith larger Free heeling Diode) 2Mi 1400X-170E-50 2Mi 1400X Mi 1000X-170EL-50 Chopper Mi 1400X-120L-50 1Mi 1400X-170EL-50 * 1Mi 1000X-170EH Mi 1400X-120H-50 1Mi 1400X-170EH-50 * bove devices are available with CE,sat & F rank label for optimum paralleling ( suffix -54 instead of -50) *) nder development 15

16 IM IGTs (Intelligent ower Modules), -Series 50 ith High oltage -IC ithout rake-chopper 51 Ic- & Tj-Sensors on Chip High-side upply voltage CCH ias voltage Signal input Low-side supply voltage Signal input for low side Fault output Temperature sensor output H H I H -IC I H -IC I H GD CCL I L I L I L - uilt-in protection functions Fault status output (larm) nder voltage protection (self shutdown) Short circuit protection (self shutdown) Overheating protection (self shutdown) Temperature sensor function ( temp,out) H -IC GD M 15SG M 20S M 30S M 15SH M 20SC M 30SC M ithout rake-chopper ithout rake-chopper 52 Ic- & Tj-Sensors on Chip Supply voltage cc cc cc Signal input in in in GD GD GD Supply voltage CCL inx Signal input iny for low side inz - larm output LM Supply voltage CCL larm output LM LM output LM output LM output GD GD RLM R LM cc in GD inx cc in GD iny cc in GD inz Tj-sensor IC-sensor Tj-sensor IC-sensor M M M M M M M M M M

17 IM IGTs (Intelligent ower Modules), -Series 53 Ic- & Tj-Sensors on Chip ithout rake-chopper 17 Fuji Electric Supply voltage CCL larm output LM LM output LM output LM output GD RLM cc in GD inx cc in GD iny uilt-in protection functions Fault status output (larm) nder voltage protection (self shutdown) Short circuit protection (self shutdown) Overheating protection (self shutdown) Temperature sensor function ( temp,out) cc in GD inz Tj-sensor IC-sensor Trench-FS -Series 6M 50F M 75F M 100F Trench-FS -Series 6M 25F M 35F M 50F ith rake-chopper Supply voltage CCL larm output LM Signal input in GD RLM LM output LM output LM output cc in GD inx cc in GD iny cc in GD inz Tj-sensor IC-sensor 7M 50F M 75F M 100F M 25F M 35F M 50F

18 IM IGTs (Intelligent ower Modules), -Series 54 Ic- & Tj-Sensors on Chip ithout rake-chopper ith rake-chopper ithout rake-chopper ith rake-chopper 55 Fuji Electric Ic- & Tj-Sensors on Chip Supply voltage CCL larm output LM Signal input in Supply voltage CCL larm output LM Signal input in Supply voltage CCL larm output LM GD GD RLM RLM Supply voltage CCL larm output LM LM output LM output LM output GD LM output LM output LM output cc in GD inx cc in GD inx cc in GD iny LM output LM output LM output cc in GD iny uilt-in protection functions Fault status output (larm) nder voltage protection (self shutdown) Short circuit protection (self shutdown) Overheating protection (self shutdown) Temperature sensor function ( temp,out) cc in GD LM output LM output LM output GD RLM RLM cc in GD inx cc in GD inx cc in GD iny cc in GD iny cc in GD inz inz cc in GD inz cc in GD inz Tj-sensor IC-sensor Tj-sensor IC-sensor Tj-sensor IC-sensor Tj-sensor IC-sensor M 50D M 75D M 100D ) 6M 100D M 150D M 150D ) 6M 200D M 200D ) 7M 50D M 75D M 100D M 100D ) 7M 150D M 150D ) 7M 200D M 200D ) 6M 200E M 300E M 400E M 200E M 300E M 400E M 25D M 35D M 50D M 50D ) 6M 75D M 75D ) 6M 100D M 100D ) 7M 25D M 35D M 50D M 50D ) 7M 75D M 75D ) 7M 100D M 100D ) 6M 100E M 150E M 200E M 100E M 150E M 200E ) ith high thermal performance 18

19 Chopper (Standard and High Speed IGTs) 56 lanar-t High Speed-Series Trench-FS (-Series) 1Mi 504F-120L-50 1Mi 754F-120L-50 1Mi 1004F-120L-50 Chopper Mi 200HH-120L-50 1Mi 2004H-120L-50 ithout thermistor 1Mi -120L-50 1Mi L-50* 1Mi 300HH-120L Mi 400HH-120L-50 *) nder development 19

20 Discrete IGTs TO Fuji Electric G C E Reverse locking IGT ithout Free heeling Diode ith Free heeling Diode Trench-FS, -Series Trench-FS, -Series Trench-FS, -Series Low loss,~10khz High speed, 10~30kHz ltra high speed, 20~100kHz 650 FG 30 60D FG 50 60D FG D FG D FG D FG 35 60H FG 50 60H FG 75 60H FG 35 60HD FG 35 60HC 1) FG 50 60HD FG 50 60HC 1) FG 75 60HD FG 75 60HC 1) FG H FG H FG H FG HD FG HD FG HD FG * FG * FG * FG * FG 30 65D * FG 40 65D * FG 50 65D * FG 60 65D * FG FG FG D FG D *) nder development 1) ith full rating free wheeling diode TO G C E 85 FG 85 60R

21 Super-Junction MOSFET TO-247 TO-3 TO-220 TO-220F(SLS) D2-ack 15.9 G D S 19.5 min G 15.5 max D S min G D S 15 min G D S D G D S I D R DS(on),max. ith built-in FRED type m FM 79 60S1 58 m FM 57 60S1 70 m FM 47 60S1 88 m FM 40 60S1 99 m FM 35 60S1 125 m FM 30 60S1 160 m FM 22 60S1 190 m FM 20 60S1 230 m FM 15 60S1 280 m 380 m 470 m 580 m 42 m FM 79 60S1 FD 58 m FM 57 60S1 FD 74 m FM 47 60S1 FD 93 m FM 40 60S1FD 105 m 132 m 170 m 200 m FMH 47 60S1 FMH 40 60S1 FMH 35 60S1 FMH 30 60S1 FMH 22 60S1 FMH 20 60S1 FMH 15 60S1 FMH 13 60S1 FM 30 60S1 FM 22 60S1 FM 20 60S1 FM 15 60S1 FM 13 60S1 FM 10 60S1 FM 08 60S1 FM 07 60S1 FM 40 60S1 FM 35 60S1 FM 30 60S1 FM 22 60S1 FM 20 60S1 FM 15 60S1 FM 13 60S1 FM 10 60S1 FM 08 60S1 FM 07 60S1 FM 30 60S1* FM 22 60S1* FM 20 60S1* FM 13 60S1* FM 10 60S1* FM 08 60S1* FM 07 60S1* FMH 47 60S1 FD FMH 40 60S1FD.0 FM 35 60S1 FD FMH 35 60S1 FD FM 35 60S1 FD.0 FM 30 60S1 FD FMH 30 60S1 FD FM 30 60S1 FD FM 30 60S1 FD FM 30 60S1 FD*.0 FM 22 60S1 FD FMH 22 60S1 FD FM 22 60S1 FD FM 22 60S1 FD FM 22 60S1 FD*.0 FM 20 60S1 FD FMH 20 60S1 FD FM 20 60S1 FD FM 20 60S1 FD FM 20 60S1 FD* *) nder development 21

22 SiC Schottky arrier Diodes 10 TO TO-220F (insulated) TO T-ack S min min min min I F 6 8 Single Dual Single Dual Single Dual Single Dual FDC 06S 65 FDC 06S 65 FDC 08S 65 FDC 08S FDC 10S 65 FDC 20C 65 FDC 10S 65 FDC 20C 65 FDCY 10S 65 FDCY 20C 65 FDCC 10S 65 FDCC 20C 65 FDC 25S 65 FDC 25S 65 FDCY 25S 65 FDCC 25S 65 FDCY 50C FDC 18S 120 FDCY FDCY 36C

23 Single IGT-s Dual IGT-s ackage Type name I peak iso,max f max ackage Type name I peak iso,max f max 10.0 max 43.0 max 26.5 max L R 4 2.5k 40kHz L R 17.0 max 8 2.5k 20kHz Single power supply needed with = +20 DC max ith uilt-in ower Supply & Short circuit protection max 44.0 max 26 max 15.5 max 63.0 max 39.0 max ith uilt-in ower Supply & Short circuit protection 1700 ith uilt-in ower Supply & Short circuit protection ith uilt-in ower Supply & Short circuit protection 1700 L R 5 2.5k 20kHz L R 5 4.0k 20kHz L R 5 2.5k 20kHz L 551K-01R 5 4.0k 20kHz ith uilt-in ower Supply & Short circuit protection L R L R L R k 4.0k 4.0k 20kHz 5kHz 5kHz 17.0 max 83.0 max 33.0 max 1 30 ith uilt-in ower Supply & Short circuit protection 1700 L R L R L 500K-01R k 2.5k 4.0k 20kHz 60kHz 20kHz 4 channel DC/DC converter for gate power supply ackage iso,max Type name pplications 17.0 max 88.0 max 17.5 max 86.0 max Inverter up to 30k 42.5 max 1 30 ith uilt-in ower Supply & Short circuit protection 1700 L R k 10kHz 40.0 max 1 30 L QR 2.5k Gate power supply for 3-Level IGTs For further plug & play IGT-drivers please refer to the following suppliers: : : 23