Symbol Rating Unit V V V V A A A W Vcc Vcc AC *9
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1 6MBP5RTB6 IPMR3 series 6 / 5A 6 in onepackage Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts in builtin control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25 unless otherwise specified) Item bus voltage bus voltage (surge) bus voltage (short operating) CollectorEmitter voltage IN Collector current 1ms Duty=76.1% Collector power dissipation One transistor Junction temperature Input voltage of power supply for PreDriver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (CaseTerminal) Screw torque Mounting (M5) Terminal (M5) Symbol Rating Unit (surge) SC CES *1 IC ICP IC *2 PC *3 Tj CC *4 in *5 Iin ALM *6 IALM *7 Tstg Top iso *8 Min Max cc+.5 3 cc AC *9 3.5 *9 A A A W ma ma k N m N m Fig.1 Measurement of case temperature *1 : ces shall be applied to the input voltage between terminal P and U or or W, N and U or or W. *2 : 125/FWD Rth(jc)/( x F MAX)=125/1.263/(5 x 2.6)x1=76.1% *3 : Pc=125/IGBT Rth(jc)=125/.87=144W [Inverter] *4 : cc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 1. *5 : in shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 1. *6 : ALM shall be spplied to the voltage between terminal No. 16 and 1. *7 : IALM shall be applied to the input current to terminal No. 16. *8 : 5Hz/6Hz sine wave 1 minute. *9 : Recommendable alue : 2.5 to 3. N m
2 6MBP5RTB6 IGBTIPM Electrical characteristics (at Tc=Tj=25, cc=15 unless otherwise specified.) Main circuit Item Symbol Condition Min. Typ. Max. Unit IN Turnon time Turnoff time Collector current at off signal input CollectorEmitter saturation voltage Forward voltage of FWD Reverse recovery time Maximum Avalanche Energy (A nonrepetition) Control circuit Item Symbol Condition Min. Typ. Max. Unit Supply current of Pline side predriver(one unit) Supply current of Nline side predriver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Limiting resistor for alarm cp ICCN in(th) Z talm RALM Switching Trequency : to 15kHz Tc=2 to 125 Fig.7 ON OFF Rin=2k ohm Tc=2 Fig.2 Tc=25 Fig.2 Tc=125 Fig ma ma ms ms ms ohm Protection Section ( cc=15) Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under oltage Protection Level Under oltage Protection Hysteresis ICES CE(sat) F ton toff trr PA IOC tdoc tsc TjOH TjH TCOH TCH U H CE=6 in terminal open. =5A =5A Chip =3,Tj=125 IC=5A Fig.1, Fig.6 Terminal Chip Terminal =3, IC=5A Fig.1, Fig.6 Internal wiring inductance=5nh Main circuit wiring inductace=54nh Tj=125 Tj=125 Tj=125 Fig.4 surface of IGBT chips =, =A, Case temperature 1. ma µs mj Item Symbol Condition Min. Typ. Max. Unit A µs µs Thermal characteristics( Tc=25) Item Symbol Min. Typ. Max. Unit Junction to Case thermal resistance IN IGBT Rth(jc).87 /W FWD Rth(jc) /W Case to fin thermal resistance with compound Rth(cf).5 /W Noise Immunity ( =3, cc=15, Test Circuit Fig.5) Item Condition Min. Typ. Max. Unit Common mode rectangular noise Pulse width 1µs, polarity ±,1minuets Judge : no overcurrent, no miss operating ±2. k Common mode lightning surge Rise time 1.2µs, Fall time 5µs Interval 2s, 1 times ±5. k Judge : no overcurrent, no miss operating Recommendable value Item Symbol Min. Typ. Max. Unit Bus oltage Operating Supply oltage of PreDriver Screw torque (M5) CC Nm Weight Item Symbol Min. Typ. Max. Unit Weight Wt 45 g *9 : (For 1 device, Case is under the device)
3 6MBP5RTB6 IGBTIPM in in(th) on in(th) trr 9% 5% 9% 1% ton toff Figure 1. Switching Time Waveform Definitions /in ge (Inside IPM) on Gate on off Gate off on off Fault (Inside IPM) normal /ALM alarm talm>max. talm>max. talm Fault : Overcurrent, Overheat or Undervoltage Figure 2. Input / Output Timing Diagram 2ms(typ.) tsc IALM IALM IALM Figure. 4 Definition of tsc cc P 15 Sw1 ccu 2k inu GNDU P U CT + AC2 15 2k IPM L + 3 in HCPL 454 GND N Figure 6. Switching Characteristics Test Circuit cc 15 2k inx W Sw2 GND N Earth Cooling Fin Figure 5. Noise Test Circuit 47p Noise 15 c cc P I PM U in P.G W +8 fsw GND N Figure 7. c Test Circuit
4 6MBP5RTB6 IGBTIPM Block diagram ccu 3 P inu 2 PreDriver GNDU 1 cc 6 U in 5 GND 4 ccw 9 PreDriver inw 8 GNDW 7 cc 11 PreDriver W inx 13 PreDriver GND 1 iny 14 PreDriver inz 15 PreDriver NC B 12 NC N Predriver include following functions 1 Amplifier for drive ALM 16 RALM 1.5kΩ Over heating protection circuit 2 Short circuit protection 3 Under voltage lockout circuit 4 Over current protection 5 IGBT chip over heating protection Outline drawings, mm Mass : 45g
5 6MBP5RTB6 IGBTIPM Characteristics Control circuit characteristics (Respresentative) Power supply current vs. Switching frequency Nside Tc=125 Pside Input signal threshold voltage vs. Power supply voltage Tj=25 Tj=125 Power supply current c (ma) Input signal threshold voltage in ( ON), in ( OFF), () Switching frequency fsw (khz) Power supply voltage cc () Under voltage vs. Junction temperature Under voltage hysterisis vs. Junction temperature Under voltage UT () Undervoltage hysterisis H () Junction temperature Tj () Junction temperature Tj () Alarm hold time vs. Power supply voltage Overheating characteristics TCOH,TjOH,TCH,TjH vs. CC 3. 2 Alarm hold time t ALM (msec.) Overheating protection T COH,T joh () OH hysterisis T CH,T jh () Power supply voltage cc () Power supply voltage cc ()
6 6MBP5RTB6 IGBTIPM Main circuit characteristics (Respresentative) 8 7 Collector current vs. CollectorEmitter voltage Tj=25(Chip) Collector current vs. CollectorEmitter voltage Tj=25(Terminal) CollectorEmitter voltage CE () CollectorEmitter voltage CE () 8 Collector current vs. CollectorEmitter voltage Tj=125(Chip) 8 Collector current vs. CollectorEmitter voltage Tj=125(Terminal) CollectorEmitter voltage CE () CollectorEmitter voltage CE () 1 Forward current vs. Forward voltage (Chip) 1 Forward current vs. Forward voltage (Terminal) 8 8 Forward current I F (A) Forward current I F (A) Foeward voltage F () Foeward voltage F ()
7 6MBP5RTB6 IGBTIPM 6 Switching Loss vs. Collector current Edc=3, cc=15, Tj=25 14 Switching Loss vs. Collector current Edc=3, cc=15, Tj=125 Switching loss Eon,Eoff, Err (mj/cycle) Switching loss Eon,Eoff, Err (mj/cycle) Collector current IC (A) Collector current IC (A) 15 Reverse biased safe operating area cc=15, Tj < = 125 Transient thermal resistance 1 5 Thermal resistance Rth(jc) (/W) CollectorEmitter voltage CE () Pulse width Pw (sec.) 15 Power derating for IGBT (per device) 15 Power derating for FWD (per device) Collector power dissipation Pc (W) 1 5 Collector power dissipation Pc (W) Case temperature Tc () Case temperature Tc ()
8 6MBP5RTB6 IGBTIPM 1 Switching time vs. Collector current Edc=3, cc=15, Tj=25 1 Switching time vs. Collector current Edc=3, cc=15, Tj=125 Switching time ton,toff,tf (nsec.) 1 1 Switching time ton,toff,tf (nsec.) Reverse recovery characteristics trr, Irr, vs. IF Reverse recovery current Irr (A) Reverse recovery time trr (nsec.) Foeward current IF (A)
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PM8HSA6 A K J L M LABEL V (2 REQD) C E R E B W 5 FO 4 VC CI 2 SR 1 V1 U φ (4 HOLES) G S φ (2 PLS) TYP Q 12 4 5 F D T SQ PIN (5 PLS) P H C Description: Mitsubishi Intelligent Power Modules are isolated
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FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is adopted.
More information2MBI150HJ Power Module (V series) 1200V / 150A / 2-in-1 package G1 E1 C2E1. IGBT Modules
Power Module (V series) 1V / 15A / 2-in-1 package Features High speed switching Voltage drive Low Inductance module structure Applications Soft-switching Application Industrial machines,such as Welding
More informationPM150RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLB060.
FLT-BSE TYPE INSULTED PCKGE FETURE a) dopting new 5th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)= @Tj=25 b) I adopt the over-temperature
More informationFeatures TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
More informationItem Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LVHG121_Preliminary LVHG121Z*_Preliminary Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes
More informationChapter 1. Product Outline
Chapter 1 Product Outline Contents Page 1. Introduction... 1-2 2. Product line-up... 1-4 3. Definition of Type Name and Marking Spec... 1-5 4. Package outline dimensions... 1-6 5. bsolute Maximum Ratings...
More informationTENTATIVE PP225D120. POW-R-PAK TM 225A / 1200V Half Bridge IGBT Assembly. Description:
Description: The Powerex is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other
More informationAPPLICATION AC100V~200V three-phase inverter drive for small power motor control (1.96) 17.7 (3.5) 35.9 ±0.5 (5.5)
MITSUBISHI SEMICONDUCTOR TYPE TYPE INTEGRATED POWER FCTIONS 600/30A low-loss CSTBT TM inverter bridge with N-side three-phase output DC-to-AC power
More informationV CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875
APTGL875U12DAG Single switch with Series diode Trench + Field Stop IGBT4 CES = 12 I C = 875A @ Tc = 8 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4
More informationMPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS
General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationPM25RL1B120 FLAT-BASE TYPE INSULATED PACKAGE
PMRLB PMRLB FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM
More informationIAP200T120 SixPac 200A / 1200V 3-Phase Bridge IGBT Inverter
Configurable Power FEATURES INCLUDE Multi-Function Power Assembly Compact Size 9 H X 17.60 W X 11.00 D DC Bus Voltages to 850VDC Snubber-less operation to 650VDC Switching frequencies to over 20kHz Protective
More informationPM200CVA060 PM200CVA060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM200CVA060
MITSUBISHI PMC6 PMC6 TYPE PMC6 FETURE φ, 6 Current-sense IGBT for khz switching Monolithic gate drive & protection logic Detection, protection & status indication circuits
More informationFeatures. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150
General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
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General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationTrench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package
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MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STGYA120M65DF2AG G120M65DF2AG Max247 long leads Tube
Automotivegrade trench gate fieldstop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet production data Features AECQ101 qualified 6 µs of shortcircuit withstand time VCE(sat)
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MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
More informationTechnical. Application. Assembly. Availability. Pricing. Phone
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Chapter 2 of Terminal s and Terminology Contents Page 1. of Terminal s... 22 2. of Terminology... 23 21 1. of Terminal s Preliminary Chapter 2 of Terminal s and Terminology Table 21 and 22 show the description
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MGQYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
More informationL M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MG3QYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module 3 Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
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More informationU P V VPI VFO WFO UP UFO V VPC GND GND
N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 11. WP 12. VWPI 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.
More informationU P V VPI VFO R (2 TYP.) WFO UP UFO V VPC GND GND
N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 11. WP 12. VWPI 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.
More informationIGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module
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More informationCP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts
Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.
More informationAPPLICATION AC100V~200V three-phase inverter drive for small power motor control (1.96) 17.7 (12.78) (3.5) 35.9 ±0.5 (5.5) (13.5)
MITSUBISHI SEMICONDUCTOR TEGRATED POWER FUNCTIONS TYPE TYPE 600/30A low-loss CSTBT TM inverter bridge with N-side three-phase output DC-to-AC power
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GT5J25 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5J25 High Power Switching Applications Fast Switching Applications Unit: mm The th generation Enhancement-mode Fast switching (FS):
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Ordering number : EN*101 STK70-0-E Thick-Film Hybrid IC Single-phase Rectification PFC Hybrid IC Overview The STK70-0-E is an average current control type hybrid IC that integrates in a single package
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