6MBP150RA060. IGBT-IPM R series. 600V / 150A 6 in one-package. Features. Maximum ratings and characteristics
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- Deborah Bridges
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1 6MBP15RA6 IGBTIPM R series 6 / 15A 6 in onepackage Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts in builtin control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25 unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) CollectorEmitter voltage IN Collector current DC 1ms Duty=58.8% Collector power dissipation One transistor Junction temperature Input voltage of power supply for PreDriver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (CaseTerminal) Screw torque Mounting (M5) Terminal (M5) Symbol Rating Unit Min. Max. DC 45 DC(surge) 5 SC 2 4 CES 6 IC 15 A ICP 3 A IC 15 A PC 595 W Tj 15 CC *1 2 in *2 z Iin 1 ma ALM *3 cc IALM *4 15 ma Tstg Top 2 1 iso *5 AC2.5 k 3.5 *6 N m 3.5 *6 N m Fig.1 Measurement of case temperature *1 Apply cc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 1. *2 Apply in between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 1. *3 Apply ALM between terminal No. 16 and 1. *4 Apply IALM to terminal No. 16. *5 5Hz/6Hz sine wave 1 minute. *6 Recommendable alue : 2.5 to 3. N m Electrical characteristics of power circuit (at Tc=Tj=25, cc=15) Item Symbol Condition Min. Typ. Max. Unit IN Collector current at off signal input ICES CE=6 input terminal open 1. ma CollectorEmitter saturation voltage CE(sat) Ic=15A 2.8 Forward voltage of FWD F Ic=15A 3.
2 6MBP15RA6 IGBTIPM Electrical characteristics of control circuit(at Tc=Tj=25, cc=15) Item Symbol Condition Min. Typ. Max. Unit Power supply current of Pline side Predriver(one unit) Power supply current of Nline side three Predriver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Iccp ICCN in(th) Z TCOH TCH TjOH TjH fsw= to 15kHz Tc=2 to 1 *7 fsw= to 15kHz Tc=2 to 1 *7 ON OFF Rin=2k ohm DC=, Ic=A, Case temperature, Fig.1 surface of IGBT chips ma ma Collector current protection level IN IOC Tj= A Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm tdoc U H talm tsc RALM Tj=25 Fig.2 Tj=25 Fig µs ms µs ohm *7 Switching frequency of IPM Dynamic characteristics(at Tc=Tj=125, cc=15) Item Symbol Condition Min. Typ. Max. Unit Switching time (IGBT) ton IC=15A, DC=3.3 µs toff 3.6 µs Switching time (FWD) trr IF=15A, DC=3.4 µs Definition of tsc Thermal characteristics( Tc=25) Item Symbol Typ. Max. Unit Junction to Case thermal resistance IN IGBT Rth(jc).21 /W FWD Rth(jc).47 /W Case to fin thermal resistance with compound Rth(cf).5 /W Recommendable value Item Symbol Min. Typ. Max. Unit DC bus voltage DC 2 4 Operating power supply voltage range of Predriver CC Switching frequency of IPM fsw 1 2 khz Screw torque Mounting (M5) N m Terminal (M5) N m
3 6MBP15RA6 IGBTIPM Block diagram Predrivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 44g
4 6MBP15RA6 IGBTIPM Characteristics (Representative) Control circuit 4 Power supply current vs. Switching frequency Input signal threshold voltage Nside Tj=25 vs. Power supply voltage Tj=1 Pside Tj= Power supply current Icc (ma) Input signal threshold voltage in (ON), in (OFF), () Switching frequency fsw (khz) Power supply voltage cc () 14 Undervoltage vs. Junction temperature 1. Undervoltage hysterisis vs. Junction temperature Undervoltage UT () Undervoltage hysterisis H () Junction temperature Tj () Junction temperature Tj () 3. Alarm hold time vs. Power supply voltage 2 Overheating characteristics TCOH,TjOH,TCH,TjH vs. CC Alarm hold time talm (msec.) Overheating protection TCOH,TjOH () OH hysterisis TCH,TjH () Power supply voltage cc () Power supply voltage cc ()
5 6MBP15RA6 IGBTIPM Inverter 3 Collector current vs. CollectorEmitter voltage Tj=25 3 Collector current vs. CollectorEmitter voltage Tj= CollectorEmitter voltage CE () CollectorEmitter voltage CE () Switching time vs. Collector current Edc=3, cc=15, Tj=25 Switching time vs. Collector current Edc=3, cc=15, Tj=125 Switching time ton, toff (nsec.) 1 Switching time ton, toff (nsec.) Collector current IC (A) Collector current IC (A) 3 Forward current vs. Forward voltage Reverse recovery characteristics trr, Irr, vs. IF Forward current IF (A) Reverse recovery current Irr (A) Reverse recovery time trr (nsec.) Foeward voltage F () Foeward current IF (A)
6 6MBP15RA6 IGBTIPM Inverter Transient thermal resistance 15 Reverse biased safe operating area cc=15, Tj < = 125 Thermal resistance Rth(jc) (/W) Pulse width Pw (sec.) CollectorEmitter voltage CE () 7 Power derating for IGBT (per device) 3 Power derating for FWD (per device) Collector power dissipation Pc (W) Collector power dissipation Pc (W) Case temperature Tc () Case temperature Tc () 3 Switching loss vs. Collector current Edc=3, cc=15, Tj=25 3 Switching loss vs. Collector current Edc=3, cc=15, Tj=125 Switching loss Eon,Eoff,Err (mj/cycle) Switching loss Eon,Eoff,Err (mj/cycle)
7 6MBP15RA6 IGBTIPM Overcurrent protection vs. Junction temperature cc=15 42 Overcurrent protection level Ioc (A) Junction temperature Tj ()
Symbol Rating Unit V V V V A A A W Vcc Vcc AC *9
6MBP5RTB6 IPMR3 series 6 / 5A 6 in onepackage Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and
6MBP100VFN IGBT Module (V series) 600V / 100A / IPM. IGBT Modules
MBPFN5 IGBT Module ( series) / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability
6MBP75VFN IGBT Module (V series) 600V / 75A / IPM. IGBT Modules
MBP75FN5 IGBT Module ( series) / 75A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high
7MBP50VFN IGBT Module (V series) 600V / 50A / IPM. IGBT Modules
7MBP5VFN65 IGBT Module (V series) 6V / 5A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and
7MBP50VFN IGBT Module (V series) 1200V / 50A / IPM. IGBT Modules
7MBP5VFN5 IGBT Module (V series) V / 5A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and
Description of Terminal Symbols and Terminology
Quality is our message Chapter 2 Description of Terminal Symbols and Terminology Contents Page 1. Description of Terminal Symbols...2-2 2. Description of Terminology...2-3 2 1 1 Description of Terminal
6MBP50VDA IGBT MODULE (V series) 1200V / 50A / IPM. Features
IGBT MODULE (V series) V / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability
7MBP75VDN IGBT MODULE (V series) 1200V / 75A / IPM. Features
IGBT MODULE (V series) V / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability
6MBP20VAA IGBT MODULE (V series) 600V / 20A / IPM. Features
6MBPVAA6-5 IGBT MODULE (V series) 6V / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing
Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.
600 / 50 Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSO, SCSO etc.) Comprehensive line-up pplications
Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current
7MBRS6 IGBT Modules IGBT MODULE (S series) 6 / / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C IC. Tc=80 C.
7MBRU12 IGBT Modules IGBT MODULE (U series) 12 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.
7MBR2S12 IGBT Modules IGBT MODULE (S series) 12 / 2 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30.
7MBRS14 IGBT Modules IGBT MODULE (S series) 14 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and
Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current
7MBR3S6 IGBT Modules IGBT MODULE (S series) 6 / 3 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse.
7MBR5U12 IGBT Modules IGBT MODULE (U series) 12 / 5 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive
Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.
7MBR5SB12 IGBT Modules IGBT MODULE (S series) 12 / 5 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C
7MBRSC IGBT Modules PIM/Built-in converter with thyristor and brake (S series) / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device
7MBR3SC6 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 6 / 3 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications
Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100
7MBRVP65 IGBT MODULE (V series) 6V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Ic Continuous Tc=80 C 35 Icp 1ms Tc=80 C 70 -Ic 35 -Ic pulse 1ms 70 Collector power dissipation Pc 1 device 210 W
7MBR35VP15 IGBT MODULE (V series) 1V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 450
IGBT MODULE (V series) V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Icp 1ms TC=80 C 60 -Ic 30. IC Continuous TC=80 C 30 ICP 1ms TC=80 C 60. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR3VKA65 IGBT MODULE (V series) 6V / 3A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50
IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
Icp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20
7MBRVKC IGBT MODULE (V series) V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
7MBR35VKB125 IGBT MODULE (V series) 12V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter
Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
IGBT MODULE (V series) V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
High Power Rugged Type IGBT Module
ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These
4MBI400VF-120R-50. IGBT Power Module (V series) 1200V/400A/IGBT, ±600V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. (Unit : mm)
4MBI4F12R5 IGBT Power Module ( series) 12/4A/IGBT, ±6/45A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit Low inductance module structure Applications Inverter for motor
Viso AC : 1min VAC
MBIVA5 IGBT MODULE (V series) V / A / in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI75VA-12-5 IGBT MODULE (V series) 12V / 75A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Tc=100 C 300 Tc=25 C 360 Collector current
2MBI3VH-12-5 IGBT MODULE (V series) 12V / 3A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous
1MBI2U4H-12L-5 IGBT MODULE (U series) 12V / 2A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive
Icp 1ms TC=80 C 100 -IC 50. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VB1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
CM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack
CMDY-A CMDY-A IC...A CES... Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9 8 CE E C E G GE 8 () -φ6. MOUNTING
XI'AN IR-PERI Company
FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off
C Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI6VD-6-5 IGBT MODULE (V series) 6V / 6A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
Icp 1ms TC=80 C 200 -IC 100. IC Continuous TC=80 C 50 ICP 1ms TC=80 C 100. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR1VB65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
SUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features.
SEPT. 9 LUH75G121_Preliminary LUH75G121Z*_Preliminary SUSPM TM 1V 75A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast
Icp 1ms TC=80 C 50 -IC 25. IC Continuous TC=80 C 25 ICP 1ms TC=80 C 50. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VA5 IGBT MODULE (V series) V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Tc=25 C 1800 Tc=100 C 1400 Collector current
2MBI4VXB-2P-5 IGBT MODULE (V series) 2V / 4A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor
Chapter 2. Technical Terms and Characteristics
Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms
Tc=25 C 1800 Tc=100 C 1400 Collector current
2MBI14VXB-17E-5 IGBT MODULE (V series) 17V / 14A / 2 in one package Inverter Inverter Thermistor 1 Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms TC=100 C 7200
1MBI36VD-12P IGBT MODULE (V series) 36V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100
6MBIVB125 IGBT MODULE (V series) 12V / A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LUHG121_Preliminary LUHG121Z*_Preliminary SEPT. 29 SUSPM TM 12V A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching
MG200Q2YS60A(1200V/200A 2in1)
TOSHIBA IGBT Module Silicon N Channel IGBT (V/A in) High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms 2400
1MBI12VC-12P IGBT MODULE (V series) 12V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VR-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Continuous. Ic pulse 1ms 900. C Case temperature TC 125 Storage temperature Tstg -40 to N m Terminals (*4) - 4.5
6MBI45V25 IGBT MODULE (V series) 2V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) RoHS Compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier
IGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package
MBIVN--5 IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A
MGQYSA TOSHIBA IGBT Module Silicon N Channel IGBT MGQYSA High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in
IGBT MODULE (V series) 1200V / 75A / IGBT, RB-IGBT 12 in one package
MBIVN-- IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V
IGBT MODULE (V series) V / 9A / 1 in one package Features High speed switching Voltage drive Low Inductance module sucture Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
Chapter 1. Product Outline
Chapter 1 Product Outline Contents Page 1. Introduction... 1-2 2. Product line-up... 1-4 3. Definition of Type Name and Marking Spec... 1-5 4. Package outline dimensions... 1-6 5. bsolute Maximum Ratings...
2MBI150HJ Power Module (V series) 1200V / 150A / 2-in-1 package G1 E1 C2E1. IGBT Modules
Power Module (V series) 1V / 15A / 2-in-1 package Features High speed switching Voltage drive Low Inductance module structure Applications Soft-switching Application Industrial machines,such as Welding
PS21661-RZ/FR PS21661-FR. APPLICATION AC100V~200V, three-phase inverter drive for small power motor control.
MITSUBISHI SEMICONDUCTOR TYPE TYPE PS21661-RZ PS21661-FR INTEGRATED POWER FUNCTIONS 600/3A low-loss 5th generation IGBT inverter bridge for 3 phase
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VC-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15
![4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15](/thumbs/95/123010548.jpg "4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15")
IGBT Power Module ( series) 12/45A/IGBT, ±/45A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module structure Applications
Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LVHG121_Preliminary LVHG121Z*_Preliminary Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes
PM75CL1A120 FLAT-BASE TYPE INSULATED PACKAGE
PMCL1A1 PMCL1A1 FEATURE verter + Drive & Protection IC a) Adopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is
Features: Phase A Phase B Phase C -DC_A -DC_B -DC_C
Three Phase Inverter Power Stage Description: The SixPac TM from Applied Power Systems is a configurable IGBT based power stage that is configured as a three-phase bridge inverter for motor control, power
4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15
![4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15](/thumbs/76/73103351.jpg "4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15")
4MBI9B12R15 IGBT Power Module ( series) 12/9A/IGBT, ±9/9A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module structure
Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd
2V 2A IGBT Module RoHS Features Ultra low loss High ruggedness High short circuit capability Positive temperature coefficient With fast free-wheeling diodes Agency Approvals Applications Inverter Converter
4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8.
![4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8.](/thumbs/72/67833924.jpg "4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8.")
4MBI65B12R15 IGBT Power Module ( series) 12/65A/IGBT, ±9/65A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module
IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package
MBI3VG-R-5 IGBT MODULE (V series) V / 3A / IGBT, V/3A/RB-IGBT, in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module sucture Featuring Reverse Blocking IGBT
6MBP75VDA IGBT MODULE (V series) 600V / 75A / IPM. Features
MBPVDA-5 IGBT MODULE (V series) V / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high
Applied between V UFB -V UFS, V VFB -V VFS,V WFB -V WFS. Applied between U P,V P,W P -V PC, U N,V N,W N -V NC
Maximum Ratings (Tj=25 C, unless otherwise noted) : Inverter Part: Item Symbol Condition Rating Unit Supply voltage CC Applied between P-NU,N,NW 450 Supply voltage (surge) CC(surge) Applied between P-NU,N,NW
PM50CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>
FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=1 C b) I adopt the over-temperature conservation by Tj
PM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>
FETURE a) dopting new 5th generation (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=125 b) I adopt the over-temperature conservation by Tj detection
PM200CVA060 PM200CVA060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM200CVA060
MITSUBISHI PMC6 PMC6 TYPE PMC6 FETURE φ, 6 Current-sense IGBT for khz switching Monolithic gate drive & protection logic Detection, protection & status indication circuits
PM100RL1B060 FLAT-BASE TYPE INSULATED PACKAGE
FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is adopted.
VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W
FGW5NVD (High-Speed V series) V / 5A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive
APPLICATION AC100V~200V three-phase inverter drive for small power motor control (1.96) 17.7 (3.5) 35.9 ±0.5 (5.5)
MITSUBISHI SEMICONDUCTOR TYPE TYPE INTEGRATED POWER FCTIONS 600/30A low-loss CSTBT TM inverter bridge with N-side three-phase output DC-to-AC power
PM150RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLB060.
FLT-BSE TYPE INSULTED PCKGE FETURE a) dopting new 5th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)= @Tj=25 b) I adopt the over-temperature
LDIP- IPM IM (Preliminary)
LDIP- IPM (Preliminary) Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: Home appliances
MITSUBISHI INTELLIGENT POWER MODULES PM800HSA060 FLAT-BASE TYPE INSULATED PACKAGE
PM8HSA6 A K J L M LABEL V (2 REQD) C E R E B W 5 FO 4 VC CI 2 SR 1 V1 U φ (4 HOLES) G S φ (2 PLS) TYP Q 12 4 5 F D T SQ PIN (5 PLS) P H C Description: Mitsubishi Intelligent Power Modules are isolated
6MBP35VBA IGBT MODULE (V series) 1200V / 35A / IPM. Features
MBP35VBA-5 IGBT MODULE (V series) V / 35A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing
7MBP150VDA IGBT MODULE (V series) 600V / 150A / IPM. Features
7MBP5VDA6-5 IGBT MODULE (V series) 6V / 5A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance
MBN3600E17F Silicon N-channel IGBT 1700V F version
Silicon N-channel IGBT 17V F version Spec.No.IGBT-SP-124 R P1 FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. Low driving power: Low input
CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts
Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.
TENTATIVE PP225D120. POW-R-PAK TM 225A / 1200V Half Bridge IGBT Assembly. Description:
Description: The Powerex is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other
Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
MBN1500FH45F Silicon N-channel IGBT 4500V F version
Silicon N-channel IGBT 4500V F version Spec.No.IGBT-SP-15014 R7 P1 FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity
PM50CSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
PM25RL1B120 FLAT-BASE TYPE INSULATED PACKAGE
PMRLB PMRLB FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM
QM300HA-2H HIGH POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 1 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor controllers,
IAP200T120 SixPac 200A / 1200V 3-Phase Bridge IGBT Inverter
Configurable Power FEATURES INCLUDE Multi-Function Power Assembly Compact Size 9 H X 17.60 W X 11.00 D DC Bus Voltages to 850VDC Snubber-less operation to 650VDC Switching frequencies to over 20kHz Protective
Applications Power rectification for air conditioners and general-purpose inverters as a single-phase rectification active converter.
Ordering number : EN*101 STK70-0-E Thick-Film Hybrid IC Single-phase Rectification PFC Hybrid IC Overview The STK70-0-E is an average current control type hybrid IC that integrates in a single package
PM150RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
PS21867-P. Intellimod Module Dual-In-Line Intelligent Power Module 30 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual-In-Line Intelligent Power Module J A N M C BB P B AA 27 28 30 31 33 35 21 1 2 3 4 29 5 6 7 8 32 9 1 12 13 34
QM150HY-H HIGH POWER SWITCHING USE
QM1HY-H QM1HY-H IC Collector current... 1 CEX Collector-emitter voltage... 6 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor
N P HEATSINK SIDE 25 UN 26 VUFB 27 UP 30 NC 31 NC 32 NC 33 NC 34 NC 35 NC 28 U(VUFS) 29 NC
Single-In-Line Intelligent Power Module A D G H J K L M N P C W X E 35 34 33 32 31 30 Y V (2 PLACES) F PS21661-RZ AA AK AJ Z B 1 3 2 5 4 7 6 9 8 11 3 12 15 14 17 16 19 18 21 25 26 27 28 20 22 23 24 29
MBN1200F33F-C 3300V Silicon N-channel IGBT F version with SiC Diode
MBNF33F-C 33V Silicon N-channel IGBT F version with SiC Diode Spec.No.IGBT-SP-5 R P FEATURES Soft switching & low conduction loss IGBT : Soft low-injection punch-through High conductivity IGBT with advanced
QM50HA-H MEDIUM POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 6 hfe DC current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, UPS, DC
MBL1200E17F Silicon N-channel IGBT 1700V F version
Silicon N-channel IGBT 1700V F version Spec.No.IGBT-SP-15018 R2 P1 1.FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. Low driving power: Low
QM200HA-2H HIGH POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 1 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION C motor controllers, UPS, CCF, motor
Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150
General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
MPMC100B120RH NPT & Rugged Type 1200V IGBT Module
General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MGQYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit