Discrete IGBT datasheet understanding. Zhou Wei( 周伟 ) System application engineer Infineon Technologies China
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1 Discrete IGBT datasheet understanding Zhou Wei( 周伟 ) System application engineer Infineon Technologies China wei.zhou@infineon.com
2 Discrete IGBT datasheet understanding Product Infineon Qualifications IGBT Chip Technology & Team Structure Product Datasheet Qualifications understanding & Team Structure Electrical characteristic Switching characteristic Thermal features Page 2
3 Behaviour: IGBT vs MOSFET I C I D I C V CE I D U DS pn threshold voltage V CEs V DS at current tail t The IGBT is characterized by it s pn threshold voltage. Conduction loss are in linear relation to I C The MOSFET behaves like a resistor. Conduction loss are proportional to I D ² The IGBT has a characteristic current tail. Turn off losses are dominated by the tail current. IGBT is basically the preferred device for higher currents at limited pulse frequencies. 2011/10/21 Page 3
4 Infineon s IGBT history for Drives Product Technologies Page 4
5 Vertical IGBT Concepts Punch Through Non Punch Through Trench + Field-Stop (ROW: 1988) (IFX: 1990 ROW: 1997) (IFX: 2000) Emitter Gate Emitter Gate Emitter Gate -E -E -E n - basis (epi) n + buffer (epi) p + emitter (substrate) n - basis (substrate) n - basis (substrate) Collector Collector Collector Advantage Implanted Back-Emitter better adjustable Performance Lower Schwitching Losses Higher Switching Robustness Advantage Implanted Back-Emitter Implanted Fieldstop enables thinner base region Performance Lower VCEsat Lower Switching Losses Robustness like NPT Page 5
6 Standard planar IGBT are still good, but they have Emitter Gate high conduction losses, due to high V CE(sat) n + p + n - (substrate) low switching performance, due to low switching speed poor thermal properties, due to thick wafers Collector p New Technologies Copyright are Infineon necessary Technologies to All meet rights reserved. tomorrows requirements Page 6
7 How to improve the standard IGBTtechnology? Emitter Gate n + p + Improvement of thin wafer technology (Fieldstop) reduces V CE(sat) dramatically Reduction of Conduction Losses for higher Efficiency and improved thermal properties Reduction of Swtiching Losses for higher Efficiency n - (substrate) Introduction of trench gate technology reduces V CE(sat) further Reduction of Conduction Losses for higher Efficiency n ( (fieldstop) ) Collector p + Well established thinwafer technology lowers VCE(sat) & Eoff furthermore Introduction of RC Diode technology Infineon s TrenchStop -Technology meets today tomorrow s requirements Page 7
8 Discrete IGBT datasheet understanding Product Infineon Qualifications IGBT Chip Technology & Team Structure Product Datasheet Qualifications understanding & Team Structure Electrical characteristic Switching characteristic Thermal features Page 8
9 Current parameters (IKW50N60T) Nominal current (Ic) Ic is calculated as below: Tc = T jmax C - Vcesat T jmax C * Ic * Rthjc IKW50N60T Tj=175 C Vcesat=2.4V Ic=50A Rthjc=0.45 C/W IKW50N60T Tc=121 C Tc> 100 C Tc set to 100 C All nominal current is specified at 100 /110,25 value is also given as reference. This value just represents IGBT DC behavior, can be a reference of choosing IGBT, but not yardstick. 2011/10/21 Page 9
10 Current Limitation (IKW50N60T) Calculation of Max. DC Current Tjc = Ptot Rthjc P tot = I C V CE V CE = V TO I C R CE I C = R thjc V 2 TO 2 thjc 4RCE Tj max R R CE -T c - VTO 2 R CE Page 10
11 Current Limitation IHW20N120R3 in TO-247 Value limited by bondwire IKW50N60T in TO-247 Page 11
12 Pulse collector current (IKW50N60T) Pulse current (Icpuls) Icpuls is defined as repetitive turn on & maximum turn off pulse current 3 ~ 4 times of Ic,according to different technology 2011/10/21 Page 12
13 V CES Breakdown Voltage (IKW50N60T) V CES VCES-test condition Max. collector-emitter voltage under condition of gate and emitter shorted, where leakage current is within spec. Vces under Tj=25, proportional to its junction temperature Vces can not be violated at any condition, otherwise IGBT would break down. Page 13
14 V CES Breakdown Voltage (IKW50N60T) IKW50N60T Max. VCES can be shunt donw Due to the stray inductance ΔV= L σ * di/dt In real application, turn-off voltage need to be smaller than max. VCES Page 14
15 Voltage parameters (IKW50N60T) Vcesat Vcesat is specified at nominal current Positive coefficient Good for paralleling 2011/10/21 Page 15
16 Voltage parameters (IKW50N60T) Vcesat increase with Ic increasing Vcesat increase with Vge decreasing Vge is not recommended to use too small: conduction losses 2011/10/21 Page 16
17 VGEth (IKW50N60T) Threshold of IGBT turn on: Pay attention to negative temperature coefficient of VGEth. 2011/10/21 Page 17
18 Max operation junction temperature (IKW50N60T) Tjmax is the max temperature for IGBT to sustain all electrical parameters within spec. Never exceed Tjmax at any condition! Otherwise, IGBT will run away fail! 2011/10/21 Page 18
19 Discrete IGBT datasheet understanding Product Infineon Qualifications IGBT Chip Technology & Team Structure Product Datasheet Qualifications understanding & Team Structure Electrical characteristic Switching characteristic Thermal features Page 19
20 Short circuit current (IKW25N120T2) Different value for various start junction condition. 2011/10/21 Page 20
21 Short circuit current & time (IKW25N120T2) 10us guaranteed at test condition. 2011/10/21 Page 21
22 Current parameters (IKW25N120T2) Short circuit condition: Vge: gate voltage (15V) Vcc: DC bus voltage Tvj: short circuit start temperature Vge Isc tsc 2011/10/21 Infineon test short circuit at maximum operation Tj Page 22
23 Switching parameters (IKW50N60T) Qgate This value is specified at +15V, used to calculate driving power Ciss, Crss, Coss C iss = C GE + C GC : Input capacitance (output shorted) C oss = C GC + C EC : Output capacitance (input shorted) C rss = C GC : Reverse transfer capacitance (Miller capacitance) C GC C P = Q g V GE f G C GE C EC E 2011/10/21 Page 23
24 Discrete IGBT datasheet understanding Product Infineon Qualifications IGBT Chip Technology & Team Structure Product Datasheet Qualifications understanding & Team Structure Electrical characteristic Switching characteristic Thermal features Page 24
25 Thermal Features IGBT-thermal model Rthjc Rthch Input Power Power Loss Chip Solder Copper Baseplate Thermal Grease Output Power Tj Tc Chip Case Tjc Case Heatsink Tch Heatsink Th Rthha Ta Heatsink Ambient Tha Rth(j-a) = Rth(j-c) + Rth(c-s) + Rth(s-a) Tj = Tjc + Tch + Tha + Ta Page 25
26 IGBT Thermal Resistance (IKW50N60T) R th JC ; R th CH Page 26
27 IGBT Power Dissipation & Junction Temp. (IKW50N60T) Ptot-total power dissipation Tjmax = Tc+Ptot*Rthjc (max) Ptot =(Tjmax- Tc)/Rthjc (max) Rated at 25 Page 27
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
Grade of climate describes the permissible ambient test conditions (climate) according to DIN IEC 68-1
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Obsolete Product(s) - Obsolete Product(s)
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Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd
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V DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
Base Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
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SMPS MOSFET. V DSS Rds(on) max I D
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V DSS R DS(on) max I D
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
Data Sheet Explanation
Data Sheet Explanation V1.2 2014-04 Edition 2014-01 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN
IGBTs (Insulated Gate Bipolar Transistor)
IGBTs (Insulated Gate Bipolar Transistor) Description This document describes the basic structures, ratings, and electrical characteristics of IGBTs. It also provides usage considerations for IGBTs. 1
Analog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics F2 Active power devices»mos»bjt» IGBT, TRIAC» Safe Operating Area» Thermal analysis 30/05/2012-1 ATLCE - F2-2011 DDC Lesson F2:
STGW60H65DFB STGWT60H65DFB
STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized tail
V DSS R DS(on) max (mω)
PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (
Packing Method. Symbol Parameter Test Conditions Min. Typ. Max. Unit V CE(sat) Saturation Voltage V C = 25 A, V GE = 15 V,
FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj
IGBT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode
IGBT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode IKQ1N6TA 6Vlowlossswitchingseriesthirdgeneration Datasheet IndustrialPowerControl
AUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
ABB HiPak. IGBT Module 5SNA 1200G VCE = 4500 V IC = 1200 A
VCE = 45 V IC = 2 A ABB HiPak IGBT Module 5SNA 2G453 Doc. No. 5SYA 4-5 3-26 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC Industry standard package High power deity
SMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
Data Sheet GHIS030A120S-A2
Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =1200V I C = 30A @T C = 100 0 C E A G C Features Field StopTrench Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50
TO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
ABB HiPak. IGBT Module 5SNA 2400E VCE = 1700 V IC = 2400 A
VCE = 7 V IC = 24 A ABB HiPak IGBT Module 5SNA 24E7 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power cycling
-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
Item Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current
IGBT MODULE Silicon N-channel IGBT 17V G version Spec.No.IGBT-SP-163 R P 1 FEATURES High current density package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable
V DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
SMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel
IGBT 600V, 4.5A, N-Channel Features Reverse Conducting II IGBT IGBT VCE(sat)=1.7V (typ) [IC=A, VGE=15V] IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=A] Diode trr=65ns (typ) 5 s Short Circuit Capability Applications
HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE
PD-97014C HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE G300HHCK12P2 Product Summary Part Number V CE I C V CE(SAT) G300HHCK12P2 1200V 300A 2.2 HiRel TM INT-A-Pak 2 The HiRel TM INT-A-Pak series
MTP IGBT Power Module Primary Dual Forward
MTP IGBT Power Module Primary Dual Forward VS5MTWDF MTP (Package example) PRIMARY CHARACTERISTICS IGBT, T J = 5 C V CES V V CE(on) at 25 C at 8 A 2. V I C at 8 C 9 A FRED Pt AP DIODE, T J = 5 C V RRM V
Absolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
V CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875
APTGL875U12DAG Single switch with Series diode Trench + Field Stop IGBT4 CES = 12 I C = 875A @ Tc = 8 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4
AUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
Features. Description. Table 1: Device summary. Order code VCE ICN Die size Packing STG40M120F3D V 40 A 6.06 x 6.86 mm² D7
1200 V, 40 A trench gate field-stop M series low-loss IGBT die in D7 packing Datasheet - production data Features 10 µs of short-circuit withstand time Low VCE(sat) = 1.85 V (typ.) @ IC = 40 A Positive
IRF1704 Benefits AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)