MCR69-2, MCR69-3. Thyristors. Surface Mount V > MCR69-2, MCR69-3. Description. Designed for overvoltage protection in crowbar circuits.
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1 1 2 3 Thyristors MCR69-2, MCR69-3 Pb Description Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability Pin Out High Capacitor Discharge Current, 750 Amps Pb Free Packages are Available 4 Functional Diagram CASE 221A STYLE 3 AYWW MCR69x AKA Additional Information Datasheet Resources Samples
2 Maximum Ratings (T J = 25 C unless otherwise noted) Rating Part Number Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) (T J = -40 to +125 C, Gate Open) MCR169-2 V DRM, V RRM 50 MCR V Peak Discharge Current (Note 2) I TM 750 A On-State RMS Current (180 Conduction Angles; T C = 85 C) I T (RMS) 25 A Average On-State Current (180 Conduction Angles; T C = 80 C) I T(AV) 16 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, T J = 125 C) I TSM 300 A Circuit Fusing Considerations (t = 8.3 ms) I 2 t 375 A 2 sec Forward Peak Gate Current (Pulse Width 1.0 µs, T C = 85 C) I GM 2.0 A Forward Average Gate Power (t = 8.3 ms, T C = 80 C) P GM 20 W Operating Junction Temperature Range T J -40 to +125 C Storage Temperature Range T stg -40 to +150 C Mounting Torque 8.0 in. lb. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limitsare exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. 3. Test Conditions: I G = 150 ma, V D = Rated V DRM, I TM = Rated Value, T J = 125 C. Thermal Characteristics Characterstic Symbol Value Unit Thermal Resistance, Junction-to-Case R ΘJC 1.5 Thermal Resistance, Junction-to-Ambient R ΘJA 60 C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T L 260 C
3 Electrical Characteristics - OFF (T J = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current (V AK = V DRM = V RRM ; Gate Open) T J = 25 C I DRM I RRM µa T J = 125 C ma Electrical Characteristics - ON Characteristic Symbol Min Typ Max Unit Peak Forward On State Voltage (Note 4) (I TM = 50 A) (I TM = 750 A, tw = 1 ms) (Note 5) V TM V Gate Trigger Current (Continuous dc) (V D = 12 V, R L = 100 Ω) I GT ma Gate Trigger Voltage (Continuous dc) (V D = 12 Vdc, R L = 100 Ω) V GT V Gate Non-Trigger Voltage (Continuous dc) (V D = 12 Vdc, R L = 100 Ω, T J -125ºC) V GD V Holding Current (V D = 12 Vdc, Initiating Current = 200 ma, Gate Open) I H ma Latch Current (V D = 12 V DC, I G = 150 ma) I L 60 ma Gate Controlled Turn-On Time (Note 6) (V D = Rated V DRM, I G = 150 ma) (I TM = 50 A Peak) t gt 1.0 µs Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off-State Voltage (V D = Rated V DRM, Exponential Waveform, Gate Open, T J = 125 C) dv/dt 10 V/µs Critical Rate of Rise of On State Current I G = 150 ma, T J = 125 C di/dt 100 A/µs 4. Pulse duration 300 µs, duty cycle 2%. 5. Ratings apply for tw = 1 ms. See Figure 1 for I TM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. 6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
4 Voltage Current Characteristic of SCR Symbol Parameter V DRM Peak Repetitive Forward Off State Voltage I DRM V RRM Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage I I I RRM V TM Peak Reverse Blocking Current Maximum On State Voltage I I H Holding Current Figure 1. Typical RMS Current Derating Figure 2. Peak Capacitor Discharge Current Derating Figure 3. Current Derating Figure 4. Maximum Power Dissipation
5 Figure 5. Thermal Response r(t), TRANSIENT THERMAL RESISTANCE( NORMALIZED) t, TIME (ms) Z JC(t) = R JC r(t) 1 k 2 k 3k k 5 10 k Figure 6.Gate Trigger Current Figure 7. Gate Trigger Voltage Figure 8. Holding Current
6 Dimensions Part Marking System SEATING PLANE B F T C S 4 H Q Z L V G N D A K U R J CASE 221A STYLE 3 A= Assembly Location Y= Year WW = Work Week MCR69= Device Code x= 2 or 3 AKA= Location Code AYWW MCR69x AKA Dim Inches Millimeters Min Max Min Max A B C D F G H J K L N Q R S T U V Z Pin Assignment 1 Cathode 2 Anode 3 Gate 4 Anode Ordering Information Device Package Shipping MCR69-2 TO-220AB MCR69-2G TO-220AB (Pb-Free) 500 / Box MCR69-3 TO-220AB MCR69-3G TO-220AB (Pb-Free) 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:
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Power Modules, Passivated Assembled Circuit Elements, 4 A FEATURES Glass passivated junctions for greater reliability Electrically isolated base plate PACE-PAK (D-9) PRIMARY CHARACTERISTICS I O 4 A Type
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MAC4DSM, MAC4DSN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
Phase Control Thyristor RMS SCRs, 25 A, 35 A
VS-N681, VS-N Series Phase Control Thyristor RMS SCRs, A, 3 A TO-8 (TO-8AA) V DRM /V RRM PRIMARY CHARACTERISTICS I T(AV) 16 A, A I T(RMS) A, 3 A 3 V, V, V, 6 V, 7 V, 8 V, V, V, 1 V, 1 V, V, V, 1 V 1 V
Power Modules, Passivated Assembled Circuit Elements, 25 A
Power Modules, Passivated Assembled Circuit Elements, 25 A VS-P Series FEATURES Glass passivated junctions for greater reliability Electrically isolated base plate PACE-PAK (D-9) PRIMARY CHARACTERISTICS
Description. Features & Benefits. RoHS compliant Glass passivated junctions. Applications. Additional Information. Datasheet
Sx01E & SxN1 Series RoHS Description Excellent for lower current heat, lamp, and audible alarm controls for home goods. Standard phase control SCRs are triggered with few milliamperes of current at less
QJxx16xHx Series. Thyristors 16 Amp High Temperature Alternistor Triacs. RoHS. Description
RoHS Description This 16A high temperature alternistor triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,
2N5060 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
50RIA SERIES 50 A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2401 rev. A 07/00. Case Style TO-208AC (TO-65)
50RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features High current rating Excellent dynamic characteristics dv/dt = 0V/µs option Superior surge capabilities Standard package Metric threads version
VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Thyristor High Voltage, Phase Control SCR, 70 A
Thyristor High Voltage, Phase Control SCR, 70 A 2 (A) FEATURES High surge capability High voltage input rectification 2 Designed and qualified according to JEDEC -JESD47 3 Super TO-247 (K) (G) 3 Material
ST300S SERIES 300A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25158 rev. B 01/94. case style TO-209AE (TO-118)
ST300S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator International standard case TO-209AE (TO-118) Threaded studs UNF 3/4-16UNF2A
Thyristors 12 Amp Alternistor (High Communitation) Triacs
Qxx12xHx Series RoHS Description This 12 Amp bidirectional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,
MAC16D, MAC16M, MAC16N. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 400 thru 800 VOLTS
MAC6D, MAC6M, MAC6N Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
Phase Control Thyristors (Stud Version), 110 A
VS-RKI...PbF, VS-RKI...PbF Series Phase Control Thyristors (Stud Version), A TO-94 (TO-29AC) PRIMARY CHARACTERISTICS I T(AV) A V DRM /V RRM 4 V, 8 V, 2 V V TM.57 V I GT 8 ma T J -4 C to +4 C Package TO-94
TIC106 SERIES SILICON CONTROLLED RECTIFIERS
TIC6 SERIES Copyright 997, Power Innovations Limited, UK APRIL 97 - REVISED MARCH 997 5 A Continuous On-State Current 3 A Surge-Current Glass Passivated Wafer 4 V to 8 V Off-State Voltage Max I GT of 2
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
PINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
S1VM02600A TO-92 (TO-226AA) SCRs 1.5 AMPERES RMS 600 VOLTS. Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES
LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 1.5 AMPERES RMS 6 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic