CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux in Chip Scale Package ADG784
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1 a FEATURE Low Insertion Loss and On Resistance: 4 Typical On-Resistance Flatness <2 Bandwidth >2 MHz ingle 3 V/5 upply Operation Rail-to-Rail Operation Very Low istortion: <1% Low Quiescent upply Current (1 na Typical) Fast witching Times t ON 1 ns t OFF 4 ns TTL/CMO Compatible For Functionally Equivalent evices in 16-Lead QOP/ OIC Packages, ee AG774 APPLICATION 1VG-AnyLAN Token Ring 4 Mbps/16 Mbps ATM25/155 NIC Adapter and Hubs Audio and Video witching Relay Replacement CMO 3 V/5 V, Wide Bandwidth Quad 2:1 Mux in Chip cale Package FUNCTIONAL BLOCK IAGRAM 1B 2A 2B 3A 3B 4A 4B 1-OF-2 ECOER GERAL ECRIPTION The is a monolithic CMO device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMO process provides low power dissipation yet gives high switching speed and low on resistance. The on-resistance variation is typically less than.5 Ω with an input signal ranging from V to 5 V. The bandwidth of the is greater than 2 MHz and this, coupled with low distortion (typically.5%), makes the part suitable for switching fast ethernet signals. The on-resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion when switching audio signals. Fast switching speed, coupled with high signal bandwidth, also makes the parts suitable for video signal switching. CMO construction ensures ultralow power dissipation making the parts ideally suited for portable and battery powered instruments. The operates from a single 3.3 V/5 V supply and is TTL logic compatible. The control logic for each switch is shown in the Truth Table. These switches conduct equally well in both directions when ON, and have an input signal range that extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked. The switches exhibit break-beforemake switching action. PROUCT HIGHLIGHT 1. Also Available as AG774 in 16-Lead QOP and OIC. 2. Wide Bandwidth ata Rates >2 MHz. 3. Ultralow Power issipation. 4. Extended ignal Range. The is fabricated on a CMO process giving an increased signal range that fully extends to the supply rails. 5. Low Leakage over Temperature. 6. Break-Before-Make witching. This prevents channel shorting when the switches are configured as a multiplexer. 7. Crosstalk is typically 7 3 MHz. 8. Off isolation is typically 6 1 MHz. 9. Available in Chip cale Package (CP). Information furnished by Analog evices is believed to be accurate and reliable. However, no responsibility is assumed by Analog evices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog evices. One Technology Way, P.O. Box 916, Norwood, MA , U..A. Tel: 781/ Fax: 781/ Analog evices, Inc., 213
2 PECIFICATION GLE UPPLY ( = 5 V 1%, = V. All specifications T M to T MAX unless otherwise noted.) B Version T M to Parameter 25 C T MAX Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V On Resistance (R ON ) 2.2 Ω typ V = V to, I = 1 ma 5 Ω max On Resistance Match Between Channels (ΔR ON ).15 Ω typ V = V to, I = 1 ma.5 Ω max On Resistance Flatness (R FLAT(ON) ).5 Ω typ V = V to ; I = 1 ma 1 Ω max LEAKAGE CURRT ource OFF Leakage I (OFF) ±.1 na typ V = 4.5 V, = 1 V; V = 1 V, = 4.5 V; ±.5 ± 1 na max Test Circuit 2 rain OFF Leakage I (OFF) ±.1 na typ V = 4.5 V, = 1 V; V = 1 V, = 4.5 V; ±.5 ± 1 na max Test Circuit 2 Channel ON Leakage I, I (ON) ±.1 na typ V = = 4.5 V; V = = 1 V; Test Circuit 3 ±.5 ± 1 na max IGITAL PUT Input High Voltage, V H 2.4 V min Input Low Voltage, V L.8 V max Input Current I L or I H.1 μa typ V = V L or V H ±.5 μa max YNAMIC CHARACTERITIC 2 t ON 1 ns typ R L = 1 Ω, = 35 pf, 2 ns max = 3 V; Test Circuit 4 t OFF 4 ns typ R L = 1 Ω, = 35 pf, 8 ns max = 3 V; Test Circuit 4 Break-Before-Make Time elay, t 5 ns typ R L = 1 Ω, = 35 pf, 1 ns min 1 = 2 = 5 V; Test Circuit 5 Off Isolation 65 db typ R L = 1 Ω, f = 1 MHz; Test Circuit 7 Channel-to-Channel Crosstalk 75 db typ R L = 1 Ω, f = 1 MHz; Test Circuit 8 Bandwidth 3 db 24 MHz typ R L = 1 Ω; Test Circuit 6 istortion.5 % typ R L = 1 Ω Charge Injection 1 pc typ = 1 nf; Test Circuit 9 C (OFF) 1 pf typ f = 1 khz C (OFF) 2 pf typ f = 1 khz C, C (ON) 3 pf typ f = 1 MHz POWER REQUIREMT = 5.5 V igital Inputs = V or I 1 μa max.1 μa typ I 1 μa typ V = 5 V I O 1 ma max /V = V NOTE 1 Temperature ranges are as follows: B Version, 4 C to +85 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. 2
3 GLE UPPLY ( = 3 V 1%, = V. All specifications T M to T MAX unless otherwise noted.) B Version T M to Parameter 25 C T MAX Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V On Resistance (R ON ) 4 Ω typ V = V to, I = 1 ma 1 Ω max On Resistance Match Between Channels (ΔR ON ).15 Ω typ V = V to, I = 1 ma.5 Ω max On Resistance Flatness (R FLAT(ON) ) 2 Ω typ V = V to, I = 1 ma 4 Ω max LEAKAGE CURRT ource OFF Leakage I (OFF) ±.1 na typ V = 3 V, = 1 V; V = 1 V, = 3 V; ±.5 ± 1 na max Test Circuit 2 rain OFF Leakage I (OFF) ±.1 na typ V = 3 V, = 1 V; V = 1 V, = 3 V; ±.5 ± 1 na max Test Circuit 2 Channel ON Leakage I, I (ON) ±.1 na typ V = = 3 V; V = = 1 V; Test Circuit 3 ±.5 ± 1 na max IGITAL PUT Input High Voltage, V H 2. V min Input Low Voltage, V L.4 V max Input Current I L or I H.1 μa typ V = V L or V H ±.5 μa max YNAMIC CHARACTERITIC 2 t ON 12 ns typ R L = 1 Ω, = 35 pf, 25 ns max = 1.5 V; Test Circuit 4 t OFF 5 ns typ R L = 1 Ω, = 35 pf, 1 ns max = 1.5 V; Test Circuit 4 Break-Before-Make Time elay, t 5 ns typ R L = 1 Ω, = 35 pf, 1 ns min 1 = 2 = 3 V; Test Circuit 5 Off Isolation 65 db typ R L = 5 Ω, f = 1 MHz; Test Circuit 7 Channel-to-Channel Crosstalk 75 db typ R L = 5 Ω, f = 1 MHz; Test Circuit 8 Bandwidth 3 db 24 MHz typ R L = 5 Ω; Test Circuit 6 istortion 2 % typ R L = 5 Ω Charge Injection 3 pc typ = 1 nf; Test Circuit 9 C (OFF) 1 pf typ f = 1 khz C (OFF) 2 pf typ f = 1 khz C, C (ON) 3 pf typ f = 1 MHz POWER REQUIREMT = 3.3 V igital Inputs = V or I 1 μa max.1 μa typ I 1 μa typ V = 3 V I O 1 ma max /V = V NOTE 1 Temperature ranges are as follows: B Version, 4 C to +85 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. Table I. Truth Table Function 1 X Hi-Z Hi-Z Hi-Z Hi-Z IABLE 2A 3A 4A = 1 1B 2B 3B 4B = 1 3
4 2 NC NC NC 18 V 17 NC ABOLUTE MAXIMUM RATG 1 (T A = 25 C unless otherwise noted.) to V to +6 V Analog, igital Inputs V to +.3 V or 3 ma, Whichever Occurs First Continuous Current, or ma Peak Current, or ma (Pulsed at 1 ms, 1% uty Cycle max) Operating Temperature Range Industrial (B Version) C to +85 C torage Temperature Range C to +15 C Junction Temperature C Chip cale Package θ JA Thermal Impedance C/W Lead Temperature, oldering Vapor Phase (6 sec) C Infrared (15 sec) C E kv NOTE 1 tresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at, or will be clamped by internal diodes. Current should be limited to the maximum ratings given. P CONFIGURATION 1 1B A 4 2B 5 16 TOP VIEW (Not to cale) 15 4A 14 4B A 11 3B NOTE 1. NC = NO CONNECT. 2. EXPOE PA TIE TO UBTRATE,. TERMOLOGY Most Positive Power upply Potential. Ground ( V) Reference. ource Terminal. May be an input or output. rain Terminal. May be an input or output. Logic Control Input. Logic Control Input. R ON Ohmic resistance between and. ΔR ON On Resistance match between any two channels i.e., R ON max R ON min. R FLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. I (OFF) ource Leakage Current with the switch OFF. I (OFF) rain Leakage Current with the switch OFF. I, I (ON) Channel Leakage Current with the switch ON. V ( ) Analog Voltage on Terminals,. C (OFF) OFF witch ource Capacitance. C (OFF) OFF witch rain Capacitance. C, C (ON) ON witch Capacitance. t ON elay between applying the digital control input and the output switching on. ee Test Circuit 4. t OFF elay between applying the digital control input and the output switching Off. t OFF time or ON time measured between the 9% points of both switches, when switching from one address state to another. ee Test Circuit 5. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an OFF switch. Bandwidth Frequency response of the switch in the ON state measured at 3 db down. istortion R FLAT(ON) /R L CAUTION E (electrostatic discharge) sensitive device. Electrostatic charges as high as 4 V readily accumulate on the human body and test equipment and can discharge without detection. Although the features proprietary E protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper E precautions are recommended to avoid performance degradation or loss of functionality. WARNG! E ITIVE EVICE 4
5 Typical Performance Characteristics = 2.7V T A = 25 C = 5V R ON = 3.V = 4.5V = 5.V ON REPONE db OR V RA OR OURCE VOLTAGE V 6 1k 1k 1M 1M 1M FREQUCY Hz TPC 1. On Resistance as a Function of V ( ) for Various ingle upplies TPC 4. On Response vs. Frequency = 5V 1 2 = 5V R L = 1 R ON C +25 C 4 C ATTUATION db OR V O RA OR OURCE VOLTAGE V 1 1k 1M 1M 1M FREQUCY Hz 1G TPC 2. On Resistance as a Function of V ( ) for ifferent Temperatures with 5 ingle upplies TPC 5. Off Isolation vs. Frequency = 3V +85 C 1 2 = 5V R L = 1 V P-P =.316V R ON C 4 C ATTUATION db OR V RA OR OURCE VOLTAGE V 1 1k 1M 1M 1M FREQUCY Hz 1G TPC 3. On Resistance as a Function of V ( ) for ifferent Temperatures with 3 ingle upplies TPC 6. Crosstalk vs. Frequency 5
6 2 15 = 5V T A = 25 C CHARGE JECTION pc OURCE VOLTAGE V TPC 7. Charge Injection vs. ource Voltage 1 BAE TX+ 1 BAE TX TX1 1 BAE TX+ 1 BAE TX TX2 RJ45 1 BAE TX+ 1 BAE TX 1 BAE TX+ 1 BAE TX RX1 RX2 TRANFORMER 1 BAE TX 1 BAE TX Figure 1. Full uplex Transceiver TX1 RX Figure 2. Loop Back Figure 3. Line Termination Figure 4. Line Clamp 6
7 Test Circuits I V1 I (OFF) A I (OFF) A I (ON) A R ON = V1/I V V Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage 5V.1 F V 3V 5% 5% 9% 9% R L 1 35pF t ON t OFF Test Circuit 4. witching Times.1 F 5V 3V V V 5% 5% 1 OUT 1B V V R L V 5% 5% OUT 1 35pF ECOER t t Test Circuit 5. Break-Before-Make Time elay.1 F.1 F NETWORK ANALYZER NETWORK ANALYZER V 1 V 1 Test Circuit 6. Bandwidth Test Circuit 7. Off Isolation 7
8 .1 F 2A NETWORK ANALYZER V 1 2 Test Circuit 8. Channel-to-Channel Crosstalk 5V R 1B 2A 2B 3A 3B 4A 4B 1-OF-2 ECOER 1nF 1nF 1nF 1nF V 3V Q J = Test Circuit 9. Charge Injection 8
9 OUTLE IMION P 1 ICATOR Q BC P 1 ICATOR EXPOE PA Q EATG PLANE TOP VIEW MAX.2 NOM COPLANARITY.8.2 REF BOTTOM VIEW COMPLIANT TO JEEC TANAR MO-22-WGG-1. Figure Lead Lead Frame Chip cale Package [LFCP_WQ] 4 mm 4 mm Body, Very Very Thin Quad (CP-2-6) imensions shown in millimeters.2 M FOR PROPER CONNECTION OF THE EXPOE PA, REFER TO THE P CONFIGURATION AN FUNCTION ECRIPTION ECTION OF THI ATA HEET B ORERG GUIE Model 1 Temperature Range Package escription Package Option BCPZ 4 C to +85 C 2-Lead LFCP_WQ CP-2-6 BCPZ-REEL 4 C to +85 C 2-Lead LFCP_WQ CP-2-6 BCPZ-REEL7 4 C to +85 C 2-Lead LFCP_WQ CP Z = RoH Compliant Part. REVIION HITORY 2/13 Rev. to Rev. A Changes to Pin Configuration... 4 Updated Outline imensions... 9 Changes to Ordering Guide /1 Revision : Initial Version 213 Analog evices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners /13(A) Rev. A Page 9
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