CMOS 1.8 V to 5.5 V, 2.5 2:1 MUX/SPDT Switch in SC70 Package ADG749
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1 a FEATURE 1.8 V to 5.5 ingle upply 5 (Max) On Resistance.75 (Typ) On Resistance Flatness Automotive Temperature Range: 4 C to +125 C 3 db Bandwidth > 2 MHz Rail-to-Rail Operation 6-Lead C7 Package Fast witching Times: t ON = 12 ns t OFF = 6 ns Typical Power Consumption (<.1 W) TTL/CMO Compatible APPLICATION Battery-Powered ystems Communication ystems ample-and-hold ystems Audio ignal Routing Video witching Mechanical Reed Relay Replacement CMO 1.8 V to 5.5 V, 2.5 2:1 MUX/PT witch in C7 Package AG749 FUNCTIONAL BLOCK IAGRAM 2 1 AG749 *WITCHE HOWN FOR A LOGIC 1 PUT GENERAL ECRIPTION The AG749 is a monolithic CMO PT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The AG749 can operate from a single-supply range of 1.8 V to 5.5 V, making it ideal for use in battery-powered instruments and with the new generation of ACs and ACs from Analog evices. Each switch of the AG749 conducts equally well in both directions when on. The AG749 exhibits break-before-make switching action. Because of the advanced submicron process, 3 db bandwidths of greater than 2 MHz can be achieved. The AG749 is available in a 6-lead C7 package. PROUCT HIGHLIGHT V to 5.5 ingle-upply Operation. The AG749 offers high performance, including low on resistance and fast switching times, and is fully specified and guaranteed with 3V and 5 V supply rails. 2. Very Low R ON (5 Ω Max at 5 V and 1 Ω Max at 3 V). At 1.8 V operation, R ON is typically 4 Ω over the temperature range. 3. Automotive Temperature Range: 4 C to 125 C. 4. On Resistance Flatness (R FLAT(ON) ) (.75 Ω typ) db Bandwidth > 2 MHz. 6. Low Power issipation. CMO construction ensures low power dissipation. 7. Fast t ON /t OFF. 8. Tiny 6-lead C7 package. REV. A Information furnished by Analog evices is believed to be accurate and reliable. However, no responsibility is assumed by Analog evices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog evices. One Technology Way, P.O. Box 916, Norwood, MA , U..A. Tel: 781/ Fax: 781/ Analog evices, Inc., 22
2 AG749 PECIFICATION 1 B Version (V = 5 V 1%, GN = V.) 4 C to 4 C to Parameter 25 C +85 C +125 C Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V V On Resistance (R ON ) 2.5 Ω typ = V to V, I = 1 ma; Ω max Test Circuit 1 On Resistance Match Between Channels ( R ON ).1 Ω typ = V to V, I = 1 ma.8.8 Ω max On Resistance Flatness (R FLAT(ON) ).75 Ω typ = V to V, I = 1 ma Ω max LEAKAGE CURRENT 2 V = 5.5 V ource Off Leakage I (Off) ±.1 na typ = 4.5 V/1 V, V = 1 V/4.5 V; ±.25 ±.35 1 na max Test Circuit 2 Channel On Leakage I, I (On) ±.1 na typ = V = 1 V or = V = 4.5 V; ±.25 ±.35 5 na max Test Circuit 3 IGITAL PUT Input High Voltage, V H 2.4 V min Input Low Voltage, V L.8 V max Input Current I L or I H.5 µa typ V = V L or V H ±.1 µa max YNAMIC CHARACTERITIC 2 t ON 7 ns typ R L = 3 Ω, C L = 35 pf 12 ns max = 3 V; Test Circuit 4 t OFF 3 ns typ R L = 3 Ω, C L = 35 pf 6 ns max = 3 V; Test Circuit 4 Break-Before-Make Time elay, t 8 ns typ R L = 3 Ω, C L = 35 pf, 1 ns min 1 = 2 = 3 V; Test Circuit 5 Off Isolation 67 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz 87 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz; Test Circuit 6 Channel-to-Channel Crosstalk 62 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz 82 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz; Test Circuit 7 Bandwidth 3 db 2 MHz typ R L = 5 Ω, C L = 5 pf; Test Circuit 8 C (OFF) 7 pf typ C, C (ON) 27 pf typ POWER REQUIREMENT I.1 µa typ 1. µa max NOTE 1 Temperature range is as follows: B Version: 4 C to +125 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. V = 5.5 V igital Inputs = V or 5.5 V 2 REV. A
3 PECIFICATION 1 (V = 3 V 1%, GN = V.) B Version 4 C to 4 C to Parameter 25 C +85 C +125 C Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V V On Resistance (R ON ) 6 7 Ω typ = V to V, I = 1 ma; 1 12 Ω max Test Circuit 1 On Resistance Match Between Channels ( R ON ).1 Ω typ = V to V, I = 1 ma.8.8 Ω max On Resistance Flatness (R FLAT(ON) ) 2.5 Ω typ = V to V, I = 1 ma AG749 LEAKAGE CURRENT 2 V = 3.3 V ource Off Leakage I (Off) ±.1 na typ = 3 V/1 V, V = 1 V/3 V; ±.25 ±.35 1 na max Test Circuit 2 Channel On Leakage I, I (On) ±.1 na typ = V = 1 V or = V = 3 V; ±.25 ±.35 5 na max Test Circuit 3 IGITAL PUT Input High Voltage, V H 2. V min Input Low Voltage, V L.8 V max Input Current I L or I H.5 µa typ V = V L or V H ±.1 µa max YNAMIC CHARACTERITIC 2 t ON 1 ns typ R L = 3 Ω, C L = 35 pf 15 ns max = 2 V; Test Circuit 4 t OFF 4 ns typ R L = 3 Ω, C L = 35 pf 8 ns max = 2 V; Test Circuit 4 Break-Before-Make Time elay, t 8 ns typ R L = 3 Ω, C L = 35 pf 1 ns min 1 = 2 = 2 V; Test Circuit 5 Off Isolation 67 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz 87 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz; Test Circuit 6 Channel-to-Channel Crosstalk 62 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz 82 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz; Test Circuit 7 Bandwidth 3 db 2 MHz typ R L = 5 Ω, C L = 5 pf; Test Circuit 8 C (Off) 7 pf typ C, C (On) 27 pf typ POWER REQUIREMENT I.1 µa typ 1. µa max NOTE 1 Temperature range is as follows: B Version: 4 C to +125 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. V = 3.3 V igital Inputs = V or 3.3 V REV. A 3
4 AG749 ABOLUTE MAXIMUM RATG 1 (T A = 25 C, unless otherwise noted) V to GN V to +7 V Analog, igital Inputs V to V +.3 V or 3 ma, Whichever Occurs First Peak Current, or ma (Pulsed at 1 ms, 1% uty Cycle Max) Continuous Current, or ma Operating Temperature Range Industrial (B Version) C to +125 C torage Temperature Range C to +15 C Junction Temperature C C7 Package, Power issipation mw θ JA Thermal Impedance C/W θ JC Thermal Impedance C/W Lead Temperature, oldering Vapor Phase (6 sec) C Infrared (15 sec) C E kv 1 tresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at,, or will be clamped by internal diodes. Current should be limited to the maximum ratings given. Table I. Truth Table AG749 witch 1 witch 2 ON OFF 1 OFF ON P CONFIGURATION TERMOLOGY V Most Positive Power upply Potential GN Ground ( V) Reference ource Terminal. May be an input or output. rain Terminal. May be an input or output. Logic Control Input R ON Ohmic Resistance between and R ON On Resistance Match between any Two Channels i.e., R ON max R ON min R FLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. I (Off) ource Leakage Current with the witch Off I, I (On) Channel Leakage Current with the witch On V ( ) Analog Voltage on Terminals and C (Off) Off witch ource Capacitance C, C (On) On witch Capacitance t ON elay between applying the digital control input and the output switching on. t OFF elay between applying the digital control input and the output switching off. t Off time or on time measured between the 9% points of both switches, when switching from one address state to another. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an off switch. Bandwidth The frequency at which the output is attenuated by 3 dbs. On Response The Frequency Response of the On witch Insertion Loss Loss due to On Resistance of the witch V GN AG749 TOP VIEW (Not to cale) ORERG GUIE Model Temperature Range Package escription Package Option Branding Information* AG749BK 4 C to +125 C C7 (6-Lead Plastic urface Mount) K-6 HB *Branding on this package is limited to three characters due to space constraints. CAUTION E (electrostatic discharge) sensitive device. Electrostatic charges as high as 4 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AG749 features proprietary E protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper E precautions are recommended to avoid performance degradation or loss of functionality. WARNG! E ENITIVE EVICE 4 REV. A
5 Typical Performance Characteristics AG V = 2.7V T A = 25 C.15 V = 5V V = 4.5V/1V = 1V/4.5V R ON V = 3.V V = 5.V V = 4.5V CURRENT na.5 I, I (ON) I (OFF) V OR RA OR OURCE VOLTAGE V TPC 1. On Resistance vs. V ( ) ingle upplies TEMPERATURE C TPC 4. Leakage Currents vs. Temperature R ON V = 3V C C 4. 4 C V OR RA OR OURCE VOLTAGE V CURRENT na I (OFF) I, I (ON) V = 3V V = 3V/1V = 1V/3V TEMPERATURE C TPC 2. On Resistance vs. V ( ) for ifferent Temperatures V = 3 V TPC 5. Leakage Currents vs. Temperature R ON V = 5V C C 2. 4 C V OR RA OR OURCE VOLTAGE V I UPPLY A 1m V = 5V 1m n 1n 1n k 1k 1k 1M 1M 1M FREQUENCY Hz TPC 3. On Resistance vs. V ( ) for ifferent Temperatures, V = 5 V TPC 6. upply Current vs. Input witching Frequency REV. A 5
6 AG V = 5V, 3V V = 5V OFF IOLATION db ON REPONE db k 1k 1M 1M 1M FREQUENCY Hz 6 1k 1k 1M 1M 1M FREQUENCY Hz TPC 7. Off Isolation vs. Frequency TPC 9. On Response vs. Frequency 3 4 V = 5V, 3V 12 1 CROTALK db Q J pc V = 3V V = 5V 13 1k 1k 1M 1M 1M FREQUENCY Hz TPC 8. Crosstalk vs. Frequency V TPC 1. Charge Injection vs. ource Voltage 6 REV. A
7 Test Circuits Test Circuits 1 to 8 define the test conditions used in the product specification table. AG749 I V1 R ON = V1/I I (OFF) I (OFF) A A V I (ON) A V Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage.1 F V V 5% 5% V GN R L 3 C L 35pF t ON 9% 9% t OFF Test Circuit 4. witching Times V.1 F V 2 R L2 3 C L2 35pF V V V 5% 5% 5% 5% V GN t t Test Circuit 5. Break-Before-Make Time elay, t V V.1 F V V GN NETWORK ANALYZER R L OFF IOLATION = 2 LOG NETWORK ANALYZER R L.1 F V 1 2 GN R CHANNEL-TO-CHANNEL CROTALK = 2 LOG V.1 F V V GN ERTION LO = 2 LOG NETWORK ANALYZER R L WITH WITCH WITHOUT WITCH Test Circuit 6. Off Isolation Test Circuit 7. Channel-to-Channel Crosstalk Test Circuit 8. Bandwidth REV. A 7
8 AG749 APPLICATION FORMATION The AG749 belongs to Analog evices new family of CMO switches. This series of general-purpose switches has improved switching times, lower on resistance, higher bandwidths, low power consumption, and low leakage currents. AG749 upply Voltages Functionality of the AG749 extends from 1.8 V to 5.5 V single supply, which makes it ideal for battery-powered instruments, where power efficiency and performance are important design parameters. It is important to note that the supply voltage effects the input signal range, the on resistance, and the switching times of the part. By taking a look at the typical performance characteristics and the specifications, the effects of the power supplies can be clearly seen. For V = 1.8 V operation, R ON is typically 4 Ω over the temperature range. On Response vs. Frequency Figure 1 illustrates the parasitic components that affect the ac performance of CMO switches (the switch is shown surrounded by a box). Additional external capacitances will further degrade some performance. These capacitances affect feedthrough, crosstalk, and system bandwidth. The signal transfer characteristic is dependent on the switch channel capacitance, C. This capacitance creates a frequency zero in the numerator of the transfer function A(s). Because the switch on resistance is small, this zero usually occurs at high frequencies. The bandwidth is a function of the switch output capacitance combined with C and the load capacitance. The frequency pole corresponding to these capacitances appears in the denominator of A(s). The dominant effect of the output capacitance, C, causes the pole breakpoint frequency to occur first. Therefore, in order to maximize bandwidth, a switch must have a low input and output capacitance and low on resistance. The On Response vs. Frequency plot for the AG749 can be seen in TPC 9. Off Isolation Off isolation is a measure of the input signal coupled through an off switch to the switch output. The capacitance, C, couples the input signal to the output load when the switch is off, as shown in Figure 2. C V C CLOA RLOA C V R ON C CLOA RLOA Figure 1. witch Represented by Equivalent Parasitic Components The transfer function that describes the equivalent diagram of the switch (Figure 1) is of the form A(s) shown below. where: R = R R + R C = C + C + C s(r ON C ) +1 A(s) = R T s(r T R ON C T ) +1 ( ) T LOA LOA ON T LOA Figure 2. Off Isolation Is Affected by External Load Resistance and Capacitance The larger the value of C, the larger the values of feedthrough that will be produced. The typical performance characteristic graph of TPC 7 illustrates the drop in off isolation as a function of frequency. From dc to roughly 2 khz, the switch shows better than 95 db isolation. Up to frequencies of 1 MHz, the off isolation remains better than 67 db. As the frequency increases, more and more of the input signal is coupled through to the output. Off isolation can be maximized by choosing a switch with the smallest C possible. The values of load resistance and capacitance also affect off isolation, since they contribute to the coefficients of the poles and zeros in the transfer function of the switch when open. s(r LOA C ) A(s) = s(r LOA )(C LOA + C + C ) +1 8 REV. A
9 AG749 OUTLE IMENION 6-Lead Plastic urface Mount Package [C7] (K-6) imensions shown in millimeters 2. BC 1.25 BC BC P 1.1 MAX COPLANARITY 1.3 BC BC 1.1 MAX EATG PLANE COMPLIANT TO JEEC TANAR MO-23AB REV. A 9
10 AG749 Revision History Location Page 7/2 ata heet changed from REV. to REV. A. Changes to FEATURE Additions to PROUCT HIGHLIGHT Changes to PECIFICATION Edits to ABOLUTE MAXIMUM RATG Changes to TERMOLOGY Edits to ORERG GUIE Added new TPCs 4 and Added TPC TET CIRCUIT 6, 7, and 8 replaced Updated K-6 Package rawing REV. A
11 11
12 PRTE U..A. C275 7/2(A) 12
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More information0.5 Ω CMOS, 1.8 V to 5.5 V, Dual SPDT/2:1 Mux, Mini LFCSP ADG854
.5 Ω CMOS, 1.8 V to 5.5 V, Dual SPDT/2:1 Mux, Mini LFCSP ADG854 FEATURES.8 Ω typical on resistance Less than 1 Ω maximum on resistance at 85 C 1.8 V to 5.5 V single supply High current carrying capability:
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More informationTITLE MICROCIRCUIT, LINEAR, LC 2 MOS, QUAD SPST SWITCHES, MONOLITHIC SILICON REVISIONS LTR DESCRIPTION DATE APPROVED REV PAGE REV PAGE REV
REIION LTR ECRIPTION TE PPROE Prepared in accordance with ME Y14.24 endor item drawing RE PGE RE PGE RE TTU OF PGE RE PGE 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/ PREPRE BY Phu H. Nguyen L LN N MRITIME 43218-3990
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