1.3 Ω CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package ADG859

Size: px

Start display at page:

Download "1.3 Ω CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package ADG859"

Marylou Warren
6 years ago
Views:

1 1.3 Ω CMOS, 1.8 V to 5.5 ingle SPT Switch/2:1 MUX in SOT-66 Package AG859 FEATURES 1.8 V to 5.5 V single supply Tiny 1.65 mm 1.65 mm package Low on resistance: 1.3 Ω at 5 V supply High current-carrying capability: 3 ma continuous current 5 ma peak current at 5 V Rail-to-rail operation Typical power consumption: <.1 μw TTL-/CMOS-compatible inputs APPLICATIONS Cellular phones PAs MP3 players Battery-powered systems Audio and video signal routing Modems PCMCIA cards Hard drives Relay replacement GENERAL ESCRIPTION The AG859 is a monolithic, CMOS SPT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of 4 C to +125 C. The AG859 also has the capability of carrying large amounts of current, typically 3 ma at 5 V operation. These features make the AG859 an ideal solution for applications that are space-constrained, such as handsets, PAs, and MP3 players. Each switch conducts equally well in both directions when on. The device exhibits break-before-make switching action, thereby preventing momentary shorting when switching channels. The AG859 is available in a tiny 6-lead SOT-66 package. FUNCTIONAL BLOCK IAGRAM S2 S1 IN AG859 SWITCHES SHOWN FOR A LOGIC 1 INPUT Figure 1. PROUCT HIGHLIGHTS 1. Low on resistance: 2.3 Ω maximum over the full temperature range of 4 C to +125 C. 2. High current-carrying capability. 3. Tiny 6-lead, 1.65 mm 1.65 mm SOT-66 package Rev. A Information furnished by Analog evices is believed to be accurate and reliable. However, no responsibility is assumed by Analog evices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog evices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 916, Norwood, MA , U.S.A. Tel: Fax: Analog evices, Inc. All rights reserved.

2 TABLE OF CONTENTS Features... 1 Applications... 1 Functional Block iagram... 1 General escription... 1 Product Highlights... 1 Revision History... 2 Specifications... 3 Absolute Maximum Ratings... 5 ES Caution...5 Pin Configuration and Function escriptions...6 Typical Performance Characteristics...7 Test Circuits... 1 Terminology Outline imensions Ordering Guide REVISION HISTORY 12/6 Rev. to Rev. A Changes to the Ordering Guide /5 Revision : Initial Version Rev. A Page 2 of 16

3 SPECIFICATIONS V = 5 V ± 1%, GN = V, unless otherwise noted. 1 Table 1. Parameter 25 C 4 C to +85 C 4 C to +125 C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range to V V On Resistance, RON 1.3 Ω typ V = 4.5 V, VS = V to V, IS = 1 ma; Ω max Figure 16 On Resistance Match Between Channels, RON.1 Ω typ V = 4.5 V, VS = 4.5V, IS = 1 ma; Ω max Figure 16 On Resistance Flatness, RFLAT (ON).32 Ω typ V = 4.5 V, VS = V to V, IS = 1 ma; Ω max Figure 16 LEAKAGE CURRENTS V = 5.5 V Source Off Leakage, IS (Off) ±.2 na typ VS = 4.5 V/1 V, V = 1 V/4.5 V; Figure 17 Channel On Leakage, I, IS (On) ±.2 na typ VS = V = 1 V or 4.5 V; Figure 18 IGITAL INPUTS Input High Voltage, VINH 2 V min Input Low Voltage, VINL.8 V max Input Current, IINL or IINH.5 μa typ VIN = VINL or VINH ±.1 μa max igital Input Capacitance, CIN 4 pf typ YNAMIC CHARACTERISTICS 2 ton 8 ns typ RL = 5 Ω, CL = 35 pf ns max VS = 3 V; Figure 19 toff 4.5 ns typ RL = 5 Ω, CL = 35 pf ns max VS = 3 V; Figure 19 Break-Before-Make Time elay, tbbm 4 ns typ RL = 5 Ω, CL = 35 pf 1 ns min VS1 = VS2 = 1.5 V; Figure 2 Charge Injection ±13 pc typ VS = V, RS = Ω, CL = 1 nf; Figure 21 Off Isolation 78 db typ RL = 5 Ω, CL = 5 pf, f = 1 khz; Figure 22 Channel-to-Channel Crosstalk 78 db typ RL = 5 Ω, CL = 5 pf, f = 1 khz; Figure 23 3 db Bandwidth 125 MHz typ RL = 5 Ω, CL = 5 pf; Figure 24 Insertion Loss.11 db typ RL = 5 Ω, CL = 5 pf; Figure 24 Total Harmonic istortion (TH + N).62 % RL = 32 Ω, f = 2 Hz to 2 khz, VS = 3 V p-p; Figure 14 CS (Off) 18 pf typ f = 1 MHz C, CS (On) 45 pf typ f = 1 MHz POWER REQUIREMENTS V = 5.5 V I.1 μa typ igital inputs = V or 5.5 V 1 μa max 1 Temperature range is 4 C to +125 C. 2 Guaranteed by design; not subject to production test. Rev. A Page 3 of 16

4 V = 2.7 V to 3.6 V, GN = V, unless otherwise noted. 1 Table 2. Parameter 25 C 4 C to +85 C 4 C to +125 C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range to V V On Resistance, RON 3 Ω typ V = 2.7 V, VS = V to V, IS = 1 ma; Ω max Figure 16 On Resistance Match Between Channels, RON.3 Ω typ V = 2.7 V, VS = 1.2 V, IS = 1 ma; Ω max Figure 16 LEAKAGE CURRENTS V = 3.6 V Source Off Leakage, IS (Off) ±.2 na typ VS = 3 V/1 V, V = 1 V/3 V; Figure 17 Channel On Leakage, I, IS (On) ±.5 na typ VS = V = 1 V or 3 V; Figure 18 IGITAL INPUTS Input High Voltage, VINH 2. V min Input Low Voltage, VINL.8 V max V = 3 V to 3.6 V.7 V max V = 2.7 V Input Current, IINL or IIN.5 μa typ VIN = VINL or VINH ±.1 ±.1 μa max igital Input Capacitance, CIN 4 pf typ YNAMIC CHARACTERISTICS 2 ton 11 ns typ RL = 5 Ω, CL = 35 pf ns max VS = 1.5 V; Figure 19 toff 6 ns typ RL = 5 Ω, CL = 35 pf ns max VS = 1.5 V; Figure 19 Break-Before-Make Time elay, tbbm 5 ns typ RL = 5 Ω, CL = 35 pf 1 ns min VS1 = VS2 = 1.5 V; Figure 2 Charge Injection ±7 pc typ VS = V, RS = Ω, CL = 1 nf; Figure 21 Off Isolation 78 db typ RL = 5 Ω, CL = 5 pf, f = 1 khz; Figure 22 Channel-to-Channel Crosstalk 78 db typ S1 to S2; RL = 5 Ω, CL = 5 pf, f = 1 khz; Figure 23 3 db Bandwidth 125 MHz typ RL = 5 Ω, CL = 5 pf; Figure 24 Insertion Loss.11 db typ RL = 5 Ω, CL = 5 pf; Figure 24 Total Harmonic istortion (TH + N).1 % RL = 32 Ω, f = 2 Hz to 2 khz, VS = 2 V p-p; Figure 14 CS (Off) 18 pf typ f = 1 MHz C, CS (On) 46 pf typ f = 1 MHz POWER REQUIREMENTS V = 3.6 V I.1 μa typ igital inputs = V or 3.6 V 1 μa max 1 Temperature range is 4 C to +125 C. 2 Guaranteed by design; not subject to production test. Rev. A Page 4 of 16

5 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted. Table 3. Parameter V to GN Analog Inputs 1 igital Inputs 1 Rating.3 V to +7. V.3 V to V +.3 V or 3 ma, whichever occurs first.3 V to V +.3 V or 3 ma, whichever occurs first Peak Current, S or 5 V Operation 5 ma 3 V Operation 46 ma Continuous Current, S or 5 V Operation 3 ma 3 V Operation 275 ma Operating Temperature Range Automotive 4 C to +85 C Storage Temperature Range 65 C to +15 C Junction Temperature 15 C SOT-66 Package (4-Layer Board) θja Thermal Impedance 191 C/W Lead-Free Reflow Peak Temperature Time at Peak Temperature 26 (+/ 5) C 1 sec to 4 sec Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. Table 4. Truth Table Logic (IN) Switch 2 (S2) Switch 1 (S1) Off On 1 On Off ES CAUTION 1 Overvoltages at S or are clamped by internal diodes. Current should be limited to the maximum ratings given. Rev. A Page 5 of 16

6 PIN CONFIGURATION AN FUNCTION ESCRIPTIONS IN 1 2 GN 3 AG859 TOP VIEW (Not to Scale) S2 S1 Figure 2. 6-Lead SOT-66 Pin Configuration Table 5. Pin Function escriptions Pin No. Mnemonic escription 1 IN Logic Control Input. 2 V Most Positive Power Supply Potential. 3 GN Ground ( V) Reference. 4 S1 Source Terminal. Can be an input or an output. 5 rain Terminal. Can be an input or an output. 6 S2 Source Terminal. Can be an input or an output Rev. A Page 6 of 16

7 TYPICAL PERFORMANCE CHARACTERISTICS R ON (Ω) =4.5V =5V =5.5V T A = 25 C I S = 1mA ON RESISTANCE (Ω) C +125 C 4 C +85 C /V (V) Figure 3. On Resistance vs. VS (V), V = 5 V ± 1% SOURCE VOLTAGE (V) Figure 6. On Resistance vs. Source Voltage for ifferent Temperatures, V = 3 V =3V I S = 1mA =2.7V T A =25 C I S = 1mA 5 4 = 5V R ON (Ω) =3V =3.6V =3.3V LEAKAGE (na) I, I S (ON) /V (V) Figure 4. On Resistance vs. VS (V), V = 2.7 V to 3.6 V I S (OFF) TEMPERATURE ( C) Figure 7. Leakage vs. Temperature, V = 5 V ON RESISTANCE (Ω) C +85 C 4 C SOURCE VOLTAGE (V) +125 C Figure 5. On Resistance vs. Source Voltage for ifferent Temperatures, V = 5 V =5V I S = 1mA LEAKAGE (na) 4.5 = 3V I, I S (ON) I S (OFF) TEMPERATURE ( C) Figure 8. Leakage vs. Temperature, V = 3 V Rev. A Page 7 of 16

8 3 25 T A = 25 C 2 T A = 25 C = 3V/5V CHARGE INJECTION (pc) = 5V = 3V ATTENUATION (db) V (V) Figure 9. Charge Injection vs. Source Voltage k 1k 1k 1M 1M 1M FREQUENCY (Hz) Figure 12. Off Isolation vs. Frequency T A = 25 C = 3V/5V TIME (ns) = 3.3V t ON = 5V = 3.3V t OFF = 5V ATTENUATION (db) TEMPERATURE ( C) Figure 1. ton/toff Times vs. Temperature k 1k 1k 1M 1M FREQUENCY (Hz) Figure 13. Crosstalk vs. Frequency M ON RESPONSE (db) T A = 25 C = 3V/5V k 1k 1k 1M 1M 1M 1G FREQUENCY (Hz) Figure 11. Bandwidth TH + N (%).2.18 T A = 25 C = 3V, = 2V p-p = 5V, = 3V p-p.4.2 5k 1k 15k 2k FREQUENCY (Hz) Figure 14. Total Harmonic istortion + Noise Rev. A Page 8 of 16

9 2 T A = 25 C = 3V/5V NO SUPPLY ECOUPLING 4 PSRR (db) k 1k 1k 1M 1M 1M FREQUENCY (Hz) Figure 15. PSRR Rev. A Page 9 of 16

10 TEST CIRCUITS V S Figure 16. On Resistance I S I S (OFF) A S I (OFF) A Figure 17. Off Leakage V NC I (ON) S A NC = NO CONNECT Figure 18. On Leakage V µF V IN 5% 5% S2 S1 V IN 5% 5% IN R L 5Ω C L 35pF 9% 9% V IN GN t ON t OFF Figure 19. Switching Times, ton, toff.1µf V IN S2 S1 IN R L 5Ω C L 35pF 8% V IN GN t BBM t BBM Figure 2. Break-Before-Make Time elay, tbbm.1µf V IN (NORMALLY CLOSE SWITCH) ON OFF S2 S1 NC V IN (NORMALLY OPEN SWITCH) IN C L 1nF V IN GN Δ Q INJ =C L Δ NC = NO CONNECT Figure 21. Charge Injection Rev. A Page 1 of 16

11 .1µF NC NETWORK ANALYZER IN S1 S2 5Ω 5Ω V IN GN R L 5Ω OFF ISOLATION = 2 log NC = NO CONNECT Figure 22. Off Isolation µF NETWORK ANALYZER R L 5Ω 5Ω IN S1 S2 GN R 5Ω CHANNEL-TO-CHANNEL CROSSTALK = 2 log Figure 23. Channel-to-Channel Crosstalk µF NC NETWORK ANALYZER IN S1 S2 5Ω V IN GN R L 5Ω WITH SWITCH INSERTION LOSS = 2 log WITHOUT SWITCH NC = NO CONNECT Figure 24. Bandwidth Rev. A Page 11 of 16

12 TERMINOLOGY V Most positive power supply potential. I Positive supply current. GN Ground ( V) reference. S Source terminal. Can be an input or an output. rain terminal. Can be an input or an output. IN Logic control input. V (VS) Analog voltage on the and S terminals. RON Ohmic resistance between the and S terminals. RFLAT (ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured. ΔRON On resistance mismatch between any two channels. IS (Off) Source leakage current with the switch off. I (Off) rain leakage current with the switch off. I, IS (On) Channel leakage current with the switch on. VINL Maximum input voltage for Logic. VINH Minimum input voltage for Logic 1. IINL (IINH) Input current of the digital input. CS (Off) Off switch source capacitance. Measured with reference to ground. C (Off) Off switch drain capacitance. Measured with reference to ground. C, CS (On) On switch capacitance. Measured with reference to ground. CIN igital input capacitance. ton elay time between the 5% and 9% points of the digital input and switch on condition. toff elay time between the 5% and 9% points of the digital input and switch off condition. tbbm On or off time measured between the 8% points of both switches when switching from one to another. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on/off switching. Off Isolation A measure of unwanted signal coupling through an off switch. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. 3 db Bandwidth The frequency at which the output is attenuated by 3 db. On Response The frequency response of the on switch. Insertion Loss The loss due to the on resistance of the switch. TH + N The ratio of harmonic amplitudes plus noise of a signal to the fundamental. Rev. A Page 12 of 16

13 OUTLINE IMENSIONS PIN MAX TOP VIEW NOM.5 MIN.25 MAX.17 MIN.2 MIN BOTTOM VIEW.5 BSC MAX.27 NOM SEATING PLANE Figure Lead Small Outline Transistor Package [SOT-66] (RY-6-1) imensions shown in millimeters ORERING GUIE Model Temperature Range Package escription Package Option Branding 1 AG859YRYZ-REEL 2 4 C to +125 C 6-Lead Small Outline Transistor Package [SOT-66] RY AG859YRYZ-REEL7 2 4 C to +125 C 6-Lead Small Outline Transistor Package [SOT-66] RY AG859BRYZ-REEL 2 4 C to +85 C 6-Lead Small Outline Transistor Package [SOT-66] RY AG859BRYZ-REEL7 2 4 C to +85 C 6-Lead Small Outline Transistor Package [SOT-66] RY EVAL-AG859EB Evaluation Board 1 Branding on this package is limited to two characters due to space constraints. 2 Z = Pb-free part. Rev. A Page 13 of 16

14 NOTES Rev. A Page 14 of 16

15 NOTES Rev. A Page 15 of 16

3 V/5 V CMOS 0.5 Ω SPDT/2:1 Mux in SC70 ADG849

3 V/5 V CMOS 0.5 Ω SPDT/2:1 Mux in SC70 ADG849 3 V/5 V CMOS.5 Ω SPT/2: Mux in SC7 AG849 FEATURES Ultralow on-resistance:.5 Ω typical.8 Ω maximum at 5 V supply Excellent audio performance, ultralow distortion:.3 Ω typical.24 Ω maximum RON flatness High