FEATURES APPLICATIONS. Switches are shown for a Logic 0 Input

Transcription

1 2, Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches ESCRIPTION The G251, G252, and G253 are monolithic quad single-pole single-throw (SPST) analog switches that operate from a single 1.8 V to 5.5 V power supply. These switches are fully specified at 3 V and 5 V. The parts feature low parasitic capacitance, low charge injection, and low leakage performance over the full operating temperature range of -4 C to +85 C. Their ES/HBM tolerance is over 8 kv. The G251, G252, and G253 each feature four independently selectable SPST switches with closely matched channel resistance. The G251 is normally closed, while the G252 is normally open. The G253 has two normally open and two normally closed switches. All parts are guaranteed break-before-make operation for use in multiplexer applications. The parts have a guaranteed control logic high of 1.4 V when is 3 V and 1.8 V when is 5 V. Each switch conducts equally well in both directions when on, and each has an input signal range that extends to the supplies. The G251, G252, and G253 are ideal for portable healthcare, instrument, and communication devices. The G251, G252, and G253 are available in wafer level CSP package with top side lamination. The package has a 4 x 4 bump array,.35 mm pitch, and 1.44 mm x 1.44 mm length and width. FEATURES 1.8 V to 5.5 V single supply operation Low leakage, 1 na / max. at 85 C Low switch off capacitance Rail-to-rail signal handling Latch up current > 8 ma (JES78) ES: 8 V/HBM Typical power consumption (<.1 μw) TTL/CMOS compatible Compact WCSP mm x 1.44 mm Material categorization: for definitions of compliance please see APPLICATIONS Analog front end signal switching Sample-and-hold circuits Battery-powered systems Portable meters Automatic test equipment Medical and healthcare equipment Communication systems FUNCTIONAL BLOCK IAGRAM Switches are shown for a Logic Input TRUTH TABLE G251 G252 G253 LOGIC SWITCH LOGIC SWITCH LOGIC SW1, SW4 SW2, SW3 ON OFF OFF ON 1 OFF 1 ON 1 ON OFF S Rev. B, 21-Aug-17 1 ocument Number: 62962

2 ORERING INFORMATION PART NUMBER PACKAGE OUTLINE CONFIGURATION SWITCH FUNCTION TEMPERATURE RANGE PACKAGE REEL QUANTITY G251B-T2-GE1 Quad SPST NC -4 C to +85 C WCSP16, 1.44 mm x 1.44 mm 3 G251B-T4-GE1 Quad SPST NC -4 C to +85 C WCSP16, 1.44 mm x 1.44 mm G252B-T2-GE1 Quad SPST NO -4 C to +85 C WCSP16, 1.44 mm x 1.44 mm 3 G252B-T4-GE1 Quad SPST NO -4 C to +85 C WCSP16, 1.44 mm x 1.44 mm G253B-T2-GE1 Quad SPST NC/NO -4 C to +85 C WCSP16, 1.44 mm x 1.44 mm 3 G253B-T4-GE1 Quad SPST NC/NO -4 C to +85 C WCSP16, 1.44 mm x 1.44 mm A1 A2 A3 3 S3 A4 B1 S2 C1 B2 IN2 C2 B3 IN3 C3 B4 4 C4 Top View (Bump Side own) 2 IN1 IN4 S S1 1 Fig. 1 - Package Outline for WCSP16, 1.44 mm x 1.44 mm,.35 mm Pitch EVICE MARKING A B C Row 1 ot = Pin A1 Locator Row 2 B = Fab, 4 = Year, C = Week Code, A = Lot Code Row = Part Code Fig. 2 - evice Marking ABSOLUTE MAXIMUM RATINGS ELECTRICAL PARAMETERS CONITIONS LIMITS UNIT, INx Reference to -.3 to +6 Sx, x Reference to -.3 to () +.3 V Maximum continuous switch current 5 Maximum peak current ma 2 (Pulsed 1 ms, % duty cycle) Thermal resistance 8 C/W Latch up current JES78 > 8 ma ES - HBM ANSI / ESA / JEEC JS-1 > 8 V Temperature Operating temperature -4 to +85 Storage temperature -65 to +15 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S Rev. B, 21-Aug-17 2 ocument Number: 62962

3 ELECTRICAL CHARACTERISTICS 3 V Supply TEST CONITION -4 C to +85 C PARAMETER SYMBOL UNLESS OTHERWISE SPECIFIE, TEMP. = 3 V TYP. c MIN. d MAX. d UNIT V INH = 1.4 V, V INL =.4 V a Analog Switch Analog signal range e V ANALOG Full - 3 V rain-source on Room R resistance S(on) Full V S = 1.5 V, I S = -1 ma Room.83 - On-resistance matching R on Full = 3.3 V, Room ± Switch off leakage current I S /I (off) V S =.3 V/3 V, V = 3 V /.3 V Full Channel on leakage = 3.3 V, Room ± I current (on) V =.3 V / 3 V Full na igital Control Input, high voltage V INH Full Input, low voltage V INL Full V Input leakage I IN V IN = V or Room ± Full μa igital input capacitance e C IN f = 1 MHz Room pf ynamic Characteristics G253 only, V Break-before make time t S1 = V S2 = 1.5 V, Room 47 - BBM R L = 3 C L = 35 pf Full - - Room Turn-on time t ON ns Full V S = 1.5 V, R L = 3, C L = 35 pf Room 77 - Turn-off time t OFF Full Charge injection e Q INJ C L = 1 nf, R GEN =, V S = 1.5 V Room pc Off isolation e OIRR Room R L = 5, C L = 5 pf, f = 1MHz Cross talk e X Talk Room db 3 db bandwidth e BW R L = 5, C L = 5 pf Room MHz Source off capacitance e C S(off) Room rain off capacitance e C (off) f = 1 MHz, V S = 1.5 V Room pf rain on capacitance e C (on) Room Power Requirements Power supply current I+ igital input or Room Full μa S Rev. B, 21-Aug-17 3 ocument Number: 62962

4 ELECTRICAL CHARACTERISTICS 5 V Supply TEST CONITION -4 C to +85 C PARAMETER SYMBOL UNLESS OTHERWISE SPECIFIE, TEMP. = 5 V TYP. c MIN. d MAX. d UNIT V INH = 1.8 V, V INL =.5 V a Analog Switch Analog signal range e V ANALOG Full - 5 V Room 4-15 rain-source on resistance R S(on) Full V S = 2.5 V, I S = -1 ma Room.39-8 On-resistance matching R on Full - - = 5.5 V, Room ± Switch off leakage current I S /I (off) V S = 1 V/4.5 V, V = 4.5 V/1 V Full Channel on leakage = 5.5 V, Room ± I current (on) V = 4.5 V/1 V Full na igital Control Input, high voltage V INH Full Input, low voltage V INL Full V Input leakage I IN V IN = V or Room ± Full μa igital input capacitance e C IN f = 1 MHz Room pf ynamic Characteristics G253 only, V Break-before make time t S1 = V S2 = 3 V, Room 25 - BBM R L = 3 C L = 35 pf Full - - Room 64 - Turn-on time t ON ns Full V S = 3 V, R L = 3, C L = 35 pf Room 38-6 Turn-off time t OFF Full - - Charge injection e Q INJ C L = 1 nf, R GEN =, V S = 3 V Room pc Off isolation e OIRR Room R L = 5, C L = 5 pf, f = 1MHz Cross talk e X Talk Room db 3 db bandwidth e BW R L = 5, C L = 5 pf Room MHz Source off capacitance e C S(off) Room rain off capacitance e C (off) f = 1 MHz, V S = 3 V Room pf rain on capacitance e C (on) Room Power Requirements Power supply current I+ igital input = 1.8 V, at one channel = 5 V igital input or Room Full Room Full Notes a. V IN = input voltage to perform proper function b. Room = 25 C, Full = as determined by the operating temperature suffix c. Typical values are for ESIGN AI ONLY, not guaranteed nor subject to production testing d. The convention where the most negative value is a minimum and the most positive a maximum, is used in this data sheet e. Guaranteed by design, not subject to production test μa S Rev. B, 21-Aug-17 4 ocument Number: 62962

5 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) R ON - On-Resistance (Ω) = +1.8V = +2.7V = +3.V = +4.5V = +5.V R ON -On-Resistance (Ω) C + 85 C T 5 A = +25 C I S = -1 ma V - Analog Voltage (V) On-Resistance vs. Analog Voltage 9 = +5 V + 25 C I S = -1 ma -4 C V - Analog Voltage (V) On-Resistance vs. Analog Voltage R ON -On-Resistance (Ω) C C C = +3 V I S = -1 ma -4 C V - Analog Voltage (V) On-Resistance vs. Analog Voltage Leakage Current (pa) I (OFF), V = 4.5V,V S =1V, I (ON), V =4.5V I S(OFF) V S = 4.5V,V =1V I (ON), V =1V - I (OFF), V = 1 V, V S = 4.5 V -15 I = V S(OFF), V S = 1 V, V = 4.5 V Temperature ( C) Leakage Current vs. Temperature 5 I (OFF), V = 3V,V S =.3V I (ON), V =3V 5 4 = +5V IN = or Leakage Current (pa) -5 - I S(OFF) V S = 3V,V =.3V I (ON), V =.3V I (OFF), V =.3V,V S =3V I+ - Supply Current (na) 3 2 = +3V IN = or = V I S(OFF) V S =.3V,V =3V Temperature ( C) Leakage Current vs. Temperature Temperature ( C) Supply Current vs. Temperature S Rev. B, 21-Aug-17 5 ocument Number: 62962

6 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) I+ PER LOGIC INPUT = +5 V 3.5 = +5V ONE INPUT = 1.8V OTHER INPUTS = or Temperature ( C) Supply Current vs. Temperature V IN (V) Supply Current vs. V IN I+ PER LOGIC INPUT = +3 V Q INJ - Charge Injection (pc) = 1.8 V = 3 V = 5 V V IN (V) Supply Current vs. V IN V S - Analog Voltage (V) Charge Injection vs. Analog Voltage t ON, t OFF, t BBM - Switching Time (ns) 2 18 = +3 V, t ON = +5 V, t ON = +3 V, t OFF = +3V, t BBM = +5 V, t OFF = +5 V, t BBM Temperature ( C) Switching Time vs. Temperature Loss, OIRR, X TALK (db) K = +5 V R L = 5 Ω OIRR Loss X TALK 1M M M 1G Frequency (Hz) Loss, OIRR, X TALK vs. Frequency S Rev. B, 21-Aug-17 6 ocument Number: 62962

7 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) Loss, OIRR, X TALK (db) = +3 V R L = 5 Ω OIRR Loss X TALK - 1 K 1M M M 1G Frequency (Hz) Loss, OIRR, X TALK vs. Frequency V T - Logic Threshold (V) V IH V IL Supply Voltage (V) Logic Threshold vs. Supply Voltage = +5 V = +3 V K K 1M M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency.1 K K 1M M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency = +5. V One Input = V to +1.8 V 1.1 K K 1M M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency S Rev. B, 21-Aug-17 7 ocument Number: 62962

8 TEST CIRCUIT Logic Input V INH 5 % t r < 5 ns t f < 5 ns Switch Input Logic Input IN S Switch Output R L 3 Ω V OUT C L 35 pf Switch Output V INL V.9 x V OUT t ON t OFF C L (includes fixture and stray capacitance) R V OUT = V L R L + R ON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. Fig. 3 - Switching Time V gen + R gen IN S V OUT C L = 1 nf V OUT IN On V OUT Off On V IN = - Q = V OUT x C L IN depends on switch configuration: input polarity determined by sense of switch. Fig. 4 - Charge Injection nf nf S IN V, 2.4 V R L V, 2.4 V IN S Meter HP4192A Impedance Analyzer or Equivalent Analyzer f = 1 MHz Off Isolation = 2 log V V S Fig. 5 - Off-Isolation Fig. 6 - Channel Off/On Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see S Rev. B, 21-Aug-17 8 ocument Number: 62962

9 Package Information WCSP 4 x 4: 16 Bumps (4 x 4,.35 mm pitch, 172 μm bump height, 1.48 mm x 1.48 mm die size) Index Bump A1 16xØ b 4 C4 B4 A4 s S4 4 FYWL ABC 3 C3 B3 A3 1 IN4 IN3 S3 2 C2 B2 A2 S1 IN1 IN2 3 e e 1 C1 B1 A1 2 S2 s e E s e e e s Top View Bottom View 16 x Ø.15 mm Cu pad Solder mask Ø.25 mm A1 e Note 4 A1 A e e Note 3 Side View Bump Note 2 e e e WG: 622 Recommended Land Pattern (NSM) Notes (1) Laser mark on the silicon die back, coated with an epoxy film (2) Bumps are SAC45 (3).5 max. co-planarity (4) Laminate tape thickness is.22 mm IM. MILLIMETERS a INCHES MIN. NOM. MAX. MIN. NOM. MAX. A A b e s E Note a. Use millimeters as the primary measurement. S Rev. A, 31-Mar-14 1 ocument Number: For technical questions, contact: powerictechsupport@vishay.com

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