FEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number

Size: px
Start display at page:

Download "FEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number"

Transcription

1 Dual SPST Switches DG, DG8, DG9 DESCRIPTION The DG, DG8, and DG9 are low voltage, precision dual SPST switches that can be operated in a single supply or in a dual supply configuration power supply with low power dissipation. The DG, DG8 and DG9 can switch both analog and digital signals within the power supply rail, and conduct well in both directions. Fabricated with advance submicron CMOS process, these switches provide high precision low and flat ON resistance, low leakage current, low parasitic capacitance, and low charge injection. The DG, DG8 and DG9 contain two independent Single Pole Single Throw (SPST) switches. Switch- and switch- are normally open for the DG and normally closed for the DG8. For the DG9, switch- is normally open and switch- is normally closed with a Break-Before-Make switching timing. The DG, DG8 and DG9 are the ideal switches for use in low voltage instruments and healthcare devices, fitting the circuits of low voltage ADC and DAC, analog front end gain control, and signal path control. As a committed partner to the community and the environment, manufactures this product with lead (Pb)-free device termination. As a further sign of 's commitment, the DG, DG8 and D9 are fully RoHS compliant and halogen-free. FEATURES Halogen-free According to IEC 9-- Definition Low and flat switch on resistance,. /typ Low leakage and parasitic capacitance MHz, - db bandwidth Latch-up current > ma (JESD8) Over voltage tolerant TTL/CMOS compatible Compliant to RoHS Directive /9/EC APPLICATIONS Healthcare and medical devices Test instruments Portable meters Data acquisitions Control and automation PDAs and modems Communication systems Audio, video systems Mechanical reed relay replacement FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG, MSOP- DG8, MSOP- DG9, MSOP- NO NC NO COM IN 9 8 IN COM NO COM IN 9 8 IN COM NC COM IN 9 8 IN COM NC Top View TRUTH TABLE (DG, DG8) DG DG8 Switches Logic Off On Top View Top View TRUTH TABLE (DG9) Logic Switch- Switch- Off On On Off ORDERING INFORMATION Temperature Range Package Part Number - C to 8 C Document Number: S--Rev. A, -Aug- MSOP- MSOP- MSOP- DGDQ-T-GE DG8DQ-T-GE DG9DQ-T-GE THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

2 DG, DG8, DG9 ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Referenced to -. to IN, COM, NC, NO a -. to ( +.) V Continuous Current (Any Terminal) ± Peak Current (Pulsed at ms, % duty cycle) ± ma Storage Temperature (D Suffix) - to C Power Dissipation (Packages) b MSOP- c mw Notes: a. Signals on NC, NO, or COM or IN exceeding will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate mw/ C above C. SPECIFICATIONS ( = V, = ) Parameter Analog Switch Analog Signal Range d Symbol Test Conditions Otherwise Unless Specified = V, =, ± %, V IN =. V or. V e Temp. a Limits - C to 8 C Min. b Typ. c Max. b V NO, V NC V COM V On-Resistance =. V, =, V COM = to, I NO, I NC = - ma Flatness d Match d Flatness Match =. V, =, V COM =. V to. V, I NO, I NC = - ma =. V, =, V D =. V to. V, I D = - ma I NO(off) I Switch Off Leakage Current NC(off) =. V, =, V NO, V NC = V/ V, V COM = V/ V I COM(off) =. V, =, Channel-On Leakage Current I COM(on) V NO, V NC = V COM = V/ V Digital Control.. Input High Voltage V INH Input Low Voltage V INL. V Input Capacitance d C in f = MHz. pf Input Current I INL or I INH V IN = or - µa Dynamic Characteristics Turn-On Time t ON V NO or V NC = V, =, C L = pf, figures and Turn-Off Time t OFF ns Charge Injection d Q INJ C L = nf, V GEN =, R GEN =, figure.8 pc Bandwidth d BW = V, =, C L = pf, - db 9 MHz Off-Isolation d OIRR - =, C L = pf, f = MHz Crosstalk d X TALK - 9 Off-Isolation d OIRR - =, C L = pf, f = MHz Crosstalk d X TALK - 9 db Source-Off Capacitance d C NC/NO(off) 8 Drain-Off Capacitance d C COM(off) V IN = or, f = MHz 9 pf Channel-On Capacitance d C ON Power Supply Power Supply Current I+ V IN = or, =. V µa Unit na Document Number: S--Rev. A, -Aug- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

3 DG, DG8, DG9 SPECIFICATIONS ( = V, = ) Parameter Analog Switch Symbol Test Conditions Otherwise Unless Specified = V, =, ± %, V IN =.8 V or. V e Temp. a Limits - C to 8 C Min. b Typ. c Max. b Unit Analog Signal Range d V NO, V NC V COM V On-Resistance =. V, =, V COM = to, I NO, I NC = ma Flatness d Match d Flatness Match =. V, =, V COM =. V to V, I NO, I NC = ma =. V, =, I D = ma, V COM =. V to V I NO(off) I Switch Off Leakage Current NC(off) =. V, =, V NO, V NC = V/. V, V COM =. V/ V I COM(off) =. V, =, Channel-On Leakage Current I COM(on) V NO, V NC = V COM = V/. V Digital Control V IN = or, f = MHz Input High Voltage V INH. Input Low Voltage V INL.8 V Input Capacitance C in f = MHz. pf Input Current I INL or I INH V IN = or -... µa Dynamic Characteristics Turn-On Time d t ON V NO or V NC = V, =, C L = pf, figures and Turn-Off Time d t 9 OFF ns Charge Injection d Q INJ C L = nf, V GEN =, R GEN =, figure. pc Bandwidth d BW = V, =, C L = pf, - db MHz Off-Isolation d OIRR - =, C L = pf, f = MHz Crosstalk d X TALK - 9 Off-Isolation d OIRR - =, C L = pf, f = MHz Crosstalk d X TALK - 9 db Source-Off Capacitance d C NC/NO(off) 8 Drain-Off Capacitance d C COM(off) 9 pf Channel-On Capacitance d C ON Power Supply Power Supply Range.. V Power Supply Current I+ V IN = or, =. V µa na Document Number: S--Rev. A, -Aug- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

4 DG, DG8, DG9 SPECIFICATIONS ( = +. V, = -. V) Parameter Analog Switch Symbol Test Conditions Otherwise Unless Specified = +. V, = -. V, ± %, V IN =.8 V or. V e Temp. a Limits - C to 8 C Min. b Typ. c Max. b Unit Analog Signal Range V NO, V NC V COM V On-Resistance = +. V, = -. V, V COM = to, I NO, I NC = ma Flatness Match Flatness Match = +. V, = -. V, V COM = ±. V,, I NO, I NC = ma = +. V, = -. V, V COM = ±. V, I NO, I NC = ma I NO(off) I Switch Off Leakage Current NC(off) = +. V, = -. V, = ±. V, V D = ±. V I COM(off) = +. V, = -. V, Switch on Leakage I COM(on) = V D = ±. V Digital Control Notes: a. = C, = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. V IN = input voltage to perform proper function. f. Not production tested Input High Voltage V INH. Input Low Voltage V INL.8 V Input Capacitance C in f = MHz. pf Input Current I INL or I INH V IN = or -.. µa Dynamic Characteristics Turn-On Time d t ON V NO or V NC = V, =, C L = pf Turn-Off Time d t OFF ns Charge Injection d Q INJ C L = nf, V GEN =, R GEN =. pc V IN = or, f = MHz Bandwidth d BW = +. V, = -. V, =, C L = pf, - db MHz Off-Isolation d OIRR = +. V, = -. V, - Crosstalk d X TALK =, C L = pf, - db, f = MHz - 9 Off-Isolation d OIRR = +. V, = -. V, - db Crosstalk d X TALK =, C L = pf, - db, f = MHz - 9 Source-Off Capacitance d C NC/NO(off) Drain-Off Capacitance d C COM(off) pf Channel-On Capacitance d C ON Power Supply Power Supply Range.. V Power Supply I+ V IN = or, =. V µa na Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: S--Rev. A, -Aug- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

5 TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted) DG, DG8, DG9 - On-Resistance (Ω) =.8 V =. V T = C INO/NC = - ma =. V =. =. V =. V =. =. V - On-Resistance (Ω) 9 8 =. V INO/NC = - ma + C + 8 C - C V D - Analog Voltage (V) V D - Analog Voltage (V) vs. V D and Single Supply Voltage vs. Analog Voltage and Temperature... =. V INO/NC = - ma + C + 8 C + 8 C V = ±. V IN O /N C = - ma - On-Resistance (Ω) C - On-Resistance (Ω) + C - C V D - Analog Voltage (V) vs. Analog Voltage and Temperature V COM - Analog Voltage (V) vs. Analog Voltage and Temperature ma Leakage Current (pa) =. V I COM(ON) I COM(OFF) I+ - Supply Current (A) ma µa µa µa na na =. V =. =. V =. I NO(OFF) na =.8 V Temperature ( C) Leakage Current vs. Temperature pa K K K M M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Document Number: S--Rev. A, -Aug- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

6 DG, DG8, DG9 TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted) V T - Switching Threshold (V)....9 V IH.8.. V IL Supply Voltage (V) Switching Threshold vs. Supplz Voltage Crosstalk (db) Frequency (MHz) Crosstalk vs. Frequency Loss (db) Frequency (MHz) Insertion Loss vs. Frequency Off Isolation (db) Frequency (MHz) Off Isolation vs. Frequency TEST CIRCUITS + V = V S D Logic Input V % t r < ns t f < ns V IN = V IN C L pf Switch Input Switch Output 9 % t OFF = + R DS(on) t ON Figure. Single Supply Switching Time Document Number: S--Rev. A, -Aug- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

7 DG, DG8, DG9 TEST CIRCUITS +. V V IN = V = V S IN D -. V = + R DS(on) C L pf Logic Input Switch Input Switch Output V % t ON 9 % t OFF t r < ns t f < ns Figure. Dual Supply Switching Time + V R g S D V g V IN C L pf IN X ON OFF ON = measured voltage error due to charge injection The charge injection in coulombs is Q = C L x Figure. Charge Injection + V C S D nf V R g = V IN = / V IN C,. V IN COM NC or NO Meter HP9A Impedance Analyzer or Equivalent f = MHz nf Off Isolation = log Figure. Off-Isolation Figure. Channel Off/On Capacitance Document Number: S--Rev. A, -Aug- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

8 DG, DG8, DG9 Vishay Semiconductors TEST CIRCUITS C + V S D R g = Ω IN Ω V IN = / V NC S D V IN = / V IN C X TALK = log C = RF bypass Figure. Channel to Channel Crosstalk maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?. 8 Document Number: S--Rev. A, -Aug- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

9 Package Information MSOP: LEADS JEDEC Part Number: MO-8, (Variation AA and BA) (N/) Tips) N N- A B C X. E..8 Max Detail B (Scale: /) Dambar Protrusion.. N/ Top View b.8 M C B S A S b e See Detail B e A With Plating c c BSC Parting Line L Detail A (Scale: /) NOTES:. Die thickness allowable is.... Dimensioning and tolerances per ANSI.Y.M-99.. Dimensions D and E do not include mold flash or protrusions, and are measured at Datum plane -H-, mold flash or protrusions shall not exceed. mm per side.. Dimension is the length of terminal for soldering to a substrate.. Terminal positions are shown for reference only.. Formed leads shall be planar with respect to one another within. mm at seating plane.. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be.8 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be. mm. See detail B and Section C-C. 8. Section C-C to be determined at. mm to mm from the lead tip. 9. Controlling dimension: millimeters. D Side View.9. This part is compliant with JEDEC registration MO-8, variation AA and BA.. Datums -A- and -B- to be determined Datum plane -H-.. Exposed pad area in bottom side is the same as teh leadframe pad size. A. R. Min Places Seating Plane. C Seating Plane Base Metal See Detail A A. S Section C-C Scale: / (See Note 8) ς E End View N = L MILLIMETERS Dim Min Nom Max Note A - -. A... A..8.9 b b... 8 c. -. c...8 D. BSC E.9 BSC E.9.. e. BSC e. BSC L... N ECN: T-8 Rev. C, -Jul- DWG: 8 C C -H- -A- -C- -B- Document Number: -Jul-

10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb- Document Number: 9

FEATURES DG721, TDFN-8 COM 2 7 IN 1 NO 1 1 NO 2. Top View. Device Marking for MSOP-8: 721

FEATURES DG721, TDFN-8 COM 2 7 IN 1 NO 1 1 NO 2. Top View. Device Marking for MSOP-8: 721 .8 V to. V, Dual SPST Switches DG, DG, DG DESCRIPTION The DG, DG and DG are precision dual SPST switches designed to operate from single.8 V to. V power supply with low power dissipation. The DG, DG and

More information

DG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS

DG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS DG275, DG276 Low-Voltage, 0.4 R ON, Single SPST Analog Switch DESCRIPTION The DG275, DG276 are low voltage, single supply, dual SPST analog switches. Designed for high performance switching of analog signals,

More information

Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability

Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability DG6, DG63 DESCRIPTION The DG6, DG63 is a low on-resistance, single-pole/ double-throw monolithic CMOS analog switch with negative

More information

0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch

0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch .4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch DESCRIPTION The DG2523 and DG2524 are four-channel single-pole double-throw (SPDT) analog switches. The DG2523 has two control inputs

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG9411 DESCRIPTION The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low

More information

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Power-off Protection,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single

More information

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DG9E High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DESCRIPTION The DG9E is monolithic CMOS dual single-pole / double-throw (SPDT) analog switches. It is specifically designed for low-voltage,

More information

Low Voltage, Dual SPDT Analog Switch with Charge Pump

Low Voltage, Dual SPDT Analog Switch with Charge Pump Low Voltage, Dual SPDT Analog Switch with Charge Pump DG, DG, DG DESCRIPTION The DG, DG, DG are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch DG27B High-Speed Quad Monolithic SPST CMOS Analog Switch DESCRIPTION The DG27B high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage

More information

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Power-off Isolation,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single

More information

FEATURES APPLICATIONS

FEATURES APPLICATIONS .7, Low On Resistance, + V, +5 V, +3 V, ± 5 V, SPST Switches DESCRIPTION The DG9E and DG9E are monolithic single-pole-single-throw (SPST) analog switches. The DG9E has a normally closed function. The DG9E

More information

Dual SPDT Analog Switch

Dual SPDT Analog Switch Dual SPDT Analog Switch DESCRIPTION The DG9236 is a CMOS, dual SPDT analog switch designed to operate from = 2.7 V to = 6 V max. operating, single supply. All control logic inputs have a guaranteed.8 V

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,

More information

FEATURES BENEFITS APPLICATIONS. PARAMETER LIMIT UNIT Reference to GND V to +6 IN, COM, NC, NO a -0.3 to (V )

FEATURES BENEFITS APPLICATIONS. PARAMETER LIMIT UNIT Reference to GND V to +6 IN, COM, NC, NO a -0.3 to (V ) DESCRIPTION www.vishay.com.5, High Bandwidth, Dual SPDT Analog Switch The DGE is a low-voltage dual single-pole / double-throw monolithic CMOS analog switch. Designed to operate from. V to 5.5 V power

More information

DG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix.

DG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix. 1.5 On Resistance, ± 15 / +12 / ± 5, Quad SPST Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix

More information

Improved Quad CMOS Analog Switches

Improved Quad CMOS Analog Switches Improved Quad CMOS Analog Switches DESCRIPTION The analog switches are highly improved versions of the industry-standard DG2A, DG22. These devices are fabricated in proprietary silicon gate CMOS process,

More information

DG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS

DG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS 0.35-Ω Low-Voltage Dual SPDT Analog Switch DG2535/DG2536 DESCRIPTION The DG2535/DG2536 is a sub Ω (0.35 Ω at 2.7 V) dual SPDT analog switches designed for low voltage applications. The DG2535/DG2536 has

More information

Precision Monolithic Quad SPST CMOS Analog Switches

Precision Monolithic Quad SPST CMOS Analog Switches Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix

More information

3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers

3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers DG148E, DG149E 3.9, 8-Channel / Dual 4-Channel, ± 15, +12, ± 5 Precision Multiplexers DESCRIPTION The DG148E is a precision analog multiplexer comprising eight single-ended channels. The DG149E is a dual

More information

DG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS

DG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch DESCRIPTION The DG2706 is a high speed, low voltage, low On-resistance, quad SPDT (single pole double throw) analog switch. It operates from a.6

More information

Precision Quad SPDT Analog Switch

Precision Quad SPDT Analog Switch Precision Quad SPDT Analog Switch DESCRIPTION The consist of four independently controlled single-pole double-throw analog switches. These monolithic switch is designed to control analog signals with a

More information

0.45, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability

0.45, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability 5, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability DESCRIPTION The is a dual SPDT low on-resistance switch designed to from a single 1.6 V to 5.5 V power supply. It is a bi-directional

More information

Low-Voltage Single-Supply, SPDT Analog Switch in SC-70

Low-Voltage Single-Supply, SPDT Analog Switch in SC-70 Low-oltage Single-Supply, SPDT Analog Switch in SC-7 DESCRIPTION The DG499 is a cost effective upgrade to other types of 499 low-voltage, single-pole/double-throw analog switches available in the industry

More information

Monolithic Dual SPST CMOS Analog Switch

Monolithic Dual SPST CMOS Analog Switch Monolithic Dual SPST CMOS Analog Switch DG00B DESCRIPTION The DG00B is a dual, single-pole, single-throw analog switch designed to provide general purpose switching of analog signals. This device is ideally

More information

0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch

0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch .39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch DESCRIPTION The is a compact, low resistance, ultra-low distortion double pole double throw (DPST) analog switch. The features a flat.39

More information

700 MHz, -3 db Bandwidth; Single SPDT Analog Switch

700 MHz, -3 db Bandwidth; Single SPDT Analog Switch 7 MHz, -3 db Bandwidth; Single SPDT Analog Switch DESCRIPTION is a low R ON, high bandwidth analog switch configured in single SPDT. It achieves 5 switch on resistance, greater than 7 MHz -3 db bandwidth

More information

Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection

Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection New Product DG/DG1 Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection DESCRIPTION The DG/DG1 are low-voltage single single-pole/ double-throw monolithic CMOS analog switches. Designed

More information

Low Power, High Voltage SPST Analog Switches

Low Power, High Voltage SPST Analog Switches Low Power, High Voltage SPST Analog Switches DG67, DG68 DESCRIPTION The DG67 and DG68 are dual supply single-pole/singlethrow (SPST) switches. On resistance is max. and flatness is 2 max. over the specified

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch High-Speed Quad Monolithic SPST CMOS Analog FEATURES BENEFITS APPLICATIONS Fast ing : 55 ns Low Charge Injection: 5 pc Low r DS(on) : 3 TTL/CMOS Compatible Low Leakage: pa Fast Settling Times Reduced ing

More information

0.3 pc Charge Injection, 100 pa Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch

0.3 pc Charge Injection, 100 pa Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch 0.3 pc Charge Injection, pa Leakage CMOS ± 5 / 5 / 3 Dual SPDT Analog Switch DESCRIPTION The is a dual SPDT CMOS, analog switch, designed to operate from a +3 to +16 single supply, or from ± 3 to ± 8,

More information

Automotive 125 C Analog Switch Dual DPDT / Quad SPDT, 0.37, 338 MHz Bandwidth

Automotive 125 C Analog Switch Dual DPDT / Quad SPDT, 0.37, 338 MHz Bandwidth Automotive 125 C Analog Switch Dual DPDT / Quad SPDT, 0.37, 338 MHz Bandwidth DESCRIPTION The, is a four-channel single-pole double-throw (SPDT) analog switch with two control inputs. It is also known

More information

FEATURES APPLICATIONS. Switches are shown for a Logic 0 Input

FEATURES APPLICATIONS. Switches are shown for a Logic 0 Input 2, Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches ESCRIPTION The G251, G252, and G253 are monolithic quad single-pole single-throw (SPST) analog switches that operate from

More information

Precision Monolithic Quad SPST CMOS Analog Switches

Precision Monolithic Quad SPST CMOS Analog Switches Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The DG4 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining

More information

DG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS

DG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS High-Speed, Low r ON, SPDT Analog Switch (2:1 Multiplexer) DG2307 DESCRIPTION The DG2307 is a single-pole-double-throw switch/2:1 mux designed for 2 to 5.5 V applications. Using proprietary sub-micro CMOS

More information

0.5 pc Charge Injection, 100 pa Leakage, Dual SPDT Analog Switch

0.5 pc Charge Injection, 100 pa Leakage, Dual SPDT Analog Switch 0.5 pc Charge Injection, pa Leakage, Dual SPDT Analog Switch DESCRIPTION The is an analog CMOS, dual SPDT switch, designed to operate from a +2.7 V to +12 V single supply or from ± 2.7 V to ± 5 V, dual

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET Si3DDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) Max. I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES Halogen-free According to IEC 69-- Definition TrenchFET

More information

P-Channel 8 V (D-S) MOSFET

P-Channel 8 V (D-S) MOSFET Si9DS P-Channel 8 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 8. at V GS = - 4.5 V - 6 e.6 at V GS = -.5 V - 6 e.48 at V GS = -.8 V - 5.9.68 at V GS = -.5 V - 5.

More information

Dual P-Channel 20 V (D-S) MOSFET

Dual P-Channel 20 V (D-S) MOSFET Si3CX Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).756 at V GS = -.5 V -.35 -.38 at V GS = -.5 V -.35. at V GS = -.8 V -. nc. at V GS = -.5 V -.5 FEATURES Halogen-free

More information

Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant

More information

Complementary N- and P-Channel 20 V (D-S) MOSFET

Complementary N- and P-Channel 20 V (D-S) MOSFET Complementary N- and P-Channel V (D-S) MOSFET Si6X PRODUCT SUMMARY V DS (V) ( ) I D (ma).7 at V GS =. V 6 N-Channel.8 at V GS =. V. at V GS =.8 V. at V GS = -. V - P-Channel -.6 at V GS = -. V -.7 at V

More information

Dual P-Channel 30-V (D-S) MOSFET

Dual P-Channel 30-V (D-S) MOSFET Dual P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = - V - 7. - 3.4 at V GS = - 4.5 V - 5.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power

More information

Dual P-Channel 12-V (D-S) MOSFET

Dual P-Channel 12-V (D-S) MOSFET Dual P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -. at V GS = -.5 V -.5 a.5 nc. at V GS = -.5 V -.5 a. at V GS = -.8 V - 3.5 PowerPAK SC-7- Dual FEATURES Halogen-free

More information

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET Si33DS P-Channel 0-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.039 at V GS = - 4.5 V - 4.7-0 0.05 at V GS = -.5 V - 4. 0.068 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to

More information

Dual P-Channel 60-V (D-S) 175 MOSFET

Dual P-Channel 60-V (D-S) 175 MOSFET Dual P-Channel 6-V (D-S) 75 MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).2 at V GS = - V - 3. - 6.5 at V GS = - 4.5 V - 2.8 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET

More information

Dual P-Channel 30 V (D-S) MOSFET

Dual P-Channel 30 V (D-S) MOSFET SiA95DJ Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) - 3.87 at V GS = - V -.5 a 3. nc.5 at V GS = -.5 V -.5 a PowerPAK SC-7- Dual FEATURES Halogen-free According

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET Si6BDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ).5 at V GS = V 4.5.8 at V GS = 4.5 V.4.6 nc FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power

More information

N- and P-Channel 30 V (D-S) MOSFET

N- and P-Channel 30 V (D-S) MOSFET N- and P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.47 at V GS = V 6..65 at V GS = 4.5 V 5.2 2.75 P-Channel - 3.89 at V GS = - V - 4.3.4 at V GS = -

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET Si3CDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES TrenchFET Power MOSFET Material categorization: For definitions

More information

N-Channel 40 V (D-S) MOSFET

N-Channel 40 V (D-S) MOSFET N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) 4.5 at V GS = V 4.3.54 at V GS = 4.5 V 4..7 at V GS =.5 V 3.6 G S TO-36 (SOT-3) 3 D 3.8 nc FEATURES TrenchFET

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si33CDS P-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) -.39 at V GS = -4.5 V -6 e.5 at V GS = -.5 V -5.8.63 at V GS = -.8 V -5. TO-36 (SOT-3) 9 nc FEATURES TrenchFET

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) - 2.32 at V GS = - 4.5 V - 5.9.4 at V GS = - 2.5 V - 5.2.675 at V GS = -.8 V - 4.3 G TO-236 (SOT-23) 3.8 nc FEATURES

More information

Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET Si99CDY Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V nc SO- FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET N7K N-Channel 6-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 6 at V GS = V G S T O-6 SOT - Top View N7K (7K)* * Marking Code Ordering Information: N7K-T N7K-T-E (Lead (Pb)-free) N7K-T-GE

More information

Dual P-Channel 40 V (D-S) MOSFET

Dual P-Channel 40 V (D-S) MOSFET Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) d Q g (Typ.) -.27 at V GS = - V - 8.3 at V GS = -.5 V - 7.2 2.7 nc SO-8 S 8 D G 2 7 D S 2 3 D 2 G 2 5 D 2 FEATURES Halogen-free

More information

N-Channel 60 V (D-S), MOSFET

N-Channel 60 V (D-S), MOSFET N-Channel 6 V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).3 at V GS = V 9. 6 6.5 nc.45 at V GS = 4.5 V 7.6 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According

More information

P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET Si3443BDV P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.060 at V GS = - 4.5 V - 4.7-0 0.090 at V GS = -.7 V - 3.8 0.00 at V GS = -.5 V - 3.7 FEATURES Halogen-free According

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-

More information

DG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES

DG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES High-Speed, Low r ON, SPDT Analog Switch (2:1 Multiplexer/Demultiplexer Bus Switch) DG3157 DESCRIPTION The DG3157 is a high-speed single-pole double-throw, low power, TTL-Compatible bus switch. Using sub-micro

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 60 V (D-S) MOSFET N700K Marking code: 7K D 3 SOT-3 (TO-36) G Top View PRODUCT SUMMARY V DS (V) 60 R DS(on) max. ( ) at V GS = 0 V Q g typ. (nc) 0.4 I D (ma) 300 Configuration Single S FEATURES

More information

P-Channel 12 V (D-S) MOSFET

P-Channel 12 V (D-S) MOSFET Si333DDS P-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.).8 at V GS = - 4.5 V - 6 e.3 at V GS = - 3.7 V - 6 e -.4 at V GS = -.5 V - 6 e 9 nc.63 at V GS =

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET Si36BDS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).7 at V GS = V. 3 3..65 at V GS =.5 V 3.5 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g

More information

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Si468DY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) Channel- 3 Channel-2 3.7 at V GS = V 8..95 at V GS = 4.5 V 7.5. at V GS = V 5.2.5

More information

Load Switch with Level-Shift

Load Switch with Level-Shift SiX Load Switch with Level-Shift PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A).5 at V IN =.5 V ±.3.8 to 8.89 at V IN =.5 V ±.3.5 at V IN =.8 V ±.3 SiX, 3 S D Q FEATURES Halogen-free According to IEC 9--

More information

Dual P-Channel 12-V (D-S) MOSFET

Dual P-Channel 12-V (D-S) MOSFET New Product Dual P-Channel -V (D-S) MOSFET SiA93ADJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -.8 at V GS = -.5 V -.5 a 8. nc. at V GS = -.5 V -.5 a.5 at V GS = -.8 V -.5 a PowerPAK SC-7-

More information

N- and P-Channel 30-V (D-S) MOSFET

N- and P-Channel 30-V (D-S) MOSFET Si355DV N- and P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel 3.5 at V GS = V.5.75 at V GS =.5 V. P-Channel - 3. at V GS = - V -..3 at V GS = -.5 V -. FEATURES Halogen-free

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET Si3440DV N-Channel 50-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 50 0.375 at V GS = 0 V.5 0.400 at V GS = 6.0 V.4 TSOP-6 Top View FEATURES Halogen-free According to IEC 649-- Definition

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition

More information

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Si483CDY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) Channel- 3 Channel-2 3.2 at V GS = V 8..25 at V GS = 4.5 V 8..2 at V GS = V 8..25

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET Si369DS P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) - 3.9 at V GS = - V - 7.6.34 at V GS = - 6 V - 7.4 at V GS = - 4.5 V - 6.5 G TO-36 (SOT-3) 3 D.4 nc FEATURES

More information

Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET New Product Dual P-Channel 2-V (D-S) MOSFET Si9933CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = -.5 V - - 2 8.9 at V GS = - 2.5 V - FEATURES Halogen-free Option Available

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si8DS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A).5 at V GS = V.5 FEATURES Halogen-free According to IEC 649-- Definition % R g and UIS Tested TrenchFET Power MOSFET Compliant

More information

Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET New Product Dual P-Channel 2-V (D-S) MOSFET Si93CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) - 2.92 at V GS = - V - 8.33 at V GS = -.5 V - 8 2 SO-8 S 8 D G 2 7 D FEATURES Halogen-free

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested

More information

Complementary N- and P-Channel 20 V (D-S) MOSFET

Complementary N- and P-Channel 20 V (D-S) MOSFET Complementary N- and P-Channel V (D-S) MOSFET Si6CX PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).396 at V GS =.5 V.5 N-Channel.56 at V GS =.5 V..56 at V GS =.8 V..75 nc.76 at V GS =.5 V.5.756

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel 5 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) MAX. I D (A) a Q g (TYP.) 5.77 at V GS = V 7.7.85 at V GS = 7.5 V 7.6.25 at V GS = 6 V 4 PowerPAK SC-7-6L Single 4.3 nc 2 D 3 D G Top View

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Si9DV Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).58 at V GS = V.7.7 at V GS =.5 V. TSOP-6 Top View.8 nc FEATURES Halogen-free According to IEC 69-- Definition

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 30-V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 0.90 at V GS = - 0 V -.7-30 0.330 at V GS = - 4.5 V -. nc FEATURES Halogen-free According to IEC 649-- Available

More information

N- and P-Channel 60-V (D-S), 175 C MOSFET

N- and P-Channel 60-V (D-S), 175 C MOSFET N- and P-Channel -V (D-S), 75 C MOSFET Si4559EY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel.55 at V GS = V ± 4.5.75 at V GS = 4.5 V ± 3.9 P-Channel -.2 at V GS = - V ± 3..5 at V GS = - 4.5

More information

Dual 2 A, 1.2 V, Slew Rate Controlled Load Switch

Dual 2 A, 1.2 V, Slew Rate Controlled Load Switch Dual 2 A,.2 V, Slew Rate Controlled Load Switch DESCRIPTION SiP3243, SiP3244 and SiP3246 are slew rate controlled load switches that is designed for. V to 5.5 V operation. The devices guarantee low switch

More information

Dual N-Channel 20 V (D-S) MOSFET

Dual N-Channel 20 V (D-S) MOSFET Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).35 at V GS = 4.5 V..36 at V GS =.5 V SOT-363 SC-7 (6-LEADS).9 FEATURES Halogen-free According to IEC 649-- Definition

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 60 V (D-S) 75 C MOSFET SQ309ES PRODUCT SUMMARY V DS (V) - 60 R DS(on) ( ) at V GS = - 0 V 0.335 R DS(on) ( ) at V GS = - 4.5 V 0.500 I D (A) -.7 Configuration Single FEATURES Halogen-free

More information

P-Channel 100-V (D-S) 175 C MOSFET

P-Channel 100-V (D-S) 175 C MOSFET P-Channel -V (D-S) 75 C MOSFET SUD5P-43L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).43 at V GS = - V - 37-54 nc.48 at V GS = - 4.5 V - 35 FEATURES TrenchFET Power MOSFET Compliant to RoHS

More information

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 4 R DS(on) ( ) at V GS = V.35 R DS(on) ( ) at V GS = 4.5 V.48 I D (A) 8 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q

More information

N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET Si4EDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = 4.5 V 4.9.4 at V GS =.5 V 4.4.5 at V GS =.8 V.9 FEATURES Halogen-free According to IEC 649-- Available TrenchFET

More information

P-Channel 8 V (D-S) MOSFET

P-Channel 8 V (D-S) MOSFET Si35CDS P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 8.35 at V GS = - 4.5 V - 5.8.48 at V GS = -.5 V - 5..65 at V GS = -.8 V - 4.3 TO-36 (SOT-3) nc FEATURES Halogen-free

More information

Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET New Product Dual N-Channel -V (D-S) MOSFET SiA9EDJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =. V.. at V GS =. V.. nc PowerPAK SC-7- Dual FEATURES Halogen-free According to IEC

More information

P-Channel 1.8 V (G-S) MOSFET

P-Channel 1.8 V (G-S) MOSFET Si7DL P-Channel. V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).9 at V GS = -.5 V ±.9 -.5 at V GS = -.5 V ±.7.5 at V GS = -. V ±. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET

More information

Dual N-Channel 30 V (D-S) MOSFETs

Dual N-Channel 30 V (D-S) MOSFETs Dual N-Channel 3 V (D-S) MOSFETs PRODUCT SUMMARY Channel- 3 Channel-2 3 V DS (V) R DS(on) ( ) (Max.) I D (A) Q g (Typ.).2 at V GS = V 6 a 6.8 nc.5 at V GS =.5 V 6 a.37 at V GS = V 28 a 32 nc.5 at V GS

More information

N- and P-Channel 30-V (D-S) MOSFET

N- and P-Channel 30-V (D-S) MOSFET N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET New Product P-Channel 60-V (D-S) MOSFET Si309CDS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 60 0.345 at V GS = - 0 V -.6 0.450 at V GS = - 4.5 V -.4 TO-36 (SOT-3).7 nc FEATURES Halogen-free

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) Q g (Typ.).8 at V GS = 1 V 46.5 6.1 at V GS = 6 V 41.6 9.3 nc.125 at V GS = 4.5 V 37.2 PowerPAK SO-8L 6.15 mm D 5.13 mm FEATURES

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si9DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 5 D FEATURES

More information

Dual N-Channel 25 V (D-S) MOSFETs

Dual N-Channel 25 V (D-S) MOSFETs Dual N-Channel 25 V (D-S) MOSFETs 3 mm mm Top View PRODUCT SUMMARY PowerPAIR 3 x 3 3 mm D Bottom View CHANNEL- CHANNEL-2 V DS (V) 25 25 R DS(on) max. ( ) at V GS = V.83.424 R DS(on) max. ( ) at V GS =

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET New Product P-Channel 3-V (D-S) MOSFET Si357CDV PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).7 at V GS = - V - 5. - 3.3 at V GS = -.5 V -. 5. nc FEATURES Halogen-free According to IEC 69--

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V 7.5 3.3 at V GS = 4.5 V 6.5 FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power MOSFET PWM

More information

P-Channel 30-V (D-S), MOSFET

P-Channel 30-V (D-S), MOSFET SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to

More information