Low-Voltage Single-Supply, SPDT Analog Switch in SC-70

Size: px
Start display at page:

Download "Low-Voltage Single-Supply, SPDT Analog Switch in SC-70"

Transcription

1 Low-oltage Single-Supply, SPDT Analog Switch in SC-7 DESCRIPTION The DG499 is a cost effective upgrade to other types of 499 low-voltage, single-pole/double-throw analog switches available in the industry today. Combining low power, high speed, low on-resistant and small physical size, the DG499 is ideal for portable and battery powered applications. The DG499 is built on s low voltage CMOS process. An epitaxial layer prevents latchup. Break-before - make is guaranteed for DG499. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FEATURES 6-Pin SC-7 Package 6 Ω Max. (26 Typ.) On-Resistance 2 Ω Typ. R ON Flatness Fast Switching: t ON = 3 ns (Max.) t OFF = 2 ns (Max.) 2.2 to. Single Supply Operation Break-Before-Make Switching TTL/CMOS-Logic Compatible BENEFITS Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space APPLICATIONS Battery-Operated Equipment Audio and ideo Signal Routing Cellular Phones Low-oltage Data-Acquistion Systems Sample-and-Hold Circuits Communications Systems Pb-free Available RoHS* PLIANT FUNCTIONAL BLOCK DIAGRAM AND P CONFIGURATION SC Top iew Device Marking: 4J NO (Source ) NC (Source 2 ) TRUTH TABLE Logic NC NO ON OFF OFF ON Logic "".8 Logic "" 2.4 ORDERG FORMATION Temp Range Package Part Number - 4 to 8 C SC7-6 DG499DL-T DG499DL-T-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply

2 ABSOLUTE MAXIMUM RATGS Parameter Limit Unit Referenced to -.3 to + 6,, NC, NO a -.3 to ( +.3) Continuous Current (Any Terminal) ± Peak Current (Pulsed at ms, % duty cycle) ± 2 ma Storage Temperature (D Suffix) - 6 to 2 C Power Dissipation (Packages) b 6-Pin SO7 c 2 mw Notes: a. Signals on NC, NO, or or exceeding will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6. mw/ C above 2 C. SPECIFICATIONS ( = ) Parameter Analog Switch Symbol Test Conditions Otherwise Unless Specified =, ± %, =.8 or 2.4 e Temp a Limits - 4 to 8 C Min b Typ c Max b Unit Analog Signal Range d NO, NC Drain-Source On-Resistance r DS(on) = 4., D = 3, I S = ma r DS(on) Flatness d Switch Off Leakage Current r DS(on) Flatness I S(off) I D(off) = 2. 2 =. S = /4., D = 4. / Channel-On Leakage Current I D(on) =., S = D = /4. Digital Control Input High oltage H 2.4 Input Low oltage L.8 Input Capacitance C in 3 pf Input Current I L or I H = or - µa Dynamic Characteristics Turn-On Time d t 9 3 ON 4 D or S = 3, R L = 3 Ω, C L = 3 pf ns Turn-Off Time d t 2 OFF Figures and 2 3 Break-Before-Make Time d t d 4 Charge Injection d C Q L = nf, S = J GEN =, R GEN = Ω, Figure 3 pc Off-Isolation d OIRR - 73 R L = Ω, C L = pf, f = MHz Crosstalk d X TALK - 7 db Source-Off Capacitance d C S(off) 7 Channel-On Capacitance d C D(on) = or, f = MHz 2 pf Drain-to-Source Capacitance d C DS(off) 2 Power Supply Power Supply Range 4.. Power Supply Current I+.. µa = or Power Consumption P C. µw Ω na 2

3 SPECIFICATIONS ( = 3 ) Parameter Analog Switch Symbol Test Conditions Otherwise Unless Specified = 3, ± %, =.4 or 2. e Temp a Limits - 4 to 8 C Min b Typ c Max b Unit Analog Signal Range d NO, NC Drain-Source On-Resistance d r DS(on) = 2.7, D =., I S = ma 9 9 r DS(on) Flatness d r DS(on) Flatness S = to, I S = ma 7. Ω Digital Control Input High oltage H 2 Input Low oltage L.8 Input Current I L or I H = or - µa Dynamic Characteristics Turn-On Time d t 2 4 ON D or S = 2., R L = 3 Ω, C L = 3 pf ns Turn-Off Time d t 6 3 OFF Figures and 2 4 Break-Before-Make Time d t d 7 Charge Injection d C Q L = nf, GEN =, S = J R GEN = Ω, Figure 3 pc Power Supply Power Supply Range Power Supply Current I+.. µa = or Power Consumption P C 3.3 µw 3

4 SPECIFICATIONS ( = 2. ) Parameter Analog Switch Symbol Test Conditions Otherwise Unless Specified = 2., ± %, =.4 or 2. e Temp a Limits - 4 to 8 C Min b Typ c Max b Unit Analog Signal Range d NO, NC Drain-Source On-Resistance r DS(on) = 2.2, D =., I S = ma 26 d 29 r DS(on) Flatness d r DS(on) Flatness = 2. Digital Control Input High oltage H 2 Input Low oltage L.4 Input Current I L or I H = or - µa Dynamic Characteristics Turn-On Time t 6 ON d 6 D or S =., R L = 3 Ω, C L = 3 pf ns Turn-Off Time t 7 3 OFF Figures and 2 d 4 Break-Before-Make Time t d 2 Power Supply Power Supply Range Power Supply Current d I+.. µa = or Power Consumption P C 2.7 µw Notes: a. = 2 C, = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. = input voltage to perform proper function. f. Guaranteed by leakage testing, not production tested. 2 Ω Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 4

5 TYPICAL CHARACTERISTICS 2 C, unless otherwise noted 3 3 r DS(on) - Drain-Source On-Resistance ( Ω) 2 = 2. 2 = 3 = D - Analog oltage () r DS(on) vs. Analog and Power oltage r DS(on) - Drain-Source On-Resistance ( Ω) 2 2 = 2. = - 4 C 8 C 2 C - 4 C 2 C 8 C D - Analog oltage () r DS(on) vs. Analog oltage and Temperature = = ma ma I+ - Supply Current (na). I+ - Supply Current (na) µa µa µa pa pa pa K K K M M Temperature ( C) Supply Current vs. Temperature Input SwitchingFrequency (Hz) Supply Current vs. Input Switching Frequency Leakage Current (pa) K K K = D, S = I D(off) I D(on) Leakage Current (pa) I D(off) = I D(on) I S(off) Temperature ( C) Leakage Current vs. Temperature D, S - Analog oltage () Leakage vs. Analog oltage

6 TYPICAL CHARACTERISTICS 2 C, unless otherwise noted 2 t ON t ON, t OFF - Switching Time (ns) 2 t OFF 2 C 8 C - 4 C 2 C 8 C - 4 C OIRR, X TALK (db) = 3 R L = Ω Crosstalk Off Isolation K K M M M - Supply oltage () Switching Time vs. Temperature and Supply oltage Frequency (Hz) Crosstalk and Off Isolation vs. Frequency = 3 R L = Ω T - Threshold oltage () 2... Insertion Loss (db) Supply oltage () Input Switching Threshold vs. Supply oltage - 6 K K K M M M G Frequency (Hz) Insertion Loss vs. Frequency 6 C L = nf Charge Injection (pc) = 2. = = D - Analog oltage () Charge Injection vs. Analog oltage 6

7 TEST CIRCUITS Switch Input Logic Input NO or NC Switch Output R L 3 Ω OUT C L 3 pf Logic Input Switch Output + 3 t ON % t r < 2 ns t f < 2 ns.9 x OUT t OFF C L (includes fixture and stray capacitance) R OUT = L R L + R ON Logic "" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. Figure. Switching Time Logic Input 3 t r < ns t f < ns NO NO O NC NC R L 3 Ω C L 3 pf NC = NO O 9 % Switch Output t D t D C L (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval gen + R gen 3 NC or NO OUT C L = nf OUT On Δ OUT Off On Q = Δ OUT x C L Figure 3. Charge Injection depends on switch configuration: input polarity determined by sense of switch. 7

8 TEST CIRCUITS nf, 2.4 NC or NO R L NC/ NO Off Isolation = 2 log Analyzer Figure 4. Off-Isolation nf, 2.4 NC or NO Meter HP492A Impedance Analyzer or Equivalent f = MHz Figure. Channel Off/On Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see 8

9 Legal Disclaimer Notice ishay Disclaimer All product specifications and data are subject to change without notice. ishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. ishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify ishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of ishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling ishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify ishay for any damages arising or resulting from such use or sale. Please contact authorized ishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG9411 DESCRIPTION The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low

More information

DG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS

DG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS 0.35-Ω Low-Voltage Dual SPDT Analog Switch DG2535/DG2536 DESCRIPTION The DG2535/DG2536 is a sub Ω (0.35 Ω at 2.7 V) dual SPDT analog switches designed for low voltage applications. The DG2535/DG2536 has

More information

Monolithic Dual SPST CMOS Analog Switch

Monolithic Dual SPST CMOS Analog Switch Monolithic Dual SPST CMOS Analog Switch DG00B DESCRIPTION The DG00B is a dual, single-pole, single-throw analog switch designed to provide general purpose switching of analog signals. This device is ideally

More information

DG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS

DG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS High-Speed, Low r ON, SPDT Analog Switch (2:1 Multiplexer) DG2307 DESCRIPTION The DG2307 is a single-pole-double-throw switch/2:1 mux designed for 2 to 5.5 V applications. Using proprietary sub-micro CMOS

More information

DG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS

DG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS DG275, DG276 Low-Voltage, 0.4 R ON, Single SPST Analog Switch DESCRIPTION The DG275, DG276 are low voltage, single supply, dual SPST analog switches. Designed for high performance switching of analog signals,

More information

Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection

Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection New Product DG/DG1 Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection DESCRIPTION The DG/DG1 are low-voltage single single-pole/ double-throw monolithic CMOS analog switches. Designed

More information

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Power-off Isolation,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single

More information

DG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES

DG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES High-Speed, Low r ON, SPDT Analog Switch (2:1 Multiplexer/Demultiplexer Bus Switch) DG3157 DESCRIPTION The DG3157 is a high-speed single-pole double-throw, low power, TTL-Compatible bus switch. Using sub-micro

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch High-Speed Quad Monolithic SPST CMOS Analog FEATURES BENEFITS APPLICATIONS Fast ing : 55 ns Low Charge Injection: 5 pc Low r DS(on) : 3 TTL/CMOS Compatible Low Leakage: pa Fast Settling Times Reduced ing

More information

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Power-off Protection,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single

More information

Low Voltage, Dual SPDT Analog Switch with Charge Pump

Low Voltage, Dual SPDT Analog Switch with Charge Pump Low Voltage, Dual SPDT Analog Switch with Charge Pump DG, DG, DG DESCRIPTION The DG, DG, DG are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining

More information

Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability

Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability DG6, DG63 DESCRIPTION The DG6, DG63 is a low on-resistance, single-pole/ double-throw monolithic CMOS analog switch with negative

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch DG27B High-Speed Quad Monolithic SPST CMOS Analog Switch DESCRIPTION The DG27B high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage

More information

Precision Quad SPDT Analog Switch

Precision Quad SPDT Analog Switch Precision Quad SPDT Analog Switch DESCRIPTION The consist of four independently controlled single-pole double-throw analog switches. These monolithic switch is designed to control analog signals with a

More information

FEATURES APPLICATIONS

FEATURES APPLICATIONS .7, Low On Resistance, + V, +5 V, +3 V, ± 5 V, SPST Switches DESCRIPTION The DG9E and DG9E are monolithic single-pole-single-throw (SPST) analog switches. The DG9E has a normally closed function. The DG9E

More information

CMOS Analog Switches (Obsolete for non-hermetic. Use DG304B Series as pin-for-pin replacements.)

CMOS Analog Switches (Obsolete for non-hermetic. Use DG304B Series as pin-for-pin replacements.) DGA_MIL/A_MIL/A_MIL/A_MIL CMOS Analog Switches (Obsolete for non-hermetic. Use DGB Series as pin-for-pin replacements.) -V Input Range Fast Switching t ON : ns Low r DS(on) : Single Supply Operation CMOS

More information

0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch

0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch .4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch DESCRIPTION The DG2523 and DG2524 are four-channel single-pole double-throw (SPDT) analog switches. The DG2523 has two control inputs

More information

DG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS

DG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch DESCRIPTION The DG2706 is a high speed, low voltage, low On-resistance, quad SPDT (single pole double throw) analog switch. It operates from a.6

More information

Improved Quad CMOS Analog Switches

Improved Quad CMOS Analog Switches Improved Quad CMOS Analog Switches DESCRIPTION The analog switches are highly improved versions of the industry-standard DG2A, DG22. These devices are fabricated in proprietary silicon gate CMOS process,

More information

0.45, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability

0.45, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability 5, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability DESCRIPTION The is a dual SPDT low on-resistance switch designed to from a single 1.6 V to 5.5 V power supply. It is a bi-directional

More information

FEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number

FEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number Dual SPST Switches DG, DG8, DG9 DESCRIPTION The DG, DG8, and DG9 are low voltage, precision dual SPST switches that can be operated in a single supply or in a dual supply configuration power supply with

More information

Precision Monolithic Quad SPST CMOS Analog Switches

Precision Monolithic Quad SPST CMOS Analog Switches Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix

More information

FEATURES BENEFITS APPLICATIONS. PARAMETER LIMIT UNIT Reference to GND V to +6 IN, COM, NC, NO a -0.3 to (V )

FEATURES BENEFITS APPLICATIONS. PARAMETER LIMIT UNIT Reference to GND V to +6 IN, COM, NC, NO a -0.3 to (V ) DESCRIPTION www.vishay.com.5, High Bandwidth, Dual SPDT Analog Switch The DGE is a low-voltage dual single-pole / double-throw monolithic CMOS analog switch. Designed to operate from. V to 5.5 V power

More information

DG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix.

DG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix. 1.5 On Resistance, ± 15 / +12 / ± 5, Quad SPST Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix

More information

0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch

0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch .39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch DESCRIPTION The is a compact, low resistance, ultra-low distortion double pole double throw (DPST) analog switch. The features a flat.39

More information

Precision Monolithic Quad SPST CMOS Analog Switches

Precision Monolithic Quad SPST CMOS Analog Switches Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The DG4 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining

More information

Dual SPDT Analog Switch

Dual SPDT Analog Switch Dual SPDT Analog Switch DESCRIPTION The DG9236 is a CMOS, dual SPDT analog switch designed to operate from = 2.7 V to = 6 V max. operating, single supply. All control logic inputs have a guaranteed.8 V

More information

3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers

3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers DG148E, DG149E 3.9, 8-Channel / Dual 4-Channel, ± 15, +12, ± 5 Precision Multiplexers DESCRIPTION The DG148E is a precision analog multiplexer comprising eight single-ended channels. The DG149E is a dual

More information

700 MHz, -3 db Bandwidth; Single SPDT Analog Switch

700 MHz, -3 db Bandwidth; Single SPDT Analog Switch 7 MHz, -3 db Bandwidth; Single SPDT Analog Switch DESCRIPTION is a low R ON, high bandwidth analog switch configured in single SPDT. It achieves 5 switch on resistance, greater than 7 MHz -3 db bandwidth

More information

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature

More information

Automotive 125 C Analog Switch Dual DPDT / Quad SPDT, 0.37, 338 MHz Bandwidth

Automotive 125 C Analog Switch Dual DPDT / Quad SPDT, 0.37, 338 MHz Bandwidth Automotive 125 C Analog Switch Dual DPDT / Quad SPDT, 0.37, 338 MHz Bandwidth DESCRIPTION The, is a four-channel single-pole double-throw (SPDT) analog switch with two control inputs. It is also known

More information

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers 8-Ch/ual 4-Ch High-Performance CMOS Analog Multiplexers ESCRIPTION The G48 is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a

More information

FEATURES APPLICATIONS. Switches are shown for a Logic 0 Input

FEATURES APPLICATIONS. Switches are shown for a Logic 0 Input 2, Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches ESCRIPTION The G251, G252, and G253 are monolithic quad single-pole single-throw (SPST) analog switches that operate from

More information

N-Channel 40-V (D-S), 175 C MOSFET

N-Channel 40-V (D-S), 175 C MOSFET N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-9H PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A) c Q g (Typ) 4.9 at V GS = V 5 55 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature High Threshold Voltage

More information

FEATURES DG721, TDFN-8 COM 2 7 IN 1 NO 1 1 NO 2. Top View. Device Marking for MSOP-8: 721

FEATURES DG721, TDFN-8 COM 2 7 IN 1 NO 1 1 NO 2. Top View. Device Marking for MSOP-8: 721 .8 V to. V, Dual SPST Switches DG, DG, DG DESCRIPTION The DG, DG and DG are precision dual SPST switches designed to operate from single.8 V to. V power supply with low power dissipation. The DG, DG and

More information

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET Dual P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition Compliant to RoHS Directive

More information

P-Channel 40 V (D-S), 175 C MOSFET

P-Channel 40 V (D-S), 175 C MOSFET P-Channel 4 V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETs 75 C Junction Temperature Compliant

More information

Low Power, High Voltage SPST Analog Switches

Low Power, High Voltage SPST Analog Switches Low Power, High Voltage SPST Analog Switches DG67, DG68 DESCRIPTION The DG67 and DG68 are dual supply single-pole/singlethrow (SPST) switches. On resistance is max. and flatness is 2 max. over the specified

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET SiDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).68 at V GS =. V.6 a nc.8 at V GS =. V. TO-6 (SOT-) FEATURES Halogen-free According to IEC 69-- Definition TrenchFET

More information

P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET Si33BDV P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -.9 at V GS = -.7 V - 3.8. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition

More information

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DG9E High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DESCRIPTION The DG9E is monolithic CMOS dual single-pole / double-throw (SPDT) analog switches. It is specifically designed for low-voltage,

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET SiCDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) e Q g (Typ.).8 at V GS = 4. V 6 a.6 at V GS =. V 6 a 8.8 nc.44 at V GS =.8 V.6 FEATURES Halogen-free According to IEC 649--

More information

0.3 pc Charge Injection, 100 pa Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch

0.3 pc Charge Injection, 100 pa Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch 0.3 pc Charge Injection, pa Leakage CMOS ± 5 / 5 / 3 Dual SPDT Analog Switch DESCRIPTION The is a dual SPDT CMOS, analog switch, designed to operate from a +3 to +16 single supply, or from ± 3 to ± 8,

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET SiEDL N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 6 SOT- SC-7 (-LEADS). at V GS = V. at V GS =. V. 8 at V GS = V. FEATURES Halogen-free According to IEC 69-- Definition TrenchFET

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-

More information

SUD40N06-25L. N-Channel 60-V (D-S), 175 C MOSFET, Logic Level. Vishay Siliconix FEATURES PRODUCT SUMMARY

SUD40N06-25L. N-Channel 60-V (D-S), 175 C MOSFET, Logic Level. Vishay Siliconix FEATURES PRODUCT SUMMARY N-Channel 6-V (D-S), 75 C MOSFET, Logic Level SUD4N6-25L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.22 @ V GS = V 3 6.25 @ V GS = 4.5 V 3 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature

More information

N- and P-Channel 2.5-V (G-S) MOSFET

N- and P-Channel 2.5-V (G-S) MOSFET N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) (A) N-Channel. at = 4.5 V ± 4.5.4 at =.5 V ± 3.9 P-Channel -.5 at = - 4.5 V ± 3.5.85 at = -.5 V ±.7 FEATURES Halogen-free Option Available

More information

Single 8-Ch/Differential 4-Ch CMOS Analog Multiplexers (Obsolete for non-hermetic. Use DG408/409 as pin-for-pin replacements.)

Single 8-Ch/Differential 4-Ch CMOS Analog Multiplexers (Obsolete for non-hermetic. Use DG408/409 as pin-for-pin replacements.) G58A_MIL/59A_MIL Single 8-Ch/ifferential -Ch CMOS Analog Multiplexers (Obsolete for non-hermetic. Use G8/9 as pin-for-pin replacements.) Low On-Resistance: 2 TTL and CMOS Logic Compatible Low Power: 3

More information

P-Channel 30-V (D-S), MOSFET

P-Channel 30-V (D-S), MOSFET SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUDN-5L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) Q g (Typ). @ V GS = V.5.5 @ V GS =.5 V. 7.7 TO-5 D Drain Connected to Tab G G D S Order Number: Top View SUDN-5L SUDN-5L

More information

2N4416/2N4416A/SST4416. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION

2N4416/2N4416A/SST4416. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION N-Channel JFETs N/NA/SST PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I DSS Min (ma) N. NA. to. SST. FEATURES BENEFITS APPLICATIONS Excellent High-Frequency Gain: N/A, Gps db (typ)

More information

0.5 pc Charge Injection, 100 pa Leakage, Dual SPDT Analog Switch

0.5 pc Charge Injection, 100 pa Leakage, Dual SPDT Analog Switch 0.5 pc Charge Injection, pa Leakage, Dual SPDT Analog Switch DESCRIPTION The is an analog CMOS, dual SPDT switch, designed to operate from a +2.7 V to +12 V single supply or from ± 2.7 V to ± 5 V, dual

More information

P-Channel 100 V (D-S) MOSFET

P-Channel 100 V (D-S) MOSFET SUD9P-95 P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) Q g (Typ.).95 at V GS = - V - 8.8 -.7.2 at V GS = - 4.5 V - 8.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET

More information

Power MOSFET FEATURES. IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024

Power MOSFET FEATURES. IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024 Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single D HVMDIP G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead

More information

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Si59BDC Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 6-8 ChipFET (Dual).65 at V GS = V a nc. at V GS =.5 V a S FEATURES Halogen-free According to IEC 69-- Definition

More information

U290/291. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION ABSOLUTE MAXIMUM RATINGS

U290/291. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION ABSOLUTE MAXIMUM RATINGS U9/9 N-Channel JFETs PRODUCT SUMMARY Part Number V GS(off) (V) r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) U9. to 3 U9.5 to.5 7 FEATURES BENEFITS APPLICATIONS Low On-Resistance: U9 < 3 Fast Switching

More information

P-Channel 1.8 V (G-S) MOSFET

P-Channel 1.8 V (G-S) MOSFET Si7DL P-Channel. V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).9 at V GS = -.5 V ±.9 -.5 at V GS = -.5 V ±.7.5 at V GS = -. V ±. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch. Features Benefits Applications. Fast Settling Times Reduced Switching Glitches High Precision

High-Speed Quad Monolithic SPST CMOS Analog Switch. Features Benefits Applications. Fast Settling Times Reduced Switching Glitches High Precision DG27 High-Speed Quad Monolithic SPST CMOS Analog Features Benefits Applications Fast ing : ns Low Charge Injection: pc Low r DS(on) : 32 TTL/CMOS Compatible Low Leakage: pa Description Fast Settling Times

More information

Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET Dual N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).95 at V GS = V. 3. at V GS = 4.5 V 9.4 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g Tested APPLICATIONS DC/DC

More information

N-Channel 200-V (D-S) 175 C MOSFET

N-Channel 200-V (D-S) 175 C MOSFET New Product SUM33N26P ishay Siliconix NChannel 2 (DS) 75 C MOSFET PRODUCT SUMMARY (BR)DSS () r DS(on) (Ω) I D (A) Q g (Typ) 2 TO263.59 at GS = 5 33.6 at GS = 33 53 FEATURES TrenchFET Power MOSFETS 5 C

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power

More information

N- and P-Channel 1.8 V (G-S) MOSFET

N- and P-Channel 1.8 V (G-S) MOSFET Si7DH N- and P-Channel.8 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A). at V GS =. V. N-Channel.8 at V GS =. V.. at V GS =.8 V.. at V GS = -. V -.86 P-Channel -.88 at V GS = -. V -.67.6 at V

More information

P-Channel Enhancement-Mode MOSFET Transistors. I D(on) Min (ma) r DS(on) Max ( ) 3N to N to

P-Channel Enhancement-Mode MOSFET Transistors. I D(on) Min (ma) r DS(on) Max ( ) 3N to N to P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V (BR)DSS Min (V) V GS(th) (V) r DS(on) Max ( ) I D(on) Min (ma) C rss Max (pf) t ON Typ (ns) 3N63 4 2 to 5 25 5.7 8 3N64 3 2 to

More information

N- and P-Channel 30-V (D-S) MOSFET

N- and P-Channel 30-V (D-S) MOSFET N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free

More information

Complementary N- and P-Channel 40-V (D-S) MOSFET

Complementary N- and P-Channel 40-V (D-S) MOSFET Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -

More information

P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET New Product SiL P-Channel.-V (G-S) MOSFET PROUCT SUMMARY V S (V) r S(on) (Ω) I 8 at V GS = -. V ±. -. at V GS = -.6 V ±..6 at V GS = -. V ±. FEATURES TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT

More information

Dual Output Power Switch

Dual Output Power Switch Dual Output Power Switch FEATURES Two Output Power Switches Total Output Drive 200 ma Continuous 9- to 35- Supply oltage Range Low Side or High Side Switch Configuration Pb-free Available Internal Output

More information

Complementary 20 V (D-S) MOSFET

Complementary 20 V (D-S) MOSFET SiDL Complementary V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).9 at V GS =. V. N-Channel.7 at V GS =.7 V..7. at V GS =. V..99 at V GS = -. V -. P-Channel -.6 at V GS = -.7 V

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch. Features Benefits Applications. Fast Settling Times Reduced Switching Glitches High Precision

High-Speed Quad Monolithic SPST CMOS Analog Switch. Features Benefits Applications. Fast Settling Times Reduced Switching Glitches High Precision DG High-Speed Quad Monolithic SPST CMOS Analog Switch Features Benefits Applications Fast Switching t ON : ns Low Charge Injection: 9 pc Low r DS(on) : 3 TTL Compatible Low Leakage: pa Fast Settling Times

More information

High-Speed, Low-Glitch D/CMOS Analog Switches

High-Speed, Low-Glitch D/CMOS Analog Switches G6, G62, G63 High-Speed, Low-Glitch /CMOS Analog Switches ESCRIPTION The G6, G62, G63 feature high-speed lowcapacitance lateral MOS switches. Charge injection has been minimized to optimize performance

More information

Bi-Directional P-Channel MOSFET/Power Switch

Bi-Directional P-Channel MOSFET/Power Switch Bi-Directional P-Channel MOSFET/Power Switch PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) ± 7 DESCRIPTION.7 at V GS = -.5 V ±.. at V GS = -.5 V ±. The is a low on-resistance p-channel power MOSFET providing

More information

P-Channel 20-V (D-S) MOSFET with Schottky Diode

P-Channel 20-V (D-S) MOSFET with Schottky Diode P-Channel -V (D-S) MOSFET with Schottky Diode Si3853DV PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = -.5 V ±.8 -.3 at V GS = -.5 V ±.3 FEATURES Halogen-free According to IEC 9-- Definition LITTLE

More information

P-Channel 8-V (D-S) MOSFET

P-Channel 8-V (D-S) MOSFET New Product P-Channel 8-V (D-S) MOSFET Si25ADS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).4 at V GS = - 4.5 V - 4. - 8.6 at V GS = - 2.5 V -.4 7.8 nc.88 at V GS = -.8 V - 2. FEATURES Halogen-free

More information

P-Channel 40 V (D-S) 175 C MOSFET

P-Channel 40 V (D-S) 175 C MOSFET P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested

More information

N-Channel 30-V (D-S) MOSFET with Sense Terminal

N-Channel 30-V (D-S) MOSFET with Sense Terminal SUM5N3-3LC N-Channel 3-V (D-S) MOSFET with Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) (Ω) (A).3 at V GS = V 5 a 3.7 at V GS =.5 V 8 a D PAK-5 FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode

More information

Power MOSFET FEATURES. Note * Pb containing terminations are not RoHS compliant, exemptions may apply DESCRIPTION. IRFD113PbF SiHFD113-E3

Power MOSFET FEATURES. Note * Pb containing terminations are not RoHS compliant, exemptions may apply DESCRIPTION. IRFD113PbF SiHFD113-E3 Power MOSFET PRODUCT SUMMARY V DS (V) 60 R DS(on) (Ω) V GS = 10 V 0.8 Q g (Max.) (nc) 7 Q gs (nc) 2 Q gd (nc) 7 Configuration Single D HVMDIP FEATURES For Automatic Insertion Compact Plastic Package End

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 3 2.5 mm.29 at V GS = V 4.5 a 3 nc.25 at V GS = V 4.5 a.33 at V GS = 4.5 V 4.5 a PowerPAK SC-7-L Dual 2.5 25

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V 7.5 3.3 at V GS = 4.5 V 6.5 FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power MOSFET PWM

More information

Power MOSFET. IRFP450PbF SiHFP450-E3 IRFP450 SiHFP450. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRFP450PbF SiHFP450-E3 IRFP450 SiHFP450. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 150 Q gs (nc) 20 Q gd (nc) 80 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S

More information

Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET

Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET Automotive Dual N-Channel 6 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 6 R DS(on) (Ω) at V GS = V.55 I D (A) 4.5 Configuration Dual SO-8 D D 2 FEATURES TrenchFET Power MOSFET Package with Low Thermal

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch High-Speed Quad Monolithic SPST CMOS Analog Fast ing : 55 ns Low Charge Injection: 5 pc Low r DS(on) : 32 TTL/CMOS Compatible Low Leakage: pa Fast Settling Times Reduced ing Glitches High Precision High-Speed

More information

N- and P-Channel 20-V (D-S) MOSFET

N- and P-Channel 20-V (D-S) MOSFET N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A). at V GS =. V. N-Channel. at V GS =. V.. at V GS =. V.. at V GS = -. V -. P-Channel -. at V GS = -. V -.. at V GS = -.V -. FEATURES

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET Si357BDV P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A).5 at V GS = - V - 5. - 3. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Available TrenchFET Power MOSFETs

More information

N-Channel 2.5-V (G-S) Battery Switch, ESD Protection

N-Channel 2.5-V (G-S) Battery Switch, ESD Protection N-Channel.-V (G-S) Battery Switch, ESD Protection Si694AEDQ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).33 at V GS = 4. V 4.6 8.38 at V GS = 3. V 4.3.4 at V GS =. V 4. FEATURES Halogen-free Low R DS(on)

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET Si36DS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A).57 @ V GS = V 3.5 3.9 @ V GS =.5 V. FEATURES TrenchFET Power MOSFET % R g Tested - TO-36 (SOT-3) G 3 D S Top View Si36DS (A6)*

More information

Power MOSFET FEATURES. IRL530PbF SiHL530-E3 IRL530 SiHL530 T C = 25 C. V GS at 5.0 V

Power MOSFET FEATURES. IRL530PbF SiHL530-E3 IRL530 SiHL530 T C = 25 C. V GS at 5.0 V Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.16 Q g (Max.) (nc) 28 Q gs (nc) 3.8 Q gd (nc) 14 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D

More information

J/SST/U308 Series. N-Channel JFETs. Vishay Siliconix J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS

J/SST/U308 Series. N-Channel JFETs. Vishay Siliconix J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS J/SST/U8 Series N-Channel JFETs J8 SST8 U9 J9 SST9 U J SST PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I DSS Min (ma) J8 to.5 25 8 J9 to 25 J 2 to.5 25 8 2 SST8 to.5 25 8

More information

Si9986. Buffered H-Bridge. Vishay Siliconix. RoHS* COMPLIANT DESCRIPTION FEATURES APPLICATIONS

Si9986. Buffered H-Bridge. Vishay Siliconix. RoHS* COMPLIANT DESCRIPTION FEATURES APPLICATIONS Si998 ishay Siliconix Buffered H-Bridge DESCRIPTION The Si998 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous. A at DD = (room temperature)

More information

Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion

Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion DESCRIPTION The SiP41104 is a high-speed half-bridge MOSFET driver for use in high frequency, high current, multiphase dc-to-dc synchronous rectifier

More information

Dual N-Channel 20 V (D-S) MOSFET

Dual N-Channel 20 V (D-S) MOSFET Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition

More information

Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET

Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET Automotive Dual P-Channel 3 V (D-S) 75 C MOSFET D 6 Marking Code: 9B TSOP-6 Dual D S 5 G Top View S 3 G FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for

More information

Dual P-Channel 12-V (D-S) MOSFET

Dual P-Channel 12-V (D-S) MOSFET Dual P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -. at V GS = -.5 V -.5 a.5 nc. at V GS = -.5 V -.5 a. at V GS = -.8 V - 3.5 PowerPAK SC-7- Dual FEATURES Halogen-free

More information

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET Si33DS P-Channel 0-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.039 at V GS = - 4.5 V - 4.7-0 0.05 at V GS = -.5 V - 4. 0.068 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel -V (D-S), 75 C MOSFET Si4559EY V DS (V) r DS(on) ( ) (A) N-Channel P-Channel.55 @ V GS = V 4.5.75 @ V GS = 4.5 V 3.9. @ V GS = V 3..5 @ V GS = 4.5 V.8 D D S SO-8 S 8 D G 7 D S 3 D G 4 5 D G G

More information

Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant

More information

16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers

16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DG46, DG47 6-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION The DG46 is a 6 channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined

More information

Dual N-Channel 12-V (D-S) MOSFET

Dual N-Channel 12-V (D-S) MOSFET New Product Dual N-Channel -V (D-S) MOSFET SiA9DJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V.5. at V GS =.5 V.5.5 nc.3 at V GS =. V.5 PowerPAK SC-7- Dual FEATURES Halogen-free

More information