Load Switch with Level-Shift

Transcription

1 SiX Load Switch with Level-Shift PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A).5 at V IN =.5 V ±.3.8 to 8.89 at V IN =.5 V ±.3.5 at V IN =.8 V ±.3 SiX, 3 S D Q FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power MOSFET.8 V to 8 V Input.5 V to 8 V Logic Level Control Smallest LITTLE FOOT Package:. mm x. mm V ESD Protection On Input Switch, V ON/OFF Adjustable Slew-Rate Compliant to RoHS Directive /95/EC R, C DESCRIPTION ON/OFF 5 Q SC89- Top View R The SiX includes a p- and n-channel MOSFET in a single SC89- package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as.5 V. The SiX operates on supply lines from.8 V to 8 V, and can drive loads up to.3 A. R R, C Marking Code D D 3 5 ON/OFF S P WL Lot Traceability and Date Code Part Number Code Ordering Information: SiX-T-GE3 (Lead (Pb)-free and Halogen-free) TYPICAL APPLICATION CIRCUIT SiX R at V IN =.5 V, R = kω V IN ON/OFF R 5 Q Q, 3 C C o V OUT LOAD 8 I L =.3 A C i = µf R C i R GND 8 Note: For R switching variations with other V IN /R combinations See Typical Characteristics Document Number: 789 S-5-Rev. D, 8-Nov-

2 SiX COMPONENTS R Pull-Up Resistor Typical k to m a R Optional Slew-Rate Control Typical to k a C Optional Slew-Rate Control Typical pf Notes: a. Minimum R value should be at least x R to ensure Q turnon. The SiX is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so thaise-times can be tailored to different load types. ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) Parameter Symbol Limit Unit Input Voltage V IN 8 ON/OFF Voltage V ON/OFF 8 V Load Current Continuous a, b ±.3 I L Pulsed b, c ±. A Continuous Intrinsic Diode Conduction a I S -.5 Maximum Power Dissipation a P D.7 W Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C ESD Rating, MIL-STD-883D Human Body Model ( pf, 5 ) ESD kv THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (Continuous Current) a R thja 7 Maximum Junction-to-Foot (Q) R thjc 5 5 C/W Notes: a. Surface mounted on " x " FR board. SPECIFICATIONS (T J = 5 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF Characteristics Reverse Leakage Current I FL V IN = 8 V, V ON/OFF = V µa Diode Forward Voltage V SD I S = -.5 A.85. V ON Characteristics Input Voltage Range V IN.8 8 V On-Resistance (P-Channel) at A R DS(on) V ON/OFF =.5 V, V IN =.5 V, I D =.3 A.7.89 V ON/OFF =.5 V, V IN =.5 V, I D =.3 A.5.5 V ON/OFF =.5 V, V IN =.8 V, I D =.3 A..5 On-State (P-Channel) Drain Current I D(on) Notes: a. Surface mounted on FR board. b. V IN = 8 V, V ON/OFF = 8 V, T A = 5 C. c. Pulse test; pulse width 3 µs, duty cycle %. V IN-OUT. V, V IN = 5 V, V ON/OFF =.5 V V IN-OUT.3 V, V IN = 3 V, V ON/OFF =.5 V.8 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. A Document Number: 789 S-5-Rev. D, 8-Nov-

3 SiX TYPICAL CHARACTERISTICS (5 C, unless otherwise noted)...8 V ON/OFF =.5 V to 8 V. V ON/OFF =.5 V to 8 V. V DROP (V).. T J = 5 C T J = 5 C VDROP (V).8. T J = 5 C. T J = 5 C I L - (A) V DROP vs. I L at V IN =.5 V I L - (A) V DROP vs. I L at V IN =.5 V..8. V ON/OFF =.5 V to 8 V.7 V ON/OFF =.5 V to 8 V.. V DROP (V)..8. T J = 5 C T J = 5 C VDROP(V).5..3 T J = 5 C T J = 5 C I L - (A) V DROP vs. I L at V IN =.8 V. 3 5 V IN (V) V DROP vs. I L at V IN =.5 V...5 I L =.3 A V ON/OFF =.8 V to 8 V. I L =.3 A V ON/OFF =.5 V to 8 V V DROP Variance (V) V IN =.8 V V IN =.5 V - On-Resistance (Ω) RSS(on) T J = 5 C T J = 5 C T J -Junction Temperature ( C) V DROP Variance vs. Junction Temperature. 3 5 V IN (V) On-Resistance vs. Input Voltage Document Number: 789 S-5-Rev. D, 8-Nov- 3

4 SiX TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) R DS(on) - On-Resistance (Normalized) I L =.3 A V ON/OFF =.5 V to 8 V V IN =.8 V V IN =.5 V 8 I L =.3 A C i = µf T J -Junction Temperature ( C) Normalized On-Resistance vs. Junction Temperature 8 R at V IN =.5 V, R = kw 8 I L =.3 A C i = µf 8 I L =.3 A C i = µf 8 R at V IN =.5 V, R = kw 8 R at V IN =.8 V, R = kw 8 8 I L =.3 A C i = µf I L =.3 A C i = µf (µf) td(on) 8 R at V IN =.5 V, R = 3 kw 8 R at V IN =.5 V, R = 3 kw Document Number: 789 S-5-Rev. D, 8-Nov-

5 SiX TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 8 I L =.3 A C i = µf 8 R at V IN =.8 V, R = 3 kw Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse Notes: Square Wave Pulse Dureation (s) Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = 7 C/W 3. T JM - T A = P DM Z (t) thja. Surface Mounted maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?789. Document Number: 789 S-5-Rev. D, 8-Nov- 5

6 Package Information SC-89 -Leads (SOT-53F) 3 E/ A D e x aaa C D B 5 SECTION B-B E/ C 3 E E x aaa C DETAIL A 5 3 x bbb C e B x b ddd M C A B D L A L A A SEE DETAIL A Notes. Dimensions in millimeters.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed.5 mm per dimension E does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed.5 mm per side. 3. Dimensions D and E are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body.. Datums A, B and D to be determined. mm from the lead tip. 5. Terminal numbers are shown for reference only.. These dimensions apply to the flat section of the lead between.8 mm and.5 mm from the lead tip. DIM. MILLIMETERS MIN. NOM. MAX. A A.. b.5..3 c...8 D.5..7 E.5..7 E.5..5 e e L L...3 C-39-Rev. C, -Aug- DWG: 588 Revision: -Aug- Document Number: 7 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

7 Application Note 8 RECOMMENDED MINIMUM PADS FOR SC-89: -Lead.5 (.3).9 (.753).3 (.798).9 (.78). (.3).5 (.). (.5) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 75 Revision: -Jan-8

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