Dual SPDT Analog Switch

Transcription

1 Dual SPDT Analog Switch DESCRIPTION The DG9236 is a CMOS, dual SPDT analog switch designed to operate from = 2.7 V to = 6 V max. operating, single supply. All control logic inputs have a guaranteed.8 V logic high threshold when operation from a + 6 V power supply. This makes the DG9236 ideally suited to interface directly with low voltage micro-processor control signals. Processed with high density CMOS technology, the DG9236 while providing ultra low parasitic capacitance of 2 pf for CS (OFF) and 8.4 pf for CD (ON). Other performance features are: 3 db bandwidth, 8 MHz, - 7 db crosstalk and 62 db off isolation at MHz frequency. Key applications for the DG9236 are logic level translation, pulse generator, and high speed or low noise signal switching in precision instrumentations and portable device designs. The operation temperature range is specified from - 4 C to + 85 C. The DG9236 is available in space saving.4 mm x.8 mm miniqfn package. As a committed partner to the community and the environment, manufactures this product with lead (Pb)-free device termination. The miniqfn- package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free -E4 suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL rating. FEATURES Leakage current <.5 na max. at 85 C Low switch capacitance (C soff, 2 pf typ.) R DS(on) max. 8 MHz bandwidth y specified with single supply operation at 6 V Low voltage,.8 V CMOS/TTL compatible Excellent isolation and crosstalk performance (typ. > - 6 db at MHz) y specified from - 4 C to 85 C Latch-up current 3 ma per JESD78 Lead (Pb)-free low profile miniqfn- (.4 mm x.8 mm x.55 mm) Compliant to RoHS Directive 22/95/EC APPLICATIONS High-end data acquisition Medical instruments Precision instruments High speed communications applications Automated test equipment Sample and hold applications RoHS COMPLIANT FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG9236 miniqfn - L 8 S2A 7 S2B 6 5 D2 A 9 Logic 4 D A Pin : LONG LEAD 2 SA Top View 3 SB 3x Pin Device marking: 3x for DG9236 x = Date/Lot Traceability Code TRUTH TABLE Selected Input On Switches A A DG9236 X D to SA X D to SB X D2 to S2A X D2 to S2B Document Number: 6749 S-598-Rev. B, 25-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

2 ORDERING INFORMATION Temp. Range Package Part Number - 4 C to 85 C pin miniqfn DG9236DN-T-E4 Notes: - 4 C to 85 C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) Parameter Limit Unit to 8 Digital Inputs a, V S, V D () +.3 or 3 ma, whichever occurs first V Continuous Current (Any Terminal) 3 Peak Current, S or D (Pulsed ms, % Duty Cycle) ma Storage Temperature - 65 to 5 C Power Dissipation (Package) b pin miniqfn c, d 28 mw Thermal Resistance (Package) b pin miniqfn 357 C/W Notes: a. Signals on SX, DX, or AX exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mw/ C above 7 C. d. Manual soldering with iron is not recommended for leadless components. The miniqfn- is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. SPECIFICATIONS (for 6 V Supply) Parameter Symbol Test Conditions Unless Otherwise Specified = 6 V, V A, A =.8 V,.5 V a Temp. b Typ. c - 4 C to 85 C Analog Switch Analog Signal Range e V ANALOG 6 V On-Resistance R DS(on) I S = ma, V D =.7 V, 2.6 V, 8 V, V, 5.3 V On-Resistance Match R ON I S = ma, V D =.7 V, 2.6 V, 8 V, V, 5.3 V On-Resistance Flatness R FLATNESS I S = ma, V D =.7 V, 2.6 V, 8 V, V, 5.3 V Switch Off Leakage Current Channel On Leakage Current Digital Control = 6 V, V D = V/5 V, V S = 5 V/ V = 6 V, V D = V S V/5 V Min. d Max. d ± ± ± Input Current, V IN Low I IL V AX =.5 V Input Current, V IN High I IH V AX =.8 V µa Input Capacitance e C IN f = MHz 3 pf Dynamic Characteristics Turn-On Time t ON Turn-Off Time t OFF R L = 3, C L = 35 pf 7 55 see figure, 2 65 ns Break-Before-Make t BBM Charge Injection e Q INJ V g = V, R g =, C L = nf 6 pc Off Isolation e OIRR R L = 5, C L = 5 pf, f = MHz - 62 db Bandwidth e BW R L = 5 8 MHz Channel-to-Channel Crosstalk e X TALK R L = 5, C L = 5 pf, f = MHz - 7 db Unit na 2 Document Number: 6749 S-598-Rev. B, 25-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

3 SPECIFICATIONS (for 6 V Supply) Parameter Dynamic Characteristics Source Off Capacitance e C S(off) 2 f = MHz pf Channel On Capacitance e C D(on) 8.4 Total Harmonic Distortion e Signal = V THD RMS, 2 Hz to 2 khz,.8 % R L = 6 Power Supplies Symbol Test Conditions Unless Otherwise Specified = 6 V, V A, A =.8 V,.5 V a Temp. b Typ. c Power Supply Current I+ V IN = V, or Ground Current I C to 85 C Min. d Max. d.5. Unit µa SPECIFICATIONS (for 5 V Supply) Parameter Symbol Test Conditions Unless Otherwise Specified = 5 V, V A, A =.4 V,.5 V a Temp. b Typ. c - 4 C to 85 C Analog Switch Analog Signal Range e V ANALOG 5 V On-Resistance R DS(on) I S = ma, V D = V, 3 V, 3.5 V On-Resistance Match R ON I S = ma, V D = V, 3 V, 3.5 V Switch Off Leakage Current Channel On Leakage Current Digital Control = 5.5 V, V D = V/4.5 V, V S = 4.5 V/ V = 5.5 V, V S = V D = V/4.5 V Min. d Max. d ± ± ± Input Current, V IN Low I L V AX =.5 V Input Current, V IN High I H V AX =.4 V µa Input Capacitance C IN f = MHz 3 pf Dynamic Characteristics Turn-On Time t ON 7 Turn-Off Time t OFF R L = 3, C L = 35 pf 7 7 see figure, 2 8 ns Break-Before-Make-Time t BMM 42 5 Charge Injection e Q INJ C L = nf, R GEN =, V GEN = V 2 pc Off-Isolation e OIRR - 62 Crosstalk e X TALK f = MHz, R L = 5, C L = 5 pf - 7 db Bandwidth e BW R L = 5 57 MHz Total Harmonic Distortion e THD Signal = V RMS, 2 Hz to 2 khz, R L = % Source Off Capacitance e C S(off) 2. f = MHz Channel On Capacitance e C D(on) 8. pf Power Supplies Power Supply Current I+ V IN = V, or Ground Current I Unit na µa Document Number: 6749 S-598-Rev. B, 25-Apr- 3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

4 SPECIFICATIONS (for 3 V Supply) Parameter Symbol Test Conditions Unless Otherwise Specified = 3 V, V A, A =.4 V,.5 V a Temp. b Typ. c - 4 C to + 85 C Analog Switch Analog Signal Range e V ANALOG 3 V On-Resistance R DS(ON) I S = ma, V D = +.5 V On-Resistance Match R ON I S = ma, V D = +.5 V Switch Off Leakage Current (for 6 pin miniqfn) Channel On Leakage Current (for 6 pin miniqfn) Digital Control = 3.3 V, V- = V V D = V/3 V, V S = 3 V/ V = 3.3 V, V- = V, V S = V D = V/3 V Notes: a. V IN = input voltage to perform proper function. b. = 25 ºC, = as determined by the operating temperature. c. Typical value are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Min. d Max. d ± ± ± Input Current, V IN Low I L V AX =.5 V Input Current, V IN High I H V AX =.4 V µa Input Capacitance C IN f = MHz 3. pf Dynamic Characteristics Enable Turn-On Time t ON Enable Turn-Off Time t OFF R L = 3, C L = 35 pf 2 see figure, 2 2 ns Break-Before-Make-Time t BMM Charge Injection e Q INJ C L = nf, R GEN =, V GEN = V pc Off-Isolation e OIRR - 63 f = MHz, R L = 5, C L = 5 pf Crosstalk e X TALK - 7 db Bandwidth e BW R L = 5 83 MHz Total Harmonic Distortion e THD Signal = V RMS, 2 Hz to 2 khz, R L = % Source Off Capacitance e C S(off) 2. f = MHz Channel On Capacitance e C D(on) 8.3 pf Power Supplies Power Supply Current I+ V IN = V, or Ground Current I not limit Unit na µa 4 Document Number: 6749 S-598-Rev. B, 25-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

5 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) R ON - On-Resistance ( ) V CC = 2.7 V V CC = 3. V V CC = 5. V T = 25 C I S = ma V CC =.8 V R ON - On-Resistance ( ) V CC = 2 V V CC = 3.2 V V CC = 4.6 V V CC = 7.6 V V CC = 6 V T = 25 C I S = ma R ON vs. V D and Single Supply Voltage R ON vs. V D and Single Supply Voltage 5 9 R ON - On-Resistance ( ) V CC = 5 V I S = ma + 85 C - 4 C + 25 C R ON - On-Resistance ( ) V CC = 3 V I S = ma + 85 C - 4 C + 25 C R ON vs. Analog Voltage and Temperature R ON vs. Analog Voltage and Temperature 2 2 R ON - On-Resistance ( ) V CC = 2 V I S = ma + 85 C - 4 C + 25 C R ON - On-Resistance ( ) V CC = 6 V I S = ma + 85 C - 4 C + 25 C R ON vs. Analog Voltage and Temperature R ON vs. Analog Voltage and Temperature Document Number: 6749 S-598-Rev. B, 25-Apr- 5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

6 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Supply Current (na) V CC = 6 V. I+ I Supply Current vs. Temperature I+ - Supply Current (A) ma ma ma µa µa µa na na na - 4 C pa = 6 V + 85 C pa + 25 C pa Supply Current vs. V IN and Temperature ma I CC - Supply Current (A) ma µa µa µa na na na = 7.6 V = 6 V = 2 V = 5 V = 3 V Leakage Current (pa) V CC = V pa K K K M M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Leakage Current vs. Temperature V CC = + 6 V 8 6 = 6 V T = 25 C Leakage Current (pa) Leakage Current (pa) Leakage Current vs. Temperature Leakage Current vs. Analog Voltage 6 Document Number: 6749 S-598-Rev. B, 25-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

7 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 5 2 Leakage Current (pa) = 6 V T = 85 C t ON(EN), t OFF(EN) - Switching Time (ns) t ON V CC = + 3 V t ON V CC = + 5 V t OFF V CC = + 5 V t OFF V CC = + 3 V Leakage Current vs. Analog Voltage Switching Time vs. Temperature t ON /t OFF 5 4 t ON(EN), t OFF(EN) - Switching Time (ns) 4 t ON V CC = + 2 V 3 t ON V CC = + 6 V 2 t OFF V CC = + 2 V t OFF V CC = + 6 V Switching Time vs. Temperature t ON /t OFF t bbm - Switching Time (ns) DG t bbm V CC = + 3 V 8 6 t bbm V CC = + 5 V 4 t bbm V CC = + 2 V 2 t bbm V CC = + 6 V Switching Time vs. Temperature 6 L OSS, O IRR, X TALK (db) = 6 V = V R L = 5 LOSS OIRR X TALK (Adjacent) Charge Injection (PC) V CC = 3 V V CC = 5 V V CC = 7.6 V T = 25 C C L = nf V CC = 2 V K M M M G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Source Volts DG9236 BCFE-C Charge Injection Measured at Drain C L = nf Document Number: 6749 S-598-Rev. B, 25-Apr- 7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

8 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I pos V V I pos V + 6 V Power Supply Current (na).. I pos V + 5 V I pos V + 2 V V IN (V) Supply Current vs. V IN and Temperature V T - Switching Threshold (V) V + - Supply Voltage (V) Switching Threshold (Lower) vs. Single Supply Voltage DG 9236 = 3.2 V R L = 6 V Signal = V RMS THD (%)... Frequency (Hz) THD vs. Frequency TEST CIRCUITS A or A SA or S2A V AX VCC V 5 % t r < 5 ns t f < 5 ns 5 Ω SB or S2B V SA or V S2A 9 % 9 % D or D2 V O V O 5 % 3 Ω 35 pf V t ON t OFF SA or S2A ON Figure. Enable Switching Time 8 Document Number: 6749 S-598-Rev. B, 25-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

9 TEST CIRCUITS 5 Ω A A SxA - SxB V A,A V CC V 5 % t r < 5 ns t f < 5 ns V SxA or V SxB 8 % D or D2 V O V O 3 Ω 35 pf V t D Figure 2. Break-Before-Make V + t r < 5 ns t f < 5 ns R g A or A SxA or SxB V + V AX V CC V OFF ON OFF V g D or D2 V O V O ΔV O C L nf Charge Injection = ΔV O X C L Figure 3. Charge Injection V + Network Analyzer Network Analyzer A or A SA or S2A V IN V g R g = 5 Ω A A V + SxA or SxB V IN V g R g = 5 Ω D or D2 V OUT D or D2 V OUT 5 Ω 5 Ω Insertion Loss = 2 log V OUT V IN Off Isolation = 2 log V OUT V IN Figure 4. Insertion Loss Figure 5. Off-Isolation Document Number: 6749 S-598-Rev. B, 25-Apr- 9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

10 TEST CIRCUITS Network Analyzer A or A SA or S2A D or D2 5 Ω SB or S2B V IN V OUT V g R g = 5 A or A SA or S2A to S2A or S2B Impedance Analyzer 5 Ω V- D or D2 Cross Talk = 2 log VOUT V IN Figure 6. Crosstalk V- Figure 7. Source/Drain Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?6749. Document Number: 6749 S-598-Rev. B, 25-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

11 Package Information MINI QFN-L CASE OUTLINE DIM MILLIMETERS INCHES MIN. NAM. MAX. MIN. NAM. MAX. A A b c.5 or.27 REF ().6 or.5 REF () D E e.4 BSC.6 BSC L L Note () The dimension depends on the leadframe that assembly house used. ECN T6-63-Rev. B, 6-May-6 DWG: 5957 Revision: 6-May-6 Document Number: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

12 PAD Pattern RECOMMENDED MINIMUM PADS FOR MINI QFN L.7 (.669) 9 x.563 (.22).663 (.26).2 (.79) 2. (.827).4 (.57) Pitch x.225 (.89) Mounting Footprint Dimensions in mm (inch) Document Number: Revision: 5-Mar-

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