Precision Monolithic Quad SPST CMOS Analog Switches

Transcription

1 Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix DG1411, DG1412, and DG1413 offer low on-resistance of 1.5. The low and flat resistance over the full signal range ensures excellent linearity and low signal distortion. The new CMOS platform provides low power dissipation, minimized parasitic capacitance, and low charge injection. The devices operate from either a single 4.5 to 24 power supply, or from dual ± 4.5 to ± 15 power supplies. The analog switches don't require a L logic supply, while all digital inputs have.8 and 2 logic thresholds to ensure low-voltage TTL / CMOS compatibility. The DG1411, DG1412, and DG1413 are bi-directional and support analog signals up to the supply voltage when on, and block them when off. The devices each feature four independently selectable SPST switches. The DG1411 is normally closed, while the DG1412 is normally open. The DG1413 has two normally open and two normally closed switches with guaranteed break-before-make operation. Combined with fast ns switching times, the improved performance of the DG1411, DG1412, and DG1413 make the devices ideal for signal switching and relay replacement in data acquisition, industrial control and automation, communication, and A/ systems, in addition to medical instrumentation and automated test equipment. The switches are available in RoHS-compliant, halogen-free TSSOP16 and QFN16 4 mm by 4 mm packages. FEATURES 35 supply max. rating On-resistance: 1.5 On-resistance flatness:.3 Channel to channel ON-resistance match:.1 Supports single and dual supply operation Fully specified at ± 15, ± 5, and +12 Integrated L supply 3 logic compatible Low parasitic capacitance: C S(OFF) : 11 pf, C D(ON) : 87 pf Rail to rail signal handling Material categorization: For definitions of compliance please see BENEFITS Low insertion loss Low distortion Break-before-make switching Low charge injection over the full signal range APPLICATIONS Medical and Healthcare equipment Data acquisition system Industrial control and automation Test and measurement equipment Communication systems Battery powered systems Sample and hold circuits Audio and video signal switching Relay replacement FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG1411 D1 IN1 IN2 D DG1411EN QFN-16 (4 mm x 4 mm) DG1411EQ TSSOP S S Top iew GND 3 N.C. S4 4 9 S3 IN1 D1 S IN2 D2 S2 + Top iew GND S4 D N.C. S3 D IN4 8 9 IN3 D4 IN4 IN3 D3 TRUTH TABLE - DG1411 LOGIC SWITCH On 1 Off Notes QFN EXPOSED PAD TIED TO - N.C. = NO CONNECT Switches Shown for Logic Input S Rev. B, 2-Dec-13 1 Document Number: 62749

2 FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG1412 D1 IN1 IN2 D2 DG1412EN QFN-16 (4 mm x 4 mm) S S Top iew GND 3 N.C. S4 4 9 S3 IN1 D1 S1 - GND Top iew IN2 D2 S2 + N.C. S4 D4 6 7 DG1412EQ TSSOP 11 S3 D IN4 8 9 IN3 D4 IN4 IN3 D3 TRUTH TABLE - DG1412 LOGIC SWITCH Off 1 On Notes QFN EXPOSED PAD TIED TO - N.C. = NO CONNECT Switches Shown for Logic Input FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG1413 D1 IN1 IN2 D DG1413EN QFN-16 (4 mm x 4 mm) DG1413EQ TSSOP S S Top iew GND 3 N.C. S4 4 9 S IN IN2 D D2 S S GND 5 Top iew 12 N.C. S S3 D4 7 D3 IN4 8 9 IN3 D4 IN4 IN3 D3 TRUTH TABLE - DG1413 LOGIC SWITCHES 1, 4 SWITCHES 2, 3 Off On 1 On Off Notes QFN EXPOSED PAD TIED TO - N.C. = NO CONNECT Switches Shown for Logic Input S Rev. B, 2-Dec-13 2 Document Number: 62749

3 DEICE OPTIONS PART NUMBER CONFIGURATION SWITCH FUNCTION TEMPERATURE RANGE PACKAGE DG1411EN-T1-GE4 Quad SPST NC -4 C to +125 C QFN (4 mm x 4 mm) 16L (ariation 2) DG1412EN-T1-GE4 Quad SPST NO -4 C to +125 C QFN (4 mm x 4 mm) 16L (ariation 2) DG1413EN-T1-GE4 Quad SPST NC/NO -4 C to +125 C QFN (4 mm x 4 mm) 16L (ariation 2) DG1411EQ-T1-GE3 Quad SPST NC -4 C to +125 C TSSOP-16 DG1412EQ-T1-GE3 Quad SPST NO -4 C to +125 C TSSOP-16 DG1413EQ-T1-GE3 Quad SPST NC/NO -4 C to +125 C TSSOP-16 ABSOLUTE MAXIMUM RATINGS ELECTRICAL PARAMETER CONDITIONS LIMITS UNIT + Reference to GND -.3 to Reference to GND +.3 to to Analog Inputs (S or D) - (-.3 ) to + (+.3 ) Digital Inputs GND (-.3 ) to + (+.3 ) TSSOP-16, T A = 25 C 19 Maximum Continuous Switch Current QFN (4 mm x 4 mm) 16L, T A = 25 C 25 TSSOP-16, T A = 125 C 9 ma QFN (4 mm x 4 mm) 16L, T A = 125 C Maximum Pulse Switch Current Pulse at 1 ms, % duty cycle 5 Thermal Resistance TSSOP QFN (4 mm x 4 mm) 16L 32 C/W Temperature Operating Temperature -4 to 125 Max. Operating Junction Temperature 15 Operating Junction Temperature 125 C Storage Temperature -65 to 15 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE ELECTRICAL MINIMUM MAXIMUM UNIT IN ± 4.5 ± 16.5 S Rev. B, 2-Dec-13 3 Document Number: 62749

4 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED + = 15, - = -15 INH = 2, INL = C -4 C to +85 C -4 C to +125 C TYP./MAX. Analog Switch Analog Signal Range ANALOG - to + - Drain-Source R S = ±, I S = - ma; see fig Typ. On-Resistance DS(on) + = +13.5, - = Max ON-Resistance Flatness R flat(on) S = ±, I S = - ma Max Typ. ON-Resistance Matching R DS(on) Max. + = +16.5, - = ± Typ. Switch Off Leakage Current I S /I d(off) S = ±, D = ± ; see fig. 24 ±.55 ± 2 ± 12.5 Max. ± Typ. Channel On Leakage Current I d(on) S = D = ± ; see fig. 25 ± 2 ± 4 ± 35 Max. na Digital Control Input, High oltage INH min. Input, Low oltage INL max. Input Leakage I IN IN = GND or Typ. - - ±.1 Max. μa Digital Input Capacitance C IN Typ. pf Dynamic Characteristics Break-Before-Make Time t S1 = S2 =, see fig. 31; Typ. OPEN R L = 3, C L = 35 pf - - Min. Turn-On Time t ON S =, see fig Typ. Max. ns Turn-Off Time t OFF R L = 3, C L = 35 pf Typ Max. C Charge Injection Q L = 1 nf, R GEN =, S = INj see fig Typ. pc Off Isolation OIRR C L = 5 pf, R L = 5, khz Typ. Cross Talk X TALK C L = 5 pf, R L = 5, 1 MHz Typ. db Insertion Loss f = 1 MHz, R L = 5, C L = 5 pf Typ. Total Harmonic Distortion THD R L = 1, 15 p-p, f = 2 Hz to 2 khz Typ. % Bandwidth, -3dB BW C L = 5 pf, R L = Typ. MHz Source Off Capacitance C S(off) Typ. Drain Off Capacitance C D(off) f = 1 MHz, S = Typ. pf Drain On Capacitance C D(on) Typ. Power Requirements Power Supply Range GND = ± 4.5/± 16.5 min./max. Power Supply Current I+ Digital Inputs or + + = +16.5, - = IN1 = IN2 = IN3 = IN4 = 5 I- Digital Inputs or Typ Max Typ Max Typ Max. UNIT μa S Rev. B, 2-Dec-13 4 Document Number: 62749

5 ELECTRICAL CHARACTERISTICS - SINGLE 12 SUPPLY PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED + = 12, - = INH = 2, INL = C -4 C to +85 C -4 C to +125 C TYP./MAX. UNIT Analog Switch Analog Signal Range ANALOG to + Drain-Source R S = to, I S = - ma; Typ. On-Resistance DS(on) see fig. 23, + =.8, - = Max Typ. ON-Resistance Flatness R flat(on) S = to, I S = - ma Max Typ. ON-Resistance Matching R on Max. + =.8, - = ± Typ. Switch Off Leakage Current I S /I d(off) S = 1 /, D = / see fig. 24 ±.55 ± 2 ± 12.5 Max. na Channel On Leakage Current I d(on) S = D = 1 / ; see fig. 25 ± Typ. ± 1.5 ± 4 ± 3 Max. Digital Control Input, High oltage INH Min. Input, Low oltage INL Max. Input Leakage I IN IN = GND or Typ. - - ±.1 Max. μa Digital Input Capacitance C IN Typ. pf Dynamic Characteristics Break-Before-Make Time t S1 = S2 = 8 ; see fig. 31, Typ. OPEN R L = 3, C L = 35 pf Min. Turn-On Time t ON S = 8 ; see fig. 3, Typ. Max. ns Turn-Off Time t OFF R L = 3, C L = 35 pf Typ Max. C Charge Injection Q L = 1 nf, R GEN =, S = 6 INj see fig Typ. pc Off Isolation OIRR khz Typ. R L = 5, C L = 5 pf Cross Talk X TALK 1 MHz Typ. db Insertion Loss f = 1 MHz, R L = 5, C L = 5 pf Typ. Bandwidth, -3dB BW R L = 5, C L = 5 pf Typ. MHz Source Off Capacitance C S(off) Typ. Drain Off Capacitance C D(off) f = 1 MHz, S = Typ. pf Drain On Capacitance C D(on) Typ. Power Requirements Power Supply Range GND =, - = ± 5/± 16.5 min./max. Power Supply Current I+ Digital Inputs or + + = 13.2 IN1 = IN2 = IN3 = IN4 = Typ Max Typ Max. μa S Rev. B, 2-Dec-13 5 Document Number: 62749

6 ELECTRICAL CHARACTERISTICS - DUAL ± 5 SUPPLIES PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED + = 5, - = -5 INH = 2, INL = C -4 C to +85 C -4 C to +125 C TYP./MAX. UNIT Analog Switch Analog Signal Range ANALOG to + Drain-Source R S = ± 4.5, I S = - ma; see fig. 23, Typ. On-Resistance DS(on) + = +4.5, - = Max. ON-Resistance Flatness R flat(on) S = ± 4.5, I S = - ma Typ Max Typ. ON-Resistance Matching R on Max. + = +5.5, -= -5.5, ± Typ. Switch Off Leakage Current I S /I d(off) S = +/- 4.5, D = -/+ 4.5 ; see fig. 24 ±.55 ± 2 ± 12.5 Max. na Channel On Leakage Current I d(on) S = D = ± 4.5 ; see fig. 25 ± Typ. ± 1 ± 4 ± 3 Max. Digital Control Input, High oltage INH Min. Input, Low oltage INL Max. Input Leakage I IN IN = GND or Typ. - - ±.1 Max. μa Digital Input Capacitance C IN Typ. pf Dynamic Characteristics Break-Before-Make Time t S1 = S2 = 3 ; see fig. 31, Typ. OPEN R L = 3, C L = 35 pf Min. Turn-On Time t ON S = 3 ; see fig. 3, Typ. Max. ns Turn-Off Time t OFF R L = 3, C L = 35 pf Typ Max. C Charge Injection Q L = 1 nf, R GEN =, S = ; INj see fig Typ. pc Off Isolation OIRR KHz Typ. R L = 5, C L = 5 pf Cross Talk X TALK 1 MHz Typ. db Insertion Loss f = 1 MHz, R L = 5, C L = 5 pf Typ. Bandwidth, -3dB BW R L = 5, C L = 5 pf Typ. MHz Source Off Capacitance C S(off) Typ. Drain Off Capacitance C D(off) f = 1 MHz, S = Typ. pf Drain On Capacitance C D(on) Typ. Power Requirements Power Supply Range GND = ± 4.5 /± 16.5 min./max. Power Supply Current I+ Digital Inputs or + + = +5.5, - = -5.5 I- Digital Inputs = or Typ Max Typ Max. μa S Rev. B, 2-Dec-13 6 Document Number: 62749

7 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) = + + = = = = = +5 - = -5 R ON - On-Resistance (Ω) = = T A = +25 C I S = -ma + = = = = R ON - On-Resistance (Ω) = = = +7 - = -7 T A = +25 C I S = -ma D - Analog oltage () D - Analog oltage () On-Resistance vs. Analog oltage (DS1) On-Resistance vs. Analog oltage (DS2) = C R ON - On-Resistance (Ω) = 8 + =.8 + = 12 R ON - On-Resistance (Ω) C + 25 C - 4 C 1 T A = +25 C I S = -ma + = = = = -15 I S = -ma D - Analog oltage () D - Analog oltage () On-Resistance vs. Analog oltage (DSS) On-Resistance vs. Temperature (± 15 ) C + 85 C C + 85 C R ON - On-Resistance (Ω) C C 1. + = = -5 I S = -ma R ON - On-Resistance (Ω) C C 1. + = = I S = -ma D - Analog oltage () D - Analog oltage () On-Resistance vs. Temperature (± 5 ) On-Resistance vs. Temperature (+12 ) S Rev. B, 2-Dec-13 7 Document Number: 62749

8 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) Leakage Current (na) I D(OFF), D =+ I S(OFF), S = - I D(OFF), D = - I S(OFF), S = + I D(ON), D = + Leakage Current (na) I D(OFF), D = +4.5 I S(OFF), S = -4.5 I D(OFF), D = -4.5 I S(OFF), S = +4.5 I D(ON), D = = = - 15 I D(ON), D = - -2 I D(ON), D = Temperature ( C) Temperature ( C) Leakage Current vs. Temperature (± 15 ) Leakage Current vs. Temperature (± 5 ) Leakage Current (na) I D(OFF), D = + I S(OFF), S = +1 I D(OFF), D = +1 I S(OFF), S = + I D(ON), D = + I D(ON), D = +1 I+ - Supply Current (μa) = = = = T A = + 25 C I+ per Logic Input + = = Temperature ( C) IN - () Leakage Current vs. Temperature (+12 ) Supply Current vs. Logic Level Q INJ - Charge Injection (pc) = = = = S - Analog oltage () + = = GND Charge Injection vs. Analog oltage t ON(EN), t OFF(EN) - Switching Time (ns) = +12, - =, t ON = +15, - = -15, t ON = +12, - =, t OFF + = +15, - = -15, t OFF Temperature ( C) Switching Time vs. Temperature S Rev. B, 2-Dec-13 8 Document Number: 62749

9 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) Loss 1.6 T A = +25 C - Loss, OIRR, X TALK (db) = = -15 OIRR X TALK T - Logic Threshold () IH IL K 1M M M 1G Frequency (Hz) + - Supply oltage () BW, OIRR, X TALK vs. Frequency Logic Threshold vs. Supply oltage + = = -5.5 T A = + 25 C I + + = = T A = + 25 C I + Supply Current (μa) I GND I - Supply Current (μa) I GND I Input Switching Frequency (Hz) Supply Current vs. Switching Frequency (± 5.5 ).1.1 Input Switching Frequency (Hz) Supply Current vs. Switching Frequency (± 16.5 ) THD + N (%) s=2 P-P s= P-P s=15 P-P + = = - 15 THD + N (%) s=2.5 P-P s= P-P + = = - 5 s=5 P-P Frequency (Hz) Frequency (Hz) THD vs. Frequency (± 15 ) THD vs. Frequency (± 5 ) S Rev. B, 2-Dec-13 9 Document Number: 62749

10 TEST CIRCUITS + Logic Input INH 5 % t r < 5 ns t f < 5 ns Switch Input Logic Input IN GND S + D Switch Output R L 3 Ω OUT C L 35 pf Switch Output INL.9 x OUT t ON t OFF C L (includes fixture and stray capacitance) R OUT = L D R L + R ON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. Fig. 1 - Switching Time + gen + R gen IN D + S OUT C L = 1 nf OUT IN On OUT Off On GND Q = OUT x C L IN = - + IN depends on switch configuration: input polarity determined by sense of switch. Fig. 2 - Charge Injection + nf nf + + S + IN, 2.4 D R L D GND, 2.4 IN S Meter HP4192A Impedance Analyzer or Equivalent Analyzer GND f = 1 MHz Off Isolation = 2 log D S Fig. 3 - Off-Isolation Fig. 4 - Channel Off/On Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S Rev. B, 2-Dec-13 Document Number: 62749

11 QFN 4x4-16L Case Outline Package Information (5) (4) ARIATION 1 ARIATION 2 DIM MILLIMETERS (1) INCHES MILLIMETERS (1) INCHES MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. A A A3.2 ref..8 ref..2 ref..8 ref. b D 4. BSC.157 BSC 4. BSC.157 BSC D e.65 BSC.26 BSC.65 BSC.26 BSC E 4. BSC.157 BSC 4. BSC.157 BSC E K.2 min..8 min..2 min..8 min. L N (3) Nd (3) Ne (3) Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between.15 mm and.3 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max..5 mm. ECN: S Rev. B, 22-Apr-13 DWG: 589 Revision: 22-Apr-13 1 Document Number: For technical questions, contact: powerictechsupport@vishay.com

12 Package Information TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A A A B C D E E e L L y - -. θ1 3 6 ECN: S-6192-Rev. D, 23-Oct-6 DWG: 5624 Document Number: Oct-6 1

13 PAD Pattern RECOMMENDED MINIMUM PAD FOR TSSOP (4.9).55 (1.4).281 (7.15).171 (4.35).14 (.35).26 (.65).12 (.3) Recommended Minimum Pads Dimensions in inches (mm) Revision: 2-Sep-11 1 Document Number: 6355

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