Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability

Size: px
Start display at page:

Download "Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability"

Transcription

1 Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability DG6, DG63 DESCRIPTION The DG6, DG63 is a low on-resistance, single-pole/ double-throw monolithic CMOS analog switch with negative signal swing capability. It is designed for low voltage applications. The DG6, DG63 is ideal for portable and battery powered equipment, requiring high performance and efficient use of board space. In additional to the low on-resistance (. Ω at.7 V), the DG63 has a typical off isolation and crosstalk of - 67 db and - 73 db respectively. The DG6, DG63 is built on s low voltage process. Break-before-make is guaranteed. As a committed partner to the community and the environment, manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured with % matte tin device terminations, the lead (Pb)-free -E3 suffix is being used as a designator. FEATURES Low voltage operation (.8 V to 5.5 V) Low on-resistance - R ON :. Ω at.7 V High bandwidth BENEFITS Negative signal swing capability Shunt switch to eliminate switching noise Simplified design with direct DC coupling Space saving SC-89 package APPLICATIONS Cellular phones Portable multimedia players PDAs and hand-held devices Laptop computers FUNCTIONAL BLOCK DIAGRAM AND P CONFIGURATION DG6 6 NO (Source ) NC (Source ) Ax TRUTH TABLE Logic NC NO ON OFF OFF ON Top View Device Marking: Dx Pin MERCIAL ORDERG FORMATION DG63 x = Date/Lot Traceability Code Temp Range Package Part Number 6 5 NO (Source ) - 4 C to 85 C SC-89 (SOT-666) Lead (Pb)-free with Tape and Reel DG6DX-T-E3 DG63DX-T-E3 3 4 NC (Source ) Top View Device Marking: Ex ABSOLUTE MAXIMUM RATGS T A = 5 C, unless otherwise noted Parameter Symbol Limit Unit -.3 to + 6 Reference a -.3 to ( +.3) V, NC, NO a ( - 6) to ( +.3) Continuous Current (NO, NC, pins) ± 5 Peak Current (Pulsed at ms, % duty cycle) ± 3 ma Storage Temperature D Suffix - 65 to 5 C Power Dissipation (Packages) b SC-89 c 7 mw Notes: a. Signals on NC, NO, or or exceeding will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate.5 mw/ C above 7 C. S-837-Rev. C, 9-Dec-8

2 DG6, DG63 SPECIFICATIONS ( = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified = 3 V, ± %,V =.5 V or.4 V e Temp. a Limits - 4 C to 85 C Min. b Typ. c Max. b.4 Analog Switch Analog Signal Range d V NO, V NC, V Full V Room..4 On-Resistance R ON Full.6 =.7 V, V = - V/ V/ V/ V R ON Match d ΔR ON Room. Ω I NO, I NC = ma R ON Flatness d R ON Room.3 Flatness Shunt Switch Resistance R SH I NO or I NC = ma, =.7 V, DG6 only Full 5 3 Ω I NO(off) Room - I Switch Off Leakage Current NC(off) = 3.3 V, Full - V NO, V NC = V/3 V, V = 3 V/ V Room - I (off) na Full - Channel-On Leakage Current I (on) = 3.3 V, V NO, V NC = V = V/3 V Room - Full - Digital Control Input High Voltage V H =.7 V to 3.6 V.4 =.8 V to. V. = 4. V to 5.5 V. Full =.8 V to. V V Input Low Voltage V L =.7 V to 3.6 V.5 = 4. V to 5.5 V.8 Input Capacitance C in Full 5 pf Input Current I L or I H V = or Full µa Dynamic Characteristics Turn-On Time t ON Room 34 6 Full 63 Turn-Off Time t OFF V NO or V NC =.5 V, R L = 5 Ω, C L = 35 pf Room 35 ns Full 37 Break-Before-Make Time t BBM Room 4 6 Charge Injection d (DG63) Q J C L = nf, V GEN = V, R GEN = Ω Room.4 pc Off-Isolation d OIRR R L = 5 Ω, C L = 5 pf, f = khz Room - 6 Crosstalk d X TALK DG6 Room - 67 db Off-Isolation d OIRR R L = 5 Ω, C L = 5 pf, f = khz Room - 67 Crosstalk d X TALK DG63 Room - 73 db N O, N C Off Capacitance d C NO(off) Room 36 C NC(off) V = or, f = MHz pf Channel-On Capacitance d C ON Room 95 Power Supply Power Supply Range V Power Supply Current I+ V = or.. µa Notes: a. Room = 5 C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. V = input voltage to perform proper function. Unit Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-837-Rev. C, 9-Dec-8

3 DG6, DG63 TYPICAL CHARACTERISTICS T A = 5 C, unless otherwise noted R ON - On-Resistance (Ω) =.7 V = 3. V = 3.6 V =.8 V =. V T = 5 C I S = ma = 4.5 V = 5. V = 5.5 V R ON - On-Resistance (Ω) =.7 V, I S = ma + 85 C + 5 C - 4 C V CO M - Analog Voltage (V) R ON vs. V and Supply Voltage V CO M - Analog Voltage (V) R ON vs. Analog Voltage and Temperature DG6 V = V DG63 V = V I+ - Supply Current (pa) V + = 5.5 V V + = 3.6 V I+ - Supply Current (pa) V + = 5.5 V V + = 3.6 V Temperature ( C) Supply Current vs. Temperature Temperature ( C) Supply Current vs. Temperature 4 Leakage Current (pa) =.7 V I NO(off) I (off) I (on) t ON, t OFF, - Switching Time (ns) t ON = 3. V t OFF = 3. V Temperature ( C) Leakage Current vs. Temperature Temperature ( C) Switching Time vs. Temperature and Supply Voltage S-837-Rev. C, 9-Dec-8 3

4 DG6, DG63 TYPICAL CHARACTERISTICS T A = 5 C, unless otherwise noted LOSS LOSS - - LOSS, OIRR, X TALK (db) X TALK OIRR - 6 DG6-7 = 3. V R L = 5 Ω - 8 K M M M G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency LOSS, OIRR, X TALK (db) X TALK OIRR DG63 = 3. V R L = 5 Ω - 8 K M M M G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 4 DG63 Q - Charge Injection (pc) 3 = 3 V = V = 5 V V T - Switching Threshold (V) V CO M - Analog Voltage (V) Charge Injection vs. Analog Voltage Supply Voltage (V) Switching Threshold vs. Supply Voltage TEST CIRCUITS Logic Input Switch Input NO or NC V Switch Output R L 5 Ω V OU T C L 35 pf Logic Input Switch Output + 3 V V V t ON 5 % t r < 5 ns t f < 5 ns.9 x V OU T t OFF C L (includes fixture and stray capacitance) R V OU T = V L CO M R L + R ON Figure. Switching Time Logic "" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. 4 S-837-Rev. C, 9-Dec-8

5 DG6, DG63 TEST CIRCUITS Logic Input 3 V t r < 5 ns t f < 5 ns V NO NO V O V V NC NC R L 5 Ω C L 35 pf V NC = V NO V O 9 % Switch Output V t D t D C L (includes fixture and stray capacitance) Figure. Break-Before-Make Interval V gen + R gen 3 V NC or NO C L V OUT V OUT On ΔV OUT Off On Q = ΔV OUT x C L depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection nf V,.4 V NC or NO R L V NC/ NO Off Isolation = log V Analyzer Figure 4. Off-Isolation S-837-Rev. C, 9-Dec-8 5

6 DG6, DG63 TEST CIRCUITS nf V,.4 V NC or NO Meter HP49A Impedance Analyzer or Equivalent f = MHz Figure 5. Channel Off/On Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg? S-837-Rev. C, 9-Dec-8

7 Package Information E D A B E L L3 b e L Pin. M C A B b e (4 ) NOTES:. All dimensions are in millimeters. A. Package outline exclusive of mold flash and metal burr. 3. Package outline inclusive of plating. 4. Maximum webbing flash remain.75 mm. A3 C Dim Min Nom Max Min Nom Max A A b b D E E e.5 BSC. BSC e..8 L L L ECN: S-5444 Rev. D, 8-Nov-5 DWG: 589 *Use millimeters as the primary measurement Document Number: Nov-5

8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive /65/EU of The European Parliament and of the Council of June 8, on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive /95/EC. We confirm that all the products identified as being compliant to Directive /95/EC conform to Directive /65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS79A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS79A standards. Revision: -Oct- Document Number: 9

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG9411 DESCRIPTION The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,

More information

DG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS

DG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS DG275, DG276 Low-Voltage, 0.4 R ON, Single SPST Analog Switch DESCRIPTION The DG275, DG276 are low voltage, single supply, dual SPST analog switches. Designed for high performance switching of analog signals,

More information

Low Voltage, Dual SPDT Analog Switch with Charge Pump

Low Voltage, Dual SPDT Analog Switch with Charge Pump Low Voltage, Dual SPDT Analog Switch with Charge Pump DG, DG, DG DESCRIPTION The DG, DG, DG are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining

More information

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Power-off Protection,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single

More information

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Power-off Isolation,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single

More information

0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch

0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch .4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch DESCRIPTION The DG2523 and DG2524 are four-channel single-pole double-throw (SPDT) analog switches. The DG2523 has two control inputs

More information

DG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS

DG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS 0.35-Ω Low-Voltage Dual SPDT Analog Switch DG2535/DG2536 DESCRIPTION The DG2535/DG2536 is a sub Ω (0.35 Ω at 2.7 V) dual SPDT analog switches designed for low voltage applications. The DG2535/DG2536 has

More information

DG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS

DG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch DESCRIPTION The DG2706 is a high speed, low voltage, low On-resistance, quad SPDT (single pole double throw) analog switch. It operates from a.6

More information

Low-Voltage Single-Supply, SPDT Analog Switch in SC-70

Low-Voltage Single-Supply, SPDT Analog Switch in SC-70 Low-oltage Single-Supply, SPDT Analog Switch in SC-7 DESCRIPTION The DG499 is a cost effective upgrade to other types of 499 low-voltage, single-pole/double-throw analog switches available in the industry

More information

Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection

Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection New Product DG/DG1 Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection DESCRIPTION The DG/DG1 are low-voltage single single-pole/ double-throw monolithic CMOS analog switches. Designed

More information

FEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number

FEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number Dual SPST Switches DG, DG8, DG9 DESCRIPTION The DG, DG8, and DG9 are low voltage, precision dual SPST switches that can be operated in a single supply or in a dual supply configuration power supply with

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch DG27B High-Speed Quad Monolithic SPST CMOS Analog Switch DESCRIPTION The DG27B high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage

More information

FEATURES BENEFITS APPLICATIONS. PARAMETER LIMIT UNIT Reference to GND V to +6 IN, COM, NC, NO a -0.3 to (V )

FEATURES BENEFITS APPLICATIONS. PARAMETER LIMIT UNIT Reference to GND V to +6 IN, COM, NC, NO a -0.3 to (V ) DESCRIPTION www.vishay.com.5, High Bandwidth, Dual SPDT Analog Switch The DGE is a low-voltage dual single-pole / double-throw monolithic CMOS analog switch. Designed to operate from. V to 5.5 V power

More information

DG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS

DG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS High-Speed, Low r ON, SPDT Analog Switch (2:1 Multiplexer) DG2307 DESCRIPTION The DG2307 is a single-pole-double-throw switch/2:1 mux designed for 2 to 5.5 V applications. Using proprietary sub-micro CMOS

More information

0.45, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability

0.45, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability 5, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability DESCRIPTION The is a dual SPDT low on-resistance switch designed to from a single 1.6 V to 5.5 V power supply. It is a bi-directional

More information

0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch

0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch .39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch DESCRIPTION The is a compact, low resistance, ultra-low distortion double pole double throw (DPST) analog switch. The features a flat.39

More information

Dual SPDT Analog Switch

Dual SPDT Analog Switch Dual SPDT Analog Switch DESCRIPTION The DG9236 is a CMOS, dual SPDT analog switch designed to operate from = 2.7 V to = 6 V max. operating, single supply. All control logic inputs have a guaranteed.8 V

More information

Precision Quad SPDT Analog Switch

Precision Quad SPDT Analog Switch Precision Quad SPDT Analog Switch DESCRIPTION The consist of four independently controlled single-pole double-throw analog switches. These monolithic switch is designed to control analog signals with a

More information

Precision Monolithic Quad SPST CMOS Analog Switches

Precision Monolithic Quad SPST CMOS Analog Switches Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The DG4 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining

More information

FEATURES APPLICATIONS

FEATURES APPLICATIONS .7, Low On Resistance, + V, +5 V, +3 V, ± 5 V, SPST Switches DESCRIPTION The DG9E and DG9E are monolithic single-pole-single-throw (SPST) analog switches. The DG9E has a normally closed function. The DG9E

More information

FEATURES DG721, TDFN-8 COM 2 7 IN 1 NO 1 1 NO 2. Top View. Device Marking for MSOP-8: 721

FEATURES DG721, TDFN-8 COM 2 7 IN 1 NO 1 1 NO 2. Top View. Device Marking for MSOP-8: 721 .8 V to. V, Dual SPST Switches DG, DG, DG DESCRIPTION The DG, DG and DG are precision dual SPST switches designed to operate from single.8 V to. V power supply with low power dissipation. The DG, DG and

More information

DG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES

DG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES High-Speed, Low r ON, SPDT Analog Switch (2:1 Multiplexer/Demultiplexer Bus Switch) DG3157 DESCRIPTION The DG3157 is a high-speed single-pole double-throw, low power, TTL-Compatible bus switch. Using sub-micro

More information

Automotive 125 C Analog Switch Dual DPDT / Quad SPDT, 0.37, 338 MHz Bandwidth

Automotive 125 C Analog Switch Dual DPDT / Quad SPDT, 0.37, 338 MHz Bandwidth Automotive 125 C Analog Switch Dual DPDT / Quad SPDT, 0.37, 338 MHz Bandwidth DESCRIPTION The, is a four-channel single-pole double-throw (SPDT) analog switch with two control inputs. It is also known

More information

Dual N-Channel 20 V (D-S) MOSFET

Dual N-Channel 20 V (D-S) MOSFET Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition

More information

Precision Monolithic Quad SPST CMOS Analog Switches

Precision Monolithic Quad SPST CMOS Analog Switches Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix

More information

DG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix.

DG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix. 1.5 On Resistance, ± 15 / +12 / ± 5, Quad SPST Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix

More information

Improved Quad CMOS Analog Switches

Improved Quad CMOS Analog Switches Improved Quad CMOS Analog Switches DESCRIPTION The analog switches are highly improved versions of the industry-standard DG2A, DG22. These devices are fabricated in proprietary silicon gate CMOS process,

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch High-Speed Quad Monolithic SPST CMOS Analog FEATURES BENEFITS APPLICATIONS Fast ing : 55 ns Low Charge Injection: 5 pc Low r DS(on) : 3 TTL/CMOS Compatible Low Leakage: pa Fast Settling Times Reduced ing

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET N7K N-Channel 6-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 6 at V GS = V G S T O-6 SOT - Top View N7K (7K)* * Marking Code Ordering Information: N7K-T N7K-T-E (Lead (Pb)-free) N7K-T-GE

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET Si3CDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES TrenchFET Power MOSFET Material categorization: For definitions

More information

P-Channel 8 V (D-S) MOSFET

P-Channel 8 V (D-S) MOSFET Si35CDS P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 8.35 at V GS = - 4.5 V - 5.8.48 at V GS = -.5 V - 5..65 at V GS = -.8 V - 4.3 TO-36 (SOT-3) nc FEATURES Halogen-free

More information

700 MHz, -3 db Bandwidth; Single SPDT Analog Switch

700 MHz, -3 db Bandwidth; Single SPDT Analog Switch 7 MHz, -3 db Bandwidth; Single SPDT Analog Switch DESCRIPTION is a low R ON, high bandwidth analog switch configured in single SPDT. It achieves 5 switch on resistance, greater than 7 MHz -3 db bandwidth

More information

Complementary N- and P-Channel 20 V (D-S) MOSFET

Complementary N- and P-Channel 20 V (D-S) MOSFET Complementary N- and P-Channel V (D-S) MOSFET Si6CX PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).396 at V GS =.5 V.5 N-Channel.56 at V GS =.5 V..56 at V GS =.8 V..75 nc.76 at V GS =.5 V.5.756

More information

Monolithic Dual SPST CMOS Analog Switch

Monolithic Dual SPST CMOS Analog Switch Monolithic Dual SPST CMOS Analog Switch DG00B DESCRIPTION The DG00B is a dual, single-pole, single-throw analog switch designed to provide general purpose switching of analog signals. This device is ideally

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) Q g (Typ.).8 at V GS = 1 V 46.5 6.1 at V GS = 6 V 41.6 9.3 nc.125 at V GS = 4.5 V 37.2 PowerPAK SO-8L 6.15 mm D 5.13 mm FEATURES

More information

P-Channel 40 V (D-S) 175 C MOSFET

P-Channel 40 V (D-S) 175 C MOSFET P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC

More information

N- and P-Channel 60-V (D-S), 175 C MOSFET

N- and P-Channel 60-V (D-S), 175 C MOSFET N- and P-Channel -V (D-S), 75 C MOSFET Si4559EY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel.55 at V GS = V ± 4.5.75 at V GS = 4.5 V ± 3.9 P-Channel -.2 at V GS = - V ± 3..5 at V GS = - 4.5

More information

Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).8 at V GS = 4.5 V 8. at V GS =.5 V 8 nc SO-8 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power

More information

P-Channel 20 V (D-S) MOSFET with Schottky Diode

P-Channel 20 V (D-S) MOSFET with Schottky Diode P-Channel 20 V (D-S) MOSFET with Schottky Diode Si4823DY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 20 0.08 at V GS = - 4.5 V - 4. 0.75 at V GS = - 2.5 V - 3.3 SCHOTTKY PRODUCT SUMMARY

More information

Dual P-Channel 12-V (D-S) MOSFET

Dual P-Channel 12-V (D-S) MOSFET Dual P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -. at V GS = -.5 V -.5 a.5 nc. at V GS = -.5 V -.5 a. at V GS = -.8 V - 3.5 PowerPAK SC-7- Dual FEATURES Halogen-free

More information

N- and P-Channel 20-V (D-S) MOSFET

N- and P-Channel 20-V (D-S) MOSFET N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).8 at V GS =.5 V 3. N-Channel. at V GS =.5 V..8 at V GS =.8 V.3.5 at V GS = -.5 V -. P-Channel -. at V GS = -.5 V -.8.3 at

More information

Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET Dual P-Channel 2-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = - 4.5 V - 4-2 8.94 at V GS = - 2.5 V - 4 FEATURES Halogen-free Option Available TrenchFET Power

More information

Linear Optocoupler for Optical DAA in Telecommunications, High Performance

Linear Optocoupler for Optical DAA in Telecommunications, High Performance Linear Optocoupler for Optical DAA in Telecommunications, High Performance FEATURES K A 1 2 K1 K2 8 K 7 A 2 mm high SMD package High sensitivity (K1) at low operating LED current Couples AC and DC signals

More information

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DG9E High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DESCRIPTION The DG9E is monolithic CMOS dual single-pole / double-throw (SPDT) analog switches. It is specifically designed for low-voltage,

More information

P-Channel 30 V (D-S) 175 C MOSFET

P-Channel 30 V (D-S) 175 C MOSFET P-Channel 3 V (D-S) 75 C MOSFET SUB75P3-7, SUP75P3-7 PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.7 at V GS = - V ± 75-3. at V GS = - 4.5 V ± 75 FEATURES Compliant to RoHS Directive 22/95/EC Available

More information

3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers

3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers DG148E, DG149E 3.9, 8-Channel / Dual 4-Channel, ± 15, +12, ± 5 Precision Multiplexers DESCRIPTION The DG148E is a precision analog multiplexer comprising eight single-ended channels. The DG149E is a dual

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET N-Channel -V (D-S) MOSFET DTS4 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).58 at V GS = V.6.7 at V GS = 4.5 V.6 TO-6 (SOT-). nc FEATURES Halogen-free According to IEC 649-- Definition TrenchFET

More information

Automotive P-Channel 20 V (D-S) 175 C MOSFET

Automotive P-Channel 20 V (D-S) 175 C MOSFET Automotive P-Channel 2 V (D-S) 75 C MOSFET SQ23ES PRODUCT SUMMARY V DS (V) - 2 R DS(on) ( ) at V GS = - 4.5 V.2 R DS(on) ( ) at V GS = - 2.5 V.8 I D (A) - 3.9 Configuration Single FEATURES Halogen-free

More information

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET P-Channel -V (D-S) MOSFET DTE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V -. -.7 at V GS = -.5 V - 3.6 FEATURES Halogen-free RoHS COMPLIANT TO-6AA (TO-9) S* S G G D 3 Top View D P-Channel

More information

Dual P-Channel 30 V (D-S) MOSFET

Dual P-Channel 30 V (D-S) MOSFET SiA95DJ Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) - 3.87 at V GS = - V -.5 a 3. nc.5 at V GS = -.5 V -.5 a PowerPAK SC-7- Dual FEATURES Halogen-free According

More information

Dual P-Channel 12-V (D-S) MOSFET

Dual P-Channel 12-V (D-S) MOSFET New Product Dual P-Channel -V (D-S) MOSFET SiA93ADJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -.8 at V GS = -.5 V -.5 a 8. nc. at V GS = -.5 V -.5 a.5 at V GS = -.8 V -.5 a PowerPAK SC-7-

More information

Single-Line ESD Protection in SOT-23

Single-Line ESD Protection in SOT-23 Single-Line ESD Protection in FEATURES 3 Single-line ESD-protection device ESD-protection acc. IEC 61000-4-2 contact discharge air discharge 1 2 20421 20512 1 Space saving package AEC-Q101 qualified e3-

More information

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET N-Channel -V (D-S) MOSFET 3 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) I D (A). at V GS = V. at V GS = V 7.5 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature Low Thermal Resistance Package Available

More information

Small Signal Zener Diodes

Small Signal Zener Diodes Small Signal Zener Diodes FEATURES Zener voltage specified at 5 μa Maximum delta V Z given from μa to μa Very high stability Low noise AEC-Q qualified Material categorization: For definitions of compliance

More information

Dual N-Channel 60-V (D-S) MOSFET

Dual N-Channel 60-V (D-S) MOSFET Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).38 at V GS = V 7..3 at V GS =. V.8 9. nc SO-8 FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power

More information

Glass Passivated Power Voltage-Regulating Diodes

Glass Passivated Power Voltage-Regulating Diodes Z4KE0A thru Z4KE200A Glass Passivated Power Voltage-Regulating Diodes DO-204AL (DO-4) FEATURES Plastic MELF package Ideal for automated placement Glass passivated chip junction Low Zener impedance Low

More information

0.5 pc Charge Injection, 100 pa Leakage, Dual SPDT Analog Switch

0.5 pc Charge Injection, 100 pa Leakage, Dual SPDT Analog Switch 0.5 pc Charge Injection, pa Leakage, Dual SPDT Analog Switch DESCRIPTION The is an analog CMOS, dual SPDT switch, designed to operate from a +2.7 V to +12 V single supply or from ± 2.7 V to ± 5 V, dual

More information

FEATURES APPLICATIONS. Switches are shown for a Logic 0 Input

FEATURES APPLICATIONS. Switches are shown for a Logic 0 Input 2, Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches ESCRIPTION The G251, G252, and G253 are monolithic quad single-pole single-throw (SPST) analog switches that operate from

More information

Single Phase Rectifier Bridge, 1.9 A

Single Phase Rectifier Bridge, 1.9 A Single Phase Rectifier Bridge, 1.9 A VS- Series PRODUCT SUMMARY I O V RRM Package Circuit 1.9 A 1 V to 1 V Single phase bridge FEATURES Suitable for printed circuit board mounting Leads on standard 2.54

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode N45WS-G Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 8/K per 3" reel (8 mm tape), K/box 8/3K per 7" reel (8 mm tape), 5K/box FEATURES Silicon

More information

FEATURES G D S. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C

FEATURES G D S. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C N-Channel 6 V (D-S) Super Junction Power MOSFET DTP63SJ PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.35 at V GS = V 3 6.4 at V GS = 4.5 V FEATURES 75 C Junction Temperature TrenchFET II Power MOSFET

More information

Load Switch with Level-Shift

Load Switch with Level-Shift Si86DDL Load Switch with Level-Shift PRODUCT SUMMARY V IN (V DS ) (V) R DS(on) ( ) Max. I D (A).8 to DESCRIPTION. at V IN =. V..3 at V IN =. V.9.8 at V IN =.8 V.7 The Si86DDL includes a p- and n-channel

More information

Silicon PIN Photodiode

Silicon PIN Photodiode BPV Silicon PIN Photodiode DESCRIPTION 94 8390 BPV is a PIN photodiode with high speed and high radiant sensitivity in clear, T-¾ plastic package. It is sensitive to visible and near infrared radiation.

More information

Power MOSFET FEATURES. IRLZ44PbF SiHLZ44-E3 IRLZ44 SiHLZ44 T C = 25 C

Power MOSFET FEATURES. IRLZ44PbF SiHLZ44-E3 IRLZ44 SiHLZ44 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.028 Q g (Max.) (nc) 66 Q gs (nc) 12 Q gd (nc) 43 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D

More information

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600 DTU5N6 N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.25 at V GS = V 5 6.5 at V GS = 4.5 V 75 FEATURES TrenchFET II Power MOSFET TO-252 D G D S Top View S N-Channel MOSFET ABSOLUTE

More information

P- and N-Channel 4 V (D-S) MOSFET

P- and N-Channel 4 V (D-S) MOSFET P- and N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 4. 6 at V GS = V 6.7.24 at V GS = 4.5 V 5.8 5. P-Channel -4. 2 at V GS = - V - 6..52 at V GS = - 4.5

More information

Complementary N- and P-Channel 20 V (D-S) MOSFET

Complementary N- and P-Channel 20 V (D-S) MOSFET Complementary N- and P-Channel V (D-S) MOSFET Si6X PRODUCT SUMMARY V DS (V) ( ) I D (ma).7 at V GS =. V 6 N-Channel.8 at V GS =. V. at V GS =.8 V. at V GS = -. V - P-Channel -.6 at V GS = -. V -.7 at V

More information

Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET New Product Dual N-Channel -V (D-S) MOSFET SiA9EDJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =. V.. at V GS =. V.. nc PowerPAK SC-7- Dual FEATURES Halogen-free According to IEC

More information

Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES

Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES www.vishay.com Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces 2 746 MARKING (example only) XX 2052 YYY XX Bar = cathode marking YYY = type code (see table below) XX = date code 2057

More information

Silicon PIN Photodiode, RoHS Compliant

Silicon PIN Photodiode, RoHS Compliant BPW83 DESCRIPTION 94 8490 BPW83 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870

More information

2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch

2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch 2 Port, UB 2. High peed (48 Mbps) witch, DPDT Analog witch DG273 DECRIPTION The DG273 is 2 port high speed analog switch optimized for UB 2. signal switching. The DG273 switch is configured in DPDT. It

More information

High Voltage Glass Passivated Junction Plastic Rectifier

High Voltage Glass Passivated Junction Plastic Rectifier High Voltage Glass Passivated Junction Plastic Rectifier SUPERECTIFIER FEATURES Superectifier structure for high reliability application Cavity-free glass-passivated junction Low leakage current High forward

More information

Dual P-Channel 30 V (D-S) MOSFET

Dual P-Channel 30 V (D-S) MOSFET Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) - 3 R DS(on) () at V GS = - V.4 R DS(on) () at V GS = - 4.5 V.78 I D (A) per leg -5.4 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q Qualified

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si49DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 4 5 D FEATURES

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a, e Q g (Typ.). at V GS = V at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View Pin Top View FEATURES APPLICATIONS D 3 4 8 7 5 G Pin

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET SiSS23N P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2 3.3 mm.5 at V GS = -.5 V - 5 e.63 at V GS = - 2.5 V - 5 e.5 at V GS = -.8 V - 5 e 8 PowerPAK 22-8S 7 6 S S

More information

N- and P-Channel 20 V (D-S) MOSFET

N- and P-Channel 20 V (D-S) MOSFET N- and P-Channel V (D-S) MOSFET DTS5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel 99 at V GS = 4.5 V..4 at V GS =.5 V.9 P-Channel - 89 at V GS = - 4.5 V -.5 73 at V GS = -.5 V -.4 FEATURES Halogen-free

More information

Dual Common-Cathode Ultrafast Recovery Rectifier

Dual Common-Cathode Ultrafast Recovery Rectifier New Product UH0FCT& UHB0FCT Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES Oxide planar chip junction TO-0AB TO-63AB Ultrafast recovery times Soft recovery characteristics Low switching losses,

More information

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C N-Channel 6 V (D-S) Super Junction Power MOSFET DTK63SJ PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.35 at V GS = V 3 6.42 at V GS = 4.5 V FEATURES 75 C Junction Temperature TrenchFET II Power MOSFET

More information

Low Power, High Voltage SPST Analog Switches

Low Power, High Voltage SPST Analog Switches Low Power, High Voltage SPST Analog Switches DG67, DG68 DESCRIPTION The DG67 and DG68 are dual supply single-pole/singlethrow (SPST) switches. On resistance is max. and flatness is 2 max. over the specified

More information

Power MOSFET FEATURES. IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A

Power MOSFET FEATURES. IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A Power MOSFET IRFIB6N60A, SiHFIB6N60A PRODUCT SUMMARY V DS (V) 600 R DS(on) (Ω) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single TO-220 FULLPAK D G FEATURES Low Gate Charge

More information

Single-Line ESD Protection in SOT-23

Single-Line ESD Protection in SOT-23 Single-Line ESD Protection in 3 1 2 20421 MARKING (example only) XX YYY XX 20512 YYY = type code (see table below) XX = date code 20357 1 FEATURES Single-line ESD-protection device ESD-protection acc.

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-

More information

Silicon PIN Photodiode

Silicon PIN Photodiode BPVNF Silicon PIN Photodiode DESCRIPTION 640- BPVNF is a PIN photodiode with high speed and high radiant sensitivity in black, T-¾ plastic package with daylight blocking filter. Filter bandwidth is matched

More information

FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V 40 T A = 25 C (2) 4.

FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V 40 T A = 25 C (2) 4. Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single in-line package

More information

Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant

More information

Insulated Ultrafast Rectifier Module, 210 A

Insulated Ultrafast Rectifier Module, 210 A Insulated Ultrafast Rectifier Module, 2 A SOT-227 1 4 2 3 FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T J max.

More information

FEATURES TrenchFET Ⅱ Power MOSFET 100 % R g and UIS Tested Compliant to RoHS Directive 2011/65/EU PRODUCT SUMMARY APPLICATIONS

FEATURES TrenchFET Ⅱ Power MOSFET 100 % R g and UIS Tested Compliant to RoHS Directive 2011/65/EU PRODUCT SUMMARY APPLICATIONS 4 PRODUCT SUMMARY at V GS = V 8 nc at V GS = 4.5 V D FEATURES TrenchFET Ⅱ Power MOSFET % R g and UIS Tested Compliant to RoHS Directive 2/65/EU APPLICATIONS OR-ing Server DC/DC G G D S Top View S ABSOLUTE

More information

N-Channel 0 V (D-S) MOSFET

N-Channel 0 V (D-S) MOSFET N-Channel V (D-S) MOSFET 66SJ PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.).6 at V GS = V 53 4 nc.9 at V GS = 4.5 V 4 FEATURES TrenchFET II Power MOSFET % R g and UIS Tested APPLICATIONS

More information

P-Channel 1.8 V (G-S) MOSFET

P-Channel 1.8 V (G-S) MOSFET Si7DL P-Channel. V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).9 at V GS = -.5 V ±.9 -.5 at V GS = -.5 V ±.7.5 at V GS = -. V ±. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET

More information

Dual N-Channel 20 V (D-S) MOSFET

Dual N-Channel 20 V (D-S) MOSFET Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).35 at V GS = 4.5 V..36 at V GS =.5 V SOT-363 SC-7 (6-LEADS).9 FEATURES Halogen-free According to IEC 649-- Definition

More information

4-Channel EMI-Filter with ESD-Protection FEATURES VEMI45AA-HNH VEMI45AA-HNH-GS MOLDING COMPOUND FLAMMABILITY RATING

4-Channel EMI-Filter with ESD-Protection FEATURES VEMI45AA-HNH VEMI45AA-HNH-GS MOLDING COMPOUND FLAMMABILITY RATING 4-Channel EMI-Filter with ESD-Protection 2383 8 7 6 5 9 1 2 3 4 MARKING (example only) Dot = pin 1 marking Y = type code (see table below) XX = date code 2522 YXX 2719 FEATURES Ultra compact LLP1713-9L

More information

Silicon PIN Photodiode, RoHS Compliant

Silicon PIN Photodiode, RoHS Compliant Silicon PIN Photodiode, RoHS Compliant DESCRIPTION 948642 is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET Si3DDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) Max. I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES Halogen-free According to IEC 69-- Definition TrenchFET

More information

N-Channel 25 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET N-Channel 25 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

More information

Photovoltaic Solar Cell Protection Schottky Rectifier

Photovoltaic Solar Cell Protection Schottky Rectifier Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V F =.3 V at I F = 5. A TMBS FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation

More information

Dual P-Channel 30-V (D-S) MOSFET

Dual P-Channel 30-V (D-S) MOSFET Dual P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = - V - 7. - 3.4 at V GS = - 4.5 V - 5.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power

More information