Photovoltaic Solar Cell Protection Schottky Rectifier
|
|
- Shanna Hunt
- 5 years ago
- Views:
Transcription
1 Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V F =.3 V at I F = 5. A TMBS FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation High forward surge capability ESD capability Solder dip 275 C max. s, per JESD 22-B6 T J 2 C max. in solar bypass mode application Material categorization: For definitions of compliance please see PRIMARY CHARACTERISTICS I F(AV) 2 A V RRM 45 V I FSM 25 A V F at I F = 2 A.42 V T OP max. (AC mode) 5 C T J max. (DC forward current) 2 C Package Diode variation Single die TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: Molding compound meets UL 94 V- flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-2 and JESD 22-B2 M3 suffix meets JESD 2 class A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS ( unless otherwise noted) PARAMETER SYMBOL VSB245 UNIT Device marking code V245 Maximum repetitive peak reverse voltage V RRM 45 V Maximum average forward rectified current (fig. ) I F(AV) () 2 I F(AV) (2) 6.5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 25 A Operating junction temperature range T OP -4 to +5 C Storage temperature range T STG -4 to +75 C Junction temperature in DC forward current without reverse bias, t h T J (3) 2 C () With heatsink (2) With heatsink, free air (3) Meets the requirements of IEC 625 ed. 2 bypass diode thermal test Revision: 22-Nov-3 Document Number: 8939 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I F = 5. A.44 - I F = A.46 - Instantaneous forward voltage I F = 2 A.5.58 I F = 5. A V () F.3 - V I F = A.35 - I F = 2 A.42.5 Reverse current V R = 45 V I (2) μa R.9 35 ma Typical junction capacitance 4. V, MHz C J 25 - pf () Pulse test: 3 μs pulse width, % duty cycle (2) Pulse test: 4 ms pulse width THERMAL CHARACTERISTICS ( unless otherwise noted) PARAMETER SYMBOL VSB245 UNIT R () JA 55 Thermal resistance C/W R () JL 3.5 Typical thermal resistance R (2) JL 2.5 C/W () Without heatsink, free air; units mounted on PCB with 2 mm x 2 mm copper pad areas at 9.5 mm lead length (2) Leads clipped at 3 mm lead length from plastic body on 7. cm x 2.2 cm x.9 cm x 2 heatsink IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS ( unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE JESD22-A4 Human body model (contact mode) C = 5 pf, R =.5 3B > 8 kv JESD22-A5 Machine model (contact mode) C = 2 pf, R = V C C > 4 V IEC (2) Air discharge mode () C = 5 pf, R = 33 4 > 5 kv () Immunity to IEC air discharge mode has a typical performance > 25 kv (2) System ESD standard ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE / " diameter paper tape and reel / Ammo pack packaging Revision: 22-Nov-3 2 Document Number: 8939 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 Junction Capacitance (pf) RATINGS AND CHARACTERISTICS CURVES ( unless otherwise noted) 8 DC Forward Current (A) Free Air, without Heatsink Instantaneous Forward Current (A) T A = 5 C T A = C Ambient Temperature ( C) Fig. - Forward Current Derating Curve Instantaneous Forward Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics 2 Percentage of Rated Current (%) DC Current with Heatsink Instantaneous Reverse Current (µa) T A = 5 C T A = C Ambient Temperature ( C) Fig. 2 - Rated Forward Current vs. Ambient Temperature Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Leakage Characteristics Average Power Loss (W) D =. D =.2 D =.5 D =.3 D =.8 T D =. T J = 25 C f =. MHz V sig = 5 mv p-p 2 D = t p /T t p Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics. Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance Revision: 22-Nov-3 3 Document Number: 8939 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 PACKAGE OUTLINE DIMENSIONS in inches (millimeters). (25.4) MIN..36 (9.).34 (8.6).36 (9.).34 (8.6).52 (.32).48 (.22) DIA.. (25.4) MIN. Revision: 22-Nov-3 4 Document Number: 8939 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2/65/EU of The European Parliament and of the Council of June 8, 2 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 22/95/EC. We confirm that all the products identified as being compliant to Directive 22/95/EC conform to Directive 2/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS79A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS79A standards. Revision: 2-Oct-2 Document Number: 9
Photovoltaic Solar Cell Protection Schottky Rectifier
VSB545-M3 Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V F =.33 V at I F = 5. A TMBS FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency
More informationPhotovoltaic Solar Cell Protection Schottky Rectifier
Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V F = 0.30 V at I F = 5.0 A FEATURES TMBS Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation
More informationHigh Voltage Glass Passivated Junction Plastic Rectifier
High Voltage Glass Passivated Junction Plastic Rectifier SUPERECTIFIER FEATURES Superectifier structure for high reliability application Cavity-free glass-passivated junction Low leakage current High forward
More informationSMD Photovoltaic Solar Cell Protection Rectifier
SMD Photovoltaic Solar Cell Protection Rectifier esmp Series 2 Anode Cathode Anode 2 FEATURES Very low profile - typical height of. mm Ideal for automated placement Glass passivated pellet chip junction
More informationHigh Current Density Surface Mount Dual Common Cathode Schottky Rectifiers
High Current Density Surface Mount Dual Common Cathode Schottky Rectifiers FEATURES esmp Series Very low profile - typical height of. mm Available Ideal for automated placement Low forward voltage drop,
More informationSMD Photovoltaic Solar Cell Protection Schottky Rectifier
SSP4S SMD Photovoltaic Solar Cell Protection Schottky Rectifier PRIMARY CHARACTERISTICS I F(AV) A V RRM 40 V I FSM 80 A E AS 0 mj V F at I F = A 0.43 V T J max. 50 C Package Diode variations Single die
More informationFEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V 40 T A = 25 C (2) 4.
Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single in-line package
More informationSMD Photovoltaic Solar Cell Protection Schottky Rectifier
SS5P3S SMD Photovoltaic Solar Cell Protection Schottky Rectifier esmp Series Anode Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 5 A V RRM 30 V I FSM 80 A E AS 0 mj V F at I F = 5 A 0.4 V T J max. 50 C
More informationSurface Mount ESD Capability Rectifiers
Surface Mount ESD Capability Rectifiers Top View SlimSMA DO-22AC PRIMARY CHARACTERISTICS I F(AV) 3.0 A V RRM V, 200 V, 400 V, 600 V I FSM 40 A V F at I F = 3.0 A (T A = 25 C) 0.86 V I R 0 μa T J max. 75
More informationHigh Current Density Surface Mount Dual Common-Cathode Schottky Rectifier
High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier esmp Series 2 TO-277A (SMPC) Anode Cathode Anode 2 FEATURES Very low profile - typical height of. mm Ideal for automated placement
More informationHigh Current Density Surface Mount Glass Passivated Rectifiers
SPB, SPD, SPG, SPJ, SPK, SPM High Current Density Surface Mount Glass Passivated Rectifiers esmp Series DO-22AA (SMP) FEATURES Very low profile - typical height of. mm Available Ideal for automated placement
More informationTrench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.33 V at I F = A TMBS 2 VBT6045CBP PIN PIN 2 HEATSIN PRIMARY CHARACTERISTICS I F(AV) 2 x 30 A V RRM 45 V I FSM
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V5PL50 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.8 V at I F = 5 A TMBS esmp Series Anode Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 5 A V RRM 50 V I
More informationUF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier
UF400, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier FEATURES Glass passivated chip junction Ultrafast reverse recovery time Low forward voltage drop Low switching losses,
More informationEnhanced isocink+ Bridge Rectifiers
Enhanced isocink+ Bridge Rectifiers + ~ ~ - - ~ ~ + isocink+ Case Style BU + ~ ~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested
More informationGlass Passivated Ultrafast Plastic Rectifier
Glass Passivated Ultrafast Plastic Rectifier SUPERECTIFIER DO-204AL (DO-4) FEATURES Superectifier structure for high reliability condition Cavity-free glass-passivated junction Ideal for printed circuit
More informationDual Common Cathode Schottky Rectifier
Dual Common Cathode Schottky Rectifier TO-220AB MBR20xxCT PIN PIN 3 CASE 2 3 ITO-220AB 2 3 MBRF20xxCT PIN PIN 3 2 FEATURES Power pack Guardring for overvoltage protection Low power loss, high efficiency
More informationTrench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
www.vishay.com Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.28 V at I F = 5 A TMBS ITO-220AC PIN PIN 2 PRIMARY CHARACTERISTICS I F(DC) 40 A V RRM 45 V I FSM
More informationEnhanced isocink+ Bridge Rectifiers
Enhanced isocink+ Bridge Rectifiers isocink+ - ~ ~ + Case Style BU * Tested to UL standard for safety electrically isolated semiconductor devices. UL 557 th edition. Dielectric tested to maximum case,
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.34 V at I F = 4 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 8.0 A V RRM
More informationGlass Passivated Junction Plastic Rectifier
N400GP, N4002GP, N4003GP, N4004GP, N4005GP, N4006GP, N4007GP Glass Passivated Junction Plastic Rectifier SUPERECTIFIER DO-204AL (DO-4) FEATURES Superectifier structure for high reliability application
More informationDual High Voltage Trench MOS Barrier Schottky Rectifier
V300C, VI300C Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.455 V at I F = 5 A TO-220AB 2 3 V300C PIN PIN 2 PIN 3 CASE TMBS TO-262AA K 2 3 VI300C PIN PIN 2 PIN 3 K FEATURES
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.29 V at I F = 5 A TMBS esmp Series 2 Anode Cathode Anode 2 PRIMARY CHARACTERISTICS I F(AV) 25 A V RRM 60 V I FSM
More informationTrench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
www.vishay.com Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.4 V at I F = 5 A VBT045BP-E3 TMBS DESIGN SUPPORT TOOLS Models Available PRIMARY CHARACTERISTICS
More informationGeneral Purpose Plastic Rectifier
General Purpose Plastic Rectifier N400 thru N4007 DO-204AL (DO-4) FEATURES Low forward voltage drop Low leakage current High forward surge capability Solder dip 275 C max. s, per JESD 22-B6 Compliant to
More informationSurface Mount Trench MOS Barrier Schottky Rectifier
Surface Mount Trench MOS Barrier Schottky Rectifier TMBS SMPA TM Top View Bottom View DO-22BC (SMPA) PRIMARY CHARACTERISTICS I F(AV) 3.0 A V RRM 50 V I FSM 80 A V F at I F = 3.0 A (T A = 25 C) 0.40 V T
More informationDual Common-Cathode Ultrafast Recovery Rectifier
New Product UH0FCT& UHB0FCT Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES Oxide planar chip junction TO-0AB TO-63AB Ultrafast recovery times Soft recovery characteristics Low switching losses,
More informationUltrafast Avalanche SMD Rectifier
Ultrafast Avalanche SMD Rectifier DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Glass passivated pallet chip junction Low reverse current Low forward voltage Soft recovery characteristic
More informationSurface Mount Trench MOS Barrier Schottky Rectifier
Surface Mount Trench MOS Barrier Schottky Rectifier TMBS SMPA TM Top View Bottom View DO-22BC (SMPA) FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky
More informationUltrafast Rectifier V AC 1500 V
Ultrafast Rectifier FEATURES TO-0AC ITO-0AC Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency High forward surge capability UG8xT PIN CASE TO-63AB
More informationFast Avalanche SMD Rectifier
BYG2K-E3/HE3, BYG2M-E3/HE3 Fast Avalanche SMD Rectifier DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Glass passivated pallet chip junction Low reverse current Soft recovery
More informationHigh Current Density Surface Mount Schottky Barrier Rectifiers
High Current Density Surface Mount Schottky Barrier Rectifiers esmp Series 2 Anode Cathode Anode 2 FEATURES Very low profile - typical height of. mm Available Ideal for automated placement Low forward
More informationHigh Current Density Surface Mount Schottky Barrier Rectifiers
SSP3C, SSP4C High Current Density Surface Mount Schottky Barrier Rectifiers esmp Series 2 Anode FEATURES Very low profile - typical height of. mm Available Ideal for automated placement Low forward voltage
More informationHigh-Voltage Trench MOS Barrier Schottky Rectifier
V2050SG, VI2050SG High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.57 V at I F = 5 A TO-220AB V2050SG PIN PIN 2 PIN 3 CASE TMBS TO-262AA K 2 3 2 3 VI2050SG PIN PIN 2 PIN 3 K FEATURES
More informationHigh Current Density Surface Mount High Voltage Schottky Rectifiers
SSPH9, SSPH High Current Density Surface Mount High Voltage Schottky Rectifiers esmp Series 2 Anode Cathode Anode 2 FEATURES Power pack Available Very low profile - typical height of. mm Ideal for automated
More informationNew Product. High Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions PRIMARY CHARACTERISTICS V WM 1 V to 43 V V BR 11.1 V to 52.8 V P PPM 3 W P D 6. W I FSM 2 A T
More informationSurface Mount Trench MOS Barrier Schottky Rectifier
Surface Mount Trench MOS Barrier Schottky Rectifier TMBS esmp Series Top View Bottom View SlimSMA (DO-22AC) Cathode Anode FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement
More informationFEATURES. PARAMETER SYMBOL V8PAM10 UNIT Device marking code Maximum repetitive peak reverse voltage V RRM 100 V
Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier esmp Series Top View Bottom View Anode Cathode FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS
More informationDual High Voltage Trench MOS Barrier Schottky Rectifier
MBRF9CT-M3, MBRFCT-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS ITO-22AB 2 3 PIN PIN 2 PIN 3 PRIMARY CHARACTERISTICS I F(AV) 2 x 5. A V RRM 9 V, V I FSM 2 A V F.75 V T J max. 5 C Package
More informationHigh Current Density Surface Mount Dual Common Cathode Schottky Rectifier
High Current Density Surface Mount Dual Common Cathode Schottky Rectifier esmp Series K 2 K Anode Cathode Anode 2 FEATURES Very low profile - typical height of. mm Available Ideal for automated placement
More informationGlass Passivated Power Voltage-Regulating Diodes
Z4KE0A thru Z4KE200A Glass Passivated Power Voltage-Regulating Diodes DO-204AL (DO-4) FEATURES Plastic MELF package Ideal for automated placement Glass passivated chip junction Low Zener impedance Low
More informationSurface Mount Trench MOS Barrier Schottky Rectifier
Surface Mount Trench MOS Barrier Schottky Rectifier TMBS esmp Series Top View SlimSMA (DO-22AC) Cathode DESIGN SUPPORT TOOLS Models Available Bottom View PRIMARY CHARACTERISTICS Anode click logo to get
More informationFEATURES. Package. PARAMETER SYMBOL PB3506 PB3508 PB3510 UNIT Maximum repetitive peak reverse voltage V RRM V 35 T A = 25 C (2) 4.
PB356, PB358, PB35 Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single
More informationBYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT Ultrafast Rectifier
Ultrafast Rectifier TO-AC ITO-AC FEATURES Power pack Glass passivated pallet chip junction Ultrafast recovery time Low switching losses, high efficiency BYV9, UG8 Series BYV9F, UGF8 Series Low forward
More informationSurface Mount Glass Passivated Rectifier
Surface Mount Glass Passivated Rectifier DO-24AC (SMA) PRIMARY CHARACTERISTICS I F(AV) 2.0 A V RRM 200 V, 400 V, 600 V, 800 V, 00 V I FSM 50 A I R 5.0 μa V F at I F = 2.0 A (T A = 25 C) 0.90 V T J max.
More informationDual Common Cathode Ultrafast Rectifier
UGEBCT, UGECCT, UGEDCT Dual Common Cathode Ultrafast Rectifier PIN PIN 3 UGExCT PIN 2 CASE PRIMARY CHARACTERISTICS 2 3 I F(AV) 2 x 5.0 A V RRM 0 V, 50 V, 200 V I FSM 55 A t rr 25 ns V F 0.895 V T J max.
More informationSA5.0A thru SA170CA. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.0 V to 170 V V BR (uni-directional) 6.4 V to 209 V V BR (bi-directional) 6.4 V to 209 V P PPM 500 W P D 3.0 W I FSM
More informationHigh Current Density Surface Mount High Voltage Schottky Rectifier
High Current Density Surface Mount High Voltage Schottky Rectifier SS8PH9, SS8PH0 FEATURES esmp Series Very low profile - typical height of. mm Available Ideal for automated placement Guardring for overvoltage
More informationDual Common-Cathode Schottky Rectifier
Dual Common-Cathode Schottky Rectifier TO-220AB MBR25xxCT PIN 3 CASE 2 3 TO-263AB ITO-220AB 2 3 MBRF25xxCT PIN 3 FEATURES Guardring for overvoltage protection Lower power losses, high efficiency Low forward
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PWM2C High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TMBS esmp Series 2 SlimDPAK (TO-252AE) PIN K K FEATURES Very low profile - typical
More informationHigh Voltage Ultrafast Rectifier
UGxT, UGFxT, UGBxT High Voltage Ultrafast Rectifier FEATURES TO-AC ITO-AC Power pack Glass passivated chip junction Ultrafast recovery time Soft recovery characteristics Low switching losses, high efficiency
More informationDual High-Voltage Trench MOS Barrier Schottky Rectifier
V60D0C-M3, V60D0CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.36 V at I F = 5 A 2 TMBS esmp Series Top View K PIN V60D0C Bottom View K FEATURES Trench MOS Schottky technology
More informationSurface Mount Standard Rectifiers
Surface Mount Standard Rectifiers Top view esmp Series DO-29AB (SMF) PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 200 V, 400 V, 600 V I FSM 25 A V F at I F =.0 A (T A = 25 C) 0.85 V I R 5 μa T J max. 75 C
More informationEnhanced isocink+ Bridge Rectifiers
Enhanced isocink+ Bridge Rectifiers - ~ ~ + isocink+ Case Style BU PRIMARY CHARACTERISTICS Package BU I F(AV) 5 A V RRM 6 V, 8 V, V I FSM 2 A I R 5 μa V F at I F = 7.5 A.87 V T J max. 5 C Circuit configuration
More informationFast Switching Avalanche Surface Mount Rectifiers
Fast Switching Avalanche Surface Mount Rectifiers esmp Series Cathode 2 Anode Anode 2 FEATURES Very low profile - typical height of. mm Available Ideal for automated placement Glass passivated pellet chip
More informationSurface Mount Power Voltage-Regulating Diodes
Surface Mount Power Voltage-Regulating Diodes DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Low Zener impedance Low regulation factor Meets MSL level, per J-STD-2, if maximum
More informationDual Common Cathode Ultrafast Plastic Rectifier
Dual Common Cathode Ultrafast Plastic Rectifier TO-2AB UGE8xCT PIN PIN 2 3 2 FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency Low
More informationSurface Mount Ultrafast Plastic Rectifier
Surface Mount Ultrafast Plastic Rectifier PRIMARY CHARACTERISTICS I F(AV) 1.0 A V RRM 200 V I FSM 40 A t rr 25 ns V F 0.71 V T J max. 175 C Package Diode variations Single die FEATURES Glass passivated
More informationHigh Current Density Surface Mount Dual Common-Cathode Schottky Rectifier
High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier esmp TM Series 2 TO-277A (SMPC) Anode FEATURES Very low profile - typical height of. mm Ideal for automated placement Low forward
More informationSurface Mount Ultrafast Plastic Rectifier
Surface Mount Ultrafast Plastic Rectifier DO-24AB (SMC) PRIMARY CHARACTERISTICS I F(AV) 3. A V RRM 3 V, 4 V I FSM A t rr 35 ns V F at I F. V T J max. 5 C Package DO-24AB (SMC) Diode variations Single die
More informationHigh Voltage Ultrafast Avalanche SMD Rectifiers
High Voltage Ultrafast Avalanche SMD Rectifiers PRIMARY CHARACTERISTICS I F(AV) DO-24AC (SMA).0 A FEATURES Glass passivated pellet chip junction Low profile package Ideal for automated placement Low reverse
More informationDual Common-Cathode Ultrafast Rectifier
Dual Common-Cathode Ultrafast Rectifier TO-22AB BYV32 Series PIN PIN 3 CASE 2 3 TO-263AB ITO-22AB 2 3 BYVF32 Series PIN PIN 3 2 FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery
More informationSurface-Mount Standard Rectifiers
Surface-Mount Standard Rectifiers esmp Series Top view Bottom view SMF (DO-29AB) PRIMARY CHARACTERISTICS I F(AV) 2.0 A V RRM 200 V, 400 V, 600 V I FSM 35 A V F at I F = 2.0 A (T A = 25 C) 0.85 V I R 5
More informationHigh Current Density Surface Mount Ultrafast Rectifiers
High Current Density Surface Mount Ultrafast Rectifiers esmp Series PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 0 V, 50 V, 200 V t rr 25 ns V F 0.90 V T J max. 75 C Package Diode variations Single die FEATURES
More informationFEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V
Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single in-line package
More informationSurface-Mount Glass Passivated Rectifier
Surface-Mount Glass Passivated Rectifier DESIGN SUPPORT TOOLS Models Available Top View Cathode esmp Series Bottom View PRIMARY CHARACTERISTICS Anode click logo to get started I F(AV).0 A V RRM 400 V,
More informationSurface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier esmp Series Top view Bottom view DO-29AB (SMF) PRIMARY CHARACTERISTICS I F(AV) 2.0 A V RRM 0 V I FSM 50 A V F at I F = 2.0 A () 0.63 V T J max. 75 C Package DO-29AB
More informationHigh Current Density Surface Mount Glass Passivated Rectifiers
SPB, SPD, SPG, SPJ, SPK, SPM High Current Density Surface Mount Glass Passivated Rectifiers esmp Series DO-22AA (SMP) FEATURES Very low profile - typical height of. mm Available Ideal for automated placement
More informationUltrafast Avalanche Surface Mount Rectifiers
Ultrafast Avalanche Surface Mount Rectifiers esmp Series FEATURES Very low profile - typical height of. mm Available Ideal for automated placement Glass passivated pellet chip junction Fast reverse recovery
More informationDual Common-Cathode Schottky Rectifier
SBL(F,B)030CT & SBL(F,B)040CT Dual Common-Cathode Schottky Rectifier TO-0AB SBL0xxCT PIN PIN 3 CASE 3 TO-63AB ITO-0AB 3 SBLF0xxCT PIN PIN 3 FEATURES Guardring for overvoltage protection Lower power losses,
More informationSurface Mount Ultrafast Plastic Rectifier
Surface Mount Ultrafast Plastic Rectifier PRIMARY CHARACTERISTICS I F(AV) 3. A V RRM 5 V, V, 15 V, 2 V I FSM A t rr 2 ns V F.9 V T J max. 15 C Package Diode variations Single FEATURES Glass passivated
More informationGeneral Purpose Plastic Rectifier
General Purpose Plastic Rectifier N400 thru N4007 DO-204AL (DO-4) PRIMARY CHARACTERISTICS I F(AV).0 A V RRM V to 00 V I FSM (8.3 ms sine-wave) A I FSM (square wave t p = ms) 45 A V F. V I R 5.0 µa T J
More informationHigh Voltage Schottky Rectifier
MB0H90, MB0H, MF0H High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance ITO-220AC D 2 PA (TO-263AB) 2 2 MB0H90 MF0H MB0H PIN PIN PIN 2 PIN 2 HEATSIN PRIMARY
More informationMSP3V3, MSP5.0A. Surface Mount TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES. Series.
Surface Mount TRANSZORB Transient Voltage Suppressors esmp Series Top View Bottom View PRIMARY CHARACTERISTICS V WM 3.3 V to 5. V V BR 4.1 V to 7.7 V P PPM 15 W T J max. 15 C Polarity Uni-directional Package
More informationSurface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier esmp Series Top view Bottom view SMF (DO-219AB) Cathode Anode FEATURES Low profile package Available Ideal for automated placement Low forward voltage drop, low
More informationFast Switching Plastic Rectifier
BY9(X,B)-00 thru BY9(X,B)-800 Fast Switching Plastic Rectifier TO-0AC BY9 Series PIN PIN CASE TO-63AB ITO-0AC BY9x Series PIN PIN FEATURES Glass passivated chip junction Superfast recovery time for high
More informationUltrafast Avalanche Surface Mount Rectifiers
Ultrafast Avalanche Surface Mount Rectifiers DESIGN SUPPORT TOOLS Models Available esmp Series PRIMARY CHARACTERISTICS Cathode I F(AV) 2.0 A V RRM 200 V, 400 V, 600 V I FSM 30 A t rr 75 ns E AS 20 mj V
More informationHyperfast Rectifier, 2 x 5 A FRED Pt
Hyperfast Rectifier, 2 x 5 A FRED Pt VS-CSH02HM3 K TO-277A (SMPC) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
More informationP4KE6.8A thru P4KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors PRIMARY CHARACTERISTICS V WM 5.8 V to 459 V V BR uni-directional 6.8 V to 54 V V BR bi-directional 6.8 V to 44 V P PPM 4 W P D 1.5 W I FSM (uni-directional only)
More informationSurface Mount Ultrafast Plastic Rectifier
Surface Mount Ultrafast Plastic Rectifier SMA (DO-24AC) PRIMARY CHARACTERISTICS I F(AV). A V RRM 5 V, V, 5 V, 2 V I FSM 3 A t rr 5 ns V F at I F.92 V T J max. 5 C Package SMA (DO-24AC) Diode variations
More informationSA5.0A thru SA170CA. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.0 V to 170 V P PPM 500 W P D 3.0 W I FSM (uni-directional only) 70 A T J max. 175 C DEVICES FOR BI-DIRECTION APPLICATIONS
More informationUltrafast Plastic Rectifier
8xT, F8xT, B8xT Ultrafast Plastic Rectifier TO-0AC ITO-0AC FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency 8xT PIN F8xT PIN Low leakage
More informationSchottky Barrier Rectifier
Schottky Barrier Rectifier TO-0AC ITO-0AC FEATURES Power pack Low power loss, high efficiency Low forward voltage drop High forward surge capability High frequency operation CASE D PA (TO-63AB) MBRF045
More informationDual Common Cathode Ultrafast Plastic Rectifier
6xT, F6xT, B6xT Dual Common Cathode Ultrafast Plastic Rectifier TO-220AB ITO-220AB FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency
More informationICTE5 thru ICTE18C, 1N6373 thru 1N6386. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.
TRANSZORB Transient Voltage Suppressors Case Style 1.5KE PRIMARY CHARACTERISTICS V WM 5. V to 18 V V BR (uni-directional) 6. V to 21.2 V V BR (bi-directional) 9.2 V to 21.2 V P PPM 1 W P D 6.5 W I FSM
More informationUltrafast Rectifier FEATURES
Ultrafast Rectifier TO-AC ITO-AC BYW9 Series BYWF9 Series PIN PIN CASE D PA (TO-63AB) BYWB9 Series PIN HEATSIN DESIGN SUPPORT TOOLS click logo to get started FEATURES Power pack Glass passivated pellet
More informationSingle Phase Rectifier Bridge, 1.9 A
Single Phase Rectifier Bridge, 1.9 A VS- Series PRODUCT SUMMARY I O V RRM Package Circuit 1.9 A 1 V to 1 V Single phase bridge FEATURES Suitable for printed circuit board mounting Leads on standard 2.54
More informationUltrafast Plastic Rectifier
Ultrafast Plastic Rectifier 6xT, F6xT, B6xT TO-0AC 6xT Series PIN CASE ITO-0AC F6xT Series PIN D PA (TO-63AB) B6xT Series PIN HEATSIN FEATURES Power pack Glass passivated pellet chip junction Ultrafast
More informationSurface Mount TRANSZORB Transient Voltage Suppressors
Surface Mount TRANSZORB Transient Voltage Suppressors esmp Series PRIMARY CHARACTERISTICS V BR uni-directional 4. V to 44.2 V V WM 3.3 V to 36 V P PPM 400 W I FSM 40 A T J max. 150 C Polarity Uni-directional
More informationSchottky Barrier Rectifiers
Schottky Barrier Rectifiers FEATURES Guardring for overvoltage protection Very small conduction losses Extremely fast switching Low forward voltage drop DO-204AL (DO-4) High frequency operation Solder
More informationHigh Voltage Schottky Rectifier
MBR0H, MBRF0H, MBRB0H High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-0AC MBR0H PIN CASE MBRB0H PIN D PA (TO-63AB) ITO-0AC MBRF0H PIN HEATSIN FEATURES
More informationPhotovoltaic Solar Cell Protection Schottky Rectifier, 15 A
Photovoltaic Solar Cell Protection Schottky Rectifier, Cathode Anode DO-204AR PRODUCT SUMMARY Package DO-204AR I F(AV) V R 30 V, 35 V, 40 V, 45 V V F at I F 0.48 V I RM max. 70 ma at 125 C T J max. 150
More informationDual Common Cathode High Voltage Schottky Rectifier
Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB MBR20HCT PIN PIN 3 PRIMARY CHARACTERISTICS I F(AV) 2 x 0 A V RRM V I FSM 250
More informationSurface Mount Glass Passivated Junction Rectifier
-xxx, GL4x Surface Mount Glass Passivated Junction Rectifier SUPERECTIFIER DO-23AB PRIMARY CHARACTERISTICS I F(AV).0 A V RRM (-xxx, GL4x) 50 V to 00 V, 50 V to 600 V I FSM 30 A I R μa E AS 5 mj V F. V,.2
More informationUltrafast Avalanche SMD Rectifier
Ultrafast Avalanche SMD Rectifier PRIMARY CHARACTERISTICS I F(AV) 1.5 A V RRM V I FSM 3 A I R 5. μa t rr 75 ns V F 1.7 V E R 2 mj T J max. 15 C Package Diode variations Single FEATURES Low profile package
More informationV20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.54 V at I F = 5 A TO-220AB V2020SG PIN PIN 2 PIN 3 CASE 2 3 TMBS ITO-220AB 2 3 VF2020SG PIN PIN 2 PIN 3 FEATURES Trench MOS Schottky
More informationSurface Mount Ultra Fast Rectifier
USA, USB, USD, USG, USJ, USK, USM Surface Mount Ultra Fast Rectifier SMA (DO-24AC) PRIMARY CHARACTERISTICS I F(AV).0 A 50 V, 0 V, 200 V, 400 V, 600 V, V RRM 800 V, 00 V I FSM 30 A t rr 50 ns, 75 ns V F
More informationSingle Phase Rectifier Bridge, 1.2 A
Single Phase Rectifier Bridge, 1.2 A FEATURES VS-1KAB-E Series Ease of assembly, installation, inventory High surge rating Compact Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
More informationFast Avalanche SMD Rectifier
BYG2K-E3/HE3, BYG2M-E3/HE3 Fast Avalanche SMD Rectifier SMA (DO-24AC) PRIMARY CHARACTERISTICS I F(AV).5 A V RRM 8 V, V I FSM 3 A I R. μa V F.6 V t rr 2 ns E R 2 mj T J max. 5 C Package SMA (DO-24AC) Diode
More informationSurface Mount Ultrafast Plastic Rectifier
Surface Mount Ultrafast Plastic Rectifier SMC (DO-24AB) PRIMARY CHARACTERISTICS I F(AV) 3. A V RRM 4 V, 6 V I FSM 25 A t rr 5 ns V F.5 V T J max. 75 C Package SMC (DO-24AB) Diode variation Single FEATURES
More information