Load Switch with Level-Shift

Transcription

1 Load Switch with Level-Shift Si8DDL Marking Code: VD SOT-33 SC-7 ( leads) S 2 ON/OFF R, C Top View PRODUCT SUMMARY V DS (V) 2 R DS(on) ( ) at V IN =. V.2 R DS(on) ( ) at V IN = 2. V.3 R DS(on) ( ) at V IN =.8 V.8 I D (A) ±. Configuration Level-shift APPLICATION CIRCUITS Si8DDL 2 D 2 3 D 2 FEATURES Low R DS(on) TrenchFET.8 V to 2 V input. V to 8 V logic level control Low profile, small footprint SC-7- package 2 V ESD protection on input switch, V ON/OFF Adjustable slew-rate Material categorization: for definitions of compliance please see APPLICATIONS Load switch with level-shift Slew-rate control Portable / consumer devices DESCRIPTION The Si8DDL includes a p- and n-channel MOSFET in a single SC-7- package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as. V. The Si8DDL operates on supply lines from.8 V to 2 V, and can drive loads up to. A. V IN R Q2 2, 3 C V OUT. C i = µf ON/OFF Q C o LOAD 7 3. C i GND 2 8 Switching Variation at V IN = 2. V, R = 2 k COMPONENTS R Pull-up resistor Typical k to M a Optional slew-rate control Typical to k a C Optional slew-rate control Typical pf Note a. Minimum R value should be at least x to ensure Q turn-on The Si8DDL is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so thaise-times can be tailored to different load types. S3-28-Rev. B, 23-Dec-3 Document Number: 2888 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 Si8DDL FUNCTIONAL BLOCK DIAGRAM Si8DDL S2 Q2 2, 3 D2 R, C ON/OFF Q ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SC-7 Si8DDL-T-GE3 ABSOLUTE MAXIMUM RATINGS (T A = 2 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Input voltage V IN (V DS2 ) 2 V On/off voltage V ON/OFF 8 Load current Continuous a, b ±. I L Pulsed b, c ± A Continuous intrinsic diode conduction a I S -.3 Maximum power dissipation a P D.37 W Operating junction and storage temperature range T J, T stg - to C ESD rating, MIL-STD-883D human body model ( pf, ) ESD 2 kv THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient (continuous current) a R thja 29 3 C/W Maximum junction-to-foot (Q2) R thjf 2 3 SPECIFICATIONS (T J = 2 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Off Characteristics Reverse leakage current I FL V IN = 2 V, V ON/OFF = V - - μa Diode forward voltage V SD I S = -.8 A V On Characteristics Input voltage range V IN.8-2 V On-resistance (p-channel) R DS(on) V ON/OFF =. V, V IN = 2. V, I D =.9 A V ON/OFF =. V, V IN =. V, I D =. A -..2 V ON/OFF =. V, V IN =.8 V, I D =.2 A On-state (p-channel) drain-current I D(on) Notes a. Surface mounted on FR board b. V IN = 2 V, V ON/OFF = 8 V, T A = 2 C c. Pulse test: pulse width 3 μs, duty cycle 2 % V IN-OUT.2 V, V IN = V, V ON/OFF =. V - - V IN-OUT.3 V, V IN = 3 V, V ON/OFF =. V - - Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S3-28-Rev. B, 23-Dec-3 2 Document Number: 2888 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT A

3 Si8DDL TYPICAL CHARACTERISTICS (2 C, unless otherwise noted) V GS = V thru 3 V V GS =2.V.8 V ON/OFF =. V to 8 V T J = 2 o C I D - Drain Current (A) 3 2 V GS =2V V GS =.8V..9 V GS =. V. T J = 2 o C.. 2 V DS - Drain-to-Source Voltage (V).. 3. I L (A) Output Characteristics V DROP vs. I L at V IN =. V...2 V ON/OFF =. V to 8 V T J = 2 o C. V ON/OFF =. V to 8 V T J = 2 o C T J = 2 o C. T J = 2 o C I L (A) I L (A) V DROP vs. I L at V IN = 2. V V DROP vs. I L at V IN =.8 V V ON/OFF =. V to 8 V T J = 2 C T J = 2 C R DS(on) - On-Resistance (Normalized) V ON/OFF =. V to 8 V V GS = 2. V V GS =. V V GS =.8 V 2 8 V IN - (V) V DROP vs. V IN at T J - Junction Temperature ( C) Normalized On-Resistance vs. Junction Temperature S3-28-Rev. B, 23-Dec-3 3 Document Number: 2888 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 Si8DDL TYPICAL CHARACTERISTICS (2 C, unless otherwise noted). V ON/OFF =. V to 8 V R DS(on) - On-Resistance (Ω).3.2. T J = 2 C T J = 2 C I S - Source Current (A) T J = C T J = 2 C 2 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Input Voltage V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 8 3. C i = µf. C i = µf Switching Variation at V IN =. V, R = 2 k Switching Variation at V IN = 2. V, R = 2 k 2 C i = µf 2 9 C i = µf Switching Variation at V IN =.8 V, R = 2 k Switching Variation at V IN =. V, R = 3 k S3-28-Rev. B, 23-Dec-3 Document Number: 2888 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 Si8DDL TYPICAL CHARACTERISTICS (2 C, unless otherwise noted) 2 C i = µf C i = µf td(on) 2 8 Switching Variation at V IN = 2. V, R = 3 k Switching Variation at V IN =.8 V, R = 3 k Limited by R DS(on) * μs I D - Drain Current (A). ms ms ms T A = 2 C Single Pulse s DC, s BVDSS Limited.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Foot Normalized Effective Transient Thermal Impedance.. Duty Cycle = Single Pulse.... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 3 C/W 3. T JM - T A = P DM Z (t) thja maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S3-28-Rev. B, 23-Dec-3 Document Number: 2888 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Notes: P DM. Surface Mounted

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