The Miller Approximation. CE Frequency Response. The exact analysis is worked out on pp of H&S.

Size: px
Start display at page:

Download "The Miller Approximation. CE Frequency Response. The exact analysis is worked out on pp of H&S."

Transcription

1 CE Frequency Response The exact analysis is worked out on pp of H&S. The Miller Approximation Therefore, we consider the effect of C µ on the input node only V out V s = r g π m ( ro r r π + R oc R L ) ( jω ω z ) S ( + jω ω p ) ( + jω ω p2 ) r The low-frequency voltage gain (loaded) is g π m ( ro r r π + R oc R L ) S The zero is higher than the transition frequency ω T = g m ( C π + C µ ) The first (lowest frequency) pole is (approximately) where ω p = {( R S r π )C [ π + ( + g m R out ')C µ ] + R out 'C µ } R out ' = r o r oc R L neglect the feedforward current I µ in comparison with g m V π... a good approximation I t = (V t - V o ) / Z µ V o = - g m V t R L / (R L + R out ) = A vcµ V t where A vcµ is the low frequency voltage gain across C µ The second pole is (approximately) ( R S r π )R ( out ') ω p2 = ( R S r π )C [ π + ( + g m R out ')C µ ] + R out 'C µ I t = V t (- A v ) / Z µ Z eff = V t / I t = Z µ / ( - A v ) Z eff = jωc µ A = = vcµ jω( C µ ( A vcµ )) jωc M Brute force analysis is not particularly helpful for gaining insight into the frequency response... C M = ( A vcµ )C µ is the Miller capacitor EE 05 Fall 2000 Page Week 2 EE 05 Fall 2000 Page 2 Week 2

2 Generalized Miller Approximation An impedance Z connected across an amplifier with voltage gain A vz can be replaced by an impedance to ground... multiplied by ( - A vz ) Voltage Gain vs. Frequency for CE Amplifier Using the Miller Approximation The Miller capacitance is lumped together with C π, which results in a singlepole low-pass RC filter at the input Common-emitter and common-source: A vz = large and negative for C µ or C gd --> capacitance at the input is magnified Transfer function has one pole and no zero after Miller approximation: ω 3dB = ( r π R S )C ( π + C M ) Common-collector and common-drain: A vz --> capacitance at the input due to C π or C gs is greatly reduced ω 3dB = ( r π R S )C [ π + ( + g m r o r oc R L )C µ ] ω 3dB ω from the exact analysis (final term R out C µ is missing) The break frequency is reduced by the Miller effect... which results in a large Miller capacitor at the input. EE 05 Fall 2000 Page 3 Week 2 EE 05 Fall 2000 Page 4 Week 2

3 Common Collector Frequency Response Basic approach: two-port model from Chapter 8, decorated with device capacitances Common-Collector Frequency Response Voltage buffer two-port model has input at base and output at emitter: Note carefully where the capacitances are connected! The DC output voltage V OUT is selected to be 0 V, so that the output voltage is just the small-signal voltage v out (phasor representation V out ) R Millerize the base-emitter capacitor: gain across it is A L vπ = R L + R out R C M C π ( A vπ ) C π L R C out = = = R L + R π out R L + R out The break frequency of the common-collector is: ω 3dB = ( R S )C ( µ + C M ) can approach the transition frequency for small source resistances EE 05 Fall 2000 Page 5 Week 2 EE 05 Fall 2000 Page 6 Week 2

4 Common-Base Frequency Response Similar approach: start with two-port and add capacitors... Common-Base Frequency Response Poles are separate (no coupling between input and output) ω pin, = ( R S )C π ω pout, = ( R out R L )C µ The input pole is beyond the transition frequency, due to the low value of = /g m The output pole is a function of R L since the output resistance is so large. For small load resistances, the output pole can approach the transition frequency Two-port model: Summary of single-stage amplifiers: CE/CS: Miller effect decreases the bandwidth severely CC/CD: wideband CB/CG: wideband EE 05 Fall 2000 Page 7 Week 2 EE 05 Fall 2000 Page 8 Week 2

5 Multistage Amplifiers Single-stage transistor amplifiers are inadequate for meeting most design requirements for any of the four amplifier types (voltage, current, transconductance, and transresistance.) Therefore, we use more than one amplifying stage. The challenge is to gain insight into when to use which of the 9 single stages that are available in a modern BiCMOS process: Bipolar Junction Transistor: CE, CB, CC -- in npn and pnp * versions MOSFET: CS, CG, CD -- in n-channel and p-channel versions * in most BiCMOS technologies, only the npn BJT is available How to design multi-stage amplifiers that satisfy the required performance goals? Example : Cascaded Voltage Amplifier Want --> infinity, R out --> 0, with high voltage gain. Try CS as first stage, followed by CS to get more gain... use 2-port models Rout CS CS 2 solve for overall voltage gain... higher, but R out = R out2 which is too large * Two fundamental requirements:. Impedance matching: output resistance of stage n, R out, n and input resistance of stage n +,, (n+), must be in the proper ratio, (n+) / R out, n --> or, (n+) / R out, n --> 0 to avoid degrading the overall gain parameter for the amplifier 2. DC coupling: we will directly connect stages: effect on DC signal levels must be considered, too EE 05 Fall 2000 Page 9 Week 2 EE 05 Fall 2000 Page 0 Week 2

6 Three-Stage Voltage Amplifier Fix output resistance problem by adding a common drain stage (voltage buffer) Cascaded Transconductance Amplifier input resistance should be high; output resistance should also be high initial idea: use CS stages (they are natural transconductance amps) CS CS 2 Rout Output resistance is not that low... few kω for a typical MOSFET and bias --> could pay an area penalty by making (W/L) very large to fix. Overall G m = - g m (r o r oc ) g m2 = A v g m2... can be very large BUT, output resistance is only moderately large... need to increase it EE 05 Fall 2000 Page Week 2 EE 05 Fall 2000 Page 2 Week 2

7 Improved Transconductance Amplifier Output resistance: boost using CB or CG stage Two-Stage Current Buffers since one CB stage boosted the output resistance substantially, why not add another one... CS CS 2 CB Rout high-source resistance current sources are needed to avoid having r oc3 limit the resistance The base-emitter resistance of the 2 nd stage BJT is r π2 which is much less than the 2 nd stage source resistance = st stage output resistance R S2 = R out = β o r o r oc Therefore, the output resistance expression reduces to R out g m2 r o2 r π2 r oc2 = β o2 r o2 r oc2... no improvement over a single CB stage EE 05 Fall 2000 Page 3 Week 2 EE 05 Fall 2000 Page 4 Week 2

8 Improved Two-Stage Current Buffer: CB/CG The addition of a common-gate stage results in further increases in the output resistance, making the current buffer closer to an ideal current source at the output port The product of transconductance and output resistance g m2 r o2 can be on the order of for a MOSFET --> R out is increased by over two orders of magnitude... practical limit... on the order of 00 MΩ Of course, the current supply for the CG stage has to have at least the same order of magnitude of output resistance in order for it not to limit R out. General resistance matching... try not to lose much in doing a current divider or a voltage divider. Which of these is appropriate depends on whether the signal is current or voltage at the port. EE 05 Fall 2000 Page 5 Week 2

Multistage Amplifiers

Multistage Amplifiers Multistage Amplifiers Single-stage transistor amplifiers are inadequate for meeting most design requirements for any of the four amplifier types (voltage, current, transconductance, and transresistance.)

More information

Lecture 33: Context. Prof. J. S. Smith

Lecture 33: Context. Prof. J. S. Smith Lecture 33: Prof J. S. Smith Context We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources and cascode connected devices, and we will also look at

More information

Reading. Lecture 33: Context. Lecture Outline. Chapter 9, multi-stage amplifiers. Prof. J. S. Smith

Reading. Lecture 33: Context. Lecture Outline. Chapter 9, multi-stage amplifiers. Prof. J. S. Smith eading Lecture 33: Chapter 9, multi-stage amplifiers Prof J. S. Smith Context Lecture Outline We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources

More information

Current Supply Topology. CMOS Cascode Transconductance Amplifier. Basic topology. p-channel cascode current supply is an obvious solution

Current Supply Topology. CMOS Cascode Transconductance Amplifier. Basic topology. p-channel cascode current supply is an obvious solution CMOS Cascode Transconductance Amplifier Basic topology. Current Supply Topology p-channel cascode current supply is an obvious solution Current supply must have a very high source resistance r oc since

More information

EE105 Fall 2015 Microelectronic Devices and Circuits

EE105 Fall 2015 Microelectronic Devices and Circuits EE105 Fall 2015 Microelectronic Devices and Circuits Multi-Stage Amplifiers Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of MOS Amplifiers Common

More information

DC Coupling: General Trends

DC Coupling: General Trends DC Coupling: General Trends * Goal: want both input and output to be centered at halfway between the positive and negative supplies (or ground, for a single supply) -- in order to have maximum possible

More information

Lecture 21 - Multistage Amplifiers (I) Multistage Amplifiers. November 22, 2005

Lecture 21 - Multistage Amplifiers (I) Multistage Amplifiers. November 22, 2005 6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 2 Lecture 2 Multistage Amplifiers (I) Multistage Amplifiers November 22, 2005 Contents:. Introduction 2. CMOS multistage voltage amplifier 3.

More information

Lecture 21: Voltage/Current Buffer Freq Response

Lecture 21: Voltage/Current Buffer Freq Response Lecture 21: Voltage/Current Buffer Freq Response Prof. Niknejad Lecture Outline Last Time: Frequency Response of Voltage Buffer Frequency Response of Current Buffer Current Mirrors Biasing Schemes Detailed

More information

Microelectronic Devices and Circuits- EECS105 Final Exam

Microelectronic Devices and Circuits- EECS105 Final Exam EECS105 1 of 13 Fall 2000 Microelectronic Devices and Circuits- EECS105 Final Exam Wednesday, December 13, 2000 Costas J. Spanos University of California at Berkeley College of Engineering Department of

More information

Chapter 15 Goals. ac-coupled Amplifiers Example of a Three-Stage Amplifier

Chapter 15 Goals. ac-coupled Amplifiers Example of a Three-Stage Amplifier Chapter 15 Goals ac-coupled multistage amplifiers including voltage gain, input and output resistances, and small-signal limitations. dc-coupled multistage amplifiers. Darlington configuration and cascode

More information

BJT Circuits (MCQs of Moderate Complexity)

BJT Circuits (MCQs of Moderate Complexity) BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r

More information

CMOS Cascode Transconductance Amplifier

CMOS Cascode Transconductance Amplifier CMOS Cascode Transconductance Amplifier Basic topology. 5 V I SUP v s V G2 M 2 iout C L v OUT Device Data V Tn = 1 V V Tp = 1 V µ n C ox = 50 µa/v 2 µ p C ox = 25 µa/v 2 λ n = 0.05 V 1 λ p = 0.02 V 1 @

More information

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression

More information

SAMPLE FINAL EXAMINATION FALL TERM

SAMPLE FINAL EXAMINATION FALL TERM ENGINEERING SCIENCES 154 ELECTRONIC DEVICES AND CIRCUITS SAMPLE FINAL EXAMINATION FALL TERM 2001-2002 NAME Some Possible Solutions a. Please answer all of the questions in the spaces provided. If you need

More information

Lecture 34: Designing amplifiers, biasing, frequency response. Context

Lecture 34: Designing amplifiers, biasing, frequency response. Context Lecture 34: Designing amplifiers, biasing, frequency response Prof J. S. Smith Context We will figure out more of the design parameters for the amplifier we looked at in the last lecture, and then we will

More information

ECE 255, Discrete-Circuit Amplifiers

ECE 255, Discrete-Circuit Amplifiers ECE 255, Discrete-Circuit Amplifiers 20 March 2018 In this lecture, we will continue with the study of transistor amplifiers with the presence of biasing circuits and coupling capacitors in place. We will

More information

EE105 Fall 2015 Microelectronic Devices and Circuits. Basic Single-Transistor Amplifier Configurations

EE105 Fall 2015 Microelectronic Devices and Circuits. Basic Single-Transistor Amplifier Configurations EE05 Fall 205 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH 2- MOSFET Basic Single-Transistor Amplifier Configurations BJT 2-2 Two-Port Model of Amplifiers

More information

ESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier

ESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier High Frequency BJT Model & Cascode BJT Amplifier 1 Gain of 10 Amplifier Non-ideal Transistor C in R 1 V CC R 2 v s Gain starts dropping at > 1MHz. Why! Because of internal transistor capacitances that

More information

Improving Amplifier Voltage Gain

Improving Amplifier Voltage Gain 15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance

More information

PartIIILectures. Multistage Amplifiers

PartIIILectures. Multistage Amplifiers University of missan Electronic II, Second year 2015-2016 PartIIILectures Assistant Lecture: 1 Multistage and Compound Amplifiers Basic Definitions: 1- Gain of Multistage Amplifier: Fig.(1-1) A general

More information

5.25Chapter V Problem Set

5.25Chapter V Problem Set 5.25Chapter V Problem Set P5.1 Analyze the circuits in Fig. P5.1 and determine the base, collector, and emitter currents of the BJTs as well as the voltages at the base, collector, and emitter terminals.

More information

(a) BJT-OPERATING MODES & CONFIGURATIONS

(a) BJT-OPERATING MODES & CONFIGURATIONS (a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base

More information

Experiment 8 Frequency Response

Experiment 8 Frequency Response Experiment 8 Frequency Response W.T. Yeung, R.A. Cortina, and R.T. Howe UC Berkeley EE 105 Spring 2005 1.0 Objective This lab will introduce the student to frequency response of circuits. The student will

More information

Homework Assignment 12

Homework Assignment 12 Homework Assignment 12 Question 1 Shown the is Bode plot of the magnitude of the gain transfer function of a constant GBP amplifier. By how much will the amplifier delay a sine wave with the following

More information

Electron Devices and Circuits

Electron Devices and Circuits Electron Devices and Circuits (EC 8353) Prepared by Mr.R.Suresh, AP/EEE Ms.S.KARKUZHALI,A.P/EEE BJT small signal model Analysis of CE, CB, CC amplifiers- Gain and frequency response MOSFET small signal

More information

II/IV B. TECH. DEGREE EXAMINATIONS, NOVEMBER Second Semester EC/EE ELECTRONIC CIRCUIT ANALYSIS. Time : Three Hours Max.

II/IV B. TECH. DEGREE EXAMINATIONS, NOVEMBER Second Semester EC/EE ELECTRONIC CIRCUIT ANALYSIS. Time : Three Hours Max. Total No. of Questions : 9] [Total No. of Pages : 02 B.Tech. II/ IV YEAR DEGREE EXAMINATION, APRIL/MAY - 2014 (Second Semester) EC/EE/EI Electronic Circuit Analysis Time : 03 Hours Maximum Marks : 70 Q1)

More information

Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10

Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10 Index A absolute value, 308 additional pole, 271 analog multiplier, 190 B BiCMOS,107 Bode plot, 266 base-emitter voltage, 16, 50 base-emitter voltages, 296 bias current, 111, 124, 133, 137, 166, 185 bipolar

More information

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS AV18-AFC ANALOG FUNDAMENTALS C Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS 1 ANALOG FUNDAMENTALS C AV18-AFC Overview This topic identifies the basic FET amplifier configurations and their principles of

More information

BJT Amplifier. Superposition principle (linear amplifier)

BJT Amplifier. Superposition principle (linear amplifier) BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited

More information

Building Blocks of Integrated-Circuit Amplifiers

Building Blocks of Integrated-Circuit Amplifiers Building Blocks of ntegrated-circuit Amplifiers 1 The Basic Gain Cell CS and CE Amplifiers with Current Source Loads Current-source- or active-loaded CS amplifier Rin A o R A o g r r o g r 0 m o m o Current-source-

More information

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages. November 17, 2005

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages. November 17, 2005 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 20 1 Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages November 17, 2005 Contents: 1. Common source amplifier (cont.) 2. Common drain

More information

Solid State Devices & Circuits. 18. Advanced Techniques

Solid State Devices & Circuits. 18. Advanced Techniques ECE 442 Solid State Devices & Circuits 18. Advanced Techniques Jose E. Schutt-Aine Electrical l&c Computer Engineering i University of Illinois jschutt@emlab.uiuc.edu 1 Darlington Configuration - Popular

More information

Unit 3: Integrated-circuit amplifiers (contd.)

Unit 3: Integrated-circuit amplifiers (contd.) Unit 3: Integrated-circuit amplifiers (contd.) COMMON-SOURCE AND COMMON-EMITTER AMPLIFIERS The Common-Source Circuit The most basic IC MOS amplifier is shown in fig.(1). The source of MOS transistor is

More information

Phy 335, Unit 4 Transistors and transistor circuits (part one)

Phy 335, Unit 4 Transistors and transistor circuits (part one) Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit

More information

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No # 05 FETS and MOSFETS Lecture No # 06 FET/MOSFET Amplifiers and their Analysis In the previous lecture

More information

Lecture 3: Transistors

Lecture 3: Transistors Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,

More information

Radio Frequency Electronics

Radio Frequency Electronics Radio Frequency Electronics Active Components IV Samuel Morse Born in 79 in Massachusetts Fairly accomplished painter After witnessing various electrical experiments, got intrigued by electricity Designed

More information

ECE 255, MOSFET Basic Configurations

ECE 255, MOSFET Basic Configurations ECE 255, MOSFET Basic Configurations 8 March 2018 In this lecture, we will go back to Section 7.3, and the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously,

More information

Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B

Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B Problem 1. Consider the following circuit, where a saw-tooth voltage is applied

More information

Electronics EECE2412 Spring 2018 Exam #2

Electronics EECE2412 Spring 2018 Exam #2 Electronics EECE2412 Spring 2018 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 29 March 2018 File:12262/exams/exam2 Name: General Rules: You

More information

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect

More information

Mini Project 2 Single Transistor Amplifiers. ELEC 301 University of British Columbia

Mini Project 2 Single Transistor Amplifiers. ELEC 301 University of British Columbia Mini Project 2 Single Transistor Amplifiers ELEC 301 University of British Columbia 44638154 October 27, 2017 Contents 1 Introduction 1 2 Investigation 1 2.1 Part 1.................................................

More information

F7 Transistor Amplifiers

F7 Transistor Amplifiers Lars Ohlsson 2018-09-25 F7 Transistor Amplifiers Outline Transfer characteristics Small signal operation and models Basic configurations Common source (CS) CS/CE w/ source/ emitter degeneration resistance

More information

Midterm 2 Exam. Max: 90 Points

Midterm 2 Exam. Max: 90 Points Midterm 2 Exam Name: Max: 90 Points Question 1 Consider the circuit below. The duty cycle and frequency of the 555 astable is 55% and 5 khz respectively. (a) Determine a value for so that the average current

More information

Course Number Section. Electronics I ELEC 311 BB Examination Date Time # of pages. Final August 12, 2005 Three hours 3 Instructor

Course Number Section. Electronics I ELEC 311 BB Examination Date Time # of pages. Final August 12, 2005 Three hours 3 Instructor Course Number Section Electronics ELEC 311 BB Examination Date Time # of pages Final August 12, 2005 Three hours 3 nstructor Dr. R. Raut M aterials allowed: No Yes X (Please specify) Calculators allowed:

More information

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.

More information

Lecture 7. ANNOUNCEMENTS MIDTERM #1 willbe held in class on Thursday, October 11 Review session will be held on Friday, October 5

Lecture 7. ANNOUNCEMENTS MIDTERM #1 willbe held in class on Thursday, October 11 Review session will be held on Friday, October 5 Lecture 7 ANNOUNCEMENTS MIDTERM #1 willbe held in class on Thursday, October 11 Review session will be held on Friday, October 5 MIDTERM #2 will be held in class on Tuesday, November 13 OUTLINE BJT Amplifiers

More information

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current

More information

Single-Stage BJT Amplifiers and BJT High-Frequency Model. Single-Stage BJT Amplifier Configurations

Single-Stage BJT Amplifiers and BJT High-Frequency Model. Single-Stage BJT Amplifier Configurations 1 Single-Stage BJT Amplifiers and BJT High-Frequency Model Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s

More information

Electronic Devices. Floyd. Chapter 6. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd

Electronic Devices. Floyd. Chapter 6. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd Electronic Devices Ninth Edition Floyd Chapter 6 Agenda BJT AC Analysis Linear Amplifier AC Load Line Transistor AC Model Common Emitter Amplifier Common Collector Amplifier Common Base Amplifier Special

More information

ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source

ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source Output from Collector Start with bias DC analysis make sure BJT is in FA, then calculate small signal parameters for AC analysis.

More information

EE105 Fall 2015 Microelectronic Devices and Circuits

EE105 Fall 2015 Microelectronic Devices and Circuits EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of

More information

Building Blocks of Integrated-Circuit Amplifiers

Building Blocks of Integrated-Circuit Amplifiers CHAPTER 7 Building Blocks of Integrated-Circuit Amplifiers Introduction 7. 493 IC Design Philosophy 7. The Basic Gain Cell 494 495 7.3 The Cascode Amplifier 506 7.4 IC Biasing Current Sources, Current

More information

Last time: BJT CE and CB amplifiers biased by current source

Last time: BJT CE and CB amplifiers biased by current source Last time: BJT CE and CB amplifiers biased by current source Assume FA regime, then VB VC V E I B I E, β 1 I Q C α I, V 0. 7V Calculate V CE and confirm it is > 0.2-0.3V, then BJT can be replaced with

More information

MOSFET Common Source Amplifier

MOSFET Common Source Amplifier Microelectronic Circuits MOSFET Common Source Amplifier Slide 1 Small nal Model The definition of Transconductance g m i D S S S k n W L O The definition of output resistance r o DS I The definition of

More information

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth

More information

Chapter 11. Differential Amplifier Circuits

Chapter 11. Differential Amplifier Circuits Chapter 11 Differential Amplifier Circuits 11.0 ntroduction Differential amplifier or diff-amp is a multi-transistor amplifier. t is the fundamental building block of analog circuit. t is virtually formed

More information

QUESTION BANK for Analog Electronics 4EC111 *

QUESTION BANK for Analog Electronics 4EC111 * OpenStax-CNX module: m54983 1 QUESTION BANK for Analog Electronics 4EC111 * Bijay_Kumar Sharma This work is produced by OpenStax-CNX and licensed under the Creative Commons Attribution License 4.0 Abstract

More information

6.776 High Speed Communication Circuits Lecture 7 High Freqeuncy, Broadband Amplifiers

6.776 High Speed Communication Circuits Lecture 7 High Freqeuncy, Broadband Amplifiers 6.776 High Speed Communication Circuits Lecture 7 High Freqeuncy, Broadband Amplifiers Massachusetts Institute of Technology February 24, 2005 Copyright 2005 by Hae-Seung Lee and Michael H. Perrott High

More information

Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS

Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS 1. Objective: The objective of this experiment is to explore the basic applications of the bipolar junction transistor

More information

Lecture 030 ECE4430 Review III (1/9/04) Page 030-1

Lecture 030 ECE4430 Review III (1/9/04) Page 030-1 Lecture 030 ECE4430 Review III (1/9/04) Page 0301 LECTURE 030 ECE 4430 REVIEW III (READING: GHLM Chaps. 3 and 4) Objective The objective of this presentation is: 1.) Identify the prerequisite material

More information

Chapter 12 Opertational Amplifier Circuits

Chapter 12 Opertational Amplifier Circuits 1 Chapter 12 Opertational Amplifier Circuits Learning Objectives 1) The design and analysis of the two basic CMOS op-amp architectures: the two-stage circuit and the single-stage, folded cascode circuit.

More information

Electronics EECE2412 Spring 2017 Exam #2

Electronics EECE2412 Spring 2017 Exam #2 Electronics EECE2412 Spring 2017 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 30 March 2017 File:12198/exams/exam2 Name: : General Rules:

More information

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages Outline Common drain amplifier Common gate amplifier Reading Assignment: Howe and Sodini; Chapter 8, Sections 8.78.9 6.02 Spring 2009 . Common

More information

Microelectronics Circuit Analysis and Design

Microelectronics Circuit Analysis and Design Neamen Microelectronics Chapter 6-1 Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 6 Basic BJT Amplifiers Neamen Microelectronics Chapter 6-2 In this chapter, we will: Understand

More information

Small signal ac equivalent circuit of BJT

Small signal ac equivalent circuit of BJT UNIT-2 Part A 1. What is an ac load line? [N/D 16] A dc load line gives the relationship between the q-point and the transistor characteristics. When capacitors are included in a CE transistor circuit,

More information

EE105 Fall 2015 Microelectronic Devices and Circuits. Amplifier Gain

EE105 Fall 2015 Microelectronic Devices and Circuits. Amplifier Gain EE05 Fall 205 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) 2- Amplifier Gain Voltage Gain: Current Gain: Power Gain: Note: A v v O v I A i i O i

More information

Lecture #4 BJT AC Analysis

Lecture #4 BJT AC Analysis November 2014 Ahmad El-Banna Integrated Technical Education Cluster At AlAmeeria J-601-1448 Electronic Principals Lecture #4 BJT AC Analysis Instructor: Dr. Ahmad El-Banna Agenda BJT transistor Modeling

More information

Lab 2: Discrete BJT Op-Amps (Part I)

Lab 2: Discrete BJT Op-Amps (Part I) Lab 2: Discrete BJT Op-Amps (Part I) This is a three-week laboratory. You are required to write only one lab report for all parts of this experiment. 1.0. INTRODUCTION In this lab, we will introduce and

More information

Code: 9A Answer any FIVE questions All questions carry equal marks *****

Code: 9A Answer any FIVE questions All questions carry equal marks ***** II B. Tech II Semester (R09) Regular & Supplementary Examinations, April/May 2012 ELECTRONIC CIRCUIT ANALYSIS (Common to EIE, E. Con. E & ECE) Time: 3 hours Max Marks: 70 Answer any FIVE questions All

More information

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M) SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave

More information

In a cascade configuration, the overall voltage and current gains are given by:

In a cascade configuration, the overall voltage and current gains are given by: ECE 3274 Two-Stage Amplifier Project 1. Objective The objective of this lab is to design and build a direct coupled two-stage amplifier, including a common-source gain stage and a common-collector buffer

More information

Unit III FET and its Applications. 2 Marks Questions and Answers

Unit III FET and its Applications. 2 Marks Questions and Answers Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric

More information

Mini Project 3 Multi-Transistor Amplifiers. ELEC 301 University of British Columbia

Mini Project 3 Multi-Transistor Amplifiers. ELEC 301 University of British Columbia Mini Project 3 Multi-Transistor Amplifiers ELEC 30 University of British Columbia 4463854 November 0, 207 Contents 0 Introduction Part : Cascode Amplifier. A - DC Operating Point.......................................

More information

The Bipolar Junction Transistor- Small Signal Characteristics

The Bipolar Junction Transistor- Small Signal Characteristics The Bipolar Junction Transistor- Small Signal Characteristics Debapratim Ghosh deba21pratim@gmail.com Electronic Systems Group Department of Electrical Engineering Indian Institute of Technology Bombay

More information

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) 4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.

More information

Experiment 9- Single Stage Amplifiers with Passive Loads - MOS

Experiment 9- Single Stage Amplifiers with Passive Loads - MOS Experiment 9- Single Stage Amplifiers with Passive oads - MOS D. Yee,.T. Yeung, M. Yang, S.M. Mehta, and R.T. Howe UC Berkeley EE 105 1.0 Objective This is the second part of the single stage amplifier

More information

Microelectronic Devices and Circuits Lecture 22 - Diff-Amp Anal. III: Cascode, µa Outline Announcements DP:

Microelectronic Devices and Circuits Lecture 22 - Diff-Amp Anal. III: Cascode, µa Outline Announcements DP: 6.012 Microelectronic Devices and Circuits Lecture 22 DiffAmp Anal. III: Cascode, µa741 Outline Announcements DP: Discussion of Q13, Q13' impact. Gain expressions. Review Output Stages DC Offset of an

More information

Electronic Circuits EE359A

Electronic Circuits EE359A Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 18 488 Class C operation 4 2 h( t) 0 2 4 0 0.2 0.4 0.6 0.8 t 0 ( ) 20 log A j 20 40 60 0 10 20 30 Cconduction_angle

More information

Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs

Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs Integrated Circuit Amplifiers Comparison of MOSFETs and BJTs 17 Typical CMOS Device Parameters 0.8 µm 0.25 µm 0.13 µm Parameter NMOS PMOS NMOS PMOS NMOS PMOS t ox (nm) 15 15 6 6 2.7 2.7 C ox (ff/µm 2 )

More information

ECE 255, MOSFET Amplifiers

ECE 255, MOSFET Amplifiers ECE 255, MOSFET Amplifiers 26 October 2017 In this lecture, the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously, it has been shown that with the transistor

More information

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each)

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each) Q. No. WINTER 16 EXAMINATION (Subject Code: 17319) Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer

More information

SYLLABUS OSMANIA UNIVERSITY (HYDERABAD)

SYLLABUS OSMANIA UNIVERSITY (HYDERABAD) UNIT - 1 i SYLLABUS OSMANIA UNIVERSITY (HYDERABAD) JUNCTION DIODE Different Types of PN Junction Formation Techniques, PN Junction Characteristics, Biasing, Band Diagrams and Current Flow, Diode Current

More information

Experiment 8 - Single Stage Amplifiers with Passive Loads - BJT

Experiment 8 - Single Stage Amplifiers with Passive Loads - BJT Experiment 8 - Single Stage Amplifiers with Passie Loads - BJT D. Yee, W.T. Yeung, C. Hsiung, S.M. Mehta, and R.T. Howe UC Berkeley EE 105 1.0 Objectie A typical integrated circuit contains a large number

More information

Homework Assignment 11

Homework Assignment 11 Homework Assignment 11 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =

More information

Department of Electrical Engineering and Computer Sciences, University of California

Department of Electrical Engineering and Computer Sciences, University of California Chapter 8 NOISE, GAIN AND BANDWIDTH IN ANALOG DESIGN Robert G. Meyer Department of Electrical Engineering and Computer Sciences, University of California Trade-offs between noise, gain and bandwidth are

More information

EJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre

EJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre EJECICIOS DE COMPONENTES ELECTÓNICOS. 1 er cuatrimestre 2 o Ingeniería Electrónica Industrial Juan Antonio Jiménez Tejada Índice 1. Basic concepts of Electronics 1 2. Passive components 1 3. Semiconductors.

More information

I E I C since I B is very small

I E I C since I B is very small Figure 2: Symbols and nomenclature of a (a) npn and (b) pnp transistor. The BJT consists of three regions, emitter, base, and collector. The emitter and collector are usually of one type of doping, while

More information

Lecture (06) BJT Amplifiers 3

Lecture (06) BJT Amplifiers 3 Lecture (06) BJT Amplifiers 3 By: Dr. Ahmed ElShafee 1 Current Gain 2 Power Gain The overall power gain is the product of the overall voltage gain (Av ) and the overall current gain (Ai). 3 THE COMMON

More information

Unit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved.

Unit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved. Pearson BTEC Levels 4 Higher Nationals in Engineering (RQF) Unit 19: Electrical and Electronic Principles Unit Workbook 4 in a series of 4 for this unit Learning Outcome 4 Digital & Analogue Electronics

More information

Analog Integrated Circuit Configurations

Analog Integrated Circuit Configurations Analog Integrated Circuit Configurations Basic stages: differential pairs, current biasing, mirrors, etc. Approximate analysis for initial design MOSFET and Bipolar circuits Basic Current Bias Sources

More information

Field Effect Transistors

Field Effect Transistors Field Effect Transistors Purpose In this experiment we introduce field effect transistors (FETs). We will measure the output characteristics of a FET, and then construct a common-source amplifier stage,

More information

Chapter 3: Bipolar Junction Transistors

Chapter 3: Bipolar Junction Transistors Chapter 3: Bipolar Junction Transistors Transistor Construction There are two types of transistors: pnp npn pnp The terminals are labeled: E - Emitter B - Base C - Collector npn 2 Transistor Operation

More information

ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers

ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers ECE 442 Solid State Devices & Circuits 15. Differential Amplifiers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 442 Jose Schutt Aine 1 Background

More information

Code No: R Set No. 1

Code No: R Set No. 1 Code No: R059210404 Set No. 1 II B.Tech I Semester Supplimentary Examinations, February 2008 ELECTRONIC CIRCUIT ANALYSIS ( Common to Electronics & Communication Engineering and Electronics & Telematics)

More information

BJT Characteristics & Common Emitter Transistor Amplifier

BJT Characteristics & Common Emitter Transistor Amplifier LAB #07 Objectives 1. To graph the collector characteristics of a transistor. 2. To measure AC and DC voltages in a common-emitter amplifier. Theory BJT A bipolar (junction) transistor (BJT) is a three-terminal

More information

SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK

SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK Subject with Code : Electronic Circuit Analysis (16EC407) Year & Sem: II-B.Tech & II-Sem

More information

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,

More information

Current Mirrors. Prof. Tai-Haur Kuo, EE, NCKU, Tainan City, Taiwan 4-1

Current Mirrors. Prof. Tai-Haur Kuo, EE, NCKU, Tainan City, Taiwan 4-1 Current Mirrors Prof. Tai-Haur Kuo, EE, NCKU, Tainan City, Taiwan 4- 郭泰豪, Analog C Design, 08 { Prof. Tai-Haur Kuo, EE, NCKU, Tainan City, Taiwan 4- 郭泰豪, Analog C Design, 08 { Current Source and Sink Symbol

More information

4 Transistors. 4.1 IV Relations

4 Transistors. 4.1 IV Relations 4 Transistors Due date: Sunday, September 19 (midnight) Reading (Bipolar transistors): HH sections 2.01-2.07, (pgs. 62 77) Reading (Field effect transistors) : HH sections 3.01-3.03, 3.11-3.12 (pgs. 113

More information