Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs
|
|
- Shavonne Adams
- 5 years ago
- Views:
Transcription
1 Integrated Circuit Amplifiers Comparison of MOSFETs and BJTs 17
2 Typical CMOS Device Parameters 0.8 µm 0.25 µm 0.13 µm Parameter NMOS PMOS NMOS PMOS NMOS PMOS t ox (nm) C ox (ff/µm 2 ) µ (cm 2 /V s) µc ox (µa/v 2 ) V t0 (V) V DD (V) V A (V/µm) C ov (ff/µm) Oxide thickness is decreasing Capacitance increases Increases electric field (V/d) 18
3 Typical CMOS Device Parameters 0.8 µm 0.25 µm 0.13 µm Parameter NMOS PMOS NMOS PMOS NMOS PMOS t ox (nm) C ox (ff/µm 2 ) µ (cm 2 /V s) µc ox (µa/v 2 ) V t0 (V) V DD (V) V A (V/µm) C ov (ff/µm) Reduced device geometry increases transistors/unit area (L 2 ) increases total power dissipation channel length modulation more pronounced increases device speed (i = C dv/dt) 19
4 Typical CMOS Device Parameters 0.8 µm 0.25 µm 0.13 µm Parameter NMOS PMOS NMOS PMOS NMOS PMOS t ox (nm) C ox (ff/µm 2 ) µ (cm 2 /V s) µc ox (µa/v 2 ) V t0 (V) V DD (V) V A (V/µm) C ov (ff/µm) Reduced operating voltage reduces power consumption (CV 2 ) V t is a larger portion of V DD 20
5 Typical BJT Device Parameters Standard high voltage process Advanced low voltage process Parameter npn Lateral pnp npn Lateral pnp A E (µm 2 ) I S (A) 5 x x x x β V A (V) V CE0 (V) t F 350 ps 30 ns 10 ps 650 ps C je0 1 pf 300 ff 5 ff 14 ff C m0 300 ff 1 pf 5 ff 15 ff r x (Ω) Good performance pnp transistors are harder to fabricate on IC than npn (b and forward transit time) 21
6 Typical BJT Device Parameters Standard high voltage process Advanced low voltage process Parameter npn Lateral pnp npn Lateral pnp A E (µm 2 ) I S (A) 5 x x x x β V A (V) V CE0 (V) t F 350 ps 30 ns 10 ps 650 ps C je0 1 pf 300 ff 5 ff 14 ff C m0 300 ff 1 pf 5 ff 15 ff r x (Ω) f T = MHz f T = GHz 22
7 Typical BJT Device Parameters Standard high voltage process Advanced low voltage process Parameter npn Lateral pnp npn Lateral pnp A E (µm 2 ) I S (A) 5 x x x x β V A (V) V CE0 (V) t F 350 ps 30 ns 10 ps 650 ps C je0 1 pf 300 ff 5 ff 14 ff C m0 300 ff 1 pf 5 ff 15 ff r x (Ω) Higher speed technology coupled with lower C-E breakdown voltage 23
8 Electronic Circuits EE359A Bruce McNair B Lecture 12 1
9 MOSFET vs. BJT current-voltage characteristic i C ( v) i D ( v) v The drain current of a MOSFET follows a square law relationship The collector current of a BJT follows an exponential relationship This means that the BJT can control a current that varies over ~5 orders of magnitude, compared to MOSFET current that varies as v OV 2 ( V), or about 1 order of magnitude. 2
10 MOSFET vs. BJT design parameters Significant parameter MOSFET W/L BJT A E (E-B junction area) Range :1 3
11 MOSFET vs. BJT design tradeoffs Available parameters MOSFET I D, V OV, W, L BJT I C, V BE, I S Useful parameters Pick any 3 I C (V BE is related and not very adjustable) 4
12 Differential and Multistage Amplifiers Ch 8 5
13 Noise issues with single ended systems Noise, interference Ground loops, offset reference 6
14 Noise issues with single ended systems Noise, interference Large effective antenna 7
15 DC offset issues with single ended systems offset reference 8
16 Differential benefits + - Differential signal Independent of ground reference + - 9
17 Differential benefits Differential amplification lends itself to twisted pair wiring + - Alternate loops cancel Small antenna loops
18 MOS differential pair MOSFETs are biased for saturation mode operation (not triode region) Resistive loads (for now) Ideal current source 11
19 Common-mode input voltage Assume identical MOSFETs, identical drain resistors 12
20 Common-mode input voltage Range of common mode voltage is limited: I V + V + V + V V V + V R 2 V CS ss CS t OV CM DD t D 13
21 Differential input voltage For all current to flow through Q 1 : 1 W I = k v V 2 L ( ) 2 ' n GS1 t 14
22 Differential input voltage For all current to flow through Q 1 : This determines limits of v id : 1 W I = k v V 2 L ( ) 2 ' n GS1 t 2V v 2V OV id OV 15
23 Differential input voltage For all current to flow through Q 1 : This determines limits of v id : 1 W I = k v V 2 L ( ) 2 ' n GS1 t 2V v 2V OV id OV Both transistors are in saturation, even though one is not conducting 16
24 Large signal operation 1 W i = k v V 2 L ( ) 2 ' D1 n GS1 t 1 W i = k v V 2 L ( ) 2 ' D2 n GS2 t v = v v = v v id GS1 GS 2 G1 G2 17
25 Large signal operation 1 W i = k v V 2 L ( ) 2 ' D1 n GS1 t 1 W i = k v V 2 L ( ) 2 ' D2 n GS2 t v = v v = v v id GS1 GS 2 G1 G2 1 W i i = k v 2 L I = i + i ' D1 D2 n id D1 D2 18
26 Large signal operation 1 W i = k v V 2 L ( ) 2 ' D1 n GS1 t 1 W i = k v V 2 L ( ) 2 ' D2 n GS2 t i D1 v = v v = v v id GS1 GS 2 G1 G2 I I vid vid /2 = VOV 2 VOV 2 1 W i i = k v 2 L I = i + i ' D1 D2 n id D1 D2 i D1 I I vid vid /2 = 1 2 VOV 2 VOV 2 19
27 Large signal operation 20
28 Large signal operation Nonlinear operating characteristics 21
29 Large signal operation Limited linear operating range v id /2 << V OV 22
Electronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 12 1 MOSFET vs. BJT current-voltage characteristic 1.5 10 3 i C ( v) i D ( v) 1 10 3 500 0 2 4 6 8 10 v The drain current
More informationCOMPARISON OF THE MOSFET AND THE BJT:
COMPARISON OF THE MOSFET AND THE BJT: In this section we present a comparison of the characteristics of the two major electronic devices: the MOSFET and the BJT. To facilitate this comparison, typical
More informationChapter 8 Differential and Multistage Amplifiers
1 Chapter 8 Differential and Multistage Amplifiers Operational Amplifier Circuit Components 2 1. Ch 7: Current Mirrors and Biasing 2. Ch 9: Frequency Response 3. Ch 8: Active-Loaded Differential Pair 4.
More informationPreliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B
Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B Problem 1. Consider the following circuit, where a saw-tooth voltage is applied
More informationLecture 21 - Multistage Amplifiers (I) Multistage Amplifiers. November 22, 2005
6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 2 Lecture 2 Multistage Amplifiers (I) Multistage Amplifiers November 22, 2005 Contents:. Introduction 2. CMOS multistage voltage amplifier 3.
More informationECE 546 Lecture 12 Integrated Circuits
ECE 546 Lecture 12 Integrated Circuits Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine 1 Integrated Circuits IC Requirements
More informationECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers
ECE 442 Solid State Devices & Circuits 15. Differential Amplifiers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 442 Jose Schutt Aine 1 Background
More informationMultistage Amplifiers
Multistage Amplifiers Single-stage transistor amplifiers are inadequate for meeting most design requirements for any of the four amplifier types (voltage, current, transconductance, and transresistance.)
More informationV o. ECE2280 Homework #1 Fall Use: ignore r o, V BE =0.7, β=100 V I = sin(20t) For DC analysis, assume that the capacitors are open
ECE2280 Homework #1 Fall 2011 1. Use: ignore r o, V BE =0.7, β=100 V I = 200.001sin(20t) For DC analysis, assume that the capacitors are open (a) Solve for the DC currents: a. I B b. I E c. I C (b) Solve
More informationQUESTION BANK for Analog Electronics 4EC111 *
OpenStax-CNX module: m54983 1 QUESTION BANK for Analog Electronics 4EC111 * Bijay_Kumar Sharma This work is produced by OpenStax-CNX and licensed under the Creative Commons Attribution License 4.0 Abstract
More information6.012 Microelectronic Devices and Circuits
Page 1 of 13 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Microelectronic Devices and Circuits Final Eam Closed Book: Formula sheet provided;
More informationMicroelectronics Exercises of Topic 5 ICT Systems Engineering EPSEM - UPC
Microelectronics Exercises of Topic 5 ICT Systems Engineering EPSEM - UPC F. Xavier Moncunill Autumn 2018 5 Analog integrated circuits Exercise 5.1 This problem aims to follow the steps in the design of
More informationLaboratory 1 Single-Stage MOSFET Amplifier Analysis and Design Due Date: Week of February 20, 2014, at the beginning of your lab section
Laboratory 1 Single-Stage MOSFET Amplifier Analysis and Design Due Date: Week of February 20, 2014, at the beginning of your lab section Objective To analyze and design single-stage common source amplifiers.
More informationElectronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 20 496 Power BJTs Collector currents in the multi-ampere range Multi-watt power dissipation Achieved by: High temperature
More informationBuilding Blocks of Integrated-Circuit Amplifiers
Building Blocks of ntegrated-circuit Amplifiers 1 The Basic Gain Cell CS and CE Amplifiers with Current Source Loads Current-source- or active-loaded CS amplifier Rin A o R A o g r r o g r 0 m o m o Current-source-
More informationElectronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 18 488 Class C operation 4 2 h( t) 0 2 4 0 0.2 0.4 0.6 0.8 t 0 ( ) 20 log A j 20 40 60 0 10 20 30 Cconduction_angle
More informationBJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
More informationMetal Oxide Semiconductor Field-Effect Transistors (MOSFETs)
Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Device Structure N-Channel MOSFET Providing electrons Pulling electrons (makes current flow) + + + Apply positive voltage to gate: Drives away
More informationEE 140 / EE 240A ANALOG INTEGRATED CIRCUITS FALL 2015 C. Nguyen PROBLEM SET #7
Issued: Friday, Oct. 16, 2015 PROBLEM SET #7 Due (at 8 a.m.): Monday, Oct. 26, 2015, in the EE 140/240A HW box near 125 Cory. 1. A design error has resulted in a mismatch in the circuit of Fig. PS7-1.
More informationDepartment of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
More informationCHAPTER 8 DIFFERENTIAL AND MULTISTAGE AMPLIFIERS
CHAPTER 8 DIFFERENTIAL AND MULTISTAGE AMPLIFIERS Chapter Outline 8.1 The CMOS Differential Pair 8. Small-Signal Operations of the MOS Differential Pair 8.3 The BJT Differential Pair 8.4 Other Non-ideal
More informationField-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
More informationAnalog Integrated Circuit Design Exercise 1
Analog Integrated Circuit Design Exercise 1 Integrated Electronic Systems Lab Prof. Dr.-Ing. Klaus Hofmann M.Sc. Katrin Hirmer, M.Sc. Sreekesh Lakshminarayanan Status: 21.10.2015 Pre-Assignments The lecture
More informationMetal-Oxide-Silicon (MOS) devices PMOS. n-type
Metal-Oxide-Silicon (MOS devices Principle of MOS Field Effect Transistor transistor operation Metal (poly gate on oxide between source and drain Source and drain implants of opposite type to substrate.
More informationEE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND
More informationChapter 7 Building Blocks of Integrated Circuit Amplifiers: Part D: Advanced Current Mirrors
1 Chapter 7 Building Blocks of Integrated Circuit Amplifiers: Part D: Advanced Current Mirrors Current Mirror Example 2 Two Stage Op Amp (MOSFET) Current Mirror Example Three Stage 741 Opamp (BJT) 3 4
More informationBuilding Blocks of Integrated-Circuit Amplifiers
CHAPTER 7 Building Blocks of Integrated-Circuit Amplifiers Introduction 7. 493 IC Design Philosophy 7. The Basic Gain Cell 494 495 7.3 The Cascode Amplifier 506 7.4 IC Biasing Current Sources, Current
More informationF9 Differential and Multistage Amplifiers
Lars Ohlsson 018-10-0 F9 Differential and Multistage Amplifiers Outline MOS differential pair Common mode signal operation Differential mode signal operation Large signal operation Small signal operation
More informationEE 230 Lab Lab 9. Prior to Lab
MOS transistor characteristics This week we look at some MOS transistor characteristics and circuits. Most of the measurements will be done with our usual lab equipment, but we will also use the parameter
More informationApplied Electronics II
Applied Electronics II Chapter 2: Differential Amplifier School of Electrical and Computer Engineering Addis Ababa Institute of Technology Addis Ababa University Daniel D./Abel G. April 4, 2016 Chapter
More informationD n ox GS THN DS GS THN DS GS THN. D n ox GS THN DS GS THN DS GS THN
Name: EXAM #3 Closed book, closed notes. Calculators may be used for numeric computations only. All work is to be your own - show your work for maximum partial credit. Data: Use the following data in all
More informationMICROELECTRONIC CIRCUIT DESIGN Third Edition
MICROELECTRONIC CIRCUIT DESIGN Third Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 1/25/08 Chapter 1 1.3 1.52 years, 5.06 years 1.5 1.95 years, 6.46 years 1.8 113
More informationWeek 12: Output Stages, Frequency Response
ELE 2110A Electronic Circuits Week 12: Output Stages, Frequency esponse (2 hours only) Lecture 12-1 Output Stages Topics to cover Amplifier Frequency esponse eading Assignment: Chap 15.3, 16.1 of Jaeger
More informationECE 3110: Engineering Electronics II Fall Final Exam. Dec. 16, 8:00-10:00am. Name: (78 points total)
Final Exam Dec. 16, 8:00-10:00am Name: (78 points total) Problem 1: Consider the emitter follower in Fig. 7, which is being used as an output stage. For Q 1, assume β = and initally assume that V BE =
More informationELEC 350L Electronics I Laboratory Fall 2012
ELEC 350L Electronics I Laboratory Fall 2012 Lab #9: NMOS and CMOS Inverter Circuits Introduction The inverter, or NOT gate, is the fundamental building block of most digital devices. The circuits used
More informationLecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1
Lecture 16 Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Outline Complementary metal oxide semiconductor (CMOS) Inverting circuit Properties Operating points Propagation delay Power dissipation
More informationField Effect Transistors
Field Effect Transistors LECTURE NO. - 41 Field Effect Transistors www.mycsvtunotes.in JFET MOSFET CMOS Field Effect transistors - FETs First, why are we using still another transistor? BJTs had a small
More informationChapter 5. Operational Amplifiers and Source Followers. 5.1 Operational Amplifier
Chapter 5 Operational Amplifiers and Source Followers 5.1 Operational Amplifier In single ended operation the output is measured with respect to a fixed potential, usually ground, whereas in double-ended
More informationEE105 Fall 2015 Microelectronic Devices and Circuits
EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of
More informationSAMPLE FINAL EXAMINATION FALL TERM
ENGINEERING SCIENCES 154 ELECTRONIC DEVICES AND CIRCUITS SAMPLE FINAL EXAMINATION FALL TERM 2001-2002 NAME Some Possible Solutions a. Please answer all of the questions in the spaces provided. If you need
More informationDESIGN OF A FULLY DIFFERENTIAL HIGH-SPEED HIGH-PRECISION AMPLIFIER
DESIGN OF A FULLY DIFFERENTIAL HIGH-SPEED HIGH-PRECISION AMPLIFIER Mayank Gupta mayank@ee.ucla.edu N. V. Girish envy@ee.ucla.edu Design I. Design II. University of California, Los Angeles EE215A Term Project
More informationUNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
More informationproblem grade total
Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo Name: Recitation: November 16, 2005 Quiz #2 problem grade 1 2 3 4 total General guidelines (please read carefully before starting):
More informationVoltage Biasing Considerations (From the CS atom toward the differential pair atom) Claudio Talarico, Gonzaga University
Voltage Biasing Considerations (From the CS atom toward the differential pair atom) Claudio Talarico, Gonzaga University Voltage Biasing Considerations In addition to bias currents, building a complete
More informationLecture 020 ECE4430 Review II (1/5/04) Page 020-1
Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught
More informationLecture 020 ECE4430 Review II (1/5/04) Page 020-1
Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught
More informationLaboratory #5 BJT Basics and MOSFET Basics
Laboratory #5 BJT Basics and MOSFET Basics I. Objectives 1. Understand the physical structure of BJTs and MOSFETs. 2. Learn to measure I-V characteristics of BJTs and MOSFETs. II. Components and Instruments
More informationChapter 13: Introduction to Switched- Capacitor Circuits
Chapter 13: Introduction to Switched- Capacitor Circuits 13.1 General Considerations 13.2 Sampling Switches 13.3 Switched-Capacitor Amplifiers 13.4 Switched-Capacitor Integrator 13.5 Switched-Capacitor
More informationUniversity of Pittsburgh
University of Pittsburgh Experiment #4 Lab Report MOSFET Amplifiers and Current Mirrors Submission Date: 07/03/2018 Instructors: Dr. Ahmed Dallal Shangqian Gao Submitted By: Nick Haver & Alex Williams
More information4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.
More informationWeek 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model
Week 9a OUTLINE MOSFET I vs. V GS characteristic Circuit models for the MOSFET resistive switch model small-signal model Reading Rabaey et al.: Chapter 3.3.2 Hambley: Chapter 12 (through 12.5); Section
More informationUNIT I BIASING OF DISCRETE BJT AND MOSFET PART A
UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression
More informationSolid State Devices & Circuits. 18. Advanced Techniques
ECE 442 Solid State Devices & Circuits 18. Advanced Techniques Jose E. Schutt-Aine Electrical l&c Computer Engineering i University of Illinois jschutt@emlab.uiuc.edu 1 Darlington Configuration - Popular
More information55:041 Electronic Circuits
55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width = 1 10-6 m or less Thickness = 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor
More informationEECE2412 Final Exam. with Solutions
EECE2412 Final Exam with Solutions Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University Fall Semester 2010 My file 11480/exams/final General Instructions:
More informationOperational Amplifiers Part I of VI What Does Rail-to-Rail Input Really Mean? by Bonnie C. Baker Microchip Technology, Inc.
Operational Amplifiers Part I of VI What Does Rail-to-Rail Input Really Mean? by Bonnie C. Baker Microchip Technology, Inc. bonnie.baker@microchip.com Some single-supply operational amplifier advertisements
More informationChapter 4. CMOS Cascode Amplifiers. 4.1 Introduction. 4.2 CMOS Cascode Amplifiers
Chapter 4 CMOS Cascode Amplifiers 4.1 Introduction A single stage CMOS amplifier cannot give desired dc voltage gain, output resistance and transconductance. The voltage gain can be made to attain higher
More informationWeek 7: Common-Collector Amplifier, MOS Field Effect Transistor
EE 2110A Electronic Circuits Week 7: Common-Collector Amplifier, MOS Field Effect Transistor ecture 07-1 Topics to coer Common-Collector Amplifier MOS Field Effect Transistor Physical Operation and I-V
More informationLecture 3 Switched-Capacitor Circuits Trevor Caldwell
Advanced Analog Circuits Lecture 3 Switched-Capacitor Circuits Trevor Caldwell trevor.caldwell@analog.com Lecture Plan Date Lecture (Wednesday 2-4pm) Reference Homework 2017-01-11 1 MOD1 & MOD2 ST 2, 3,
More informationChapter 6. Single-stage integrated-circuit amplifier
hapter 6. Single-stage integrated-circuit amplifier ntroduction 6. design philosophy 6. omparison of the MSFET and the BJT 6.3 biasing-current - sources, mirrors and steering circuits 6.4 High-frequency
More informationChapter 15 Goals. ac-coupled Amplifiers Example of a Three-Stage Amplifier
Chapter 15 Goals ac-coupled multistage amplifiers including voltage gain, input and output resistances, and small-signal limitations. dc-coupled multistage amplifiers. Darlington configuration and cascode
More informationCourse Number Section. Electronics I ELEC 311 BB Examination Date Time # of pages. Final August 12, 2005 Three hours 3 Instructor
Course Number Section Electronics ELEC 311 BB Examination Date Time # of pages Final August 12, 2005 Three hours 3 nstructor Dr. R. Raut M aterials allowed: No Yes X (Please specify) Calculators allowed:
More informationIntroduction to VLSI ASIC Design and Technology
Introduction to VLSI ASIC Design and Technology Paulo Moreira CERN - Geneva, Switzerland Paulo Moreira Introduction 1 Outline Introduction Is there a limit? Transistors CMOS building blocks Parasitics
More informationMOSFET Amplifier Configuration. MOSFET Amplifier Configuration
MOSFET Amplifier Configuration Single stage The signal is fed to the amplifier represented as sig with an internal resistance sig. MOSFET is represented by its small signal model. Generally interested
More informationLecture 26 - Design Problems & Wrap-Up. May 15, 2003
6.012 Microelectronic Devices and Circuits - Spring 2003 Lecture 26-1 Lecture 26 - Design Problems & 6.012 Wrap-Up May 15, 2003 Contents: 1. Design process 2. Design project pitfalls 3. Lessons learned
More informationLinear electronic. Lecture No. 1
1 Lecture No. 1 2 3 4 5 Lecture No. 2 6 7 8 9 10 11 Lecture No. 3 12 13 14 Lecture No. 4 Example: find Frequency response analysis for the circuit shown in figure below. Where R S =4kR B1 =8kR B2 =4k R
More informationIndex. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10
Index A absolute value, 308 additional pole, 271 analog multiplier, 190 B BiCMOS,107 Bode plot, 266 base-emitter voltage, 16, 50 base-emitter voltages, 296 bias current, 111, 124, 133, 137, 166, 185 bipolar
More information55:041 Electronic Circuits
55:041 Electronic Circuits Mosfet Review Sections of Chapter 3 &4 A. Kruger Mosfet Review, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width 1 10-6 m or less Thickness 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor
More informationECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model
Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand
More informationThe Miller Approximation. CE Frequency Response. The exact analysis is worked out on pp of H&S.
CE Frequency Response The exact analysis is worked out on pp. 639-64 of H&S. The Miller Approximation Therefore, we consider the effect of C µ on the input node only V ---------- out V s = r g π m ------------------
More informationUnit 3: Integrated-circuit amplifiers (contd.)
Unit 3: Integrated-circuit amplifiers (contd.) COMMON-SOURCE AND COMMON-EMITTER AMPLIFIERS The Common-Source Circuit The most basic IC MOS amplifier is shown in fig.(1). The source of MOS transistor is
More informationCMOS Cascode Transconductance Amplifier
CMOS Cascode Transconductance Amplifier Basic topology. 5 V I SUP v s V G2 M 2 iout C L v OUT Device Data V Tn = 1 V V Tp = 1 V µ n C ox = 50 µa/v 2 µ p C ox = 25 µa/v 2 λ n = 0.05 V 1 λ p = 0.02 V 1 @
More informationMOS Field-Effect Transistors (MOSFETs)
6 MOS Field-Effect Transistors (MOSFETs) A three-terminal device that uses the voltages of the two terminals to control the current flowing in the third terminal. The basis for amplifier design. The basis
More informationMOSFET & IC Basics - GATE Problems (Part - I)
MOSFET & IC Basics - GATE Problems (Part - I) 1. Channel current is reduced on application of a more positive voltage to the GATE of the depletion mode n channel MOSFET. (True/False) [GATE 1994: 1 Mark]
More informationOperational Amplifiers
CHAPTER 9 Operational Amplifiers Analog IC Analysis and Design 9- Chih-Cheng Hsieh Outline. General Consideration. One-Stage Op Amps / Two-Stage Op Amps 3. Gain Boosting 4. Common-Mode Feedback 5. Input
More informationCourse Outline. 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)
Course Outline 1. Chapter 1: Signals and Amplifiers 1 2. Chapter 3: Semiconductors 3. Chapter 4: Diodes 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)
More informationStudent Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004
Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Lecture outline Historical introduction Semiconductor devices overview Bipolar Junction Transistor (BJT) Field
More informationPhysics 364, Fall 2012, reading due your answers to by 11pm on Thursday
Physics 364, Fall 2012, reading due 2012-10-25. Email your answers to ashmansk@hep.upenn.edu by 11pm on Thursday Course materials and schedule are at http://positron.hep.upenn.edu/p364 Assignment: (a)
More informationGeorgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam
Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number
More informationMICROELECTRONIC CIRCUIT DESIGN Fifth Edition
MICROELECTRONIC CIRCUIT DESIGN Fifth Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 07/05/15 Chapter 1 1.5 1.52 years, 5.06 years 1.6 1.95 years, 6.52 years 1.9 402
More informationLecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1
Lecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1 LECTURE 190 CMOS TECHNOLOGY-COMPATIBLE DEVICES (READING: Text-Sec. 2.9) INTRODUCTION Objective The objective of this presentation is
More informationCurrent Mirrors. Prof. Tai-Haur Kuo, EE, NCKU, Tainan City, Taiwan 4-1
Current Mirrors Prof. Tai-Haur Kuo, EE, NCKU, Tainan City, Taiwan 4- 郭泰豪, Analog C Design, 08 { Prof. Tai-Haur Kuo, EE, NCKU, Tainan City, Taiwan 4- 郭泰豪, Analog C Design, 08 { Current Source and Sink Symbol
More informationLECTURE 09 LARGE SIGNAL MOSFET MODEL
Lecture 9 Large Signal MOSFET Model (5/14/18) Page 9-1 LECTURE 9 LARGE SIGNAL MOSFET MODEL LECTURE ORGANIZATION Outline Introduction to modeling Operation of the MOS transistor Simple large signal model
More informationDepletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET
Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage
More informationCode: 9A Answer any FIVE questions All questions carry equal marks *****
II B. Tech II Semester (R09) Regular & Supplementary Examinations, April/May 2012 ELECTRONIC CIRCUIT ANALYSIS (Common to EIE, E. Con. E & ECE) Time: 3 hours Max Marks: 70 Answer any FIVE questions All
More informationAdvanced Operational Amplifiers
IsLab Analog Integrated Circuit Design OPA2-47 Advanced Operational Amplifiers כ Kyungpook National University IsLab Analog Integrated Circuit Design OPA2-1 Advanced Current Mirrors and Opamps Two-stage
More informationReading. Lecture 33: Context. Lecture Outline. Chapter 9, multi-stage amplifiers. Prof. J. S. Smith
eading Lecture 33: Chapter 9, multi-stage amplifiers Prof J. S. Smith Context Lecture Outline We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources
More informationField Effect Transistors (FET s) University of Connecticut 136
Field Effect Transistors (FET s) University of Connecticut 136 Field Effect Transistors (FET s) FET s are classified three ways: by conduction type n-channel - conduction by electrons p-channel - conduction
More informationThe Differential Amplifier. BJT Differential Pair
1 The Differential Amplifier Asst. Prof. MONTREE SRPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s nstitute of Technology North Bangkok
More informationAnalysis and Design of Analog Integrated Circuits Lecture 8. Cascode Techniques
Analysis and Design of Analog Integrated Circuits Lecture 8 Cascode Techniques Michael H. Perrott February 15, 2012 Copyright 2012 by Michael H. Perrott All rights reserved. Review of Large Signal Analysis
More informationMicroelectronic Circuits II. Ch 10 : Operational-Amplifier Circuits
Microelectronic Circuits II Ch 0 : Operational-Amplifier Circuits 0. The Two-stage CMOS Op Amp 0.2 The Folded-Cascode CMOS Op Amp CNU EE 0.- Operational-Amplifier Introduction - Analog ICs : operational
More informationMOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.
MOSFET Terminals The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. For an n-channel MOSFET, the SOURCE is biased at a lower potential (often
More informationLecture 33: Context. Prof. J. S. Smith
Lecture 33: Prof J. S. Smith Context We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources and cascode connected devices, and we will also look at
More informationINTRODUCTION TO ELECTRONICS EHB 222E
INTRODUCTION TO ELECTRONICS EHB 222E MOS Field Effect Transistors (MOSFETS II) MOSFETS 1/ INTRODUCTION TO ELECTRONICS 1 MOSFETS Amplifiers Cut off when v GS < V t v DS decreases starting point A, once
More informationChapter 12 Opertational Amplifier Circuits
1 Chapter 12 Opertational Amplifier Circuits Learning Objectives 1) The design and analysis of the two basic CMOS op-amp architectures: the two-stage circuit and the single-stage, folded cascode circuit.
More informationEE 330 Lecture 20. Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling
EE 330 Lecture 20 Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling Review from Last Lecture Simplified Multi-Region Model Alternate equivalent model
More informationDesign cycle for MEMS
Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor
More informationSolid State Devices- Part- II. Module- IV
Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the
More informationAnalog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics F2 Active power devices»mos»bjt» IGBT, TRIAC» Safe Operating Area» Thermal analysis 30/05/2012-1 ATLCE - F2-2011 DDC Lesson F2:
More informationElectronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 4 0 Bipolar Junction Transistors (BJT) Small Signal Analysis Graphical Analysis / Biasing Amplifier, Switch and Logic
More information