UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A
|
|
|
- Marion Ray
- 6 years ago
- Views:
Transcription
1 UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression for stability factor. 4. List out the different types of biasing. 5. What do you meant by thermal runway? 6. Why the transistor is called a current controlled device? 7. Define current amplification factor? 8. What are the requirements for biasing circuits? 9. When does a transistor act as a switch? 10. What is biasing? 11. What is operating point? 12. What is stability factor? 13. What is DC load line? 14. What are the advantages of fixed bias circuit? 15. Explain about the various regions in a transistor? 16. Explain about the characteristics of a transistor? 17. What is the necessary of the coupling capacitor? 18. What is reverse saturation current? 19. Why is the operating point selected at the Centre of the active region? 20. What are the basic rules of an operating amplifier? 1. Explain the voltage divider bias method & derive an expression for stability factors. 2. Why biasing is necessary in BJT amplifier? Explain the concept of DC & AC load line with neat diagram. How will you select the operating point, explain it using CE amplifier characteristics? 3. Explain the collector feedback bias amplifier & derive an expression for stability factors. 4. Explain the fixed bias method & derive an expression for stability factors. 5. Derive an expression for all stability factors & CE configuration S equation. 6. Explain about common source self- bias & voltage divider bias for FET. 7. Explain in details about biasing MOSFET. 8. Discuss the various types of bias compensation. 9. The fixed bias circuit as shown in figure is subjected to an increase in junction temperature from 25oC to 75oC. If β is 125 at 75oC. Determine the percentage change in Q point values (Vce, Ic) over temperature change. Neglect any change in VBE. 10. A self bias circuit has RE=1 kω, R1=130 kω, R2=10 kω. If Vcc and Rc are adjusted to give Ic=1mA at 10oC. Calculate the variation in Ic over temperature change of 10oC to 100oC. The transistor used has the parameters given below, Parame 10oC 100oC ters Ico (μa) VBE(v) β
2 UNIT II BJT AMPLIFIERS PART A 1. What is an amplifier? 2. How are amplifiers classified according to the input? 3. How are amplifiers classified according to the transistor configuration? 4. What is the different analysis available to analyze a transistor? 5. How can a DC equivalent circuit of an amplifier be obtained? 6. How can an AC equivalent circuit of an amplifier be obtained? 7. Define Common Mode Rejection Ratio. 8. State Miller s Theorem. 9. What are the various h-parameters for a CE transistor? 13. What is the typical value of CMRR? How the constant current circuit is used to improve the CMRR? 10. Find the value of αdc when Ic=8.2mA and Ie=8.7mA. 11. What are the benefits of h-parameters? 12. What is the coupling schemes used in multistage amplifiers? 13. What is the role of coupling network in multistage amplifiers? 14. Define voltage & current gain of an emitter follower. 15. What is meant by power gain? 16. What does bootstrapping mean? 17. Why bootstrapping is done in a buffer amplifier? 18. Draw the Darlington emitter follower circuit. 19. Why CE amplifier better than CC & CB amplifiers? 20. What is the difference between cascade and cascode amplifier? 1. Draw a CE amplifier & its small signal equivalent. Derive its Avs, Ai, Rin, Ro. 2. Explain with circuit diagram of Darlington connection and derive the expression for Ai, Av, Ri &Ro. 3. Explain Bootstrap emitter follower circuit. Compare CE, CB, CC amplifiers. 4. Derive expression for voltage gain of CS & CD amplifier under small signal low frequency condition. 5. Explain the emitter coupled differential amplifier with neat diagram & Derive expression for CMRR. 6. Discuss transfer characteristics of differential amplifier. Explain the methods used to improve CMRR. 7. Write short notes on multistage amplifiers & Draw a two stage RC coupled amplifier and explain. Compare cascade and cascode amplifier? 8. Derive the expressions for the voltage gain, current gain, input and output impedance of emitter follower amplifier. 9. Derive the expressions for the common mode and differential mode gains of a differential amplifier in terms of h-parameters. 10. Consider a single stage CE amplifier with Rs=1kΩ, R1=50KΩ, R2=2KΩ, RC=2KΩ, RL=2KΩ, hfe=50, hie=1.1 KΩ, hoe=25μmho, hre= Find Ai,Ri,Av,Ais,Avs and R0.
3 11. The Darlington amplifier has the following parameters, Rs=3kΩ, RE=3kΩ, hie=1.1 KΩ, hfe=50, hre= , hoe=25μmho. Then calculate Ai, Ri, Av and R The dual input balanced output differential amplifier having Rs=100Ω, RC=4.7KΩ, RE=6.8KΩ, hfe=100, Vcc=+15v and VEE=-15v. Calculate operating point values, differential & common mode gain, CMRR, and output if VS1= 70mV(p-p) at 1 KHz & VS2= 40mV(p-p) at 1 KHz
4 UNIT III JFET AND MOSFET AMPLIFIERS PART A 1. What is meant by small signal? 2. What is the physical meaning of small signal parameter ro? 3. Write the equation for small signal condition that must be satisfied for linear amplifiers. 4. Draw the small signal equivalent circuit common source NMOS. 5. What is another name for common drain amplifier? 6. Draw the source follower amplifier circuit. 7. List the applications of MOSFET amplifiers. 8. Compare the characteristics of three MOSFET amplifier configurations. 9. Draw the small signal equivalent JFET common source circuit. 10. How does a transistor width-to-length ratio affect the small signal voltage gain of a common source amplifier? 11. How a MOSFET can be used to amplify a time varying voltage? 12. How does body effect change the small signal equivalent of the MOSFET? 13. Why in general the magnitude of the voltage gain of a common source amplifier relatively small? 14. What is voltage swing limitation? 15. What is the general condition under which a common gate amplifier would be used? 16. State the general advantage of using transistors in place of resistors in integrated circuits. 17. Give one reason why a JFET might be used as an input device in a circuit as proposed to a MOSFET. 18. What are features of cascode amplifiers? 19. What are the applications of BiCMOS? 20. Discuss one advantage of BiCMOS circuit. 1. Describe the operation and analyze the basic JFET amplifier circuits. 2. Derive the small signal analysis of common source amplifier. 3. Develop a small signal model of JFET device and analyze basic JFET amplifiers. 4. Explain graphically the amplification process in a simple MOSFET amplifier circuit. 5. Describe the small signal equivalent circuit of the MOSFET and determine the values of small signal parameters? 6. Sketch the small signal high frequency circuit of a common source amplifier & derive the expression for a voltage gain, input & output admittance and input capacitance. 7. Sketch a simple source-follower amplifier circuit and discuss the general ac circuit characteristics. 8. Characterize the voltage gain and output resistance of a common-gate amplifier.
5 9. Apply the MOSFET small signal equivalent circuit in the analysis of multistage amplifier circuits. 10. Explain common source amplifier with source resistor and source bypass capacitor. 11. Write short notes Voltage swing limitations, general conditions under which a source follower amplifier would be used. 12. Describe the characteristics of and analyze BiCMOS circuits.
6 PART A UNIT IV FREQUENCY ANALYSIS OF BJT AND MOSFET AMPLIFIERS 1. Draw the frequency response curve of an amplifier. 2. What is the bandwidth of an amplifier? 3. Define rise time. 4. What kind of techniques required increasing the input impedance? 5. Give relation between rise time and bandwidth. 6. Give the main reason for the drop in gain at the low frequency region & high frequency region. 7. If the rise time of BJT is 35nS, what is the bandwidth that can be obtained using this BJT? 8. For an amplifier, mid band gain is 100 & lower cutoff frequency is 20KHz. Find the gain of an amplifier at frequency 20Hz. 9. For an amplifier, 3dB gain is 200 & higher cutoff frequency is 20KHz. Find the gain of an amplifier at frequency 100KHz. 10. Why common base amplifier is preferred for high frequency signal when compared to CE amplifier? 11. Draw the hybrid π equivalent circuit of BJTs. 12. What is the difference between small signal equivalent & hybrid π equivalent circuit. 13. What is high frequency effect? 14. What are the causes for occurrence of upper cutoff frequency in BJT? 15. What is Miller s effect? What is gain bandwidth product? 16. Give equation of overall lower and upper cutoff frequency of multistage amplifier. 17. What is significance of octaves and decades in frequency response? 18. What are the causes for occurrence of upper cutoff frequency in BJT? 19. What is the major contribution to the Miller capacitance in a MOSFET? 20. Define cut off frequency for a MOSFET. 1. With neat sketch explain hybrid π CE transistor model. Derive the expression for various components in terms of h parameters. 2. Discuss the frequency response of multistage amplifiers. Calculate the overall upper & lower cutoff frequencies. 3. Discuss the low frequency response & the high frequency response of an amplifier. Derive its cutoff frequencies. 4. Discuss the terms rise time and sag. 5. Write short notes on high frequency amplifier. 6. Derive the gain bandwidth for high frequency FET amplifiers.
7 7. Derive the expression for the CE short circuit current gain of transistor at high frequency 8. What is the effect of Cb e on the input circuit of a BJT amplifier at High frequencies? Derive the equation for gm which gives the relation between gm, Ic and temperature. 9. Explain the high frequency analysis of JFET with necessary circuit diagram & gain bandwidth product. 10. Discuss the frequency response of MOSFET CS amplifier. 11. Determine the bandwidth of CE amplifier with the following specifications. R1=100kΩ, R2=10kΩ, RC=9kΩ, RE=2kΩ, C1= C2=25μF, CE=50μF, rbb =100Ω, rb e=1.1kω, hfe=225, Cb e=3pf and Cb c=100pf. 12. At Ic=1mA & VCE=10v, a certain transistor data shows Cc=Cb c=3pf, hfe=200, & ωt=-500m rad/sec. Calculate gm, rb e, Ce=Cb e & ωβ.
8 UNIT V IC MOSFET AMPLIFIERS PART A 1. What are the basic processes in integrated circuit fabrication? 2. Define common mode rejection ration? What is the ideal value? 3. Sketch the DC transfer characteristics of a MOSFET differential amplifier. 4. What are the advantages of an active load? 5. What is the impedance seen looking into a simple active load? 6. How the reference portion of the circuit can be designed with MOSFETs only. 7. How should a MOSFET be biased so as to operate as a stable current source? 8. Draw the circuit of MOSFET differential amplifier with active load. 9. What is the need for MOSFET differential amplifier with cascode active load? 10. What is meant by matched transistors? 11. Define common mode and differential mode input resistance and voltages. 12. What are the limiting factors for the maximum current in MOSFET? 13. Define enhancement and depletion mode of MOSFET. 14. Define saturation and non- saturation bias regions. 15. How do you prove that a MOSFET is biased in the saturation region? 16. Draw MOSFET cascode current source circuit. 17. What is another name of two transistor current source? 18. Draw the two transistor MOSFET current source. 19. What is Widlar current source 20. What is cascode current mirror? 1. Describe the operation of an NMOS amplifier with either an enhancement load, a depletion load, or a PMOS load. 2. Explain the basic MOSFET two transistor current circuits and discuss its operation. 3. Draw the MOSFET cascode current source circuit, explain and discuss the advantage of this design. 4. Sketch and describe the advantages of a MOSFET cascode current source used with a MOSFET differential amplifier. 5. Design a CMOS differential amplifier with an output gain stage to meet a set of specifications. The magnitude of voltage gain of each stage is to be at least 600. Bias currents are to be IQ=IREF=100μA, and biasing of the circuit is to be V+=2.5 v and V-=2.5 v. 6. Explain CMOS differential amplifier and derive CMRR. 7. Draw a Widlar current source and explain the operation. 8. Describe the operation of a PMOS amplifier with an enhancement load, a depletion load. 9. Explain the CMOS common source and source follower with neat diagram.
9 10. Explain the large signal behavior of MOSFETs and compare the operating regions of Bipolar and MOS transistors. 11. Discuss the operation of active load and discuss the advantages of MOSFET cascode current circuit. 12. Explain in detail about CMOS common source and source follower with neat diagram.
Vel Tech High Tech Dr.Ranagarajan Dr.Sakunthala Engineering College Department of ECE
Course Code: EC8351 Course Name: ELECTRONIC CIRCUITS I L-3 : T-0 : P-0 : Credits - 3 COURSE OBJECTIVES: To understand the methods of biasing transistors To design and analyze single stage and multistage
Pg: 1 VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203 Department of Electronics & Communication Engineering Regulation: 2013 Acadamic Year : 2015 2016 EC6304 Electronic Circuits I Question
Small signal ac equivalent circuit of BJT
UNIT-2 Part A 1. What is an ac load line? [N/D 16] A dc load line gives the relationship between the q-point and the transistor characteristics. When capacitors are included in a CE transistor circuit,
EC1203: ELECTRONICS CIRCUITS-I UNIT-I TRANSISTOR BIASING PART-A
SHRI ANGALAMMAN COLLEGE OF ENGG & TECH., TRICHY 621105 (Approved by AICTE, New Delhi and Affiliated to Anna University Chennai/Trichy) ( ISO 9001:2008 Certified Institution) DEPARTMENT OF ELECTRONICS &
BJT Circuits (MCQs of Moderate Complexity)
BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r
Unit- I- Biasing Of Discrete BJT and MOSFET
Part- A QUESTIONS: Unit- I- Biasing Of Discrete BJT and MOSFET 1. Describe about BJT? BJT consists of 2 PN junctions. It has three terminals: emitter, base and collector. Transistor can be operated in
Skyup's Media ELECTRONIC CIRCUIT ANALYSIS
ELECTRONIC CIRCUIT ANALYSIS MALLAREDDY COLLEGE OF ENGINEERING AND TECHNOLOGY DEPARTMENT OF ELECTROINICS AND COMMUNICATION ENGINEERING Answer all the following questions: PART A: B.TECH II YEAR II SEMESTER
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK Subject with Code : Electronic Circuit Analysis (16EC407) Year & Sem: II-B.Tech & II-Sem
(a) BJT-OPERATING MODES & CONFIGURATIONS
(a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base
FREQUENTLY ASKED QUESTIONS
FREQUENTLY ASKED QUESTIONS UNIT-1 SUBJECT : ELECTRONIC DEVICES AND CIRCUITS SUBJECT CODE : EC6202 BRANCH: EEE PART -A 1. What is meant by diffusion current in a semi conductor? (APR/MAY 2010, 2011, NOV/DEC
SKP Engineering College
SKP Engineering College Tiruvannamalai 606611 A Course Material on Electronic Circuits I By M.Jerin Jose Assistant Professor Electronics and Communication Engineering Department Electronics and Communication
Electronic Circuits II - Revision
Electronic Circuits II - Revision -1 / 16 - T & F # 1 A bypass capacitor in a CE amplifier decreases the voltage gain. 2 If RC in a CE amplifier is increased, the voltage gain is reduced. 3 4 5 The load
II/IV B. TECH. DEGREE EXAMINATIONS, NOVEMBER Second Semester EC/EE ELECTRONIC CIRCUIT ANALYSIS. Time : Three Hours Max.
Total No. of Questions : 9] [Total No. of Pages : 02 B.Tech. II/ IV YEAR DEGREE EXAMINATION, APRIL/MAY - 2014 (Second Semester) EC/EE/EI Electronic Circuit Analysis Time : 03 Hours Maximum Marks : 70 Q1)
INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad
INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad -500 043 COMPUTER SCIENCE AND ENGINEERING TUTORIAL QUESTION BANK Course Name : ELECTRONIC DEVICES AND CIRCUITS Course Code : A30404
Multistage Amplifiers
Multistage Amplifiers Single-stage transistor amplifiers are inadequate for meeting most design requirements for any of the four amplifier types (voltage, current, transconductance, and transresistance.)
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I (Regulations 2013 UNIT-1 Part A 1. What is a Q-point? [N/D 16] The operating point also known as quiescent
INSTITUTE OF AERONAUTICAL ENGINEERING (AUTONOMUS) Dundigal, Hyderabad
INSTITUTE OF AERONAUTICAL ENGINEERING (AUTONOMUS) Dundigal, Hyderabad - 00 0 ELECTRONICS AND COMMUNICATION ENGINEERING ASSIGNMENT Name : ELECTRONIC CIRCUIT ANALYSIS Code : A0 Class : II - B. Tech nd semester
Reading. Lecture 33: Context. Lecture Outline. Chapter 9, multi-stage amplifiers. Prof. J. S. Smith
eading Lecture 33: Chapter 9, multi-stage amplifiers Prof J. S. Smith Context Lecture Outline We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources
Code: 9A Answer any FIVE questions All questions carry equal marks *****
II B. Tech II Semester (R09) Regular & Supplementary Examinations, April/May 2012 ELECTRONIC CIRCUIT ANALYSIS (Common to EIE, E. Con. E & ECE) Time: 3 hours Max Marks: 70 Answer any FIVE questions All
UNIT I - TRANSISTOR BIAS STABILITY
UNIT I - TRANSISTOR BIAS STABILITY OBJECTIVE On the completion of this unit the student will understand NEED OF BIASING CONCEPTS OF LOAD LINE Q-POINT AND ITS STABILIZATION AND COMPENSATION DIFFERENT TYPES
The Miller Approximation. CE Frequency Response. The exact analysis is worked out on pp of H&S.
CE Frequency Response The exact analysis is worked out on pp. 639-64 of H&S. The Miller Approximation Therefore, we consider the effect of C µ on the input node only V ---------- out V s = r g π m ------------------
VALLIAMMAI ENGINEERING COLLEGE
VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR 60320 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING QUESTION BANK Academic Year: 2018 2019 Odd Semester Subject: EC8353 - ELECTRON DEVICES
Lecture 33: Context. Prof. J. S. Smith
Lecture 33: Prof J. S. Smith Context We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources and cascode connected devices, and we will also look at
UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
Lab 2: Discrete BJT Op-Amps (Part I)
Lab 2: Discrete BJT Op-Amps (Part I) This is a three-week laboratory. You are required to write only one lab report for all parts of this experiment. 1.0. INTRODUCTION In this lab, we will introduce and
ESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier
High Frequency BJT Model & Cascode BJT Amplifier 1 Gain of 10 Amplifier Non-ideal Transistor C in R 1 V CC R 2 v s Gain starts dropping at > 1MHz. Why! Because of internal transistor capacitances that
UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS
UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS CE, CB and CC amplifiers. Method of drawing small-signal equivalent circuit. Midband analysis of various types of single stage amplifiers to obtain gain,
Page 1. Telecommunication Electronics ETLCE - A2 06/09/ DDC 1. Politecnico di Torino ICT School. Amplifiers
Politecnico di Torino ICT School Amplifiers Telecommunication Electronics A2 Transistor amplifiers» Bias point and circuits,» Small signal models» Gain and bandwidth» Limits of linear analysis Op Amp amplifiers
Gechstudentszone.wordpress.com
UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits
EC2205 Electronic Circuits-1 UNIT III FREQUENCY RESPONSE OF AMPLIFIERS
EC2205 Electronic Circuits-1 UNIT III FREQUENCY RESPONSE OF AMPLIFIERS PART A (2 MARK QUESTIONS) 1. Two amplifiers having gain 20 db and 40 db are cascaded. Find the overall gain in db. (NOV/DEC 2009)
Solid State Devices & Circuits. 18. Advanced Techniques
ECE 442 Solid State Devices & Circuits 18. Advanced Techniques Jose E. Schutt-Aine Electrical l&c Computer Engineering i University of Illinois jschutt@emlab.uiuc.edu 1 Darlington Configuration - Popular
R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)
SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave
Electron Devices and Circuits
Electron Devices and Circuits (EC 8353) Prepared by Mr.R.Suresh, AP/EEE Ms.S.KARKUZHALI,A.P/EEE BJT small signal model Analysis of CE, CB, CC amplifiers- Gain and frequency response MOSFET small signal
Homework Assignment 12
Homework Assignment 12 Question 1 Shown the is Bode plot of the magnitude of the gain transfer function of a constant GBP amplifier. By how much will the amplifier delay a sine wave with the following
ATLCE - A3 01/03/2016. Analog and Telecommunication Electronics 2016 DDC 1. Politecnico di Torino - ICT School. Lesson A3: BJT Amplifiers
Politecnico di Torino - ICT School Analog and Telecommunication Electronics A3 BJT Amplifiers»Biasing» Output dynamic range» Small signal analysis» ltage gain» Frequency response AY 2015-16 Biasing Output
UNIT I PN JUNCTION DEVICES
UNIT I PN JUNCTION DEVICES 1. Define Semiconductor. 2. Classify Semiconductors. 3. Define Hole Current. 4. Define Knee voltage of a Diode. 5. What is Peak Inverse Voltage? 6. Define Depletion Region in
DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS
DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS UNIT-I - PN DIODEAND ITSAPPLICATIONS 1. What is depletion region in PN junction?
Linear electronic. Lecture No. 1
1 Lecture No. 1 2 3 4 5 Lecture No. 2 6 7 8 9 10 11 Lecture No. 3 12 13 14 Lecture No. 4 Example: find Frequency response analysis for the circuit shown in figure below. Where R S =4kR B1 =8kR B2 =4k R
Analog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics A3 BJT Amplifiers»Biasing» Output dynamic range» Small signal analysis» Voltage gain» Frequency response 12/03/2012-1 ATLCE -
Improving Amplifier Voltage Gain
15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance
Code No: R Set No. 1
Code No: R059210404 Set No. 1 II B.Tech I Semester Supplimentary Examinations, February 2008 ELECTRONIC CIRCUIT ANALYSIS ( Common to Electronics & Communication Engineering and Electronics & Telematics)
VALLIAMMAI ENGINEERING COLLEGE
VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203 DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING QUESTION BANK III SEMESTER EC6202 - Electronic Devices and Circuits Regulation 2013
Code No: R Set No. 1
Code No: R05010204 Set No. 1 I B.Tech Supplimentary Examinations, Aug/Sep 2007 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering,
Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10
Index A absolute value, 308 additional pole, 271 analog multiplier, 190 B BiCMOS,107 Bode plot, 266 base-emitter voltage, 16, 50 base-emitter voltages, 296 bias current, 111, 124, 133, 137, 166, 185 bipolar
VALLIAMMAI ENGINEERING COLLEGE
VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203 DEPARTMENT OF ELECTRONICS AND INSTRUMENTATION ENGINEERING QUESTION BANK III SEMESTER EC6202 ELECTRONIC DEVICES AND CIRCUITS Regulation 2013
VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR- 603 203 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT I PN JUNCTION DEVICES 1. Define Semiconductor.
UNIVERSITY PART-A ANSWERS Unit-1 1. What is an amplifier? An amplifier is a device which produces a large electrical output of similar characteristics to that of the input parameters. 2. What are transistors?
ELC224 Final Review (12/10/2009) Name:
ELC224 Final Review (12/10/2009) Name: Select the correct answer to the problems 1 through 20. 1. A common-emitter amplifier that uses direct coupling is an example of a dc amplifier. 2. The frequency
EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS. 1. Define diffusion current.
EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS 1. Define diffusion current. A movement of charge carriers due to the concentration gradient in a semiconductor is called process
GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013
Seat No.: Enrolment No. GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013 Subject Code: 131101 Date: 31-05-2013 Subject Name: Basic Electronics Time: 02.30 pm - 05.00 pm Total
Paper-1 (Circuit Analysis) UNIT-I
Paper-1 (Circuit Analysis) UNIT-I AC Fundamentals & Kirchhoff s Current and Voltage Laws 1. Explain how a sinusoidal signal can be generated and give the significance of each term in the equation? 2. Define
Transistor Biasing and Operational amplifier fundamentals. OP-amp Fundamentals and its DC characteristics. BJT biasing schemes
Lab 1 Transistor Biasing and Operational amplifier fundamentals Experiment 1.1 Experiment 1.2 BJT biasing OP-amp Fundamentals and its DC characteristics BJT biasing schemes 1.1 Objective 1. To sketch potential
Building Blocks of Integrated-Circuit Amplifiers
Building Blocks of ntegrated-circuit Amplifiers 1 The Basic Gain Cell CS and CE Amplifiers with Current Source Loads Current-source- or active-loaded CS amplifier Rin A o R A o g r r o g r 0 m o m o Current-source-
Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers
Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.
VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur
VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203. DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING QUESTION BANK SUBJECT : EC 6202 Electronic Devices and Circuits SEM / YEAR: III /
Chapter 15 Goals. ac-coupled Amplifiers Example of a Three-Stage Amplifier
Chapter 15 Goals ac-coupled multistage amplifiers including voltage gain, input and output resistances, and small-signal limitations. dc-coupled multistage amplifiers. Darlington configuration and cascode
EXPT NO: 1.A. COMMON EMITTER AMPLIFIER (Software) PRELAB:
EXPT NO: 1.A COMMON EMITTER AMPLIFIER (Software) PRELAB: 1. Study the operation and working principle of CE amplifier. 2. Identify all the formulae you will need in this Lab. 3. Study the procedure of
Unit III FET and its Applications. 2 Marks Questions and Answers
Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric
Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each)
Q. No. WINTER 16 EXAMINATION (Subject Code: 17319) Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer
In a cascade configuration, the overall voltage and current gains are given by:
ECE 3274 Two-Stage Amplifier Project 1. Objective The objective of this lab is to design and build a direct coupled two-stage amplifier, including a common-source gain stage and a common-collector buffer
Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.
Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect
Lecture 21: Voltage/Current Buffer Freq Response
Lecture 21: Voltage/Current Buffer Freq Response Prof. Niknejad Lecture Outline Last Time: Frequency Response of Voltage Buffer Frequency Response of Current Buffer Current Mirrors Biasing Schemes Detailed
BJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
Linear IC s and applications
Questions and Solutions PART-A Unit-1 INTRODUCTION TO OP-AMPS 1. Explain data acquisition system Jan13 DATA ACQUISITION SYSYTEM BLOCK DIAGRAM: Input stage Intermediate stage Level shifting stage Output
5.25Chapter V Problem Set
5.25Chapter V Problem Set P5.1 Analyze the circuits in Fig. P5.1 and determine the base, collector, and emitter currents of the BJTs as well as the voltages at the base, collector, and emitter terminals.
R.B.V.R.R. WOMEN S COLLEGE (AUTONOMOUS) Narayanaguda, Hyderabad. ELECTRONIC PRINCIPLES AND APPLICATIONS
R.B.V.R.R. WOMEN S COLLEGE (AUTONOMOUS) Narayanaguda, Hyderabad. DEPARTMENT OF PHYSICS QUESTION BANK FOR SEMESTER V PHYSICS PAPER VI (A) ELECTRONIC PRINCIPLES AND APPLICATIONS UNIT I: SEMICONDUCTOR DEVICES
Electronics Lab. (EE21338)
Princess Sumaya University for Technology The King Abdullah II School for Engineering Electrical Engineering Department Electronics Lab. (EE21338) Prepared By: Eng. Eyad Al-Kouz October, 2012 Table of
IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)
ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) LONG QUESTIONS (10 MARKS) 1. Draw the construction diagram and explain the working of P-Channel JFET. Also draw the characteristics curve and transfer
SAMPLE FINAL EXAMINATION FALL TERM
ENGINEERING SCIENCES 154 ELECTRONIC DEVICES AND CIRCUITS SAMPLE FINAL EXAMINATION FALL TERM 2001-2002 NAME Some Possible Solutions a. Please answer all of the questions in the spaces provided. If you need
Code No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions
AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014
Q.2 a. State and explain the Reciprocity Theorem and Thevenins Theorem. a. Reciprocity Theorem: If we consider two loops A and B of network N and if an ideal voltage source E in loop A produces current
EE LINEAR INTEGRATED CIRCUITS & APPLICATIONS
UNITII CHARACTERISTICS OF OPAMP 1. What is an opamp? List its functions. The opamp is a multi terminal device, which internally is quite complex. It is a direct coupled high gain amplifier consisting of
Document Name: Electronic Circuits Lab. Facebook: Twitter:
Document Name: Electronic Circuits Lab www.vidyathiplus.in Facebook: www.facebook.com/vidyarthiplus Twitter: www.twitter.com/vidyarthiplus Copyright 2011-2015 Vidyarthiplus.in (VP Group) Page 1 CIRCUIT
Phy 335, Unit 4 Transistors and transistor circuits (part one)
Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road QUESTION BANK (DESCRIPTIVE) PART - A
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: Basic Electrical and Electronics Engineering (16EE207) Year & Sem: II-B.
EE105 Fall 2015 Microelectronic Devices and Circuits
EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of
ST.ANNE S COLLEGE OF ENGINEERING AND TECHNOLOGY ANGUCHETTYPALAYAM, PANRUTI Department of Electronics & Communication Engineering OBSERVATION
ST.ANNE S COLLEGE OF ENGINEERING AND TECHNOLOGY ANGUCHETTYPALAYAM, PANRUTI 67 Department of Electronics & Communication Engineering OBSERVATION EC836 ANALOG AND DIGITAL CIRCUITS LABORATORY STUDENT NAME
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB Experiment # 6 (Part I) Bipolar Junction Transistors Common Emitter
Chapter 11. Differential Amplifier Circuits
Chapter 11 Differential Amplifier Circuits 11.0 ntroduction Differential amplifier or diff-amp is a multi-transistor amplifier. t is the fundamental building block of analog circuit. t is virtually formed
Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi
Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No # 05 FETS and MOSFETS Lecture No # 06 FET/MOSFET Amplifiers and their Analysis In the previous lecture
Microelectronic Circuits
SECOND EDITION ISHBWHBI \ ' -' Microelectronic Circuits Adel S. Sedra University of Toronto Kenneth С Smith University of Toronto HOLT, RINEHART AND WINSTON HOLT, RINEHART AND WINSTON, INC. New York Chicago
UNIVERSITY PART-B ANSWERS UNIT-1
UNERSTY PART-B ANSWERS UNT-. Discuss about the DC load line and Q point. (OR) What is D.C. load line, how will you select the operating point, explain it using common emitter amplifier characteristics
55:041 Electronic Circuits
55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width = 1 10-6 m or less Thickness = 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor
Dhanalakshmi College of Engineering Manimangalam, Tambaram, Chennai
Dhanalakshmi College of Engineering Manimangalam, Tambaram, Chennai 601 301 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER - R 2013 EC6311 ANALOG AND DIGITAL LABORATORY LABORATORY
G.PULLAIAH COLLEGE OF ENGINEERING & TECHNOLOGY II B.Tech II-SEM MID -I EXAM Branch: EEE Sub: Analog Electronic Circuits Date:
G.PULLAIAH COLLEGE OF ENGINEERING & TECHNOLOGY II B.Tech II-SEM MID -I EXAM Branch: EEE Sub: Analog Electronic Circuits Date: 08-03-18 Time: 20 minutes Max.Marks:10 1. The amplifier that gives unity current
UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering
UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 7 BJT AMPLIFIER CONFIGURATIONS AND INPUT/OUTPUT IMPEDANCE OBJECTIVES The purpose of this experiment
DESIGN & TESTING OF A RC COUPLED SINGLE STAGE BJT AMPLIFIER
DESIGN & TESTING OF A RC COUPLED SINGLE STAGE BJT AMPLIFIER Aim: Wiring of a RC coupled single stage BJT amplifier and determination of the gainfrequency response, input and output impedances. Apparatus
Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product
Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product Physics116A,12/4/06 Draft Rev. 1, 12/12/06 D. Pellett 2 Negative Feedback and Voltage Amplifier AB
SMALL SINGLE LOW FREQUENCY TRANSISTOR AMPLIFIERS
UNIT VI SMALL SINGLE LOW FREQUENCY TRANSISTOR 6.1 Introduction AMPLIFIERS V-I characteristics of an active device such as BJT are non-linear. The analysis of a non- linear device is complex. Thus to simplify
STATIC CHARACTERISTICS OF TRANSISTOR
STAT CHARACTERISTS OF TRANSISTOR OBJECTIVE The purpose of the experiment is to study the characteristics of bipolar transistor in common emitter (CE) configuration. From the characteristic curve it is
Part ILectures Bipolar Junction Transistors(BJTs) and Circuits
University of missan Electronic II, Second year 2015-2016 Part ILectures Bipolar Junction Transistors(BJTs) and Circuits Assistant Lecture: 1 Bipolar Junction Transistors (BJTs) Bipolar Junction Transistors
CS and CE amplifiers with loads:
CS and CE amplifiers with loads: The Common-Source Circuit The most basic IC MOS amplifier is shown in fig.(1). The source of MOS transistor is grounded, also the drain resistor RD replaced by a constant-current
CIRCUIT DIAGRAM Half Wave Rectifier. Half Wave Rectifier with filter 2012/ODD/III/ECE/EC I/LM 1
CIRCUIT DIAGRAM Half Wave Rectifier Half Wave Rectifier with filter 2012/ODD/III/ECE/EC I/LM 1 Ex.No. 1 Date: / /2012 Power supply circuit using Half Wave rectifiers AIM To Build and understand the operation
Chapter Three " BJT Small-Signal Analysis "
Chapter Three " BJT Small-Signal Analysis " We now begin to examine the small-signal ac response of the BJT amplifier by reviewing the models most frequently used to represent the transistor in the sinusoidal
The Common Source JFET Amplifier
The Common Source JFET Amplifier Small signal amplifiers can also be made using Field Effect Transistors or FET's for short. These devices have the advantage over bipolar transistors of having an extremely
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.
PartIIILectures. Multistage Amplifiers
University of missan Electronic II, Second year 2015-2016 PartIIILectures Assistant Lecture: 1 Multistage and Compound Amplifiers Basic Definitions: 1- Gain of Multistage Amplifier: Fig.(1-1) A general
Early Effect & BJT Biasing
Early Effect & BJT Biasing Early Effect DC BJT Behavior DC Biasing the BJT 1 ESE319 Introduction to Microelectronics Early Effect Saturation region Forward-Active region 4 3 Ideal NPN BJT Transfer V Characteristic
Module-1 BJT AC Analysis: The re Transistor Model. Common-Base Configuration
Module-1 BJT AC Analysis: BJT AC Analysis: BJT AC Analysis: BJT Transistor Modeling, The re transistor model, Common emitter fixed bias, Voltage divider bias, Emitter follower configuration. Darlington