Electronic Circuits EE359A
|
|
|
- Oscar Chapman
- 5 years ago
- Views:
Transcription
1 Electronic Circuits EE359A Bruce McNair B Lecture
2 Class C operation 4 2 h( t) t 0 ( ) 20 log A j Cconduction_angle j π 3 489
3 Class C operation 4 2 h( t) t 0 ( ) 20 log A j Cconduction_angle j π 8 490
4 Power BJTs Collector currents in the multi-ampere range Multi-watt power dissipation Achieved by: High temperature tolerant designs (T J up to 200 o C) Effective heat dissipation design 491
5 Thermal resistance model Power dissipation Thermal resistance TJ TA =θjapd 492
6 Power derating curve Power dissipation at ambient Reduced power rating at increased temperature Maximum allowable junction temperature 493
7 Achieving efficient heat dissipation TO3 package Maximum heat dissipation surface Mounting holes to allow bolting to heat sink 494
8 Modeling heat transfer Junction temperature Heat dissipation Case temperature Heat-sink temperature Ambient temperature 495
9 Modeling heat transfer Junction-case thermal R Heat dissipation Case-heatsink thermal R Heatsink-ambient thermal R 496
10 Modeling heat transfer Heat dissipation Junction-case thermal R Function of transistor/ case design Case-heatsink thermal R Function of bonding transistor to heatsink Heatsink-ambient thermal R Function of heatsink cooling, e.g., conduction, convection, radiation, etc. 497
11 Multistage amplifiers - rationale High input Z for minimal loading High power output (differential input for noise immunity) High gain (in multiple stages) Low output Z for minimal impact from load 498
12 Increasing output power Higher operating voltage High power output stage or Higher collector current 499
13 Increasing output power High power output stage Higher operating voltage or Higher collector current Limitation of V CC Breakdown voltage Output impedance may be small 500
14 Increasing output power High power output stage Higher operating voltage or Higher collector current Limitation of V CC Breakdown voltage Output impedance may be small Darlington configuration for increased β 501
15 NPN Darlington Pair 502
16 PNP Darlington Pair 503
17 PNP Darlington Pair NPN used because of limited PNP performance 504
18 AB Output Stage with Darlington Pair 505
19 AB Output Stage with Darlington Pair NPN Darlington push stage V BE multiplier PNP Darlington pull stage 506
20 What if the v O is shorted? 507
21 What if the v O is shorted? 508
22 AB amplifier with short circuit protection 509
23 Thermal overload protection 510
24 Thermal overload protection Output transistor Normally biased off 511
25 Thermal overload protection Thermal coupling 512
26 Thermal overload protection Operation shifts with changing temperature 513
27 Thermal overload protection Turns on, stealing Q 1 bias current, shutting off Q 1 514
28 Normal MOSFET 515
29 Normal MOSFET Thermal conduction path 516
30 Power MOSFET 517
31 Power MOSFET Thermal conduction path 518
32 AB amplifier with power MOSFETs and BJT drivers 519
33 AB amplifier with power MOSFETs and BJT drivers V BE multiplier 520
34 AB amplifier with power MOSFETs and BJT drivers Push-pull darlington pairs 521
35 AB amplifier with power MOSFETs and BJT drivers CMOS power MOSFET output 522
36 AB amplifier with power MOSFETs and BJT drivers Quiescent point adjustment Temperature compensation adjustment Thermal feedback control 523
37 AB amplifier with power MOSFETs and BJT drivers Parasitic oscillation suppression 524
38 AB amplifier with power MOSFETs and BJT drivers 525
39 Filters and Tuned Amplifiers Ch
40 Two-port model of filter General response: Vo () s Ts () = V() s i 527
41 Two-port model of filter General response: Vo () s Ts () = V() s j ( ) T( jω) = T( jω) e φω i Substituting s = jω and using polar representation: 528
42 Two-port model of filter General response: Vo () s Ts () = V() s j ( ) T( jω) = T( jω) e φω i Substituting s = jω and using polar representation: ( T jω ) G( ω) = 20log ( ) Gain/Attenuation in db: ( T jω ) A( ω) = 20log ( ) 529
43 Ideal filter characteristics (Low-pass) 530
44 Ideal filter characteristics (High-pass) 531
45 Ideal filter characteristics (Band-pass) 532
46 Ideal filter characteristics (Band-stop) 533
47 Practical limitations (Low-pass) 534
48 Practical limitations (Low-pass) Zero-width transition band Infinite attenuation in stop-band 535
49 Practical limitations (Low-pass) Zero-width transition band Infinite attenuation in stop-band Infinite complexity Infinite time delay 536
50 Practical limitations (Low-pass) impulse response input x(t) = δ (t) t output y(t) = sinc(t) = sin(t) t t 537
51 Practical limitations (Low-pass) impulse response input x(t) = δ (t) t output Response precedes input!! y(t) = sinc(t) = sin(t) t t 538
52 Example Low-pass specification Pass-band edge Stop-band edge Pass-band variation Minimum stop-band attenuation - 539
53 Example Band-pass specification Pass-band variation Lower stop-band edge Pass-band edges Upper stop-band edge Minimum stop-band attenuation 540
54 Typical Low-pass specification Often no constraints on filter curve - 541
55 Typical Low-pass specification Often no constraints on filter curve Might be monotonic - 542
56 Typical Low-pass specification Often no constraints on filter curve May have passband ripple - 543
57 Typical Low-pass specification Often no constraints on filter curve May have stop band ripple - 544
58 Typical Low-pass specification Often no constraints on filter curve May have both passband and stopband ripple - 545
59 Typical Low-pass specification Many different approximations to the ideal filter response - 546
Electronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 20 496 Power BJTs Collector currents in the multi-ampere range Multi-watt power dissipation Achieved by: High temperature
Electronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 18 436 Bistable circuit If v + > 0, v 0 = V max à v + > 0 If v + < 0, v 0 = -V max à v+ < 0 437 Bistable circuit physical
Chapter 11 Output Stages
1 Chapter 11 Output Stages Learning Objectives 2 1) The classification of amplifier output stages 2) Analysis and design of a variety of output-stage types 3) Overview of power amplifiers Introduction
Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs
Integrated Circuit Amplifiers Comparison of MOSFETs and BJTs 17 Typical CMOS Device Parameters 0.8 µm 0.25 µm 0.13 µm Parameter NMOS PMOS NMOS PMOS NMOS PMOS t ox (nm) 15 15 6 6 2.7 2.7 C ox (ff/µm 2 )
Concepts to be Covered
Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors
ECE:3410 Electronic Circuits
ECE:3410 Electronic Circuits Output Stages and Power Amplifiers Sections of Chapter 8 A. Kruger Power + Output Stages1 Power Amplifiers, Power FETS & BJTs Audio (stereo) MP3 Players Motor controllers Servo
55:041 Electronic Circuits
55:041 Electronic Circuits Output Stages and Power Amplifiers Sections of Chapter 8 A. Kruger Power + Output Stages1 Power Amplifiers, Power FETS & BJTs Audio (stereo) MP3 Players Motor controllers Servo
Power Amplifiers. Class B Class AB
ower Amplifiers Class B Class AB Class B he circuit each transistor conducts for a half of every signal period complementary pair push-pull arrangement peration vi ( 0.6; 0.6) (off), (off) v 0 vi v 0.6
Electronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 16 404 Signal Generators and Waveform-shaping Circuits Ch 17 405 Input summing, output sampling voltage amplifier Series
Electronic Circuits. Power Amplifiers. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Power Amplifiers Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of the Precedent Lecture Explain the Amplifier Operation Explain the BJT AC Models
(a) BJT-OPERATING MODES & CONFIGURATIONS
(a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base
The Miller Approximation. CE Frequency Response. The exact analysis is worked out on pp of H&S.
CE Frequency Response The exact analysis is worked out on pp. 639-64 of H&S. The Miller Approximation Therefore, we consider the effect of C µ on the input node only V ---------- out V s = r g π m ------------------
So far we have dealt with only small-signal ampliers. In small-signal ampliers the main factors were amplication linearity gain
Contents Power Amplier Types Class A Operation Class B Operation Class AB Operation Class C Operation Class D Operation Amplier Eciency Series-Fed Class A Amplier AC-DC Load Lines Maximum Eciency Figure
Chapter 13 Output Stages and Power Amplifiers
Chapter 13 Output Stages and Power Amplifiers 13.1 General Considerations 13.2 Emitter Follower as Power Amplifier 13.3 Push-Pull Stage 13.4 Improved Push-Pull Stage 13.5 Large-Signal Considerations 13.6
10. Output Stages and Power Supplies. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1
10. Output Stages and Power Supplies 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1 10.1 Thermal Considerations Considerable power is dissipated as heat in power devices.
BJT Circuits (MCQs of Moderate Complexity)
BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r
Lecture 33: Context. Prof. J. S. Smith
Lecture 33: Prof J. S. Smith Context We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources and cascode connected devices, and we will also look at
Homework Assignment 12
Homework Assignment 12 Question 1 Shown the is Bode plot of the magnitude of the gain transfer function of a constant GBP amplifier. By how much will the amplifier delay a sine wave with the following
55:041 Electronic Circuits
55:041 Electronic Circuits Output Stages and Power Amplifiers Sections of Chapter 8 A. Kruger Power + Output Stages1 Power Amplifiers, Power FETS & BJTs Audio (stereo) MP3 Players Motor controllers Servo
Analog Circuits Part 2 Semiconductors
Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors
Linear electronic. Lecture No. 1
1 Lecture No. 1 2 3 4 5 Lecture No. 2 6 7 8 9 10 11 Lecture No. 3 12 13 14 Lecture No. 4 Example: find Frequency response analysis for the circuit shown in figure below. Where R S =4kR B1 =8kR B2 =4k R
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK Subject with Code : Electronic Circuit Analysis (16EC407) Year & Sem: II-B.Tech & II-Sem
Electronics EECE2412 Spring 2017 Exam #2
Electronics EECE2412 Spring 2017 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 30 March 2017 File:12198/exams/exam2 Name: : General Rules:
Code No: R Set No. 1
Code No: R059210404 Set No. 1 II B.Tech I Semester Supplimentary Examinations, February 2008 ELECTRONIC CIRCUIT ANALYSIS ( Common to Electronics & Communication Engineering and Electronics & Telematics)
Reading. Lecture 33: Context. Lecture Outline. Chapter 9, multi-stage amplifiers. Prof. J. S. Smith
eading Lecture 33: Chapter 9, multi-stage amplifiers Prof J. S. Smith Context Lecture Outline We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources
TDA W Hi-Fi AUDIO AMPLIFIER
TDA2030 14W Hi-Fi AUDIO AMPLIFIER DESCRIPTION The TDA2030 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class AB amplifier. Typically it provides 14W output
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.
Microelectronics Circuit Analysis and Design. Interdigitated BJT: Top and Cross-Sectional Views. Power Amps 10/11/2013. In this chapter, we will:
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 8 Output Stages and Power Amplifiers In this chapter, we will: Describe the characteristics of BJT and MOSFET power transistors Define
SAMPLE FINAL EXAMINATION FALL TERM
ENGINEERING SCIENCES 154 ELECTRONIC DEVICES AND CIRCUITS SAMPLE FINAL EXAMINATION FALL TERM 2001-2002 NAME Some Possible Solutions a. Please answer all of the questions in the spaces provided. If you need
OUTPUT UP TO 300mA C2 TOP VIEW FAULT- DETECT OUTPUT. Maxim Integrated Products 1
19-1422; Rev 2; 1/1 Low-Dropout, 3mA General Description The MAX886 low-noise, low-dropout linear regulator operates from a 2.5 to 6.5 input and is guaranteed to deliver 3mA. Typical output noise for this
Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering
MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter
Lecture (10) Power Amplifiers (2)
Lecture (10) Power Amplifiers (2) By: Dr. Ahmed ElShafee ١ Class B/AB Power the ideal maximum peak output current for both dual supply and single supply push pull amplifiers is approximately Ic(sat), and
Fast IC Power Transistor with Thermal Protection
Fast IC Power Transistor with Thermal Protection Introduction Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area,
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,
Electronics Fundamentals BIPOLAR TRANSISTORS. Construction, circuit symbols and biasing examples for NPN and PNP junction transistors.
IPOLA TANSISTOS onstruction, circuit symbols and biasing examples for NPN and PNP junction transistors Slide 1 xternal bias voltages create an electric field, which pulls electrons (emitted into the base
PHYS225 Lecture 6. Electronic Circuits
PHYS225 Lecture 6 Electronic Circuits Transistors History Basic physics of operation Ebers-Moll model Small signal equivalent Last lecture Introduction to Transistors A transistor is a device with three
Document Name: Electronic Circuits Lab. Facebook: Twitter:
Document Name: Electronic Circuits Lab www.vidyathiplus.in Facebook: www.facebook.com/vidyarthiplus Twitter: www.twitter.com/vidyarthiplus Copyright 2011-2015 Vidyarthiplus.in (VP Group) Page 1 CIRCUIT
INDIANA UNIVERSITY, DEPT. OF PHYSICS, P400/540 LABORATORY FALL Laboratory #5: More Transistor Amplifier Circuits
INDIANA UNIVERSITY, DEPT. OF PHYSICS, P400/540 LABORATORY FALL 2008 Laboratory #5: More Transistor Amplifier Circuits Goal: Use and measure the behavior of transistor circuits used to implement different
AN W 2 (18 V, 8 Ω) Power Amplifier with Variable Audio Output and Volume Control. ICs for Audio Common Use. Overview. Features.
ICs for Audio Common Use. W 2 (8 V, 8 Ω) Power Amplifier with Variable Audio Output and Volume Control Overview The is a monolithic integrated circuit designed for. W (8 V, 8 Ω) output audio power amplifier.
Electronic Devices. Floyd. Chapter 7. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd
Electronic Devices Ninth Edition Floyd Chapter 7 Power Amplifiers A power amplifier is a large signal amplifier that produces a replica of the input signal on its output. In the case shown here, the output
MAX8863T/S/R, MAX8864T/S/R. Low-Dropout, 120mA Linear Regulators. General Description. Benefits and Features. Ordering Information.
General Description The MAX8863T/S/R and low-dropout linear regulators operate from a +2.5V to +6.5V input range and deliver up to 12mA. A PMOS pass transistor allows the low, 8μA supply current to remain
Electronic Troubleshooting
Electronic Troubleshooting Chapter 3 Bipolar Transistors Most devices still require some individual (discrete) transistors Used to customize operations Interface to external devices Understanding their
AN W 2 (18 V, 8 Ω) Power Amplifier with Mute Function and Volume Control. ICs for Audio Common Use. Overview. Features.
4.0 W 2 (8 V, 8 Ω) Power Amplifier with Mute Function and Volume Control Overview The is a monolithic integrated circuit designed for 4.0 W (8 V, 8 Ω) output audio power amplifier. It is a dual channel
10. SINGLE-SUPPLY PUSH-PULL AMPLIFIER
0. SNGE-SUY USH-U AMFE The push-pull amplifier circuit as discussed in section-9 requires a dual power supply. t can be tailored to operate on a single supply as illustrated in Figure 0.. n this case the
PowerAmp Design. PowerAmp Design PAD20 COMPACT HIGH VOLTAGE OP AMP
PowerAmp Design Rev C KEY FEATURES LOW COST HIGH VOLTAGE 150 VOLTS HIGH OUTPUT CURRENT 5A 40 WATT DISSIPATION CAPABILITY 80 WATT OUTPUT CAPABILITY INTEGRATED HEAT SINK AND FAN SMALL SIZE 40mm SQUARE RoHS
AN W 2 (18 V, 8 Ω) Power Amplifier with Mute Function and Volume Control. ICs for Audio Common Use. Overview. Features.
. W 2 (8 V, 8 Ω) Power Amplifier with Mute Function and Volume Control Overview The is a monolithic integrated circuit designed for. W (8 V, 8 Ω) output audio power amplifier. It is a dual channel SEPP
Application Notes High Performance Audio Amplifiers
High Performance Audio Amplifiers Exicon Lateral MOSFETs These audio devices are capable of very high standards of amplification, with low distortion and very fast slew rates. They are free from secondary
UNIT I PN JUNCTION DEVICES
UNIT I PN JUNCTION DEVICES 1. Define Semiconductor. 2. Classify Semiconductors. 3. Define Hole Current. 4. Define Knee voltage of a Diode. 5. What is Peak Inverse Voltage? 6. Define Depletion Region in
CMOS Cascode Transconductance Amplifier
CMOS Cascode Transconductance Amplifier Basic topology. 5 V I SUP v s V G2 M 2 iout C L v OUT Device Data V Tn = 1 V V Tp = 1 V µ n C ox = 50 µa/v 2 µ p C ox = 25 µa/v 2 λ n = 0.05 V 1 λ p = 0.02 V 1 @
Analog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics F2 Active power devices»mos»bjt» IGBT, TRIAC» Safe Operating Area» Thermal analysis 30/05/2012-1 ATLCE - F2-2011 DDC Lesson F2:
PowerAmp Design. PowerAmp Design PAD117A RAIL TO RAIL OPERATIONAL AMPLIFIER
PowerAmp Design RAIL TO RAIL OPERATIONAL AMPLIFIER Rev J KEY FEATURES LOW COST RAIL TO RAIL INPUT & OUTPUT SINGLE SUPPLY OPERATION HIGH VOLTAGE 100 VOLTS HIGH OUTPUT CURRENT 15A 250 WATT OUTPUT CAPABILITY
Electronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 12 1 MOSFET vs. BJT current-voltage characteristic 1.5 10 3 i C ( v) i D ( v) 1 10 3 500 0 2 4 6 8 10 v The drain current
Code No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions
EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT
EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current
Current Supply Topology. CMOS Cascode Transconductance Amplifier. Basic topology. p-channel cascode current supply is an obvious solution
CMOS Cascode Transconductance Amplifier Basic topology. Current Supply Topology p-channel cascode current supply is an obvious solution Current supply must have a very high source resistance r oc since
Electronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 4 0 Bipolar Junction Transistors (BJT) Small Signal Analysis Graphical Analysis / Biasing Amplifier, Switch and Logic
Homework Assignment 11
Homework Assignment 11 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
Transistors and Applications
Chapter 17 Transistors and Applications DC Operation of Bipolar Junction Transistors (BJTs) The bipolar junction transistor (BJT) is constructed with three doped semiconductor regions separated by two
Chapter 6. BJT Amplifiers
Basic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H Chapter 6 BJT Amplifiers 1 Introduction The things you learned about biasing a transistor
Glossary + - A BNC plug that shorts the inner wire in a coax cable to the outer shield through a
50Ω Terminator AC Active Alligator Clip Back Bias Base Battery Bias + - Bipolar Transistor BJT Black Box BNC BNC Cable A BNC plug that shorts the inner wire in a coax cable to the outer shield through
Chapter Three " BJT Small-Signal Analysis "
Chapter Three " BJT Small-Signal Analysis " We now begin to examine the small-signal ac response of the BJT amplifier by reviewing the models most frequently used to represent the transistor in the sinusoidal
F9 Differential and Multistage Amplifiers
Lars Ohlsson 018-10-0 F9 Differential and Multistage Amplifiers Outline MOS differential pair Common mode signal operation Differential mode signal operation Large signal operation Small signal operation
Output Stage and Power Amplifiers
Microelectronic Circuits Output Stage and ower Amplifiers Slide 1 ntroduction Most of the challenging requirement in the design of the output stage is ower delivery to the load. ower consumption at the
PowerAmp Design. PowerAmp Design PAD112 HIGH VOLTAGE OPERATIONAL AMPLIFIER
PowerAmp Design Rev C KEY FEATURES LOW COST HIGH VOLTAGE 150 VOLTS HIGH OUTPUT CURRENT 5 AMPS 50 WATT DISSIPATION CAPABILITY 100 WATT OUTPUT CAPABILITY INTEGRATED HEAT SINK AND FAN COMPATIBLE WITH PAD123
GLOSSARY. A connector used to T together two BNC coax cables and a BNC jack. The transfer function vs. frequency plotted on Log Log axis.
GLOSSARY 50ΩTerminator AC Active Alligator Clip Back Bias Base Battery Bias + - Bipolar Transistor BJT Black Box BNC BNC Cable A BNC plug that shorts the inner wire in a coax cable to the outer shield
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,
ECE321 Electronics I Fall 2006
ECE321 Electronics I Fall 2006 Professor James E. Morris Lecture 11 31 st October, 2006 Bipolar Junction Transistors (BJTs) 5.1 Device Structure & Physics 5.2 I-V Characteristics Convert 5.1 information
EE 332 Design Project
EE 332 Design Project Variable Gain Audio Amplifier TA: Pohan Yang Students in the team: George Jenkins Mohamed Logman Dale Jackson Ben Alsin Instructor s Comments: Lab Grade: Introduction The goal of
BJT Amplifier Power Amp Overview(H.21)
BJT Amplifier Power Amp Overview(H.21) 20170616-2 Copyright (c) 2016-2017 Young W. Lim. Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation
Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10
Index A absolute value, 308 additional pole, 271 analog multiplier, 190 B BiCMOS,107 Bode plot, 266 base-emitter voltage, 16, 50 base-emitter voltages, 296 bias current, 111, 124, 133, 137, 166, 185 bipolar
Subject Code: Model Answer Page No: / N
Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate
PART MAX1658C/D MAX1659C/D TOP VIEW
19-1263; Rev 0; 7/97 350mA, 16.5V Input, General Description The linear regulators maximize battery life by combining ultra-low supply currents and low dropout voltages. They feature Dual Mode operation,
VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR- 603 203 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT I PN JUNCTION DEVICES 1. Define Semiconductor.
has to supply the charge carriers
ELECTRONIC DEVICES AND CIRCUITS (16PHP102) MULTIPLE CHOICE QUESTIONS UNIT I CHOICE1 CHOICE2 CHOICE3 CHOICE4 ANSWER 1. A transistor has how many pn junctions? 1 2 3 4 2 2. In an npn transistor, the majority
Improving Amplifier Voltage Gain
15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance
ET475 Electronic Circuit Design I [Onsite]
![ET475 Electronic Circuit Design I [Onsite]](/thumbs/89/98281525.jpg "ET475 Electronic Circuit Design I [Onsite]")
ET475 Electronic Circuit Design I [Onsite] Course Description: This course covers the analysis and design of electronic circuits, and includes a laboratory that utilizes computer-aided software tools for
Chip Name Min VolT. Max Volt. Min. Out Power Typ. Out Power. LM386N-1 4 Volts 12 Volts 250 mw 325 mw. LM386N-3 4 Volts 12 Volts 500 mw 700 mw
LM386 Audio Amplifier Analysis The LM386 Voltage Audio Power Amplifier by National Semiconductor and also manufactured by JRC/NJM, is an old chip (mid 70 s) that has been a popular choice for low-power
Microelectronic Circuits
SECOND EDITION ISHBWHBI \ ' -' Microelectronic Circuits Adel S. Sedra University of Toronto Kenneth С Smith University of Toronto HOLT, RINEHART AND WINSTON HOLT, RINEHART AND WINSTON, INC. New York Chicago
SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N
Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate
Crystal Oscillator. Circuit symbol
Crystal Oscillator Crystal Oscillator Piezoelectric crystal (quartz) Operates as a resonant circuit Shows great stability in oscillation frequency Piezoelectric effect : When mechanical stress is applied
TDA W AUDIO AMPLIFIER
TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "AB" amplifier. At ±12V, d = 10 % typically it provides
Lecture (06) Bipolar Junction Transistor
Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One
Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.
Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect
LM125 Precision Dual Tracking Regulator
LM125 Precision Dual Tracking Regulator INTRODUCTION The LM125 is a precision, dual, tracking, monolithic voltage regulator. It provides separate positive and negative regulated outputs, thus simplifying
PartIIILectures. Multistage Amplifiers
University of missan Electronic II, Second year 2015-2016 PartIIILectures Assistant Lecture: 1 Multistage and Compound Amplifiers Basic Definitions: 1- Gain of Multistage Amplifier: Fig.(1-1) A general
Power Amplifiers. Introduction to Power Amplifiers. Amplifiers. Module
Module 5 Amplifiers Introduction to What you ll learn in Module 5. Section 5.0 Introduction to. Understand the Operation of. Section 5.1 Power Transistors & Heat Sinks. Power Transistor Construction. Power
EEE225: Analogue and Digital Electronics
EEE225: Analogue and Digital Electronics Lecture II James E. Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk This Lecture 1 One Transistor Circuits Continued...
Lab 2: Discrete BJT Op-Amps (Part I)
Lab 2: Discrete BJT Op-Amps (Part I) This is a three-week laboratory. You are required to write only one lab report for all parts of this experiment. 1.0. INTRODUCTION In this lab, we will introduce and
Fluorescent display tube level meter driver, 16-point 2 channel, VU scale, bar display
Fluorescent display tube level meter driver, 16-point 2 channel, VU scale, bar display The is a two-channel, 16-point fluorescent display tube driver for VU-scale bar-level meters. It uses a dynamic-drive
A Basis for LDO and It s Thermal Design
A Basis for LDO and It s Thermal Design Introduction The AIC LDO family device, a 3-terminal regulator, can be easily used with all protection features that are expected in high performance voltage regulation
LARGE SIGNAL AMPLIFIERS
LARGE SIGNAL AMPLIFIERS One method used to distinguish the electrical characteristics of different types of amplifiers is by class, and as such amplifiers are classified according to their circuit configuration
UNIT I Introduction to DC & AC circuits
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: Basic Electrical and Electronics Engineering (16EE207) Year & Sem: II-B.
Transistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018
Transistor Biasing DC Biasing of BJT Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com A transistors steady state of operation depends a great deal
Lecture 9 Transistors
Lecture 9 Transistors Physics Transistor/transistor logic CMOS logic CA 1947 http://www.extremetech.com/extreme/164301-graphenetransistors-based-on-negative-resistance-could-spell-theend-of-silicon-and-semiconductors
Chapter 12 Opertational Amplifier Circuits
1 Chapter 12 Opertational Amplifier Circuits Learning Objectives 1) The design and analysis of the two basic CMOS op-amp architectures: the two-stage circuit and the single-stage, folded cascode circuit.
Multistage Amplifiers
Multistage Amplifiers Single-stage transistor amplifiers are inadequate for meeting most design requirements for any of the four amplifier types (voltage, current, transconductance, and transresistance.)
EEE225: Analogue and Digital Electronics
EEE225: Analogue and Digital Electronics Lecture I James E. Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Introduction This Lecture 1 Introduction Aims &
Radio Frequency Electronics
Radio Frequency Electronics Tuned Amplifiers John Battiscombe Gunn Born in 1928 in Egypt (father was a famous Egyptologist), and was Educated in England Worked at IBM s Thomas J. Watson Research Center
UNIT 1 MULTI STAGE AMPLIFIES
UNIT 1 MULTI STAGE AMPLIFIES 1. a) Derive the equation for the overall voltage gain of a multistage amplifier in terms of the individual voltage gains. b) what are the multi-stage amplifiers? 2. Describe