10. Output Stages and Power Supplies. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1

Size: px
Start display at page:

Download "10. Output Stages and Power Supplies. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1"

Transcription

1 10. Output Stages and Power Supplies 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1

2 10.1 Thermal Considerations Considerable power is dissipated as heat in power devices. Unless provisions are for made for this heat to flow flow in the air, the device can be destroyed by overheating. Heat sinks are mounted together with power devices to cool them. Figure 10.1 Typical heat sink for a power device. Figure 10.4 Clip-on heat sinks are suitable for power dissipations of a few watts. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 2

3 Thermal Resistance Most important is the temperature of the pn-junction. The temperature difference is proportional to the thermal power: T J T A = θ JA P D (10.1) T J is the temperature of the junction, T A is the temperature of the ambient P D is the power dissipated in the device θ JC is the called thermal resistance from junction to ambient. For the case of the device T J T C is the temperature of the case θ JC is the called thermal resistance from junction to case JA T C JC = θ JC CS P D θ θ + θ + θ SA (10.2) = (10.3) 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 3

4 Power BJT s 10.2 Power Devices Table Comparison of the parameters of a small signal BJT with those of a power BJT Parameters Maximum power dissipation P Dmax Maximum collector current I Cmax V CEmax f t Output capacitance C obo ( C µ ) Smallsignal BJT (2N2222) 1.8W 0.8A 40V β min V EBmax 6V 7V 300MHz 8pF Power BJT (2N3055A) 115W 15A 60V 0.8MHz pF 1. Power BJT have smaller values of current gain β. 2. The device capacitances of power BJT are higher because of higher junction area. 3. The transition frequency tends to be much lower for power BJT. 4. The reverse leakage current of collector-base junction is larger for power BJT. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 4

5 The Effect of Temperature on BJT Parameters As the temperature increases: 1. β increases. For temperature variation from -55 C to +150 C β can triple in value. 2. The leakage current I CB0 increases. It doubles for each 10 C increase in temperature. 3. Base-emitter voltage V BE decreases by 2.5mV per 1 C. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 5

6 Maximum Ratings and Safe Operating Area Maximum power dissipation limit I V = P (10.4) C CE D max Figure 10.6 Maximum power dissipation limit. Figure 10.7 Safe operating area for a typical 10-A, 100-V, 50-W power BJT. Notice the logarithmic scales for V CE and I C. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 6

7 Other limits: 1. Maximum collector current I Cmax. If it is exceeded the bond-wires melt. 2. Maximum collector-emitter voltage V CE max. Defined from avalanche breakdown or punchthrough. 3. Second breakdown limit. At high V CE the current becomes concentrated in a small area of the junction, in which an overheating appears. Figure 10.7 Safe operating area for a typical 10-A, 100-V, 50-W power BJT. Notice the logarithmic scales for V CE and I C. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 7

8 Power MOSFETS Figure 10.8a Double-diffused power MOSFET. When a positive voltage is applied to the gate, a channel of n-type semiconductor appears in the p+ area below the gate, which connects the drain and the source. The drain current enters from the drain electrode (at the bottom of the picture), reaches the upper surface, where laterally flows to the source. Since the channel is short, its resistance is small, which permits a large current. This device is more appropriate for operating as electronic switch. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 8

9 10.3 Class - A Output Stages The Class - A Emitter - Follower Output Stages Figure Emitter-follower output stage. Efficiency P η = o 100% (10.18) For class A power amplifiers η P max = 25% supplies 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 9

10 Direct coupled circuit having complementary symmetry. During the positive half-wave conducts Q 1 forming the positive half-wave at the output. During the negative half-wave conducts Q 2 forming the negative half wave at the output Class-B Amplifiers Review of Crossover Distortion In fact Q 1 is conducting when v s > 0.6V. Q 2 is on when v s < -0.6V. For 0.6 < v s < 0.6 no BJT conduct. In this way large cross-over distortion are presenting. Figure Basic class-b amplifier that exhibits serious crossover distortion. Figure 9.10 Waveforms for the circuit of Figure Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/

11 Biasing Circuits Figure Adding the bias voltage sources reduces crossover distortion, but unless V bias is reduced with temperature, thermal runaway can occur. Figure By using diodes in the bias network, automatic adjustment of the bias voltage with temperature is provided. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/

12 Power Calculations in Class B Amplifiers Since only one BJT is conducting during one half period, the efficiency of class B amplifier is better. Vmπ η = 100% (10.18) 4V CC η max = 78% at V m = V CC. Figure Output power, device power, and efficiency versus peak output amplitude. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/

13 10.5 Linear Voltage Regulators Overview of Power - Supply Design Ripples of the output voltage of power supplies. Due to Variation of the input ac voltage; Non-ideal rectifying; Variation of the load current. Voltage regulator: circuit that automatically adjusts the output voltage to maintain a nearly constant value, regardless the input voltage and the load current. Linear voltage regulators: transistors are operating in active region. Switching regulators: transistors operate as switches. Figure Line-operated power-supply block diagram. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/

14 Linear Voltage Regulators The Voltage Regulators as a Negative - Feedback System Figure Linear series regulator. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/

15 Series versus Shunt Regulators Series regulators: the output voltage is regulating by the output of an amplifier, which is in series with the load. Shunt regulators: regulating element is in parallel the the load. Figure Simple shunt regulator circuit. The Zener diode operates in reverse breakdown region. The breakdown voltage is stable and depends very small from the current through the diode. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/

16 Integrated - Circuit Voltage Regulators LM78Lxx IC regulator for various positive voltages depending on the digits xx (e.g for 5V; 7809 for 9V; 7812 for 12V; etc.). LM79Lxx IC regulator for various negative voltages depending on the digits xx. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/

ECE:3410 Electronic Circuits

ECE:3410 Electronic Circuits ECE:3410 Electronic Circuits Output Stages and Power Amplifiers Sections of Chapter 8 A. Kruger Power + Output Stages1 Power Amplifiers, Power FETS & BJTs Audio (stereo) MP3 Players Motor controllers Servo

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits Output Stages and Power Amplifiers Sections of Chapter 8 A. Kruger Power + Output Stages1 Power Amplifiers, Power FETS & BJTs Audio (stereo) MP3 Players Motor controllers Servo

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits Output Stages and Power Amplifiers Sections of Chapter 8 A. Kruger Power + Output Stages1 Power Amplifiers, Power FETS & BJTs Audio (stereo) MP3 Players Motor controllers Servo

More information

Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.

Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition. Program Name Program Code Semester Course Title Scheme I Sample Question Paper : Diploma in Electronics Program Group : DE/EJ/IE/IS/ET/EN/EX : Second : Basic Electronics : 70 22216 Time: 3 Hrs. Instructions:

More information

SYLLABUS OSMANIA UNIVERSITY (HYDERABAD)

SYLLABUS OSMANIA UNIVERSITY (HYDERABAD) UNIT - 1 i SYLLABUS OSMANIA UNIVERSITY (HYDERABAD) JUNCTION DIODE Different Types of PN Junction Formation Techniques, PN Junction Characteristics, Biasing, Band Diagrams and Current Flow, Diode Current

More information

UNIT I PN JUNCTION DEVICES

UNIT I PN JUNCTION DEVICES UNIT I PN JUNCTION DEVICES 1. Define Semiconductor. 2. Classify Semiconductors. 3. Define Hole Current. 4. Define Knee voltage of a Diode. 5. What is Peak Inverse Voltage? 6. Define Depletion Region in

More information

Code No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions

More information

VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR- 603 203 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT I PN JUNCTION DEVICES 1. Define Semiconductor.

More information

(a) BJT-OPERATING MODES & CONFIGURATIONS

(a) BJT-OPERATING MODES & CONFIGURATIONS (a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS.

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS. Summer 2016 EXAMINATIONS Subject Code: 17321 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the answer scheme. 2) The

More information

Small signal Amplifier stages. Figure 5.2 Classification of power amplifiers

Small signal Amplifier stages. Figure 5.2 Classification of power amplifiers 5.1 Introduction When the power requirement to drive the load is in terms of several Watts rather than mili-watts the power amplifiers are used. Power amplifiers form the last stage of multistage amplifiers.

More information

Single-Stage BJT Amplifiers and BJT High-Frequency Model. Single-Stage BJT Amplifier Configurations

Single-Stage BJT Amplifiers and BJT High-Frequency Model. Single-Stage BJT Amplifier Configurations 1 Single-Stage BJT Amplifiers and BJT High-Frequency Model Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s

More information

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number

More information

E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units 2N4401 MMBT4401 C 2N4401 / MMBT4401 E C B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to

More information

3 Circuit Theory. 3.2 Balanced Gain Stage (BGS) Input to the amplifier is balanced. The shield is isolated

3 Circuit Theory. 3.2 Balanced Gain Stage (BGS) Input to the amplifier is balanced. The shield is isolated Rev. D CE Series Power Amplifier Service Manual 3 Circuit Theory 3.0 Overview This section of the manual explains the general operation of the CE power amplifier. Topics covered include Front End Operation,

More information

Homework Assignment 10

Homework Assignment 10 Homework Assignment 10 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =

More information

SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET

SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change

More information

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M) SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave

More information

Code No: R Set No. 1

Code No: R Set No. 1 Code No: R05010204 Set No. 1 I B.Tech Supplimentary Examinations, Aug/Sep 2007 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering,

More information

OBJECTIVE TYPE QUESTIONS

OBJECTIVE TYPE QUESTIONS OBJECTIVE TYPE QUESTIONS Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (A) avalanche breakdown. (B) zener breakdown. (C) breakdown by tunnelling.

More information

Document Name: Electronic Circuits Lab. Facebook: Twitter:

Document Name: Electronic Circuits Lab.  Facebook:  Twitter: Document Name: Electronic Circuits Lab www.vidyathiplus.in Facebook: www.facebook.com/vidyarthiplus Twitter: www.twitter.com/vidyarthiplus Copyright 2011-2015 Vidyarthiplus.in (VP Group) Page 1 CIRCUIT

More information

Subject Code: Model Answer Page No: / N

Subject Code: Model Answer Page No: / N Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

Lesson Plan. Electronics 1-Total 51 Hours

Lesson Plan. Electronics 1-Total 51 Hours Lesson Plan. Electronics 1-Total 5s Unit I: Electrical Engineering materials:(10) Crystal structure & defects; Ceramic materials-structures, composites, processing and uses; Insulating laminates for electronics,

More information

Chapter 11 Output Stages

Chapter 11 Output Stages 1 Chapter 11 Output Stages Learning Objectives 2 1) The classification of amplifier output stages 2) Analysis and design of a variety of output-stage types 3) Overview of power amplifiers Introduction

More information

Chapter 13 Output Stages and Power Amplifiers

Chapter 13 Output Stages and Power Amplifiers Chapter 13 Output Stages and Power Amplifiers 13.1 General Considerations 13.2 Emitter Follower as Power Amplifier 13.3 Push-Pull Stage 13.4 Improved Push-Pull Stage 13.5 Large-Signal Considerations 13.6

More information

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved. Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the

More information

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS UNIT-I - PN DIODEAND ITSAPPLICATIONS 1. What is depletion region in PN junction?

More information

ET215 Devices I Unit 4A

ET215 Devices I Unit 4A ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic

More information

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

Code No: R Set No. 1

Code No: R Set No. 1 Code No: R059210404 Set No. 1 II B.Tech I Semester Supplimentary Examinations, February 2008 ELECTRONIC CIRCUIT ANALYSIS ( Common to Electronics & Communication Engineering and Electronics & Telematics)

More information

Reg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester

Reg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) MODEL ANSWER

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) MODEL ANSWER Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect

More information

Department of Electrical Engineering IIT Madras

Department of Electrical Engineering IIT Madras Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or

More information

I E I C since I B is very small

I E I C since I B is very small Figure 2: Symbols and nomenclature of a (a) npn and (b) pnp transistor. The BJT consists of three regions, emitter, base, and collector. The emitter and collector are usually of one type of doping, while

More information

MODEL ANSWER SUMMER 17 EXAMINATION 17319

MODEL ANSWER SUMMER 17 EXAMINATION 17319 MODEL ANSWER SUMMER 17 EXAMINATION 17319 Subject Title: Electronics Devices and Circuits. Subject Code: Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word

More information

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)

More information

TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30

More information

7. Bipolar Junction Transistor

7. Bipolar Junction Transistor 41 7. Bipolar Junction Transistor 7.1. Objectives - To experimentally examine the principles of operation of bipolar junction transistor (BJT); - To measure basic characteristics of n-p-n silicon transistor

More information

EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS. 1. Define diffusion current.

EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS. 1. Define diffusion current. EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS 1. Define diffusion current. A movement of charge carriers due to the concentration gradient in a semiconductor is called process

More information

Analog and Telecommunication Electronics

Analog and Telecommunication Electronics Politecnico di Torino - ICT School Analog and Telecommunication Electronics F2 Active power devices»mos»bjt» IGBT, TRIAC» Safe Operating Area» Thermal analysis 30/05/2012-1 ATLCE - F2-2011 DDC Lesson F2:

More information

Concepts to be Covered

Concepts to be Covered Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors

More information

FREQUENTLY ASKED QUESTIONS

FREQUENTLY ASKED QUESTIONS FREQUENTLY ASKED QUESTIONS UNIT-1 SUBJECT : ELECTRONIC DEVICES AND CIRCUITS SUBJECT CODE : EC6202 BRANCH: EEE PART -A 1. What is meant by diffusion current in a semi conductor? (APR/MAY 2010, 2011, NOV/DEC

More information

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and

More information

Bipolar Junction Transistors

Bipolar Junction Transistors Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal

More information

LM125 Precision Dual Tracking Regulator

LM125 Precision Dual Tracking Regulator LM125 Precision Dual Tracking Regulator INTRODUCTION The LM125 is a precision, dual, tracking, monolithic voltage regulator. It provides separate positive and negative regulated outputs, thus simplifying

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified)

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) WINTER 16 EXAMINATION Model Answer Subject Code: 17213 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)

More information

Microelectronics Circuit Analysis and Design. Interdigitated BJT: Top and Cross-Sectional Views. Power Amps 10/11/2013. In this chapter, we will:

Microelectronics Circuit Analysis and Design. Interdigitated BJT: Top and Cross-Sectional Views. Power Amps 10/11/2013. In this chapter, we will: Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 8 Output Stages and Power Amplifiers In this chapter, we will: Describe the characteristics of BJT and MOSFET power transistors Define

More information

Figure1: Basic BJT construction.

Figure1: Basic BJT construction. Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).

More information

Lecture Note on Switches Marc T. Thompson, 2003 Revised Use with gratefulness for ECE 3503 B term 2018 WPI Tan Zhang

Lecture Note on Switches Marc T. Thompson, 2003 Revised Use with gratefulness for ECE 3503 B term 2018 WPI Tan Zhang Lecture Note on Switches Marc T. Thompson, 2003 Revised 2007 Use with gratefulness for ECE 3503 B term 2018 WPI Tan Zhang Lecture note on switches_tan_thompsonpage 1 of 21 1. DEVICES OVERVIEW... 4 1.1.

More information

So far we have dealt with only small-signal ampliers. In small-signal ampliers the main factors were amplication linearity gain

So far we have dealt with only small-signal ampliers. In small-signal ampliers the main factors were amplication linearity gain Contents Power Amplier Types Class A Operation Class B Operation Class AB Operation Class C Operation Class D Operation Amplier Eciency Series-Fed Class A Amplier AC-DC Load Lines Maximum Eciency Figure

More information

Lecture 3: Transistors

Lecture 3: Transistors Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,

More information

LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array

LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array General Description The LM389 is an array of three NPN transistors on the same substrate with an audio power amplifier similar to the LM386

More information

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015 Q.2 a. By using Norton s theorem, find the current in the load resistor R L for the circuit shown in Fig.1. (8) Fig.1 IETE 1 b. Explain Z parameters and also draw an equivalent circuit of the Z parameter

More information

Transistors and Applications

Transistors and Applications Chapter 17 Transistors and Applications DC Operation of Bipolar Junction Transistors (BJTs) The bipolar junction transistor (BJT) is constructed with three doped semiconductor regions separated by two

More information

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.

More information

Bipolar Junction Transistor (BJT) Basics- GATE Problems

Bipolar Junction Transistor (BJT) Basics- GATE Problems Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =

More information

PHYS225 Lecture 6. Electronic Circuits

PHYS225 Lecture 6. Electronic Circuits PHYS225 Lecture 6 Electronic Circuits Transistors History Basic physics of operation Ebers-Moll model Small signal equivalent Last lecture Introduction to Transistors A transistor is a device with three

More information

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors Designed for general purpose power amplifier and switching applications. Features 25 A Collector

More information

TRANSISTOR BIASING AND STABILIZATION

TRANSISTOR BIASING AND STABILIZATION TRANSISTOR BIASING AND STABILIZATION 4.1 NEED FOR TRANSISTOR BIASING: If the o/p signal must be a faithful reproduction of the i/p signal, the transistor must be operated in active region. That means an

More information

Roll No. B.Tech. SEM I (CS-11, 12; ME-11, 12, 13, & 14) MID SEMESTER EXAMINATION, ELECTRONICS ENGINEERING (EEC-101)

Roll No. B.Tech. SEM I (CS-11, 12; ME-11, 12, 13, & 14) MID SEMESTER EXAMINATION, ELECTRONICS ENGINEERING (EEC-101) F:/Academic/22 Refer/WI/ACAD/10 SHRI RAMSWAROOP MEMORIAL COLLEGE OF ENGG. & MANAGEMENT (Following Paper-ID and Roll No. to be filled by the student in the Answer Book) PAPER ID: 3301 Roll No. B.Tech. SEM

More information

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each)

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each) Q. No. WINTER 16 EXAMINATION (Subject Code: 17319) Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer

More information

Matched Monolithic Quad Transistor MAT14

Matched Monolithic Quad Transistor MAT14 Matched Monolithic Quad Transistor MAT4 FEATUES Low offset voltage: 400 µv maximum High current gain: 300 minimum Excellent current gain match: 4% maximum Low voltage noise density at 00 Hz, ma 3 nv/ Hz

More information

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013) DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I (Regulations 2013 UNIT-1 Part A 1. What is a Q-point? [N/D 16] The operating point also known as quiescent

More information

LF411 Low Offset, Low Drift JFET Input Operational Amplifier

LF411 Low Offset, Low Drift JFET Input Operational Amplifier Low Offset, Low Drift JFET Input Operational Amplifier General Description These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input

More information

F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics

F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics Time: 3 Hrs.] Prelim Question Paper Solution [Marks : 70 Q.1 Attempt any FIE of the following : [10] Q.1(a) Draw the symbols for (i)

More information

EJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre

EJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre EJECICIOS DE COMPONENTES ELECTÓNICOS. 1 er cuatrimestre 2 o Ingeniería Electrónica Industrial Juan Antonio Jiménez Tejada Índice 1. Basic concepts of Electronics 1 2. Passive components 1 3. Semiconductors.

More information

Chapter 8. Field Effect Transistor

Chapter 8. Field Effect Transistor Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There

More information

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Lecture outline Historical introduction Semiconductor devices overview Bipolar Junction Transistor (BJT) Field

More information

BJT Circuits (MCQs of Moderate Complexity)

BJT Circuits (MCQs of Moderate Complexity) BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r

More information

Exam Write down one phrase/sentence that describes the purpose of the diodes and constant current source in the amplifier below.

Exam Write down one phrase/sentence that describes the purpose of the diodes and constant current source in the amplifier below. Exam 3 Name: Score /94 Question 1 Short Takes 1 point each unless noted otherwise. 1. Write down one phrase/sentence that describes the purpose of the diodes and constant current source in the amplifier

More information

EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS

EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS 1. List the PN diode parameters. 1. Bulk Resistance. 2. Static Resistance/Junction Resistance (or) DC Forward Resistance 3. Dynamic

More information

Power Amplifiers. Class B Class AB

Power Amplifiers. Class B Class AB ower Amplifiers Class B Class AB Class B he circuit each transistor conducts for a half of every signal period complementary pair push-pull arrangement peration vi ( 0.6; 0.6) (off), (off) v 0 vi v 0.6

More information

VALLIAMMAI ENGINEERING COLLEGE

VALLIAMMAI ENGINEERING COLLEGE VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR 60320 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING QUESTION BANK Academic Year: 2018 2019 Odd Semester Subject: EC8353 - ELECTRON DEVICES

More information

WINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the

WINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the WINTER 14 EXAMINATION Subject Code: 17213 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)

More information

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, yderabad -500 043 INFORMATION TECNOLOGY Course Title Course Code Regulation Course Structure Course Coordinator Team of Instructors COURSE DESCRIPTION

More information

Unit III FET and its Applications. 2 Marks Questions and Answers

Unit III FET and its Applications. 2 Marks Questions and Answers Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric

More information

Shankersinh Vaghela Bapu Institute of Technology INDEX

Shankersinh Vaghela Bapu Institute of Technology INDEX Shankersinh Vaghela Bapu Institute of Technology Diploma EE Semester III 3330905: ELECTRONIC COMPONENTS AND CIRCUITS INDEX Sr. No. Title Page Date Sign Grade 1 Obtain I-V characteristic of Diode. 2 To

More information

Y Low quiescent current drain. Y Voltage gains from 20 to 200. Y Ground referenced input. Y Self-centering output quiescent voltage.

Y Low quiescent current drain. Y Voltage gains from 20 to 200. Y Ground referenced input. Y Self-centering output quiescent voltage. LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array General Description The LM389 is an array of three NPN transistors on the same substrate with an audio power amplifier similar to the LM386

More information

Mechatronics and Measurement. Lecturer:Dung-An Wang Lecture 2

Mechatronics and Measurement. Lecturer:Dung-An Wang Lecture 2 Mechatronics and Measurement Lecturer:Dung-An Wang Lecture 2 Lecture outline Reading:Ch3 of text Today s lecture Semiconductor 2 Diode 3 4 Zener diode Voltage-regulator diodes. This family of diodes exhibits

More information

Final Exam. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.1 μs. Estimate the 3 db bandwidth of the amplifier.

Final Exam. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.1 μs. Estimate the 3 db bandwidth of the amplifier. Final Exam Name: Score /100 Question 1 Short Takes 1 point each unless noted otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.1 μs. Estimate the 3 db bandwidth

More information

UNIT 3: FIELD EFFECT TRANSISTORS

UNIT 3: FIELD EFFECT TRANSISTORS FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are

More information

PESIT BANGALORE SOUTH CAMPUS BASIC ELECTRONICS

PESIT BANGALORE SOUTH CAMPUS BASIC ELECTRONICS PESIT BANGALORE SOUTH CAMPUS QUESTION BANK BASIC ELECTRONICS Sub Code: 17ELN15 / 17ELN25 IA Marks: 20 Hrs/ Week: 04 Exam Marks: 80 Total Hours: 50 Exam Hours: 03 Name of Faculty: Mr. Udoshi Basavaraj Module

More information

Week 12: Output Stages, Frequency Response

Week 12: Output Stages, Frequency Response ELE 2110A Electronic Circuits Week 12: Output Stages, Frequency esponse (2 hours only) Lecture 12-1 Output Stages Topics to cover Amplifier Frequency esponse eading Assignment: Chap 15.3, 16.1 of Jaeger

More information

SYED AMMAL ENGINEERING COLLEGE

SYED AMMAL ENGINEERING COLLEGE SYED AMMAL ENGINEERING COLLEGE (Approved by the AICTE, New Delhi, Govt. of Tamilnadu and Affiliated to Anna University, Chennai) Established in 1998 - An ISO 9001:2008 Certified Institution Dr. E.M.Abdullah

More information

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2018 Contents Objective:...2 Discussion:...2 Components Needed:...2 Part 1 Voltage Controlled Amplifier...2 Part 2 A Nonlinear Application...3

More information

CA3018, CA3018A. General Purpose Transistor Arrays. Features. Applications. Part Number Information. Pinout. [ /Title () /Autho.

CA3018, CA3018A. General Purpose Transistor Arrays. Features. Applications. Part Number Information. Pinout. [ /Title () /Autho. [ /Title /Subject /Autho /Keyords ) /Cretor /DOCI FO dfark /Pageode /Useutines /DOC- IEW dfark Semiconductor General Purpose Transistor Arrays The CA8 and CA8A consist of four general purpose silicon NPN

More information

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand

More information

GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013

GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013 Seat No.: Enrolment No. GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013 Subject Code: 131101 Date: 31-05-2013 Subject Name: Basic Electronics Time: 02.30 pm - 05.00 pm Total

More information

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

Electronic Circuits EE359A

Electronic Circuits EE359A Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 20 496 Power BJTs Collector currents in the multi-ampere range Multi-watt power dissipation Achieved by: High temperature

More information

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS Most of the content is from the textbook: Electronic devices and circuit theory,

More information

Paper-1 (Circuit Analysis) UNIT-I

Paper-1 (Circuit Analysis) UNIT-I Paper-1 (Circuit Analysis) UNIT-I AC Fundamentals & Kirchhoff s Current and Voltage Laws 1. Explain how a sinusoidal signal can be generated and give the significance of each term in the equation? 2. Define

More information

Q1 A) Attempt any six: i) Draw the neat symbol of N-channel and P-channel FET

Q1 A) Attempt any six: i) Draw the neat symbol of N-channel and P-channel FET Subject Code:17319 Model Answer Page1 of 27 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model

More information

SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK

SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK Subject with Code : Electronic Circuit Analysis (16EC407) Year & Sem: II-B.Tech & II-Sem

More information

LM148/LM248/LM348 Quad 741 Op Amps

LM148/LM248/LM348 Quad 741 Op Amps Quad 741 Op Amps General Description The LM148 series is a true quad 741. It consists of four independent, high gain, internally compensated, low power operational amplifiers which have been designed to

More information

Matched Monolithic Quad Transistor MAT04

Matched Monolithic Quad Transistor MAT04 a FEATURES Low Offset Voltage: 200 V max High Current Gain: 400 min Excellent Current Gain Match: 2% max Low Noise Voltage at 100 Hz, 1 ma: 2.5 nv/ Hz max Excellent Log Conformance: rbe = 0.6 max Matching

More information

ITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections

ITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections ITT Technical Institute ET215 Devices 1 Unit 6 Chapter 3, Sections 3.7-3.9 Chapter 3 Section 3.7 The Bipolar Transistor as a Switch Objectives: Explain how a transistor can be used as a switch 1. Compute

More information

Downloaded from Downloaded from

Downloaded from  Downloaded from IV SEMESTER FINAL EXAMINATION-2002 The figure in the margin indicates full marks. [i] (110111) 2 = (?) 16 [ii] (788) 10 = (?) 8 Q. [1] [a] Explain the types of extrinsic semiconductors with the help of

More information

Electronic Circuits EE359A

Electronic Circuits EE359A Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 18 488 Class C operation 4 2 h( t) 0 2 4 0 0.2 0.4 0.6 0.8 t 0 ( ) 20 log A j 20 40 60 0 10 20 30 Cconduction_angle

More information