Teccor brand Thyristors 6 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
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1 Lxx06xx & Qxx06xx & Qxx06xHx Series RoHS Description 6 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Sensitive type devices guarantee gate control in Quadrants I & IV needed for digital control circuitry. Standard type devices normally operate in Quadrants I & III triggered from C line. lternistor type devices only operate in quadrants I, II, & III and are used in circuits requiring high dv/dt capability. Features & Benefits gency pproval gency gency File Number L Package: E71639 Main Features Symbol Value Unit I T(RMS) 6 RM /V RRM 400 to 1000 V I GT (Q1) 5 to 50 m Schematic Symbol G RoHS compliant Glass passivated junctions Voltage capability up to 1000 V Surge capability up to 85 Electrically isolated L - Package is UL Recognized for 2500Vrms Solid-state switching eliminates arcing or pplications contact bounce that create voltage transients No contacts to wear out from reaction of switching events Restricted (or limited) RFI generation, depending on activation point of sine wave Requires only a small gate activation pulse in each half-cycle Excellent for C switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are C solid-state switches, light dimmers, power tools, home/brown goods and white goods appliances. lternistor Triacs (no snubber required) are used in applications with extremely inductive loads requiring highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. bsolute Maximum Ratings Sensitive Triac (4 Quadrants) Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) Lxx06Ly/Lxx06Vy/Lxx06Dy T C = 80 C Lxx06Ry/Lxx06Ny T C = 85 C 6 I TSM Non repetitive surge peak on-state current f = 50 Hz t = 20 ms 50 (full cycle, initial = 25 C) f = 60 Hz t = 16.7 ms 60 I 2 t I 2 t Value for fusing t p = 8.3 ms 15 2 s di/dt Critical rate of rise of on-state current I G = 50m with 0.1µs rise time f = 120 Hz = 110 C 70 /μs I GTM Peak gate trigger current t p 10 μs = 110 C 1.6 P G(V) verage gate power dissipation = 110 C 0.4 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to 110 C Note: xx = voltage, y = sensitivity
2 bsolute Maximum Ratings Standard Triac Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) Qxx06Ry / Qxx06Ny T C = 95 C Qxx06Ly T C = 90 C 6 I TSM Non repetitive surge peak on-state current (full cycle, initial = 25 C) f = 50 Hz t = 20 ms 65 f = 60 Hz t = 16.7 ms 80 I 2 t I 2 t Value for fusing t p = 8.3 ms s di/dt Critical rate of rise of on-state current I G = 200m with 0.1µs rise time f = 120 Hz = 125 C 70 /μs I GTM Peak gate trigger current t p 10 μs; I GT I GTM = 125 C 1.6 P G(V) verage gate power dissipation = 125 C 0.5 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to 125 C Note: xx = voltage, y = sensitivity bsolute Maximum Ratings lternistor Triac (3 Quadrants) Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) Qxx06LHy/Qxx06VHy/ Qxx06DHy T C = 95 C Qxx06RHy/Qxx06NHy T C = 100 C 6 I TSM Non repetitive surge peak on-state current (full cycle, initial = 25 C) f = 50 Hz f = 60 Hz I 2 t I 2 t Value for fusing t p = 8.3 ms t = 20 ms t = 16.7 ms Qxx06VHy Qxx06DHy Qxx06LHy Qxx06RHy Qxx06NHy Qxx06VHy Qxx06DHy Qxx06LHy Qxx06RHy Qxx06NHy Qxx06VHy Qxx06DHy Qxx06LHy Qxx06RHy Qxx06NHy di/dt Critical rate of rise of on-state current f = 120 Hz = 125 C 70 /μs I GTM Peak gate trigger current t p 10 μs; I GT I GTM = 125 C 1.6 P G(V) verage gate power dissipation = 125 C 0.5 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to 125 C Note: xx = voltage, y = sensitivity s dditional Information Datasheet Resources Samples
3 Electrical Characteristics ( = 25 C, unless otherwise specified) Sensitive Triac (4 Quadrants) Symbol Test Conditions Quadrant I GT = 12V R L = 60 Ω I II III IV MX. Value Lxx06x5 Lxx06x6 Lxx06x8 V GT = 12V R L = 60 Ω LL MX. 1.3 V V GD = RM R L = 3.3 kω = 110 C LL MIN. 0.2 V I H I T = 100m MX m 400V dv/dt = RM Gate Open = 100 C TYP. V/μs 600V (dv/dt)c (di/dt)c = 3.2 /ms = 110 C TYP V/μs t gt I G = 2 x I GT PW = 15µs I T = 8.5 (pk) TYP μs Unit m Electrical Characteristics ( = 25 C, unless otherwise specified) Standard Triac Symbol Test Conditions Quadrant I GT = 12V R L = 60 Ω I II III IV MX. TYP. Value Qxx06x4 Qxx06x5 V GT = 12V R L = 60 Ω I II III MX. 1.3 V V GD = RM R L = 3.3 kω = 125 C LL MIN. 0.2 V I H I T = 200m MX m dv/dt 400V 120 = RM Gate Open = 125 C 600V 100 MIN. 800V 85 = RM Gate Open = 100 C 1000V 100 (dv/dt)c (di/dt)c = 3.2 /ms = 125 C TYP. 4 4 V/μs t gt I G = 2 x I GT PW = 15µs I T = 8.5 (pk) TYP μs Unit m V/μs Electrical Characteristics ( = 25 C, unless otherwise specified) lternistor Triac (3 Quadrants) Value Symbol Test Conditions Quadrant Unit Qxx06xH3 Qxx06xH4 I GT = 12V R L = 60 Ω I II III MX m V GT = 12V R L = 60 Ω I II III MX. 1.3 V V GD = RM R L = 3.3 kω = 125 C I II III MIN. 0.2 V I H I T = 100m MX m dv/dt = RM Gate Open = 125 C Qxx06VHy / Qxx06DHy Qxx06LHy / Qxx06RHy / Qxx06NHy MIN. 400V V V V V V 250 = RM Gate Open = 100 C LL 1000V 150 (dv/dt)c (di/dt)c = 3.2 /ms = 125 C MIN V/μs t gt I G = 2 x I GT PW = 15µs I T = 8.5 (pk) TYP μs Note: xx = voltage, x = package, y = sensitivity V/μs
4 Static Characteristics Symbol Test Conditions Value Unit V TM I TM = 11.3 t p = 380 µs MX V Lxx06xy = 25 C V 20 μ = 110 C V 0.5 m = 25 C V 50 μ I DRM / I RRM RM = V RRM Qxx06xy = 125 C V 2 = 100 C 1000V MX. 3 m Qxx06xHy V 10 = 25 C 1000V 20 = 125 C V 3 = 100 C 1000V 2 μ m Thermal Resistances Symbol Parameter Value Unit L/Qxx06Ryy / L/Qxx06Nyy 1.8 R θ(j-c) Junction to case (C) L/Qxx06Lyy 3.3 C/W L/Qxx06Vyy / L/Qxx06Dyy 3.2 L/Qxx06Ryy 45 R θ(j-) Junction to ambient L/Qxx06Lyy 50 C/W L/Qxx06Vyy 70 Note: xx = voltage, x = package, y = sensitivity, yy = type & sensitivity Figure 1: Definition of Quadrants Figure 2: Normalized DC Gate Trigger Current for ll Quadrants vs. Junction Temperature LL POLRITIES RE REFERENCED TO POSITIVE (Positive Half Cycle) I GT - (-) I GT GTE REF QII QIII QI QIV (+) I GT GTE REF + I GT I GT Ratio of I GT ( = 25 C) (-) I GT GTE (+) I GT GTE REF - NEGTIVE (Negative Half Cycle) REF NOTE: lternistors will not operate in QIV Junction Temperature ( )- C Note: lternistors will not operate in QIV
5 Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: Normalized DC Gate Trigger Voltage for ll Quadrants vs. Junction Temperature I H I H ( = 25 C) V GT V GT ( = 25 C) Ratio of 1.0 Ratio of Junction Temperature ( )- C Junction Temperature ( )- ºC Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum llowable Case Temperature vs. On-State Current (Sensitive Triac) verage On-State Power Dissipation (P D(V) ) - Watts CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: RMS On-State Current (I T(RMS) ) - mps Maximum llowable Case Temperature (T C ) - C Lxx06Ly Lxx06Vy Lxx06Dy CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 360 CSE TEMPERTURE: Measured as shown on Dimensional Drawings Lxx06Ry RMS On-State Current (I T(RMS) ) - mps 6 7 Figure 7: Maximum llowable Case Temperature vs. On-State Current (Standard Triac) Figure 8: Maximum llowable Case Temperature vs. On-State Current (lternistor Triac) Maximum llowable Case Temperature (T C ) - C Qxx06Ly CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 360 CSE TEMPERTURE: Measured as shown on Dimensional Drawings Qxx06Ry Qxx06Ny RMS On-State Current (I T(RMS) ) - mps 6 7 Maximum llowable Case Temperature (T C ) - C Qxx06LHy Qxx06VHy Qxx06DHy CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 360 CSE TEMPERTURE: Measured as shown on Dimensional Drawings Qxx06RHy Qxx06NHy RMS On-State Current (I T(RMS) ) - mps 6 7
6 Figure 9: Maximum llowable mbient Temperature vs. On-State Current (Sensitive / Standard Triac) Figure 10: Maximum llowable mbient Temperature vs. On-State Current (lternistor Triac) Maximum llowable mbient Temperature (T ) - C L/Qxx06Vy CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 360 FREE IR RTING NO HETSINK Lxx06Ly Lxx06Ry Qxx06Ly Qxx06Ry Qxx06Ny Maximum llowable mbient Temperature (T ) - C Qxx06VHy CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 360 CSE TEMPERTURE: Measured as shown on Dimensional Drawing Qxx06LHy Qxx06RHy Qxx06NHy RMS On-State Current (I T(RMS) ) - mps RMS On-State Current [I T(RMS) ] - mps Figure 11: On-State Current vs. On-State Voltage (Typical) 20 Postitive or Negative Instantaneous On-State Current (i T ) - mps T C = 25 C Postitive or Negative Instantaneous On-State Voltage (v T ) - Volts
7 Figure 12: Surge Peak On-State Current vs. Number of Cycles (Sensitive / Standard Triac) Peak Surge (Non-Repetitive) On-State Current (I TSM ) - mps Lxx06Ly Lxx06Ry Lxx06Vy Lxx06Dy Qxx06Ly Qxx06Ry Qxx06Ny SUPPLY FREQUENCY: 60 Hz Sinusoidal LOD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration- Full Cycles Figure 13: Surge Peak On-State Current vs. Number of Cycles (lternistor Triac) Peak Surge (Non-Repetitive) On-State Current (I TSM ) - mps Qxx06VHy Qxx06DHy Qxx06LHy Qxx06RHy Qxx06NHy SUPPLY FREQUENCY: 60 Hz Sinusoidal LOD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration- Full Cycles Note: xx = voltage, x = package, y = sensitivity, yy = type & sensitivity
8 Temperature Teccor brand Thyristors Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 150 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) seconds Peak Temperature (T P ) /-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C Physical Specifications Environmental Specifications Terminal Finish Body Material Terminal Material Design Considerations 100% Matte Tin-plated UL recognized epoxy meeting flammability classification 94V-0 Copper lloy Careful selection of the correct device for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking (RM ) Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-1040, Cond pplied Peak C 125 C for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40 C to +150 C; 15-min dwell-time EI / JEDEC, JESD hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; 150 C 1008 hours; -40 C MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 Cond E
9 Dimensions TO-220B (R-Package) Non-Isolated Mounting Tab Common with Center Lead Ø E B C D T C MESURING POINT O P RE (REF.) 0.17 IN Dimension Inches Millimeters Min Max Min Max B C D E G F L H R NOTCH IN GTE LED TO ID. NON-ISOLTED TB F G H J K K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs, (0.904 Nm). L M N O P R Dimensions TO-220B (L-Package) Isolated Mounting Tab Ø E B C D T C MESURING POINT RE (REF.) 0.17 IN 2 O P Dimension Inches Millimeters Min Max Min Max B C D E F F G L H R G H J K K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs, (0.904 Nm). L M N O P R
10 Dimensions TO-263B (N-Package) D 2 -PK Surface Mount B V T C MESURING POINT C E RE: 0.11 IN 2 Dimension Inches Millimeters Min Max Min Max B S C W U D GTE K J E G D F H F G H J K S V U W Dimensions TO-251 (V-Package) V-PK Through Hole E D T C MESURING POINT H J RE: IN Inches Millimeters Dimension Min Typ Max Min Typ Max B B C D E C P Q R S K F G H I J GTE I G F L K L P Q R S
11 Dimensions TO-252 (D-Package) D-PK Surface mount B E D T C MESURING POINT Dimension Inches Millimeters Min Typ Max Min Typ Max B C I G P Q GTE F O L M N RE: IN 2 K J H C D E F G H I J K L M N O P Q
12 Product Selector Part Number Voltage Gate Sensitivity Quadrants 400V 600V 800V 1000V I - II - III IV Type Package Lxx06L5 X X 5 m 5 m Sensitive Triac TO-220L Lxx06D5 X X 5 m 5 m Sensitive Triac TO-252 D-PK Lxx06R5 X X 5m 5m Sensitive Triac TO-220R Lxx06V5 X X 5 m 5 m Sensitive Triac TO-251 V-PK Lxx06L6 X X 5 m 10 m Sensitive Triac TO-220L Lxx06D6 X X 5 m 10 m Sensitive Triac TO-252 D-PK Lxx06R6 X X 5m 10m Sensitive Triac TO-220R Lxx06V6 X X 5 m 10 m Sensitive Triac TO-251 V-PK Lxx06L8 X X 10 m 20 m Sensitive Triac TO-220L Lxx06D8 X X 10 m 20 m Sensitive Triac TO-252 D-PK Lxx06R8 X X 10m 20m Sensitive Triac TO-220R Lxx06V8 X X 10 m 20 m Sensitive Triac TO-251 V-PK Qxx06VH3 X X 10 m lternistor Triac TO-251 V-PK Qxx06DH3 X X 10 m lternistor Triac TO-252 D-PK Qxx06L4 X 25 m Standard Triac TO-220L Qxx06R4 X 25 m Standard Triac TO-220R Qxx06N4 X 25 m Standard Triac TO-263 D²-PK Qxx06LH3 X X 10m lternistor Triac TO-220L Qxx06RH3 X X 10m lternistor Triac TO-220R Qxx06LH4 X X X X 35 m lternistor Triac TO-220L Qxx06RH4 X X X X 35 m lternistor Triac TO-220R Qxx06VH4 X X X X 35 m lternistor Triac TO-251 V-PK Qxx06DH4 X X X X 35 m lternistor Triac TO-252 D-PK Qxx06NH4 X X X X 35 m lternistor Triac TO-263 D²-PK Qxx06L5 X X X 50 m Standard Triac TO-220L Qxx06R5 X X X 50 m Standard Triac TO-220R Qxx06N5 X X X 50 m Standard Triac TO-263 D²-PK Packing Options Part Number Marking Weight Packing Mode Base Quantity Lxx06L/RyTP Lxx06L/Ry 2.2 g Tube Pack 500 (50 per tube) Lxx06DyTP Lxx06Dy 0.3 g Tube 750 (75 per tube) Lxx06DyRP Lxx06Dy 0.3 g Embossed Carrier 2500 Lxx06VyTP Lxx06Vy 0.4 g Tube 750 (75 per tube) Qxx06L/RyyTP Qxx06L/Ryy 2.2 g Tube Pack 500 (50 per tube) Qxx06NyyTP Qxx06Nyy 1.6 g Tube 500 (50 per tube) Qxx06NyyRP Qxx06Nyy 1.6 g Embossed Carrier 500 Qxx06DyyTP Qxx06Dyy 0.3 g Tube 750 (75 per tube) Qxx06DyyRP Qxx06Dyy 0.3 g Embossed Carrier 2500 Qxx06VyyTP Qxx06Vyy 0.4 g Tube 750 (75 per tube) Note: xx = voltage; yy = sensitivity
13 TO-252 Embossed Carrier Reel Pack (RP) Specifications Meets all EI Standards (4.0) Gate DI (1.5) 0.63 (16.0) (13.3) * XXXXXX XX DC XXXXXX XX DC XXXXXX XX DC XXXXXX * Cover tape (8.0) (13.0) rbor Hole Dia (330.0) Dimensions are in inches (and millimeters) (16.3) Direction of Feed TO-263 Embossed Carrier Reel Pack (RP) Specifications Meets all EI Standards 0.63 (16.0) (4.0) Gate DI (1.5) (24.0) (21.0) * * Cover tape (13.0) rbor Hole Dia (330.0) Dimensions are in inches (and millimeters) (25.7) Direction of Feed
14 Teccor brand Thyristors Part Numbering System Part Marking System Q L H4 56 TO-251- (V Package) TO-252- (D Package) DEVICE TYPE L : Sensitive Triac Q : Triac or lternistor LED FORM DIMENSIONS xx : Lead Form Option L6006V5 L6006V5 VOLTGE RTING 40 : 400V 60 : 600V 80 : 800V K0 : 1000V CURRENT 06: 6 PCKGE TYPE L : TO-220 Isolated R : TO-220 Non-Isolated N : TO-263 (D 2 PK) V : TO-251 (VPK) D : TO-252 (DPK) SENSITIVITY & TYPE Sensitive Triac: 3 : 3 m (QI, II, III, IV) 5 : 5 m (QI, II, III, IV) 6 : 5 m (QI, II, III) 10 m (QIV) 8 : 10 m (QI, II, III) 20 m (QIV) Standard Triac: 4 : 25 m (QI, II, III) 5 : 50 m (QI, II, III) lternistor Triac: H3 : 10 m (QI, II, III) H4 : 35 m (QI, II, III) YMLDD YMLDD Date Code Marking Y:Year Code M: Month Code L: Location Code DD: Calendar Code TO-220 B - (L and R Package) TO-263 B - (N Package) Q6006R5 YM Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code
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Standard Bidirectional SIDACs Kxxx1GL Series RoHS Description Schematic Symbol The Multipulse SIDAC is a voltage switch used in Metal- Halide lamp ignition circuits, as well as High Pressure Sodium lamp
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Kxxxzy SIDAC Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance
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MC Multiport Series - MS-13 RoHS Pb e3 Description The MC Multiport Series MS-13 are low capacitance SIDCtor thyristors designed to protect broadband equipment from damaging overvoltage transients. The
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Selected Packages* File #E71639 U.L. RECONIZED TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-22 *TO-218X 3-lead Compak *TO-22 TO-251 V-Pak (1 to 7 ) E6 eneral Description The Teccor line of thyristor SCR
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Selected Packages* U.L. RECOGNIZED File #E71639 TO - 92 THERMOTAB TO-22AB TO-22AB G Sensitive Triacs (.8 8. ) 11 General Description Teccor's line of sensitive gate triacs includes devices with current
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Description The HTM, HT, and ST series of bilateral trigger DIACs offer a range of voltage characteristics from 27V to 70V. A DIAC semiconductor is a full-wave or bidirectional Thyristor. It is triggered
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Phillip Havens Oct 2008 SIDCtor Protection Thyristors SEP Biased Series - 5x6 QN RoHS Pb e3 Description gency pprovals gency Pinout Designation Line in Ground Line in Schematic Symbol Line In (1 -Bias
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Phillip Havens Oct 2008 SIDCtor Protection Thyristors SEP Biased Series - 5x6 QN RoHS Pb e3 Description gency pprovals gency gency ile Number The new SEP (SIDCtor Thyristor Ethernet/PoE Protector series
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* Selected Packages U.L. RECONIZED File #E71639 E2 TO-92 TO-22 *TO-22 3-lead Compak TO-263 D 2 Pak TO-252 D-Pak *TO-3 Fastpak TO-251 V-Pak (.8 A to 35 A) RoHS E2 eneral Description These gated triacs from
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MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
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mperes / Up to 16 Volts R OUTLINE DRWING B C J F 1 3 L H Q - DI. (4 TYP.) P - M1 THD (3 TYP.) T - (4 TYP.) S 4 7 5 6 E K M G D LD43 5 Dual SCR Module mperes / 8-16 Volts LD43 Outline Dimensions Dimension
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STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
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Overvoltage protected AC switch (ACS ) Applications Datasheet - production data Features Blocking voltage: V DRM / V RRM = +/- 700 V Avalanche controlled: V CL typ. = 1100 V Nominal conducting current:
More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. * Selected Packages U.L. RECONIZED File #E71639 E4 *TO-22 *TO-218X *TO-218
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20 A Snubberless Triacs Datasheet production data Features I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma Description G A2 A1 The Triacs use high performance glass passivated
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More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. BTA16, BTB16 and T16 Series SNUBBERLESS, LOGIC LEVEL & STANDARD 16A TRIACS
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MCR70x Series Pb Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where
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MAC210A8, MAC210A10 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full wave silicon gate
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MAC228A Pb Description Designed primarily for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching
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MCR703 Series Pb Description PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability
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Overvoltage protected AC switch Description Datasheet production data Features OUT COM TO-220FPAB Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar technology High noise immunity against
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3 Quadrants Standard TRIAC V DRM = 6 V I T(RMS) = 5 A I TSM = 6 A I GT = 35mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 5A) Gate Trigger Current : 35mA High commutation
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AC switch family Transient protected AC switch (ACS ) Main product characteristics Overvoltage protection by crowbar technology High noise immunity - static dv/dt > 300 V/µs Applications AC ON/OFF static
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MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
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MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection
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High temperature 12 A Snubberless Triacs Features Medium current Triac 150 C max. T j turn-off commutation Low thermal resistance with clip bonding Very high 3 quadrant commutation capability G A1 Packages
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High temperature 16 A SCRs Datasheet production data Description Thanks to a junction temperature T j up to 150 C and a non-isolated TO-220 package, the TN1610H-6T offers high thermal performance operation
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SNUBBERLESS, LOIC LEVEL & STANDARD 1A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 1 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 to 5 ma DESCRIPTION Available either in through-hole or surface-mount packages,
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Triac 600V, 4 STNDRD TRIC This device is suitable for low power C switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching
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P4SMA-E Series RoHS Pb e3 Description The P4SMA-E series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
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P4SMA Series RoHS Pb e3 Uni-directional Bi-directional Description The P4SMA series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other
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P6SMB Series RoHS Pb e3 Description Uni-directional The P6SMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient
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