Features. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J
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1 Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated to ensure long term reliability and parametric stability. Features Main Features Symbol Value Unit I T(RMS) V DRM /V RRM 400 to 600 V I GT 200 µ RoHS compliant and Halogen-Free Thru hole and surface mount packages Surge capability > 15mps Blocking voltage (V DRM / V RRM ) capability up to 600V Schematic Symbol High dv/dt noise immunity Improved turn-off time (tq) < 35 μsec. Sensitive gate for direct microprocessor interface pplications The Sx02xS EV series is specifically designed for Gas Ignition applications that require high pulse surge current capability. G K bsolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) TO-92 T C = 65 C SOT-223 T L = 95 C I T(V) verage on-state current TO-92 T C = 65 C SOT-223 T C = 95 C 0.95 I TSM Non repetitive surge peak on-state current (Single cycle, initial = 25 C) TO-92 SOT-223 F = 50 Hz 12.5 F = 60 Hz 15.0 I 2 t I 2 t Value for fusing t p = 10 ms F = 50 Hz 0.78 t p = 8.3 ms F = 60 Hz s di/dt Critical rate of rise of on-state current IG = 10m TO-92 SOT-223 = 125 C 50 /μs I GM Peak gate current t p = 10 μs = 125 C 1.0 P G(V) verage gate power dissipation = 125 C 0.1 W T stg Storage junction temperature range -40 to 150 C Operating junction temperature range -40 to 125 C
2 Electrical Characteristics ( = 25 C, unless otherwise specified) Symbol Description Test Conditions Min Sx02xS Max Unit I GT DC Trigger Current V D = 12V; R L = 60 Ω µ V GT DC Trigger Voltage V D = 12V; R L = 60 Ω 0.8 V V GRM Peak Reverse Voltage I RG = 10μ 5 V I H Holding Current R GK = 1 kω 5 m (dv/dt)s Critical Rate-of-Rise of Off-State Voltage = 125 C V D = V DRM / V RRM Exponential Waveform R GK = 1 kω 25 V/μs t q Turn-Off Time = V R GK = 1 kω 35 μs t gt Turn-On Time I G = 10m PW = 15μsec I T = 3.0 (pk) 3 μs Static Characteristics ( = 25 C, unless otherwise specified) Symbol Description Test Conditions Min Value Max Unit V TM Peak On-State Voltage I TM = 3.0 (pk) 1.70 V I DRM Off-State Current, Peak Repetitive = 25 V D = V DRM R GK = 1 kω = 125 V D = V DRM R GK = 1 kω 5 μ 500 μ Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (C) = 1 T (RMS) R θ(j-) Junction to ambient I T = (RMS) Hz C resistive load condition, 100% conduction. TO SOT TO SOT C/W C/W dditional Information Datasheet Resources Samples
3 Figure 1: Normalized DC Trigger Current vs. Junction Temperature Figure 2: Normalized DC Holding Current vs. Junction Temperature Normalized : Trigger Current I T j / I 25ºC Normalized Holding Current (I / I C) Junction Temperature ( ) C Junction Temperature ( ) C Figure 3: Normalized DC Trigger Voltage vs. Junction Temperature Figure 4: On-State Current vs. On-State Voltage (Typical) Normalized : Trigger Voltage (V T j / V 25ºC) Junction Temperature ( ) C Instantaneous On-state Current (IT) mps Instantaneous On-state Voltage (VT) Volts Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum llowable Case Temperature vs. On-State Current verage Power Dissipation, P D (Watts) 1.0 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 o RMS On-state Current [I T(RMS) ] (mps) Max llowable Case Temperature, T C (Celsius) TO-92 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 o CSE TEMPERTURE: Measured as shown on dimensional drawings SOT RMS On-state Current [I T (RMS) ] (mps)
4 Temperature Teccor brand Thyristors Figure 7: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-State Current (I TSM ) mps Devices Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State Current [I T(RMS) ]: Max Rated Value at Specific Case Temperature Notes: 1. control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration Full Cycle Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 150 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Time (min to max) (t s ) seconds Peak Temperature (T P ) /-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C
5 Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations 100% Matte Tin-plated. UL recognized epoxy meeting flammability classification 94V-0. Copper lloy Careful selection of the correct device for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-1040, Cond pplied Peak C 125 C for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40 C to +150 C; 15-min dwell-time EI / JEDEC, JESD hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; 150 C 1008 hours; -40 C MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 Cond E Dimensions TO-92 (E Package) T MESURING POINT C Dimensions Inches Millimeters Min Max Min Max B B SETING PLNE C C GTE D E F G CTHODE H I D NODE G H I J F E J F
6 Dimensions SOT-223 Dimensions Inches Millimeters Min Typ Max Min Typ Max (0.059 ) (0.059 ) Pad Layout for SOT (0.047 ) (3x) 3.3 (0.130 ) 2.3 (0.091 ) 4.6 (0.181 ) Dimensions in Millimeters (Inches) Recommended Soldering Footprint for SOT (0.252 ) B C D E F G H I J K 10 MX Product Selector Voltage Part Number 400V 600V Sensitivity Package S402ES X 200µ TO-92 S602ES X 200µ TO-92 S402TS X 200µ SOT-223 S602TS X 200µ SOT-223 Packing Options Part Number Marking Weight Packing Mode Base Quantity Sx02ES Sx02ES g Bulk 2500 Sx02ESP Sx02ES g mmo Pack 2000 Sx02ESRP Sx02ES g Tape & Reel 2000 Sx02TSRP Sx02TS g Tape & Reel 1000 Note: x = voltage
7 TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EI-468-C Standards 1.6 (41.0) (6.0) 0.02 () (2.5) MX 1.26 (32.0) (18.0) (9.0) (12.7) 0.1 (2.54) 14.17(360.0) 0.2 (5.08) DI (4.0) Flat up 1.97 (50.0) Direction of Feed Dimensions are in inches (and millimeters). TO-92 (3-lead) mmo Pack (P) Radial Leaded Specifications Meets all EI-468-C Standards 1.62 (41.2) (18.0) (6.0) (9.0) 0.02 () (2.5) MX 1.27 (32.2) (12.7) 0.1 (2.54) 0.2 (5.08) DI (4.0) Directionof Feed Flat down 25 Devices per fold 1.85 (47.0) 12.2 (310.0) 1.85 (47.0) Dimensions are in inches (and millimeters) (338.0)
8 SOT-223 Reel Pack (RP) Specifications mm 4 mm 8 mm 2 mm 1.75 mm 12 mm 5.5 mm K GTE 180 mm 13 mm bor Hole Diameter 13.4 mm Part Numbering System Part Marking System Sx 02 x xx xx SCR SERIES VOLTGE 4: 400V 6: 600V CURRENT 02: PCKING TYPE Blank: Bulk RP: Reel Pack (TO-92) : Embossed Carrier Pack (SOT-223) P: mmo Pack (TO-92) SENSITIVITY S: 200µ Sensitive SCR PCKGE TYPE E: TO-92 T: SOT-223 TO92 SOT223 Line1 = Littelfuse Part Number Line2 = continuation Littelfuse Part Number Y = Last Digit of Calendar Year M = Letter Month Code (-L for Jan-Dec) L = Location Code DD = Calendar Date
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MCR218-2G, MCR218-4G, MCR218-6G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
More informationTriacs. ( Amps) Features
Selected Packages* U.L. RECOGNIZED File #E71639 THERMOTAB TO-22AB TO - 92 TO-22AB G Triacs (.8 25 ) 2 General Description These gated triacs from Teccor Electronics are part of a broad line of bidirectional
More informationTransient Voltage Suppression Diodes. Surface Mount 400W > P4SMA series. Features. less than 1μA when V BR. Applications. Additional Infomarion
P4SMA Series RoHS Pb e3 Uni-directional Bi-directional Description The P4SMA series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other
More informationSLD8S Series RoHS Pb e3
SLD8S Series RoHS Pb e3 Description The SLD8S Series TVS Diode is housed in a SMTO-263 package with lead modifications. It is designed to protect sensitive electronics against lightning and inductive load
More informationP6SMB Series. Transient Voltage Suppression Diodes. Surface Mount 600W > P6SMB series. Description
P6SMB Series RoHS Pb e3 Description Uni-directional The P6SMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient
More informationMCR25DG, MCR25MG, MCR25NG
MCR25DG, MCR25MG, MCR25NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
More informationC122F1G. Thyristors. Surface Mount 50V > C122F1G. Description
Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
More informationC106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description
C106 Series Pb Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability
More information5KP Series. Transient Voltage Suppression Diodes. Axial Leaded 5 kw > 5KP series. Description
5KP Series RoHS Pb e3 Description Uni-directional The 5KP Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage
More informationMAC16DG, MAC16MG, MAC16NG
MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
More informationSP4040 Series 3.3V 75A Rail Clamp Array
3.3V 7A Rail Clamp Array RoHS Pb GREEN Description The SP4040 provides overvoltage protection for applications such as 0/00/000 Base-T Ethernet and T3/ E3 interfaces. This device has a low capacitance
More informationMCR69-2, MCR69-3. Thyristors. Surface Mount V > MCR69-2, MCR69-3. Description. Designed for overvoltage protection in crowbar circuits.
1 2 3 Thyristors MCR69-2, MCR69-3 Pb Description Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate
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Axial Leaded 6W > P6KE series RoHS Pb Description The is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
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Thyristor High Voltage, Phase Control SCR, 40 TO-247C 2 () (K) (G) 3 PRIMRY CHRCTERISTICS I T(V) 35 V DRM /V RRM 800 V, 200 V V TM.45 V I GT 50 m T J -40 C to +25 C Package TO-247C Circuit configuration
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P6SMB-E Series RoHS Pb e3 Description The P6SMB-E series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
More informationP4SMA-E Series. TVS Diodes Surface Mount 400W > P4SMA-E series Series. Description. Uni-directional
P4SMA-E Series RoHS Pb e3 Description The P4SMA-E series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
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More informationUNISONIC TECHNOLOGIES CO., LTD
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5KPA Series RoHS Pb e3 Descriptions Uni-directional The 5KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage
More informationPOW-R-BLOK TM Dual SCR Isolated Module 250 Amperes / Up to 1600 Volts. ND43 25 Dual SCR Isolated POW-R-BLOK TM Module 250 Amperes / Up to 1600 Volts
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More information3KP Series. Transient Voltage Suppression Diodes. Axial Leaded 3000W > 3KP series. Description
3KP Series RoHS Pb e3 3/3/27 LFPCN2244 5KP Series Description Uni-directional The 3KP Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning
More informationSymbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
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More informationP6SMB Series. TVS Diodes Surface Mount 600W > P6SMB series. Description. Uni-directional
RoHS Pb e3 Uni-directional Description Bi-directional The P6SMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient
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More informationSMF Series. Transient Voltage Suppression Diodes. Surface Mount 200W > SMF Series. Description. Uni-directional
SMF Series RoHS Pb e3 Uni-directional Description The SMF series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage
More information2N6394. Thyristors. Surface Mount V > 2N6394. Description
2N6394 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions for Greater Parameter Uniformity
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MAC228A Pb Description Designed primarily for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching
More information2N6504 Series. Thyristors. Surface Mount V > 2N6504 Series. Description
2N6504 Series Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions for
More informationMAC8DG, MAC8MG, MAC8NG
MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
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