SMK0990FD Advanced N-Ch Power MOSFET
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1 z SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =900V Low gate charge: Q g =52nC (Typ.) Low drain-source On resistance: R DS(on) =1.4Ω (Max.) RoHS compliant device 100% avalanche tested Ordering Information Part Number Marking Package G D S SMK0990FD SMK0990 TO-220F-3L TO-220F-3L Marking Information AUK AUK YMDD ΔYMDD SMK0990 SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) YMDD -. : Management Code (H: Halogen Free) -. : Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code Absolute maximum ratings (T C =25 C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage V DSS 900 V Gate-source voltage V GSS 30 V Drain current (DC) * I D T c =25 C 9 A T c =100 C 5.7 A Drain current (Pulsed) * I DM 36 A Single pulsed avalanche energy (Note 2) E AS 900 mj Repetitive avalanche current (Note 1) I AR 9 A Repetitive avalanche energy (Note 1) E AR 4.8 mj Power dissipation P D 48 W Junction temperature T J 150 C Storage temperature range T stg -55~150 C * Limited only maximum junction temperature 1 of 9
2 Thermal Characteristics SMK0990FD Characteristic Symbol Rating Unit Thermal resistance, junction to case R th(j-c) Max. 2.6 Thermal resistance, junction to ambient R th(j-a) Max C/W Electrical Characteristics (T C =25 C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS I D =250uA, V GS = V Gate threshold voltage V GS(th) I D =250uA, V DS =V GS 3-5 V Drain-source cut-off current I DSS V DS =900V, V GS =0V ua V DS =720V, T c =125 C ua Gate leakage current I GSS V DS =0V, V GS = 30V na Drain-source on-resistance R DS(ON) V GS =10V, I D =4.5A Forward transfer conductance (Note 3) g fs V DS =10V, I D =4.5A S Input capacitance C iss Output capacitance C oss V DS =25V, V GS =0V, f=1.0mhz Reverse transfer capacitance C rss Turn-on delay time (Note 3,4) t d(on) Rise time (Note 3,4) t r V DD =450V, I D =9A, Turn-off delay time (Note 3,4) t d(off) R G =25Ω Fall time (Note 3,4) t f (Note 3,4) Q g Total gate charge Gate-source charge (Note 3,4) Q gs V DS =720V, V GS =10V, I D =9A Gate-drain charge (Note 3,4) Q gd pf ns nc Source-Drain Diode Ratings and Characteristics (T C =25 C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) I S Integral reverse diode A Source current (Pulsed) I SM in the MOSFET A Forward voltage V SD V GS =0V, I S =9A V Reverse recovery time (Note 3,4) t rr I S =9A, V GS =0V ns Reverse recovery charge (Note 3,4) Q rr di F /dt=100a/us uc Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=21mH, I AS =9A, V DD =50V, R G =25, Starting T J =25 C 3. Pulse test: Pulse width 300us, Duty cycle 2% 4. Essentially independent of operating temperature typical characteristics 2 of 9
3 Typical Characteristics Curve SMK0990FD Fig. 1 I D - V DS Fig. 2 I D V GS Fig. 3 R DS(ON) - I D Fig. 4 I S - V SD Fig. 5 Capacitance - V DS Fig. 6 V GS - Q G 3 of 9
4 SMK0990FD Typical Characteristics Curve (Continue) Fig. 7 BV DSS - T J Fig. 8 R DS(ON) - T J Fig. 9 I D - T C Fig. 10 Safe Operating Area Fig. 11 Transient Thermal Impedance 4 of 9
5 Fig. 12 Gate Charge Test Circuit & Waveform SMK0990FD Fig. 13 Resistive Switching Test Circuit & Waveform Fig. 14 E AS Test Circuit & Waveform 5 of 9
6 SMK0990FD Fig. 15 Diode Reverse Recovery Time Test Circuit & Waveform 6 of 9
7 SMK0990FD Package Outline Dimensions 7 of 9
8 SMK0990FD The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. 8 of 9
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MSP120N08G 80V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced technology. which provides high performance in on-state resistance, fast switching
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UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
More informationAOD436 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The AOD436 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationTO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
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General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
More informationOperating Junction and 55 to +175 C Storage Temperature Range
Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
More informationAO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a
More informationUNISONIC TECHNOLOGIES CO., LTD UTD408
UNISONIC TECHNOLOGIES CO., LTD UTD408 N-CHANNEL ENHANCEMENT MODE FEATURES * R DS(ON) < 18 mω @ V GS =10V, I D =18A R DS(ON) < 27 mω @ V GS =4.5V, I D =10A * Low capacitance * Optimized gate charge * Fast
More informationN-Channel Power MOSFET 100V, 81A, 10mΩ
N-Channel Power MOSFET 100V, 81A, 10mΩ FEATURES Advanced Trench Technology 100% avalanche tested APPLICATION Synchronous Rectification in SMPS High Speed Power Switching KEY PERFORMANCE PARAMETERS PARAMETER
More informationN-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..
Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current
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UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationMDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω
MDP15N6G / MDF15N6G N-Channel MOSFET 6V MDP15N6G / MDF15N6G N-Channel MOSFET 6V, 15A,.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationTSF18N60MR TSF18N60MR. 600V N-Channel MOSFET. Features. Absolute Maximum Ratings. Thermal Resistance Characteristics
600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
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6N9 UNISONIC TECHNOLOGIES CO., LTD 6.2A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N9 is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar
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UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationSSF6014D 60V N-Channel MOSFET
Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
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UNISONIC TECHNOLOGIES CO., LTD 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
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MDFNG N-channel MOSFET V MDFNG N-Channel MOSFET V, A,.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high
More informationN-Channel Power MOSFET 900V, 4A, 4.0Ω
N-Channel Power MOSFET 900V, 4A, 4.0Ω FEATURES Low R DS(ON) 4Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability APPLICATION High efficiency switch mode power Supply Lighting KEY PERFORMANCE
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