MPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS

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1 General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are ideally suited for IH, I High Power inverters, Motors drives and other applications where switching losses are significant portion of the total losses. MPMDB1RH NPT & Rugged Type 1 IGBT Module Features B CES = 1 Low Conductionn Loss : CE(sa at) =.7 (typ.) Fast & Soft ntiparallel FWDD Short circuit rated : Min. uss at = Isolation Type Package P pplications Induction Heating, Motor Drives, High Power Inverters Welding Machine, UPS 7DM3 Equivalent Circuit bsolute = 5 o C (Per Leg) Characteristicss Symbol Rating Unit CollectorEmitter oltage CES 1 Gate oltage GES ± Continuous Collector Current =5 o C =8 o C I C Pulsed Collector Current (1) I CM Diode Continuous Forward Current =8 o C I F Diode Maximum Forward Current I FM Power Dissipation =5 o C P D 78 W Short Circuit Withstand Time T SC us Operating Junction Temperature Tj 55~ o C Storage Temperature Range T stg 55~15 o C Isolation oltage C 1minute iso Mounting screw Torque : M N.m Note : (1) Repetitive rating : Pulse width limitedd by max. junction temperaturee Sep 1.ersion 1. 1

2 Electrical Characteristics of =5 o C(unless otherwise specified) Static Characteristics Characteristics Symbol Test Condition Min. Typ. Max. Unit CollectorEmitter Breakdown oltage B CES I C = 1m, GE = 1 Gate Threshold oltage GE(th) CE = GE, I C = m Collector CutOff Current I CES CE = 1, GE = 1 m Gate Leakage Current I GES GE = ±, CE = ± n CollectorEmitter saturation voltage Dynamic Characteristics CE(sat) GE = 15, I C = = = 3.3 Total Gate Charge Q g GateEmitter Charge Q ge CC =, I C =, GE = ±15 GateCollector Charge Q gc 3 Input Capacitance C ies 7 Output Capacitance C oes CE = 3, GE =, f = 1.MHz 518 Reverse Transfer Capacitance C res 175 nc pf TurnOn Delay Time t d(on) 135 Rise Time t r TurnOff Delay Time t d(off) CC =, I C =, ns Fall Time Turn on Switching Loss t f E on GE =±15, R G = Ω, Inductive Load 7.7 mj Turn off Switching Loss E off. mj Total Switching Loss E ts 1.7 mj Short Circuit Withstand Time T sc cc =, GE = ±15 R G = Tc = us Electrical Characteristics of =5 o C(unless otherwise specified) Diode Forward oltage FM I F = = =.3 Diode Reverse Recovery Time t rr =5 = ns Diode Peak Reverse Recovery Current I rr I F =, R =, di/dt = /us =5 5 = 15 Diode Reverse Recovery Charge Q rr =5 = 1 nc Sep 1.ersion 1.

3 Thermal Characteristics and Weight Characteristics Symbol Min. Typ. Max. Unit JunctiontoCase(IGBT Part) R θjc.1 /W JunctiontoCase(DIODE Part) R θjc. /W CasetoSink ( Conductive grease applied) R θcs.5 /W Weight of Module Weight 3 g Sep 1.ersion 1. 3

4 Collector Current, I C [] Collector Current,I C [] Common Emitter = CollectorEmitter oltage, CE [] 8 Fig.1 Typical Output Characteristics =5 =15 Collector Current,I C [] GateEmitter oltage, GE [] Common Emitter = Collector Emitter oltage, CE [] Fig. Typical Output Characteristics CE =,I C = = CollectorEmitter oltage, CE [] Gate Charge, Qg[nC] Fig.3 Typical Saturation oltage Characteristics Fig. Gate Charge Characteristics 1 1 Eon( =5 ) Eon( =15 ) 1 1 Eoff( =5 ) Eoff( =15 ) Eon[mJ] 8 Eoff[mJ] R G [Ω ] R G [Ω ] Fig.5 Typical turnon energy = f(r G ) GE = ±15, IC =, CE = Fig. Typical turnoff energy = f(r G ) GE = ±15, IC =, CE = Sep 1.ersion 1.

5 Collector Current,I C [] Thermal Response Zthjc[ /W] E3 Fig.7 Rated Current vs. Case Temperature FRD IGBT Case Temperatute, Tc[ ] T J = GE 15 =5 1E 1E5 1E 1E Rectangular Pulse Duration Time[sec] Power Dissipation[W] Forward Current, I F [] Fig.8 Power Dissipation vs. Case Temperature =5 =15 [ ] Forward Drop oltage, F [] T J P D =f( ) Fig.9 Transient Thermal Impedance Fig. Forward Characteristics Sep 1.ersion 1. 5

6 Package Dimensionn 7DM3 Dimensions are in millimeters, unless otherwise specifiedd Sep 1.ersion 1.

7 DISCLIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Sep 1.ersion 1. 7