SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 600V Super Junction Power Transistor SS*20N60S. Rev. 1.
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1 SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.04
2 September, 2013 SSW20N60S/SSA20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. SSW20N60S TO-247 Absolute Maximum Ratings SSA20N60S TO-3P SJ-FET Features = 150 Typ. RDS(on) = 0.16Ω Ultra Low Gate Charge (typ. Qg = 70nC) 100% avalanche tested SSW20N60S / SSA20N60S 600V N-Channel MOSFET Symbol Parameter SSW/A20N60S Unit V DSS Drain-Source Voltage 600 V I D Drain Current -Continuous (TC = 25 ) -Continuous (TC = 100 ) 20* 12.6* I DM Drain Current Pulsed (Note 1) 62 A V GSS Gate-Source voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 485 mj I AR Avalanche Current (Note 1) 3.5 A E AR Repetitive Avalanche Energy (Note 1) 1 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns A P D Power Dissipation (TC = 25 ) -Derate above W W/ T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds 300 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter SSW/A 20N60S Unit R θjc Thermal Resistance, Junction-to-Case 0.83 /W R θcs Thermal Resistance, Case-to-Sink Typ. 0.5 /W R θja Thermal Resistance, Junction-to-Ambient 62 /W
3 Electrical Characteristics TC = 25 unless otherwise noted Symbol Parameter Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = V VGS = 0V, ID = 250µA, TJ = V ΔBVDSS / ΔTJ Breakdown Voltage Temperature ID = 250µA, Referenced to Coefficient V/ IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - 1 µa - -TJ = µa IGSSA Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V na IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V na On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA V RDS(on) Static Drain-Source On- VGS = 10V, ID = 10A Ω Resistance gfs Forward Trans conductance VDS = 40V, ID = 10A (Note 4) S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = pf Coss Output Capacitance 1.0MHz pf Crss Reverse Transfer Capacitance pf SSW20N60S / SSA20N60S 600V N-Channel MOSFET Switching Characteristics td(on) Turn-On Delay Time VDD = 400V, ID = 10A ns tr Turn-On Rise Time RG = 20Ω(Note 4, 5) ns td(off) Turn-Off Delay Time ns tf Turn-Off Fall Time ns Qg Total Gate Charge VDS = 480V, ID = 10A nc Qgs Gate-Source Charge VGS = 10V (Note 4, 5) nc Qgd Gate-Drain Charge nc Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current A ISM Maximum Pulsed Drain-Source Diode Forward Current A VSD Drain-Source Diode Forward Voltage trr Reverse Recovery Time VR = 400V, IF = 10A di F /dt =100A/µs (Note 4) Qrr Reverse Recovery Charge VGS = 0V, IF = 10A V ns µc Irrm Peak reverse recovery Current A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS =3.5A, VDD=50V, Starting TJ=25 3. I SD ID, di/dt 200A/us, V DD BV DSS, Starting TJ = Pulse Test: Pulse width 300us, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
4 ID[A] Ptot[w] Typical Performance Characteristics Power dissipation Max. transient thermal impedance Tc[ ] Safe operating area TC=25 Typ. output characteristic V DS [V] I D =f(v DS ); T C =25 ; V GS > 7V; D=0; parameter t p I D =f(v DS ); T j =25 ; parameter t p =10us,V GS
5 Typical Performance Characteristics Typ. output characteristic Typ. Drain-Source on resistance I D =f(v DS ); T j =150 ; parameter t p =10us,V GS Typ. Drain-Source on resistance R Dson =f(i D ); T j =150 ; parameter V GS Typ. Transfer characteristic R Dson =f(t j ); T j =150 ; parameter I D =13.1A V GS =10V I D =f(v DS ); V DS >2xI D xr DS(on)max ; parameter t p =10us,
6 EAS[mJ] VBR(DSS)[V] IF[A] VGS[V] Typical Performance Characteristics Forward characteristics of reverse diode Typ. gate charge V SD [V] QV G [nc] I F =f(v SD ); parameter: T j V GS =f(q g ), I D =11 A pulsed Avalanche energy Drain-source breakdown voltage T j [ ] T j [ ] E AS =f(t j ); I D =3.5 A; V DD =50 V V BR(DSS) =f(t j ); I D =1.0 ma
7 C[pF] EOSS[uJ] Typical Performance Characteristics Typ. capacitances V DS [V] C=f(V DS ); V GS =0 V; f=1 MHz Typ. Coss stored energy V DS [V] E OSS =f(v DS )
8 Test circuits Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching times test circuit for inductive load Switching time waveform Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform
9 Test circuits Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform
10 Package Outline TO-247
11 Package Outline TO-3P
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