High-Speed Quad Monolithic SPST CMOS Analog Switch

Transcription

1 High-Speed Quad Monolithic SPST CMOS Analog Fast ing : 55 ns Low Charge Injection: 5 pc Low r DS(on) : 32 TTL/CMOS Compatible Low Leakage: pa Fast Settling Times Reduced ing Glitches High Precision High-Speed ing Sample/Hold Digital Filters Op Amp Gain ing Flight Control Systems Automatic Test Equipment Choppers Communication Systems The DG271 high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds. The military version of the DG271 is manufactured using the high voltage metal gate wafer fabrication process. The military version of the DG271 shares the same performance of the commercial DG271B, which uses the high voltage silicon gate process. CerDIP IN IN 2 Key Ceramic LCC D 1 IN 1 IN 2 D D 1 S 1 S 4 D 4 IN D 2 S 2 S 3 D 3 IN 3 Top View S S S S D 4 IN 4 IN 3 D 3 Top View Logic ON 1 OFF Logic.8 V Logic V FaxBack

2 Temp Range Package Part Number DG271AK 16-Pin CerDIP DG271AK/ to 125 C MEA DG271AZ/883 LCC M2A to V to V Digital Inputs a V S, V D () 2 V to () +2 V or 2 ma, whichever occurs first Current, Any Terminal ma Peak Current, S or D (Pulsed at 1 ms, % duty cycle max) ma Storage Temperature (AK and AZ Suffix) to 1 C Power Dissipation (Package)b 16-Pin CerDIP c mw LCC-2 d mw Notes: a. Signals on S X, D X, or IN X exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 12 mw/ C above 75 C d. Derate mw/ C above 75 C 5 V Reg S X Level Shift/ Drive IN X D X FIGURE 1. FaxBack

3 Parameter Analog Symbol Test Conditions Unless Specified A Suffix 55 to 125 C = 15 V, = 5 V V IN = 2.4 V,.8 V f Tempb Min d Typ c Max d Unit Analog Signal Range e V ANALOG 5 15 V Drain-Source On-Resistance r DS(on) I S = 1 ma, V D = V Off Leakage Current I S(off) I D(off) V D = 14 V, V S = 14 V na Channel On Leakage Current I D(on) + I S(on) V S = V D = 14 V Digital Control Input Current with Voltage High I V IN = 2 V. 1 INH V IN = 15 V. 1 A Input Current with Voltage Low I INL V IN = V. 1 Dynamic Characteristics ON V S = V See Figure 3 Turn-Off Time Charge Injection Q C L = 1 nf, V S = V V gen = V, R gen = See Figure 3 Source Off Capacitance C S(off) VS S = V, V IN = 5 V Drain Off Capacitance C f = 1 MHz D(off) ns 5 pc 8 8 pf Channel On Capacitance C D ( on) V D = V S = V, V IN = V Off Isolation OIRR C L = pf, R L = 1 k 85 f = khz Crosstalk X TALK See Figures 4 and 5 db Supply Positive Supply Current I+ Negative Supply Current I All Channels On or Off V IN = 5 V or V ma Notes: a. Refer to PROCESS OPTION FLOWCHART. b. = 25 C, = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. FaxBack

4 rds(on) Drain-Source On-Resistance ( ) 7 2 r DS(on) vs. V D and Power Supply Voltages 5 V V 15 V 2 V rds(on) Drain-Source On-Resistance ( ) 2 r DS(on) vs. V D and Temperature 125 C 85 C 25 C C 55 C = 15 V = 5 V V D Drain Voltage (V) V D Drain Voltage (V) Input ing Threshold vs. Supply Voltage 2.5 na Leakage Currents vs. Temperature I D(on) 2 V IN ( V ) Leakage 1 na I S(off), I D(off) pa.5 Positive/Negative Supplies (V) pa ing Times vs. Temperature = 15 V = 5 V 55 ing Time vs. Power Supply Voltage Supply Voltage (V) FaxBack

5 9 ing Times vs. Temperature 1 ing Times vs. Power Supply Voltage = 15 V = 5 V 1 7 t (on) t (off) 1 12 t (on) t (off) Positive Supply (V) +15 V Logic Input 5 V V % t r <2 ns t f <2 ns V S D IN 5 V R L 1 k C L 35 pf Input Output V S 9% C L (includes fixture and stray capacitance) 5 V = V S R L R L + r DS(on) FIGURE 2. ing Time FaxBack