U to SST/U to SST/U to Features Benefits Applications

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Abel O’Brien’
5 years ago
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1 SST/U Series Monolithic N-Channel JFET Duals Product Summary SST SST U U U Part Number GS(off) () (BR)GSS Min () Min (ms) I G Typ (pa) GS GS Max (m) U. to. SST/U. to. SST/U. to. Features Benefits Applications Monolithic Design High Slew Rate Low Offset/Drift oltage Low Gate Leakage: pa Low Noise High CMRR: db Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error oltage High System Sensitivity Minimum Error with Large Input Signal Wideband Differential Amps High-Speed,Temp-Compensated, Single-Ended Input Amps High-Speed Comparators Impedance Converters Description The SST/U series of high-performance monolithic dual JFETs features extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. This series has a wide selection of offset and drift specifications with the U featuring a -m offset and -/C drift. The U series hermetically sealed TO-7 package is available with full military processing (see Military Information). The SST series SO- package provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. The SO- package is available with tape-and-reel options for compatibility with automatic assembly methods (see Packaging Information). For similar high-gain products in TO-7 packaging, see the N9/9 data sheet. TO-7 Narrow Body SOIC S NC D 7 G G D NC S D S G D G S Top iew SST, SST Absolute Maximum Ratings Gate-Drain, oltage Gate Current ma Lead Temperature ( / from case for sec.) C Storage Temperature : U Prefix to C SST Prefix to C Top iew U, U, U Operating Junction Temperature to C Power Dissipation : Per Side a mw Total b mw Notes a. Derate. mw/c above C b. Derate mw/c above C Updates to this data sheet may be obtained via facsimile by calling FaxBack, Please request FaxBack document #77. Applications information may also be obtained via FaxBack, request document #799. S- Rev. E, -Apr-97

2 SST/U Series Specifications a Static Limits U SST/U SST/U Parameter Symbol Test Conditions Typ b Min Max Min Max Min Max Unit Breakdown oltage Cutoff oltage (BR)GSS I G = A, DS = (BR)G G I G = A, DS = GS = GS(off) DS =, = na Saturation Drain Current c SS DS =, GS =.... ma GS =, DS = pa Gate Reverse Current I GSS T A = C na Gate Operating Current DG =, = A pa I G T A = C. na Drain-Source On-Resistance r DS(on) GS =, =. ma oltage GS DG =, = A... Forward oltage Dynamic Forward Transconductance Output Conductance Forward Transconductance Output Conductance Input Capacitance Reverse Transfer Capacitance Equivalent Input Noise oltage Matching Differential oltage GS(F) I G = ma, DS =.7 g os g os C iss C rss e n DS =, = A f=khz DS =, GS = f=khz DS =I, D = A f = MHz DS =, = A f = Hz. ms. S ms S. DG =, = A m oltage = Differential Change DG = A with Temperature T A = to C Common Mode Rejection Ratio SST pf n Hz SST /C All U CMRR DG = to, = A db Notes a. T A = C unless otherwise noted. NNR b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW s duty cycle %. S- Rev. E, -Apr-97

3 SST/U Series Typical Characteristics SS Saturation Drain Current (ma) Drain Current and Transconductance vs. Cutoff oltage DS =, GS DG =, GS = f = khz..... SS gfs Forward Transconductance (ms) I G Gate Leakage na na na pa pa pa Gate Leakage Current I = ma T A = C I C ma ma T A = C I C pa GS(off) Cutoff oltage () DG Drain-Gate oltage () GS(off) =. GS = GS(off) = GS = GS(off) =. GS = GS = GS(off) = S- Rev. E, -Apr-97

4 SST/U Series Typical Characteristics (Cont d) Transfer Characteristics GS(off) =. DS = Differential oltage DG = T A = C C C (m) GS GS SST/U U GS GS ( / C ) t oltage Differential with Temperature DG = T A = to C T A = to C SST/U U CMRR (db) Common Mode Rejection Ratio CMRR = log DG = DG GS GS Circuit oltage Gain On-Resistance A oltage Gain 9. GS(off) =. R L A R L g os Assume DD =, DS = R L.. rds(on) Drain-Source On-Resistance ( ) GS(off) =..... S- Rev. E, -Apr-97

5 SST/U Series Typical Characteristics (Cont d) Input Capacitance (pf) Ciss Input Capacitance vs. oltage f = MHz DS = Reverse Feedback Capacitance (pf) Reverse Feedback Capacitance vs. oltage f = MHz DS = C rss Output Conductance Equivalent Input Noise oltage vs. Frequency gfs Forward Transconductance ( S) GS(off) =. C T A = C C DS = f = khz en Noise oltage ( n / Hz ) DG A GS = gfs Forward Transconductance (ms) Forward Transconductance GS(off) =. C T A = C DS = f = khz C.. rds(on) Drain-Source On-Resistance ( ) k k k f Frequency (Hz) On-Resistance and Output Conductance vs. Cutoff oltage r DS r = A GS = g DG = GS = f = khz..... GS(off) Cutoff oltage () gos g Output Conductance ( S) S- Rev. E, -Apr-97

Matched N-Channel JFET Pairs

U/ Matched N-Channel JFET Pairs Part Number V GS(off) (V) V (BR)GSS Min (V) Min I G Typ (pa) V GS V GS Max (mv) U to 5.5 U to 5.5 Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: