2N3819. N-Channel JFET. Vishay Siliconix. V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I DSS Min (ma)

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1 N9 N-Channel JFET V GS(off) (V) V (BR)GSS Min (V) g fs Min I DSS Min (ma) 5 Excellent High-Frequency Gain: Gps MHz Very Low Noise: MHz Very Low Distortion High ac/dc Switch Off-Isolation High Gain: A V A Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches The N9 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at MHz. Its TO-AA (TO-9) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-AF (TO-7) and TO- (SOT-) packages, see the N/NA/SST data sheet. TO-AA (TO-9) S G D Top View Gate-Source/Gate-Drain Voltage V Forward Gate Current ma Storage Temperature to 5 C Operating Junction Temperature to 5 C Lead Temperature ( / from case for sec.) C Power Dissipation a mw Notes a. Derate. mw/ C above 5 C Document Number: 7 S Rev. D,-Jun- 7-

2 N9 Static Limits Parameter Symbol Test Conditions Min Typ a Max Unit Gate-Source Breakdown Voltage V (BR)GSS I G = A, V DS = V 5 5 Gate-Source Cutoff Voltage V GS(off) V DS = 5 V, I D = na Saturation Drain Current b I DSS V DS = 5 V, V GS = V ma V GS = 5 V, V DS = V. na Gate Reverse Current I GSS T A = C. A Gate Operating Current c I G V DG = V, I D = ma Drain Cutoff Current I D(off) V DS = V, V GS = V Drain-Source On-Resistance r DS(on) V GS = V, I D = ma 5 Gate-Source Voltage V GS V DS = 5 V, I D = A Gate-Source Forward Voltage V GS(F) I G = ma, V DS = V.7 Dynamic Common-Source Forward Transconductance c g fs VDS = 5 V Common-Source Output Conductance c V GS = V f = khz f = MHz. 5.5 V pa V ms f = khz 5 5 S Common-Source Input Capacitance C iss. Common-Source Reverse Transfer Capacitance C rss V DS = 5 V, V GS = V, f = MHz.7 Equivalent Input Noise Voltage c e n V DS = V, V GS = V, f = Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH b. Pulse test: PW s, duty cycle %. c. This parameter not registered with JEDEC. pf nv Hz Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 5 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage I DSS Saturation Drain Current (ma) g fs I DSS I V DS = 5 V, V GS = V g V DS = 5 V, V GS = V f = khz r DS(on) Drain-Source On-Resistance ( Ω ) r DS r I D = ma, V GS = V DS = V, V GS = V f = khz gos Output Conductance ( S) V GS(off) Gate-Source Cutoff Voltage (V) V GS(off) Gate-Source Cutoff Voltage (V) 7- Document Number: 7 S Rev. D,-Jun-

3 N9 I G Gate Leakage na na na pa pa pa T A = 5 C T A = 5 C Gate Leakage Current 5 ma. ma ma 5 ma. ma ma I 5 C I 5 C Common-Source Forward Transconductance vs. Drain Current 5 C V DS = V f = khz 5 C. pa V DG Drain-Gate Voltage (V). Output Characteristics 5 Output Characteristics V GS(off) = V V GS = V. V. V. V. V. V. V V GS = V. V 9. V. V.9 V. V.5 V. V V DS Drain-Source Voltage (V) V DS Drain-Source Voltage (V) Transfer Characteristics Transfer Characteristics V GS(off) = V V DS = V V DS = V 5 C 5 C 5 C 5 C Document Number: 7 S Rev. D,-Jun- 7-

4 N9 Transconductance vs. Gate-Source Voltage V GS(off) = V 5 C 5 C V DS = V f = khz Transconductance vs. Gate-Source Voltgage 5 C 5 C V DS = V f = khz On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current r DS(on) Drain-Source On-Resistance ( Ω ) V GS(off) = V V A V Voltage Gain g fs R L A V R L Assume V DD = 5 V, V DS = 5 V R L V I D V GS(off) = V V.. 5 Common-Source Input Capacitance vs. Gate-Source Voltage. Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage C iss Input Capacitance (pf) f = MHz V DS = V V DS = V f = MHz.. V DS = V. V DS = V. C rss Reverse Feedback Capacitance (pf) 7- Document Number: 7 S Rev. D,-Jun-

5 N9 T A = 5 C V DS = 5 V V GS = V Input Admittance b is T A = 5 C V DS = 5 V V GS = V Forward Admittance g is g fs b is T A = 5 C V DS = 5 V V GS = V Reverse Admittance b rs T A = 5 C V DS = 5 V V GS = V Output Admittance b os. g rs Equivalent Input Noise Voltage vs. Frequency V DS = V Output Conductance vs. Drain Current V DS = V f = khz en Noise Voltage nv / Hz I D = 5 ma Output Conductance ( S) 5 C 5 C I D = I DSS k k k f Frequency (Hz). Document Number: 7 S Rev. D,-Jun- 7-5

2N4416/2N4416A/SST4416. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION

2N4416/2N4416A/SST4416. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION N-Channel JFETs N/NA/SST PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I DSS Min (ma) N. NA. to. SST. FEATURES BENEFITS APPLICATIONS Excellent High-Frequency Gain: N/A, Gps db (typ)