2N4416/2N4416A/SST4416. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION
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1 N-Channel JFETs N/NA/SST PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I DSS Min (ma) N. NA. to. SST. FEATURES BENEFITS APPLICATIONS Excellent High-Frequency Gain: N/A, Gps db MHz Very Low Noise: db MHz Very Low Distortion High AC/DC Switch Off-Isolation Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The N/NA/SST n-channel JFETs are designed to provide high-performance amplification at high frequencies. The TO-AF (TO-7) hermetically-sealed package is available with full military processing (see Military Information.) The TO- (SOT-) package provides a low-cost option and is available with tape-and-reel options (see Packaging Information). For similar products in the TO-AA (TO-9) package, see the J/ data sheet. S TO-AF (TO-7) C TO- (SOT-) D G S D G Top View N NA Top View SST (H)* *Marking Code for TO- For applications information see AN. Document Number: 7 S-7 Rev. H, -Jan-
2 N/NA/SST ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage : (N/SST) V (NA) V Gate Current ma Lead Temperature C Storage Temperature : (N Prefix) to C (SST Prefix) to C Operating Junction Temperature to C Power Dissipation : (N Prefix) a mw (SST Prefix) b mw Notes a. Derate. mw/ C above C b. Derate. mw/ C above C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (T A = C UNLESS NOTED) Static Gate-Source Breakdown Voltage Limits N NA SST Parameter Symbol Test Conditions Typ a Min Max Min Max Min Max Unit V (BR)GSS I G = A, V DS = V Gate-Source Cutoff Voltage V GS(off) V DS = V, I D = na. Saturation Drain Current b I DSS V DS = V, V GS = V ma V GS = V, V DS = V (N) pa T A = C Gate Reverse Current I GSS V GS = V, V DS = V (SST). na T A = C. Gate Operating Current I G V DG = V, I D = ma Drain Cutoff Current c I D(off) V DS = V, V GS = V Drain-Source On-Resistance c r DS(on) V GS = V, I D = A Gate-Source Forward Voltage c V GS(F) I G = ma, V DS = V.7 V Dynamic Forward Transconductanceb g fs V DS = V, V GS = V f = khz Output Conductance b Input Capacitance Reverse Transfer Capacitance Output Capacitance V pa ms S C iss. C rss V DS = V, V GS = V f = MHz Equivalent Input V Noise Voltage c e DS = V, V GS = V n f = khz.7.. pf C oss nv Hz Document Number: 7 S-7 Rev. H, -Jan-
3 N/NA/SST HIGH-FREQUENCY SPECIFICATIONS FOR N/NA (T A = C UNLESS NOTED) Limits MHz MHz Parameter Symbol Test Conditions Min Max Min Max Unit Input Conductance d g iss, Input Susceptance d b iss,, Output Susceptance d b oss,, Output Conductance d s V DS = V, VGS = V 7 S Forward Transconductance d g fs, Power Gain d G ps V DS = V, I D = ma Noise Figure d NF R G = k Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH b. Pulse test: PW s duty cycle %. c. This parameter not registered with JEDEC. d. Not a production test. db TYPICAL CHARACTERISTICS (T A = C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage I DSS Saturation Drain Current (ma) g fs I DSS I V DS = V, V GS = V g V DS = V, V GS = V f = khz g fs Forward Transconductance r DS(on) Drain-Source On-Resistance ( Ω ) r DS r I D = A, V GS = VDS = V, V GS = V f = khz gos Output conductance (µs) V GS(off) Gate-Source Cutoff Voltage (V) V GS(off) Gate-Source Cutoff Voltage (V) V GS(off) = V V GS(off) = V V GS = V. V. V. V. V. V. V 9 V GS = V. V. V.9 V. V. V. V. V Document Number: 7 S-7 Rev. H, -Jan-
4 N/NA/SST TYPICAL CHARACTERISTICS (T A = C UNLESS OTHERWISE NOTED) V GS(off) = V V GS = V. V V GS = V V GS(off) = V. V. V. V. V. V. V.9 V. V. V. V. V. V. V Transfer Characteristics V GS(off) = V V DS = V Transfer Characteristics V GS(off) = V V DS = V C C C C g fs Forward Transconductance Transconductance vs. Gate-Source Voltage V GS(off) = V C C V DS = V f = khz g fs Forward Transconductance Transconductance vs. Gate-Source Voltgage V GS(off) = V C C V DS = V f = khz Document Number: 7 S-7 Rev. H, -Jan-
5 N/NA/SST TYPICAL CHARACTERISTICS (T A = C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current r DS(on) Drain-Source On-Resistance ( Ω ) T A = C V GS(off) = V V A V Voltage Gain g fs R L A V R L Assume V DD = V, V DS = V R L V I D V GS(off) = V V. I D Drain Current (ma). I D Drain Current (ma) Input Capacitance vs. Gate-Source Voltage Reverse Feedback Capacitance vs. Gate-Source Voltage C iss Input Capacitance (pf) f = MHz V DS = V V C rss Reverse Feedback Capacitance (pf).... f = MHz V DS = V V T A = C V DS = V V GS = V Input Admittance T A = C V DS = V V GS = V Forward Admittance b is g is g fs b fs.. Document Number: 7 S-7 Rev. H, -Jan-
6 N/NA/SST TYPICAL CHARACTERISTICS (T A = C UNLESS OTHERWISE NOTED) T A = C V DS = V V GS = V Reverse Admittance b rs Output Admittance b os. g rs. T A = C V DS = V V GS = V I G Gate Leakage en Noise Voltage nv / Hz.. na na na pa pa pa. pa T A = C T A = C Gate Leakage Current ma V DG Drain-Gate Voltage (V) Equivalent Input Noise Voltage vs. Frequency V GS = V I I D = ma. ma ma. ma ma I C I D = ma I C V DS = V Output Conductance (µs) g fs Forward Transconductance. Forward Transconductance vs. Drain Current V GS(off) = V Output Conductance vs. Drain Current V GS(off) = V C C C V DS = V f = khz C V DS = V f = khz k k k f Frequency (Hz). maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: 7 S-7 Rev. H, -Jan-
7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: -Jul-
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