U290/291. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION ABSOLUTE MAXIMUM RATINGS

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1 U9/9 N-Channel JFETs PRODUCT SUMMARY Part Number V GS(off) (V) r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) U9. to 3 U9.5 to.5 7 FEATURES BENEFITS APPLICATIONS Low On-Resistance: U9 < 3 Fast Switching t ON : ns High Off-Isolation Low Capacitance: pf Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible Off-Error, Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally On Switches Current Limiters DESCRIPTION The U9/U9 are high-performance JFET analog switches designed to offer low on-resistance and fast switching. This series features the lowest on-resistance of any JFET in the industry today. For similar products in TO-6A (TO-9) packaging, see the J5/6/7 data sheet. TheTO-6AC (TO-5) hermetically sealed case makes this series suitable for military applications. TO-6AC (TO-5) S Ordering Information: U9 E3 U9 E3 3 D G and Case Top View U9 U9 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage V Gate Current ma Storage Temperature to C Operating Junction Temperature to 5 C Power Dissipation a Notes a. Derate mw/ C above 5 C 5 mw Document Number: 735 S-39 Rev. A, 7-Jun-

2 U9/9 SPECIFICATIONS (T A = 5 C UNLESS OTHERWISE NOTED) Static U9 Limits Parameter Symbol Test Conditions Typ a Min Max Min Max Unit Gate-Source Breakdown Voltage V (BR)GSS I G = A, V DS = V Gate-Source Cutoff Voltage V GS(off) V DS = 5 V, I D = 3 na..5.5 Saturation Drain Current b I DSS V DS = V, V GS = V 5 ma Gate Reverse Current I GSS T A = 5 C. A V GS = 5 V, V DS = V. na Gate Operating Current b I G V DG = V, I D = 5 ma. V DS = 5 V, V GS = V. na Drain Cutoff Current I D(off) T A = 5 C.5 A Drain-Source On-Resistance r DS(on) V GS = V, I D = ma 3 7 Gate-Source Forward Voltage V GS(F) I G = ma, V DS = V.7 V Dynamic Common-Source Forward Transconductance b g fs Common-Source Output Conductance b V DS = V, I D = 5 ma, f = khz g os Drain-Source On-Resistance r ds(on) V GS = V, I D = ma, f = khz 3 7 Common-Source Input Capacitance C iss V DS = V, V GS = V, f = MHz 6 6 Common-Source Reverse Transfer Capacitance C rss V DS = V, V GS = 5 V, f = MHz 3 3 Equivalent Input Noise Voltage e n V DG = V, I D = 5 ma, f = khz 3 nv Hz Switching Turn-On Time Turn-Off Time 55 5 U9 t d(on) t r t d(off) VDD V =.5 V, V GS(H) = V See Switching Diagram t f 9 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NVA b. Pulse test: PW 3 s duty cycle 3%. V ms pf ns TYPICAL CHARACTERISTICS (T A = 5 C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage r I D = ma, V GS = V I V DS = V, V GS = V 6. 6 r DS I DSS..6.. I DSS Saturation Drain Current (ma) 6 On-Resistance vs. Drain Current T A = 5 C 5 V V Document Number: 735 S-39 Rev. A, 7-Jun-

3 U9/9 TYPICAL CHARACTERISTICS (T A = 5 C UNLESS OTHERWISE NOTED) On-Resistance vs. Temperature 5 Output Characteristics Switching Time (ns) I D = ma r DS changes.7%/ C T A Temperature ( C) Turn-On Switching t r approximately independent of I D V DD =.5 V, R G = 5 V GS(L) = V t r 5 V V t I D = 3 ma Switching Time (ns) V DS Drain-Source Voltage (V) Turn-Off Switching t d(off) independent of device V GS(off) V DD =.5 V, V GS(L) = V t f t d(off) V GS = V.5 V. V.5 V. V.5 V 3. V t I D = ma V GS(off) = V C (pf) Capacitance vs. Gate-Source Voltage V DS = V f = MHz C iss C rss g fs Forward Transconductance (ms) Transconductance vs. Drain Current T A = 55 C 5 C V DS = V f = khz 5 C 6 V GS Gate-Source Voltage (V) Document Number: 735 S-39 Rev. A, 7-Jun- 3

4 U9/9 TYPICAL CHARACTERISTICS (T A = 5 C UNLESS OTHERWISE NOTED) g os Output Conductance (ms) Output Conductance vs. Drain Current T A = 55 C 5 C V DS = V f = khz 5 C ) en Noise Voltage nv Hz ( V DG = V Noise Voltage vs. Frequency I D = ma. k k k f Frequency (Hz) g fs Forward Transconductance (ms) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 3 3 g fs and g V DS = V V GS = V, f = khz 6 g fs g os 6 g os Output Conductance (ms) I G Gate Leakage na na na pa pa Gate Leakage Current T A = 5 C ma I 5 C 5 ma ma T A = 5 C 5 ma I 5 C 6 pa 6 V DG Drain-Gate Voltage (V) V DD R L SWITCHING TIME TEST CIRCUIT U9 U9 V GS(L) V 7 V V GS(H) OUT R L * 5 5 I D(on) ma 7 ma * Non-Inductive Input Pulse Rise Time < ns Fall Time < ns Pulse Width ns PRF MHz Sampling Scope Rise Time. ns Input Resistance M Input Capacitance.5 pf V GS(L) V IN Scope k 5 5 Document Number: 735 S-39 Rev. A, 7-Jun-

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