Tehnička škola Kutina Ime i prezime: Laboratorijska vježba 2. POJAČALO U SPOJU ZAJEDNIČKOG EMITERA
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1 Tehnička škola Kutina Ime i prezime: Laboratorijska vježba 2. POJAČALO U SPOJU ZAJEDNIČKOG EMITERA Razred: 3E Elektronički sklopovi Ocjena: Pripremio: Ivan Josipović, ing. POJAČALO U SPOJU ZAJEDNIČKOG EMITERA Zadatak: Upoznati svojstva spoja s obzirom na strujno i naponsko pojačanje, te fazni odnos ulaznih i izlaznih signala. Ustanoviti utjecaj opterećenja na iznos naponskog pojačanja. Usvojiti osnovne postupke u primjeni instrumenata (laboratorijski izvor sinusoidalnog napona, voltmetar, osciloskop) i prikazu mjernih rezultata. 1. Teoretska obrada (priprema učenika prije izvođenja vježbe) a. Proučite tvorničke podatke tranzistora BC107(str. 5 i 6 ove vježbe) i navedite iznose dopuštenih napona UCE, struje IC te faktor strujnog pojačanja. Iz tablice upiši ovdje najvažnije parametre spomenutog tranzistora: b. Objasni rad tranzistora u spoju sa zajedničkim emiterom 1
2 Sredstva: - tranzistor BC 107 BP - otpornici, 180Ω; 1,5k Ω; 3,3kΩ; 8,2kΩ; 10kΩ - kondenzatori 47μF (2 komada); 470μF - Naponski izvor napajanja - Mjerni instrumenti - Generator sinusoidalnog napona - Osciloskop 2. Izvođenje pokusa: Izvesti u programu MULTISIM7(Electronics Workbench) slijedeću shemu, sa spojenim instrumentima za mjerenje struja baze, kolektora i emitera te napone na pojedinim točkama, generatorom sinusoidalnog napona (sinusni napon, 10m, 1kHz), a rezultate mjerenja unijeti u tablicu. UCE () UBE () URE () URC () IB (μa) IC (ma) IE (ma) 2
3 3. Naponsko pojačanje i fazni omjer ulaznog i izlaznog napona a. Izradi shemu u MULTISIM-u (Electronics Workbench) prema prethodnoj shemi b. Spojite osciloskop i promatrajte napon na ulazu i izlazu. c. Nacrtajte dijagrame ulaznog i izlaznog napona ulazni sinusni napon amplitude 10 m i frekvencije 1 khz. Ulazni signal (timebase 1 ms/div, chanel A 10 m/div) Izlazni signal (timebase 1 ms/div, chanel B 1 /Div) d. Izmjerite (izračunaj) pojačanje pojačala uz ulazni sinusni napon amplitude 10 m i frekvencije 1 khz. 3
4 4. Utjecaj amplitude ulaznog signala na djelovanje pojačala a. Povećajte amplitudu ulaznog napona na 100 m. Nacrtajte dijagrame ulaznog i izlaznog napona. Ulazni signal (timebase 1 ms/div, chanel A 100 m/div) Izlazni signal (timebase 1 ms/div, chanel B 5 /Div) b. Kakav je utjecaj amplitude ulaznog napona na oblik izlaznog napona pojačala?.. 5. Utjecaj amplitude ulaznog signala na djelovanje pojačala a. Na izlaz pojačala spojite otpor RP = 3,3 kω prema masi. Izmjerite (izračunajte) pojačanje pojačala uz ulazni sinusni napon amplitude 10 m i frekvencije 1 khz) (A-metri na AC) IIZL =. ma IB=IUL=. (μa) Pojačanje: (izračun) 4
5 Description The BC 107, BC108 and BC 109 are silicon planar epitaxial NPN transistor in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal procesing circuits of television receivers. The complementary PNP types are respectively the BC 177, BC 178 and BC 179. ABSOLUTE MAXIMUM RATINGS Symbol Parameter alue Unit BC107 BC108 BC109 CBO Collector-base oltage (I E =0) CEO Collector-emitter oltage (I B =0) EBO Emitter-base oltage(i C =0) I C Collector Current 100 ma P tot Total Power Dissipation At T amb 25 C At T case 25 C W W T stg Storage Temperature -55 to 175 C T j Junction Temperature 175 C 5
6 ELECTRICAL CHARACTERISTICS (T AMB =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Colector Cutoff CB = 15 na Current CB = T amb =150 C 15 μa (I E =0) - BC 109 CB =20 μa I CBO (BR)CBO (BR)CEO (BR)EBO Colectorbase Breakdown oltage (I E =0) Colectoremitter Breakdown oltage (I B =0) Emitter-base Breakdown oltage (I C =0) CB =20 T amb =150 C I C =10 μa I C =10 ma I E =10 μa μa CE(sat) BE BE(sat) h FE Colectoremitter Saturation oltage Base-emitter oltage Base-emitter Saturation oltage DC Current Gain I C =10 ma I C =100 ma I B =0.5 ma I B =5 ma I C =2 ma CE =5 I C =10 ma CE =5 I C =10 ma I B =0.5 ma I C =100 ma I B =5 ma I C =2 ma CE =5 Gr.A Gr.B Gr.A Gr.B Gr.C Gr.B Gr.C I C =10 μa CE =5 Gr.A Gr.B Gr.A Gr.B Gr.C Gr.B Gr.C m m m m m m 6
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,,, Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with BD646, BD648, BD650 and BD65 6.5 W at 5 C Case Temperature 8 A Continuous Collector Current Minimum h FE of 750 at
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High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical f t = 20 MHz Fully characterized at 125 o C Applications
TIP2955 PNP SILICON POWER TRANSISTOR
Designed for Complementary Use with the TIP3055 Series 90 W at 5 C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available B C SOT-93 PACKAGE (TOP VIEW) 1 E 3 Pin is
Obsolete Product(s) - Obsolete Product(s)
BUL138FP HIGH OLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE
PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistor
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Package: SOT-723 Emitter -Base Breakdown Voltage 11V High DC current gain typical 38 Low Saturation Voltage 8mv.15 continuous collector
2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -140 V Complementary to 2STC4468 Typical f t = 20 MHz Fully characterized at 125 C Applications 1 2 3 Audio power
TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS
, Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 0 C 1200 olt Blocking Capability 75 W at 25 C Case Temperature B C E TO-220 PACKAGE
2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel
Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
UNISONIC TECHNOLOGIES CO., LTD MPSA92/93
UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High
CA3045, CA3046. General Purpose NPN Transistor Arrays. Features. Description. Ordering Information. Applications. Pinout.
SEMICONDUCTOR CA4, CA46 November 996 General Purpose NPN Transistor Arrays Features Description Two Matched Transistors - V BE Match.............................. ±mv - I IO Match...........................
unit:mm 2009B Tc=25 C V V
Ordering number:enn9d PNP/NPN Epitaxial Planar Silicon Transistors SA9/SC911 16/14mA High- Switching and AF W Predriver Applications Features Adoption of FBET process. High breakdown voltage. Good linearity
DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package
STR1550. High voltage fast-switching NPN power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma
STR1550 High voltage fast-switching NPN power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape
BCR129 BCR129S BCR129W
BCR9... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω) BCR9S: Two internally isolated transistors with good matching in one
Outline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103
NPN 5A 60 Middle Power Transistor Datasheet Outline Parameter CEO I C alue 60 5A CPT3 Base Collector Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low CE(sat) CE(sat)
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 5mA. SOT-89 *Pb-free plating
MARKING: FULL PART NUMBER
2N3810 SILICON DUAL PNP TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3810 and are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted
Type Marking Pin Configuration Package BCR112 BCR112W 1=B 1=B 2=E 2=E 3=C 3=C
BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) Pbfree (RoHS compliant) package Qualified according AEC
JANS 2N5152U3 and JANS 2N5154U3
RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF These RHA level and silicon transistor devices are
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: Cob = 2.5 pf (typ.) High Transition
DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 15 2004 Oct 11 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.