ST Technologies Snapshot for Analog & Mixed Laurent Dugoujon/Thibault BRUNET STMicroelectronics
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1 ST Technologies Snapshot for Analog & Mixed Laurent Dugoujon/Thibault BRUNET STMicroelectronics 1
2 Content Main technologies/applications BCD6s/BCD6s SOI BICMOS9MW HCMOS9A C065 Space Summary Perspectives 2
3 Main technologies/applications Technologie Specificities Applications BCD High voltage High current driving Actuators driving Power stage driving / BiCMOS SiGe High Ft/Fmax Low RF losses Gsps ADCs >10 Gbit/s links Multi GHz RF / CMOS um Analog features AFEs + Dig Proc, ROICs / DSM 65-22nm High Digital density Mixed capabilities Telecom ASICs FPGAs Processors / 3
4 BCD6s General Features BCD6s BCD6s SOI Manufacturing Plant Agrate Agrate Wafer Size 8 8 Technology node Bipolar + CMOS + DMOS Bipolar + CMOS + DMOS 0.32 µm 0.32 µm Qualification Date Automotive Qual. Yes Perenity Over 10 years Same Core Supply 3.3 Volt (MOS) 5/20 Volt (NLDMOS) 5 Volt (NPN) 20 Volt (LPNP) 100 Volt (MOM) Same Digital Density 15 kgate/mm2 Same Substrate 30 to 50 Ohm.cm Mask (Baseline) 20 (incl. 3 Metals) 23 Masks (Incl. 3 Metals) Several options 8 Options MPW / MLR Yes / No Yes / No 4
5 BCD6 Design Environment OS Linux Solaris BCD6s Same Design Platform Cadence (Composer & Virtuoso) Same Transistor models Spice Same DRC LVS Calibre Same Parasitic extraction Synopsys Star RCXT Same BCD6s SOI 5
6 BCD6s Radiation Hardening Status Several Components Tested rad/s and 0.05 rad/s Intrinsic Latch Up Robustness Design new Rad-Hard Cells with Higher TID Targets Bipolar Transistors (NPN and VPNP) NMOS and NLDMOS without Leakage Design of Digital Rad-Hard Library in ST Crolles Using 65 nm DSM Rad-Hard Library Tools and Know How Dedicated Test Vehicle In Fab Design & Methodology Validation First Results : 4Q12 6
7 BCD6s Radiation Hardness Evaluated Components BCD6s CMOS Devices DMOS Devices PMOS Devices (drift & dext) Bipolars 3.3 V CMOS (Thin Gate Oxide) 20 Volt nldmos (Thin Gate Oxide) 30 Volt nldmos (Thin Gate Oxide) 45 Volt nldmos (Thin Gate Oxide) 90/100 Volt (Thin Gate Oxide) 30 Volt pmos Drift (Thin Gate Oxide) 100 Volt pmos Dext (Thin Gate Oxide) 5 Volt NPN 20 Volt LPNP 7
8 BCD6s SOI Radiation Hardnening Status 2/2 BCD6s SOI : Expectations : Better SEE Lower TID Intrinsic SEL Hardness : BOX + Lateral Trench Isolations Correlation Trials In Progress : First Results 1Q13 BCD µm Also Assessed BCD6s SOI is a Better Tradeoff for Space PROS : Radiation Hardness - Power capability CONS : Digital Integration Next Steps : Product Level TID and SEE Tests (First results : 4Q12) Characterization of Elementary Components (MOS ) 8
9 BCD6s BCD6s SOI Rad-Hard Product Developments 2 Rad-Hard Products Designed : Using Conclusions of First Assesments Integrated Current Limiter : BCD6s Silicon 2.0 Fully Validated Product Level HDR and Heavy Ion : 4Q krad LDR Results : Mid 2013 Low Side Driver : BCD6s SOI Silicon 1 Fully Validated Product Level HDR and Heavy Ion : 4Q krad LDR Results : Mid 2013 SET TC_OFF UVLO TC_OFF STATUS FCL_CFG TON TOFF I_REF ICL_ VD STATUS ISTM+ ISTM- TM HYS VCC ISNS+ ISNS- VG COMP 9
10 BCD6s SOI Perspectives BCD6s SOI Standard Design Kit : Available Mixed Signal Power Rad-Hard ASIC : Basic ASIC Offer : Under Investigation Design Kit Delivery : ST Design up to GDS2 File & test patterns : Customer Mask making, Diffusion, Test, Assembly, Qualification : ST Case by Case Basis for the Time Being ST Candidate to Build a Generic Rad-Hard ASIC Offer Digital & Analog Library Extension IP Blocks Developments. 10
11 HCMOS9A Definition N/P 20V DRIFTMOS MIM 5fF/µm² Natural capacitors Resistors P+ substrat (5-15mohm.cm) 1.2V HCMOS9 compatibility 4.8V CMOS Lmin=0.5µm ; Tox = 85 A 4 Cu ML 6V Drain extended MOS Natural NPN Extra mask needed Non volatile memory FTP / OTP High voltage diodes 11
12 HCMOS9A Device offer MOS Transistors Resistor 1.2 V NMOS Low Power (LP) Unsilicided P+ Poly 1.2 V PMOS Low Power (LP) Unsilicided N+ Active 4.8 V NMOS ANALOG NWELL GO2 85 under STI 4.8 V PMOS ANALOG RHIPO Poly in NWELL GO V Isolated Drain Extended NMOS Unsilicided RPLDD P Active 6.0 V Drain Extended PMOS Bipolar Transistor HVMOS Transistors NPN GO2 85 P DRIFT MOS HV GO2 85 N DRIFT MOS HV GO2 85 Diode Native N DRIFT MOS MV GO2 85 N+/ PWELL Junction Diode, GO1 Device Native P DRIFT MOS MV GO2 85 P+/ NWELL Junction Diode, GO1 Device HV N Junction Diode, NDRIFT/ PSUBSTRAT Capacitor HV P Junction Diode, PDRIFT/ NISO N+ Poly/ 8.5 nm oxide/ NWELL GO2 85 P+/ NWELL GO2 85 Junction Diode MOM N+/ PWELL GO2 85 Junction Diode 5 ff/ µm² MIM Schottky Diode 12
13 8.5 nm MOS 4.8V PMOS Param description Name Unit LSL SPEC USL PMOS 4.8V Ioff 10/0.5 PIL1005DH log(a/um) PMOS 4.8V Ion 10/0.5 PIS1005DH ua/um PMOS 4.8V Vth 10/0.5 PVT1005DH V PMOS 4.8V Vth 10/10 PVT1010DH V NMOS Param description Name Unit LSL SPEC USL NMOS 4.8V Ioff 10/0.5 NIL1005DH log(a/um) NMOS 4.8V Ion 10/0.5 NIS1005DH ua/um NMOS 4.8V Vth 10/0.5 NVT1005DH V NMOS 4.8V Vth 10/10 NVT1010DH V
14 HCMOS9A for Space Internally used : 5 products in Development Radiation Test : 4Q12 QMLV : 2013 On-going thesis (ST-CNES-IXL) : rad-hard design rules 14
15 BiCMOS9MW High speed self-aligned SiGe HBT f T /f max = 220/280GHz Thick copper back-end Transmission lines Inductors BiCMOS9MW 0.13µm SiGe BiCMOS technology for very high frequency applications 100Gb/s data transmission 77GHz radar 60GHz W-HDMI High speed instrumentation 0.13µm CMOS devices (HCMOS9GP) 15
16 Device list (1) Core process devices 1.2V GO1 (2nm) devices NMOS & PMOS LL transistors NMOS & PMOS HS transistors (option) 2.5V GO2 (5nm) devices NMOS & PMOS transistors NMOS & PMOS HS transistors (option) Natural drift NMOS & PMOS transistors PolyN/Nwell MOS varactor PolyN/Nwell & PolyP/Pwell MOS capacitors Diodes N+/Pwell & P+/Nwell N+/Pwell GO2 2.5V & P+/Nwell GO2 2.5V Nwell/Psub & Pwell/Niso Varactor diode Resistors N+ silicided Poly (10 /sq) N+ (120 /sq) and P+ (320 /sq) unsilicided Poly P+ unsilicided Active (135 /sq) Highly resistive Poly (1000 /sq) (option) 16
17 Device list (2) Core process devices (cont.) Bipolar devices P+/Nwell/Psub transistor N+/Pwell/Niso transistor Specific devices Bipolar devices High Speed (HS) NPN SiGe HBT (f T /f max = 220/280GHz, BV CEO = 1.6V) Medium Voltage (MV) NPN SiGe HBT (f T /f max = 145/300GHz, BV CEO = 2.0V) Inductors Low Value High Q inductor (symmetrical and differential) High Current inductor (symmetrical and differential) Capacitors MIM 2 ff/µm 2 (option) Transmission lines Microstrip line Mask count Core process: 39 (HBT=8, including SIC mask enabling free MV HBT) Options: 2 (HS G01) + 2 (HS G02) + 1 (HIPO) + 2 (MIM) 17
18 Bicmos9MW D.K. 9.2 Tools version 18
19 BICMOS9MW : Terrestrial examples 100Gb/s Ethernet 60Ghz Fast Downloading Area :5.14 mm² Area :~9 mm² VP1 VP1 VCC1 3.3 Vreg1 2.5 RFin1 RFin2 RFin3 RFin4 Area : 27mm² LDO1 LDO4 Temp sensor LOin SPI LDOD LDO3 VP2 Area:27mm² 77 Ghz Automotive Radar Chipset TESTINP TESTINN LDO2 TESTOUTP TESTOUTN VP2 VCC2 3.3 Vreg2 2.5 OUT1P OUT1N OUT2P OUT2N OUT3P OUT3N OUT4P OUT4N -Fiber optics Communications (100Gb/s) -Test & Measurements Equipment -77 Ghz Automotive radar -60Ghz LAN VP4 Vreg4 2.5 VCC4 3.3 VP4 VP4 Temp sens D CLK DATA EN RX VPD D VregD 1,2 VCCD 3.3 D VP3 VP3 Vreg3 2.5 VCC3 3.3 VP3 TX 19
20 C065 Space European High Density Technology CNES + ESA Support Library : 140 Rad-Hard Cells 1st Test Chip : Radiation Tested 2 nd Test Chip : Radiation Test Result : 4Q12 Rad-hard PLL (400MHz-1.2GHz) SRAMs generators with ECC First Space Plateform : 3Q12 Design hardening of 6.25Gbit/s HSSL on going Space platform deployment to start in Q4-12 Partnership with Atmel 20
21 Summary Technologie Space subset Status BCD BCD6s (0.32um) BCD6s SOI On going ST products ASICs considered BiCMOS SiGe:C BICMOS9MW 130nm BICMOS9 On going e2v product CMOS um HCMOS9 130nm On going ST products DSM 65-22nm C065LP (65nm) On going ASIC offer devt & deployment 21
22 Thanks for your attention! 22
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