STMicroelectronics Rad-Hard Update 2017 Space Products Working Group

Transcription

1 Rad-Hard Update 2017 Space Products Working Group April 2017 John Widder Aerospace Product Marketing

2 Aerospace Manufacturing Capacity Expansion 2 ISO CLASS 5 CLEAN ROOM Temperature: 22 C +/- 1 C Humidity: 50% +/- 5% Overpressure: 30 Pa Air renewal: 200 vol/hr 432 sq. meters of floor space 2x original ESD protection Fire suppression: sprinkler system with 360m 3 water available

3 Rad-Hard Product Update Q Discretes Logic and Interfaces Analog and Mixed Signal Power Management MOSFETS LVDS A/D Converters Linear Regulators Bipolar Transistors Bus Drivers D/A Converters PWM Controllers Schottky Diodes Level Translators Op Amps Current Limiters Bipolar Diodes ACMOS Logic Comparators Gate Drivers HCMOS Logic Voltage References CMOS4000 Logic ASIC & Technology Platforms ESCC 300 krad(si) 50 krad(si) DLA 100 krad(si) Hi-Rel In Development Legend

4 Protos: Now ESCC: Q4 17+ STTH V / 60A Rectifier 4 Key Features V RRM = 400 V Forward voltage drop A A T RR = 75 ns I FSM = 500 A I R = 200 µa max T J(max) = 175 C R th(j-c) = 1.8 C/W Radiation Performance Targets (to be confirmed) TID: up to 300 krad SEE: Up to 120 MeV.cm2/mg Test Report to be Available Upon Request 1 2 SMD1 3

5 Protos: Now ESCC: Q4 17+ New ESCC Rad-Hard Power Schottky Diode Portfolio 5 SEE assessment in progress final report will be shared V RRM(max) I O (max) V F I F (max) Package Comment 45 V 40 A 0.61 V TO254AA Common Cathode 60 A 0.68 V SMD.5 Common Cathode 60 V 30 A 0.65 V SMD.5 Common Cathode 40 A 0.74 V TO254AA Common Cathode 100 V 80 A 0.83 V SMD1 Common Cathode 120 A 0.85 V SMD1 Common Cathode 40 A 0.77 V TO254AA Common Cathode 150 V 60 A 0.91 V SMD.5 Common Cathode 80 A 0.82 V SMD1 Common Cathode 10 A 0.85 V SMD.5 Single Die 200 V 40 A 0.87 V TO254AA Common Cathode 80 A 0.93 V SMD1 Common Cathode V F values actual or simulated

6 JANS: Now JANSR+: Now New Rad-Hard Bipolar Transistor Process 6 Fabricated in ST s new high current density bipolar process higher H constant size lower V constant current faster switching good preliminary radiation test results Typical h FE > krad(si) LDR MIL-PRF-19500/773 Now NPN PNP pair in Flat-8 High linearity, tight matching Part Number Type V CEO I C I C (PEAK) h 100 ma Comment Rad Hard 2ST1360 NPN 60 V 0.8 A 4.0 A 80 F T = 130 MHz 100 krad 2ST2360 PNP -60 V 0.8 A 4.0 A 80 F T = 130 MHz 100 krad

7 FM: Now Key Features 400 Mbps (200MHz) ANSI TIA/EIA-644 compliant 3.0V 3.6V operating voltage (4.8V abs max) Cold spare all pins - fail safe Large common mode voltage: - 4V to +5V State-of-the-art skew performance Low power: 55 mw Disable pin high impedance 8kV HBM ESD protection on LVDS I/Os 130nm CMOS process (HCMOS9A) New LVDS Drivers and Receivers Radiation Performance No drift up to 150 krad (testing still ongoing) SEL C C 60 Tilt Drivers SET C Cross section C Receivers SET C Cross section C SEU-free by design 7 High performance A series and cost-effective "5 series LVDS drivers and receivers 300 krad(si)

8 FM: Now RHFLVDS32A Channel-to-Channel Skew 8 < 80ps 300 krad(si)

9 RHFLVDS32A eye diagram and jitter (DCD) 9 10ps Duty Cycle Distortion jitter on input RHFLVDS31A RHFLVDS32A Total DCD jitter (31A + 32A): 234ps 183cm (6 ft.) media length 300 krad(si)

10 FM: Now RHFLVDS217A / RHFLVDS218A LVDS Serializer & Deserializer 10 Key Features RHFLVDS channel CMOS to 3-channel LVDS serializer RHFLVDS218 3-channel LVDS to 21-channel CMOS deserializer 75 MHz clock Gbps equivalent data rate 130nm CMOS process (HCMOS9A) Radiation Performance 21x CMOS RHFLVDS217 Serializer 3x LVDS 3x LVDS RHFLVDS218 Deserializer 21x CMOS 300 krad(si) ELDRS free SEL C SET minimized by design & layout Flat krad(si)

11 FM: Now RHRPM4424 Dual Rad-Hard MOSFET Gate Driver 11 Key Features Up to 8A source / 9A sink capability Fast rise & fall times: 30 ns typ Propagation delay: 110 ns typ ± 5ns matching delay V OL = 20 Iout = 1 ma Wide operating voltage: 4.65V to 18V Low power: 1.8mA max Icc Separate power & signal grounds Undervoltage lockout protection Power dissipation: up to 70 C BCD6 SOI process -55 C to +150 C (125 C recommended) Radiation Performance 100 krad(si) ELDRS free (tbc) SEL free at C Cross Section 10-7 cm2 SET Cross Section : C Report Available upon request RHRPM4423 inverting version now sampling Flat-10 and Flat-16P Packages 100 krad(si)

12 FM: Now RHRPM4424 Dual Rad-Hard MOSFET Gate Driver 12 Perfectly symmetric layout Low, tightly matched propagation delays accurate synchronization in parallel mode no channel-to-channel skew very low channel-to-channel Δt r / t f : 1ns typical 3ns max RHFPM4424 t SK matching between propagation delays of the two channels 100 krad(si)

13 FM: Now RHRPM4424 Dual Rad-Hard MOSFET Gate Driver Tight matching of rise & fall times between channels 13 RHFPM4424 t R output rise time: 31.0ns RHFPM4424 t F output fall time: 31.4ns 100 krad(si)

14 FM: Now RHRPM4424 Dual Rad-Hard MOSFET Gate Driver 14 Undervoltage lockout (UVLO) Insures safe operation during power on and power off Outputs grounded when Vcc is below V th(off) Pre-rad: V th(on) = 4.3V; V th(off) = 4.0 V 100 krad: up to 0.35V drift Ground bounce tolerant Separate signal and power grounds Up to +/- 5V input/output common mode voltage Insures proper operation during load discharges P-channel / N-channel DMOS outputs High peak current capability: up to 4.5A per channel / 9A in parallel Low R DS(on) : 1.4Ω source / 2.0Ω sink Adaptive anti-cross conduction helps eliminate shoot-thru current Separate source and sink pins allow separate adjustment of turn-on & turn-off characteristics 100 krad(si)

15 GBP (MHz) RHF310 RHF350 Stability Gain: 2 Supply voltage: 5V Noise: 7.5nV/ Hz -60 ma < Iout < 70 ma Stability Gain: 1 Supply voltage: 5V Noise: 1.5nV/ Hz -200 < Iout < 210 ma Rad-Hard High Performance BiCMOS Amplifiers Stability Gain: 2 Supply: 5V Noise: 1.3nV/ Hz -320 < Iout < 360 ma RHF330 RH-20x High Input Impedance Supply voltage: 5V Slew rate: 550 V/µs Settling time: 13ns Total Noise: 10nV/ Hz RHR6x RHF484 RHF43B Stability Gain: 5 VCC: 3V to 16V (RHF43B) 4V to 14V (RHF484) Noise: 7.5 nv/ Hz -10 ma < Iout < 15 ma Stability Gain: 1 Supply voltage: 1.5V to 5.5V Offset: 3 mv / 1 pa typ Input Bias: 1 pa typ LEGEND Low Power Precision - Rail to Rail In & Out Precision - Rail to Rail Output High Speed Differential Controlled Offset Icc ma / 300 krad(si) SEL free

16 FM: Now RHF330 Rad-Hard High Speed Op Amp 16 Key Features +2.5V (or 0/5V) Vcc: 4.5V to 5.5V Wide bandwidth: 1.0 Gain=2 Low power: Icc =16mA -320mA < Iout < 360 ma min in + - out 100W Slew Rate: 1800V/µs Voltage noise: 1.3nV/ Hz Macro models : Bol, EoL, EoR 300W 300W -2.5V Matching Line Impedance BiCMOS7 : 0.25µm (Crolles) Radiation Performance 300 krad(si) LDR & HDR - ELDRS Free No C SET : Low Amplitude - Low Duration Tested in Inverting - Non Inverting - Subtracting Modes Saturated Cross Section : cm2/dev LET Threshold : 18 MeV.cm2/mg (Subtracting : 1 MeV.cm2/mg)) Flat-8 and Flat-8S 300 krad(si)

17 FM: Now RHR61 / RHR64 Rad-Hard Precision Low Power Rail-to-Rail Op Amps 17 Key Features -Vcc to +Vcc: 1.5V to 5.0V GBP: 700 KHz Rail-to-rail inputs and outputs Unity-gain stable with capacitive load Very low power: 60µA Low input offset voltage : 3mV max Ultra-low input bias current:1pa Wide common mode voltage range 100 mv below Vcc to 100mV above +Vcc 0.25µm BiCMOS process (BICMOS7) Radiation Performance 100 krad(si) SEL free ELDRS Free SEL & SEU 125 C Design & layout to minimize SET LET threshold: 10.2 MeV.cm2/mg Saturated cross section: cm2 RHR61 Ceramic Flat-8 Bare Die RHR64 Ceramic Flat-14W Bare Die 100 krad(si)

18 FM: Q2 17 RHF200 Rad-Hard 420MHz Differential Amplifier 18 Target Specifications Single / Differential to Differential 420 MHz unity-gain stable Setting Time: 13 ns Internal gain settings: 1.0, 1.33, 2.0, 4.0 V/V Operating voltage: 4.5V to 5.5V Common mode reconstruction High input impedance Spurious-free dynamic range > 100 db Icc: 21 ma 150 MHz / 5.0V 0.25µm BiCMOS process (BICMOS7) Radiation Performance RHF200 (No Standby) : 300 krad(si) ELDRS Free SEL & SEU 125 C Design & Layout to Minimize SET (configuration dependent) Saturated Cross Section : MeV Duration : < 400ns Flat krad(si) ELDRS Free

19 FM: Q3 17 RHRDAC bit Delta-Sigma DAC 19 Key Features 95dB SNR 3kHz SPI Input 24 bit register - Internal clock: 12kHz Master clock: 2.4MHz to 3.6MHz Operating voltages: 3.3V digital / 3.3V analog Total quiescent current: 5mA typ. Filtered analog voltage output External current reference setting 130nm CMOS process (HCMOS9A) Radiation Performance 100 krad(si) TID SEL C SEU and SET Reports Dedicated AN to be Written Saturated Cross Section : MeV.cm2/mg - Flat krad(si)

20 The Broadest Offering of Rad-Hard Logic 21 54AC, 54ACT series logic (RHFACxxx, RHFACTxxx) 63 logic functions 300 krad TID at any Mil1019 dose rates SEL-SET immune to 119 MeV.mg/cm2 LET 125 C qualified VCX 3V series logic (RHFXH16xxx) Six logic functions 300 krad (Si) at any Mil1019 dose rate SEL, SET, and SEU immune to 110 MeV.cm2/mg LET ions qualified M54HCxxx, M54HCTxxx series logic 78 logic functions 50 krad (Si) SEL immune up to 110 MeV/mg/cm² ESCC qualified HCC40xxx series logic 70 logic functions 100kRad TID at 11rad/sec dose rate SEL Immune to 119 MeV.mg/cm2 LET 125 C SET Immune to 119 MeV.mg/cm2 LET 25 C SEU Immune to 16 / 53 / 115 MeV.mg/cm2 LET 25 C ESCC qualified

21 Option 1: Upscreen of Qualified ESCC Parts: ESCC Flow + Test + Documentation 100% high & low temperature test 100% AC Test CoC + complete data pack + RVT Limited upscreen - fixed charge ESCC Logic Options for the US Market 22 Option 2: Similar To Class S Manufacturing & Documentation Similar To Class S Specification: ESCC + cover sheet Same test conditions as class S (HCC : 20 Volt ) No ESA logo CoC - complete data pack including group B & D RVT Specific screening cost see TN0985 for details

22 FM: Now RHF1201 Rad-hard 12-bit, 50 Msps Pipelined ADC Wide sampling Range : 0.5 to 50Msps Input range : 2 Vpp differential 2.5V / 3.3V Compatible Digital I/O Differential Nonlinearity: +/-0.5 LSB Low Power Consumption: 0.5Msps - 50Msps 75dB Fs = 50Msps Internal / External Vref Radiation Performance 300 krad(si) TID SEFI & SEL 125 C for LET 110 MeV-cm2/mg Rad-Hard High Speed A/D Converters RHF1401 Rad-hard 14-bit, 20 Msps Pipelined ADC 2V PP differential input range 2.5V / 3.3V compatible digital I/O Tri-state output available +/-0.3 LSB differential nonlinearity 130 MHz sample & hold effective bandwidth Low power: 20Msps 90dB f S = 20Msps, f IN = 5MHz Internal or external reference voltage Radiation Performance 300 krad(si) TID SEFI & SEL Free up to V & 125 C 23 Ceramic SO-48 Ceramic SO krad(si)

23 FM: Now RHF100 High Accuracy Fixed Voltage Reference Output voltage: 1.2V ± 0.15% min. Cathode current: 40µA Temperature coefficient: 5ppm/ C typ, 15ppm/ C max SPICE model on st.com Process: 0.25µm BICMOS Flat-10 package with gold or solder dip lead finish Eval board available Radiation Performance 300 krad (Si) Enhanced Low Dose Rate Sensitivity (ELDRS) free SEL C SET: Report available upon request Rad-Hard Voltage References RHF1009A High Accuracy Adjustable Voltage Reference Vout = 2.5V to 5.5V, 0.1% min. I k(min) = 40µA Temperature coefficient: 10ppm/ C typ, 30ppm/ C max SPICE model available on st.com 0.25µm BiCMOS Flat-10 package with gold or solder dip lead finish Eval board available Radiation Performance 300 krad (Si) Enhanced Low Dose Rate Sensitivity (ELDRS) free SEL C SET: Report available upon request 24 Flat-10 Flat krad(si)

24 FM: Now Rad-Hard Low Dropout Voltage Regulators 25 Thermal Shutdown T J 165 to 175 C Adjustable overcurrent protection RHFL4913xxy RHFL7913A RHFL6000A V IN 3.0V to 12.0V -3.0V to -12V 2.5V to 12V I OUT 3.0 A -3.0 A 2.0 A Remote current sensing Inhibit pin (TTL compatible) Remains in pre-rad spec after 300krad(Si) ELDRS MIL 1019 SPICE models available for both positive & negative versions V OUT Adjustable output voltage: 1.23V to 9.0V Fixed Output Voltages: 1.5V 2.5V 3.3V 5.0V V DROP 0.4A 2 A I I O = 1A 20mA typ, 40 ma max Adjustable output voltage: -1.23V to -9.0V 0.4A 2A 60mA max Engineering & Flight Models Available I Q(OFF) 1 ma max 1 ma max 1mA max Packages Flat-16 TO-257 SMD-5C SMD.5 Bare Die Flat-16 SMD5-C Flat-16 SMD 5962F0253x 5962F F krad(si)

25 FM: Now RHFL6000A Next-Generation Low Dropout Voltage Regulator 26 Key Features Vin: 2.5V to 12V Vout: 1.2V min Iout: 2A max Low Drop: 0.28 V 0.4A Over Temperature Over Current Protection Adjustable Short Circuit Protection Accessible Control Loop Inhibit Pin: 35 µa max shutdown HF2CMOSRH: Same as RHFL4913 Best-in-Class Radiation Performance 300 krad(si) ELDRS free SEL C SET < 3% up to 12 Volt / 300 ma & < 3.3% up to 1 A SMD : 5962F15216 Flat-16 With grounded lid 300 krad(si)

26 For More Information 27 John Widder Aerospace Product Marketing, Inc. Austin, Texas Tel: (360)

27 28 28

28 29