Reference SMD pin Quality level Temp range Package. RHF484K-01V 5962F08222 Flight model -

Transcription

1 Rad-hard precision quad operational amplifier Features High radiation immunity: 3 krad TID at high dose rate ELDRS-free up to 1 krad 3 krad low dose rate on-going SEL immune at LET = 12 Me.cm²/mg at 125 C SET characterized Hermetic package Rail-to-rail input/output 8 MHz gain bandwidth product Low input offset voltage: 6 µ typ Supply current: 2.2 ma typ per amplifier Operating from 4 to 14 Input bias current: 6 na typ QLM- qualified under smd Applications Space probes and satellites Harsh environment Description The RHF484 is a rail-to-rail precision bipolar quad operational amplifier featuring a low input offset voltage and a wide supply voltage. Ceramic Flat-14W Pin connections (top view) The upper metallic lid is not electrically connected to any pins, nor to the IC die inside the package Designed to increase tolerance to radiation, the RHF484 is housed in a hermetic 14-pin flat package, making it an ideal product for space applications and harsh environments. Table 1. Device summary Reference SMD pin Quality level Temp range Package Lead finish Mass EPPL RHF484K1 Engineering model -55 C to +125 C Flat-14 W Gold.7 g - RHF484K F8222 Flight model - Note: Contact your ST sales office for information on specific conditions for products in die form. April 211 Doc ID Rev 1 1/

2 Absolute maximum ratings and operating conditions RHF484 1 Absolute maximum ratings and operating conditions Table 2. Absolute maximum ratings Symbol Parameter alue Unit CC Supply voltage (+ CC )-(- CC ) 18 id Differential input voltage (1) ±1.2 in Input voltage (2)(3) - CC -.3 to + CC +.3 I in Input current 45 ma T stg Storage temperature range -65 to +15 C T j Maximum junction temperature 15 C Thermal resistance junction to ambient (4) R thja TBD C/W Flat package, 14 pins Thermal resistance junction to case (4) R thjc Flat package, 14 pins ESD HBM: human body model (5) 1. The differential voltage is the voltage difference between the pins +IN and -IN of a channel. 2. All voltage values, except differential voltage are with respect to network ground terminal. 3. The voltage on either input must never exceed + CC +.3 nor Short-circuits can cause excessive heating and destructive dissipation. alues are typical. 5. Human body model: a 1 pf capacitor is charged to the specified voltage, then discharged through a 1.5 kω resistor between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating. TBD C/W 2 k T Lead Lead temperature (soldering, 1 sec) 26 C Radiation informations Dose Heavy ions Table 3. Low dose rate of.1 rad.sec -1 1 krad High dose rate of 5-3 rad.sec -1 3 krad SEL immunity (at 125 C) 12 Me.cm 2 /mg SET characterized Operating conditions Symbol Parameter alue Unit (+ CC )-(- CC ) Supply voltage 4 to 14 (1) icm Common-mode input voltage range - CC to + CC T oper Operating free-air temperature range -55 to +125 C 1. SEL-free, up to 12 Me.cm²/mg. 2/18 Doc ID Rev 1

3 Electrical characteristics 2 Electrical characteristics Table 4. + CC = 7, - CC = 7, icm =, T amb = 25 C, loads (R L,C L ) connected to GND (unless otherwise specified) Symbol Parameter Test conditions Temp. Min. Typ. Max. Unit DC performance io Offset voltage icm = +7 icm = + icm = C C C 7-55 C C C 5-55 C C C 7 D io Input offset voltage drift No load 1 µ/ C I ib Input bias current No load -55 C C C 1 DI ib Input offset current temp. drift No load 1 pa/ C µ na I io C in Input offset current Differential input capacitance between +IN and -IN Input capacitance between +IN (or -IN) and GND No load out = I CC Supply current per amplifier No load CMR Common mode rejection ratio SR Supply rejection ratio No load - CC < icm < + CC No load From + CC = 2 and - CC = -2 to + CC = 7 and - CC = C C C C C 2-55 C C C C C C C C C 8 na pf ma db db Doc ID Rev 1 3/18

4 Electrical characteristics RHF484 Table 4. AC performance out = 2 mpp -55 C 3.5 GBP Gain bandwidth product f = 1 khz R L =1 kω, +25 C 6 8 MHz C L = 1 pf +125 C 3.5 F u Unity gain frequency R L = 1 kω, C L = 1 pf +25 C 5 MHz φm A D SR + CC = 7, - CC = 7, icm =, T amb = 25 C, loads (R L,C L ) connected to GND (unless otherwise specified) (continued) Symbol Parameter Test conditions Temp. Min. Typ. Max. Unit Phase margin Large signal voltage gain Slew rate R L = 1 kω, C L = 1 pf G = +5 R L = 1 kω out = -6.5 to 6 R L = 1 kω out = -4.8 to 4.8 out = 4.8 to C 5 Degrees -55 C C C 6-55 C C C 1.7 db /µs e n Equivalent input noise voltage No load, f = 1kHz +25 C 7 i n Equivalent input noise current No load, f = 1 khz +25 C.8 n Hz pa Hz THD+e n Total harmonic distortion + noise Output characteristics out = 13 pp, R L = 1 kω, C L = 1 pf G = C.1 % OH High level output voltage + CC =14, - CC = R L =1 kω + CC =14, - CC = R L = 1 kω -55 C C C C C C 13.6 OL Low level output voltage + CC =14, - CC = R L =1 kω + CC =14, - CC = R L = 1 kω -55 C C C.3-55 C C C.2 4/18 Doc ID Rev 1

5 Electrical characteristics Table 4. + CC = 7, - CC = 7, icm =, T amb = 25 C, loads (R L,C L ) connected to GND (unless otherwise specified) (continued) Symbol Parameter Test conditions Temp. Min. Typ. Max. Unit -55 C 15 I out (1) Output sink current out = + CC No load, id = C C C 1 ma Output source current out = - CC No load, id = C C 1 ma 1. These tests are performed during a very short period of time. Excessive heating can damage the device. In the application, the junction temperature must never exceed 15 C as specified in Table 2. Doc ID Rev 1 5/18

6 Electrical characteristics RHF484 Table 5. + CC = +2, - CC = -2, icm =, T amb = 25 C, loads (R L,C L ) connected to GND (unless otherwise specified) Symbol Parameter Test conditions Temp. Min. Typ. Max. Unit DC performance io Offset voltage icm = +2 icm = + icm = C C C 7-55 C C C 5-55 C C C 7 D io Input offset voltage drift No load 1 µ/ C I ib Input bias current No load -55 C C C 1 DI ib Input offset current temp. drift No load 1 pa/ C µ na I io C in Input offset current Differential input capacitance between +IN and -IN Input capacitance between +IN (or -IN) and GND No load out = I CC Supply current per amplifier No load CMR Common mode rejection ratio No load - CC < icm < + CC -55 C C C C C 2-55 C C C C C C 72 na pf ma db 6/18 Doc ID Rev 1

7 Electrical characteristics Table 5. AC performance out = 2 mpp -55 C 3.5 GBP Gain bandwidth product f = 1 khz R L =1 kω, +25 C 6 8 MHz C L = 1 pf +125 C 3.5 F u Unity gain frequency R L =1 kω, C L = 1 pf +25 C 5 MHz φm A D SR + CC = +2, - CC = -2, icm =, T amb = 25 C, loads (R L,C L ) connected to GND (unless otherwise specified) (continued) Symbol Parameter Test conditions Temp. Min. Typ. Max. Unit Phase margin Large signal voltage gain Slew rate R L =1 kω, C L = 1 pf G = +5 R L = 1 kω out = -1.5 to.5 R L = 1 kω out = to 1.28 out = 1.28 to C 5 Degrees -55 C C C 6-55 C C C 1.7 db /µs e n Equivalent input noise voltage No load, f = 1 khz +25 C 7.5 i n Equivalent input noise current No load, f = 1 khz +25 C.8 n Hz pa Hz THD+e n Total harmonic distortion + noise Output characteristics out = 3 pp, R L = 1 kω, C L = 1 pf G = C.1 % OH High level output voltage + CC = 4, - CC = R L =1 kω + CC = 4, - CC = R L = 1 kω -55 C C C C C C 3.75 OL Low level output voltage + CC = 4, - CC = R L =1 kω + CC = 4, - CC = R L = 1 kω -55 C C C.2-55 C C C.1 Doc ID Rev 1 7/18

8 Electrical characteristics RHF484 Table 5. + CC = +2, - CC = -2, icm =, T amb = 25 C, loads (R L,C L ) connected to GND (unless otherwise specified) (continued) Symbol Parameter Test conditions Temp. Min. Typ. Max. Unit I out (1) Output sink current Output source current out = + CC No load id = -1 out = - CC No load id = C C C C C C 1 ma ma 1. These tests are performed during a very short period of time. Excessive heating can damage the device. In the application, the junction temperature must never exceed 15 C as specified in Table 2. 8/18 Doc ID Rev 1

9 Electrical characteristics Figure 1. Input offset voltage distribution Figure 2. Input bias current vs. supply voltage Population % io distribution cc=14, icm= Input offset voltage (u) Input bias current (na) icm = cc /2 Follower configuration Supply voltage () Figure 3. Input bias current vs. icm at CC =4 Figure 4. Input bias current vs. icm at CC = Input bias current (μa) T= +125 C T= +25 C T= -55 C -cc = -2 +cc = +2 Input bias current (μa) T= +125 C T= +25 C T= -55 C -cc = -7 +cc = Input Common Mode oltage () Input Common Mode oltage () Figure 5. Supply current vs. icm in follower configuration at CC =4 Figure 6. Supply current vs. icm in follower configuration at CC = Supply current per channel (ma) Follower configuration -cc=-2 +cc= Input Common Mode oltage () Supply current per channel (ma) Follower configuration -cc=-7 +cc= Input Common Mode oltage () Doc ID Rev 1 9/18

10 Electrical characteristics RHF484 Figure 7. Supply current vs. supply voltage at icm = CC /2 Figure 8. Output current vs. supply voltage at icm = CC /2 Supply current per channel (ma) icm=cc/ Supply voltage () Output Current (ma) Sink id = -1-5 icm=cc/ Source -2 id = Supply voltage () Figure 9. Output current vs. output voltage at CC = 4 Figure 1. Output current vs. output voltage at CC = 14 Output Current (ma) cc=2 -cc=-2 Sink -4 Source Output oltage () Output Current (ma) cc=-7 +cc=+7 Sink -4 Source Output oltage () Figure 11. Differential input voltage vs. output voltage at CC =4 Figure 12. Differential input voltage vs. output voltage at CC = Differential input voltage (m) cc=-2 +cc=+2 Differential input voltage (m) cc=-7 +cc= Output voltage () Output voltage () 1/18 Doc ID Rev 1

11 Electrical characteristics Figure 13. Noise vs. frequency at CC = 4 and CC = 14 Figure 14. oltage gain and phase vs. frequency at CC = 4, icm = Input equivalent noise density (n/hz) 1 cc=14, icm=7, Tamb=25 C cc=4, icm=2, Tamb=25 C Gain (db) Phase Gain cc=4, icm=2, G= -1 Rl=1kOhms, Cl=1pF, rl=cc/2 Tamb=25 C Phase ( ) Frequency (Hz) Frequency (Hz) -18 Figure 15. oltage gain and phase vs. Figure 16. frequency at CC = 4, icm = 3.5 oltage gain and phase vs. frequency at CC = 4, icm = Phase Gain Phase Gain Gain (db) Phase ( ) Gain (db) Phase ( ) cc=4, icm=3.5, G= -1 Rl=1kOhms, Cl=1pF, rl=cc/2 Tamb=25 C cc=4, icm=.5, G= -1 Rl=1kOhms, Cl=1pF, rl=cc/2 Tamb=25 C Frequency (Hz) Frequency (Hz) Figure 17. oltage gain and phase vs. frequency at CC = 14, icm = 7 Figure 18. oltage gain and phase vs. frequency at CC = 14, icm = Phase Gain Phase Gain Gain (db) Phase ( ) Gain (db) Phase ( ) cc=14, icm=7, G= -1 Rl=1kOhms, Cl=1pF, rl=cc/2 Tamb=25 C cc=14, icm=13.5, G= -1 Rl=1kOhms, Cl=1pF, rl=cc/2 Tamb=25 C Frequency (Hz) Frequency (Hz) Doc ID Rev 1 11/18

12 Electrical characteristics RHF484 Figure 19. oltage gain and phase vs. frequency at CC = 14, icm =.5 Figure 2. Positive slew rate at CC = 4 Gain (db) Phase Gain cc=14, icm=.5, G= -1 Rl=1kOhms, Cl=1pF, rl=cc/2 Tamb=25 C Frequency (Hz) Phase ( ) Output oltage ()) cc=4, in=2pp, G= Time (µs) Figure 21. Negative slew rate at CC = 4 Figure 22. Positive slew rate at CC = Output oltage ()) cc=4, in=2pp, G= -5.1 Output oltage ()) cc=14, in=4pp, G= Time (µs) Time (µs) Figure 23. Negative slew rate at CC = Output oltage ()) cc=14, in=4pp, G= Time (µs) 12/18 Doc ID Rev 1

13 Achieving good stability at low gain 3 Achieving good stability at low gain At low frequencies, the RHF484 can be used in a low gain configuration as shown in Figure 24. At lower frequencies, the stability is not affected by the value of the gain, which can be set close to 1 / ( db), and is reduced to its simplest expression G1=1+Rfb/Rg. Therefore, an R-C cell is added in the gain network so that the gain is increased (up to 5) at higher frequencies (where the stability of the amplifier could be affected). At higher frequencies, the gain becomes G2=1+Rfb/(Rg//R). Figure 24. Low gain configuration Figure 25. Closed-loop gain Rg becomes a complex impedance. The closed-loop gain features a variation in frequency and can be expressed as: G1R + Rfb 1 + jcω G1 Gain = G jcrω where a pole appears at 1/2πRC and a zero at G1/2π(G1R+Rfb)C. The frequency can be plotted as shown in Figure 25. Table 6. External components versus low-frequency gain G1 (/) R (Ω) C (nf) Rg (Ω) Rfb (Ω) k 2k k 2k k 2k k 5 Not connected Not connected k Doc ID Rev 1 13/18

14 Package information RHF484 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 14/18 Doc ID Rev 1

15 Package information Figure 26. Wide ceramic Flat-14 package mechanical drawing. Note: The upper metallic lid is not electrically connected to any pins, nor to the IC die inside the package. Connecting unused pins or metal lid to ground or cc will not affect the electrical characteristics. Table 7. Ref. Wide ceramic Flat-14 W package mechanical data Millimeters Dimensions inches Min. Typ. Max. Min. Typ. Max. A b c D E E E e L Q S Doc ID Rev 1 15/18

16 Ordering information RHF484 5 Ordering information Table 8. Order codes Order code Description Temperature range Package Marking RHF484K1 Engineering Samples RHF484K1-55 C to +125 C Flat-14 W RHF484K-1 Flight Models 5962F82221XC Note: Contact your ST sales office for information on specific conditions for products in die form. 16/18 Doc ID Rev 1

17 Revision history 6 Revision history Table 9. Document revision history Date Revision Changes 26-Apr Initial release. Doc ID Rev 1 17/18

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