TS27M4C, TS27M4I, TS27M4M
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1 Precision low power CMOS quad operational amplifiers Features Low power consumption: 50 µa/op Output voltage can swing to ground Excellent phase margin on capacitive loads Unity gain stable Two input offset voltage selections Description These devices are low cost, low power quad operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process allowing an excellent consumption-speed ratio. These series are ideally suited for low consumption applications. Three power consumptions are available thus offering the best consumption-speed ratio for your application: I = 0 µa/amp: TS27L4 (very low power) I = 50 µa/amp: TS27M4 (low power) I = ma/amp: TS274 (standard) These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see Figure 4 on page 7). DIP4 (Plastic package) SO4 (Plastic micropackage) TSSOP4 (Thin shrink small outline package) Output Inverting Input 2 Non-inverting Input 3 Non-inverting Input 2 Inverting Input 2 Pin connections (top view) Output Output 4 Inverting Input 4 Non-inverting Input 4 Non-inverting Input 3 Inverting Input 3 Output 3 September 2008 Rev 2 /4 4
2 Circuit schematics TS27M4C, TS27M4I, TS27M4M Circuit schematics Figure. Block diagram Current source x I Input differential Second stage Output stage Output E E 2/4
3 Circuit schematics Figure 2. Schematic diagram (for /4 TS27M4) T 24 T 25 R 2 T7 8 T T9 T 20 T 2 T26 T 23 T 22 T27 T28 T29 Input T5 T T2 T 3 T4 Input C R T6 T7 T0 T8 T T2 T9 T3 T4 T5 Output T6 3/4
4 Absolute maximum ratings and operating conditions TS27M4C, TS27M4I, TS27M4M 2 Absolute maximum ratings and operating conditions Table. Absolute maximum ratings (AMR) Symbol Parameter TS27M4C/AC TS27M4I/AI TS27M4M/AM Unit + Supply voltage () 8 id Differential input voltage (2) ±8 in Input voltage (3) -0.3 to 8 I o Output current for + 5 ±30 ma I in Input current ±5 ma T oper Operating free-air temperature range 0 to to to +25 C T stg Storage temperature range -65 to +50 C R thja Thermal resistance junction to ambient (4) SO-4 TSSOP4 DIP C/W R thjc (4) Thermal resistance junction to case SO-4 TSSOP4 DIP C/W HBM: human body model (5) k ESD MM: machine model (6) 00 CDM: charged device model (7).5 k. All values, except differential voltage are with respect to network ground terminal. 2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage. 4. Short-circuits can cause excessive heating and destructive dissipation. alues are typical. 5. Human body model: a 00 pf capacitor is charged to the specified voltage, then discharged through a.5kω resistor between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating. 6. Machine model: a 200 pf capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5Ω). This is done for all couples of connected pin combinations while the other pins are floating. 7. Charged device model: all pins and the package are charged together to the specified voltage and then discharged directly to the ground through only one pin. This is done for all pins. Table 2. Operating conditions Symbol Parameter alue Unit + Supply voltage 3 to 6 icm Common mode input voltage range 0 to /4
5 Electrical characteristics 3 Electrical characteristics Table 3. Symbol + = +0, - = 0, T amb = +25 C (unless otherwise specified) Parameter TS27M4C/AC TS27M4I/AI TS27M4M/AM Min. Typ. Max. Min. Typ. Max. Unit io Input offset voltage O =.4, ic = 0 TS27M4C/I/M TS27M4AC/AI/AM T min T amb T max TS27M4C/I/M TS27M4AC/AI/AM D io Input offset voltage drift 2 2 µ/ C I io Input offset current note () ic = 5, O = 5 T min T amb T max I ib Input bias current () ic = 5, O = 5 T min T amb T max OH OL A vd GBP CMR SR I I o I sink SR High level output voltage id = 00m, R L = 00kΩ 8.7 T min T amb T max 8.6 Low level output voltage id = -00m Large signal voltage gain ic = 5, R L = 00kΩ, o = to 6 30 T min T amb T max 20 Gain bandwidth product A v = 40dB, R L = 00kΩ, C L = 00pF, f in = 00kHz Common mode rejection ratio ic = to 7.4, o =.4 Supply voltage rejection ratio + = 5 to 0, o = m pa pa m Supply current (per amplifier) A v =, no load, o = T min T amb T max 250 Output short-circuit current o = 0, id = 00m Output sink current o =, id = -00m Slew rate at unity gain R L = 00kΩ, C L = 00pF, i = 3 to 7 50 /m MHz db db µa ma ma /µs 5/4
6 Electrical characteristics TS27M4C, TS27M4I, TS27M4M Table 3. Symbol + = +0, - = 0, T amb = +25 C (unless otherwise specified) (continued) Parameter TS27M4C/AC TS27M4I/AI TS27M4M/AM Min. Typ. Max. Min. Typ. Max. Unit φm Phase margin at unity gain A v = 40dB, R L = 00kΩ, C L = 00pF Degrees K O Overshoot factor % e n Equivalent input noise voltage n f = khz, R s = 00Ω Hz o / o2 Channel separation db. Maximum values include unavoidable inaccuracies of the industrial tests. 6/4
7 Electrical characteristics Figure 3. Supply current (each amplifier) versus supply voltage Figure 4. Input bias current versus free air temperature SUPPLY CURRENT, I ( μ A) AMB O T = 25 C A = = / SUPPLY OLTAGE, () INPUT BIAS CURRENT, I IB (pa) 00 0 = 0 i = TEMPERATURE, T ( C) AMB Figure 5. High level output voltage versus high level output current Figure 6. High level output voltage versus high level output current OUTPUT OLTAGE, OH () T AMB ID = 25 C = 00m = 5 = 3 OUTPUT OLTAGE, OH () T AMB ID = 25 C = 00m = 6 = OUTPUT CURRENT, I OH (ma) OUTPUT CURRENT, I OH (ma) Figure 7. Low level output voltage versus low level output current Figure 8. Low level output voltage versus low level output current OUTPUT OLTAGE, OL () = 3 T AMB i ID = - = 5 = 25 C = 0.5 OUTPUT OLTAGE, OL () 3 2 = 0 = 6 T AMB = 25 C = 0.5 i ID = OUTPUT CURRENT, I OL (ma) OUTPUT CURRENT, I (ma) OL 7/4
8 Electrical characteristics TS27M4C, TS27M4I, TS27M4M Figure 9. Open loop frequency response and phase shift Figure 0. Gain bandwidth product versus supply voltage GAIN (db) T amb = 25 C + = 0 R L = 00k Ω C L = 00pF A = 00 CL PHASE GAIN Gain Bandwidth Product Phase Margin FREQUENCY, f (Hz) PHASE (Degrees) GAIN BANDW. PROD., GBP (khz) T R amb L = 25 C = 00kΩ C L = 00pF A = SUPPLY OLTAGE, () Figure. Phase margin versus supply voltage Figure 2. Phase margin versus capacitive load PHASE MARGIN, φ m (Degrees) T amb = 25 C R L = 00kΩ C L = 00pF A = SUPPLY OLTAGE, () PHASE MARGIN, φ m (Degrees) T amb= 25 C R L = 00kΩ A = = CAPACITANCE, C L (pf) Figure 3. Slew rate versus supply voltage Figure 4. Input voltage noise versus frequency SLEW RATES, SR (/ μs) T amb = 25 C R = 00kΩ L C = 00pF L SR SR EQUIALENT INPUT NOISE OLTAGE (n/hz) T amb R S = 0 = 25 C = 00Ω SUPPLY OLTAGE, () FREQUENCY (Hz) 8/4
9 Package information 4 Package information In order to meet environmental requirements, STMicroelectronics offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an STMicroelectronics trademark. ECOPACK specifications are available at: 4. DIP4 package information Figure 5. DIP4 package mechanical drawing Table 4. Ref. DIP4 package mechanical data Millimeters Inches Min. Typ. Max. Min. Typ. Max. a B b b D E e e F I L Z /4
10 Package information TS27M4C, TS27M4I, TS27M4M 4.2 SO-4 package information Figure 6. SO-4 package mechanical drawing Table 5. Ref. SO-4 package mechanical data Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A a a b b C c 45 (typ.) D E e e F G L M S 8 (max.) 0/4
11 Package information 4.3 TSSOP4 package information Figure 7. TSSOP4 package mechanical drawing A A2 A b e c K L E D E PIN IDENTIFICATION Figure 8. Ref. TSSOP4 package mechanical data Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A A A b c D E E e 0.65 BSC BSC K L /4
12 Ordering information TS27M4C, TS27M4I, TS27M4M 5 Ordering information Table 6. Order code Order codes Temperature range Package Packing Marking TS27M4CD TS27M4CDT TS27M4ACD TS27M4ACDT TS27M4CN TS27M4ACN 0 C, +70 C SO-4 DIP4 Tube or Tape & reel Tube 27M4C 27M4AC TS27M4CN TS27M4ACN TS27M4CPT TS27M4ACPT TSSOP4 Tape & reel 27M4C 27M4AC TS27M4ID TS27M4IDT TS27M4AID TS27M4AIDT TS27M4IN TS27M4AIN -40 C, +25 C SO-4 DIP4 Tube or Tape & reel Tube 27M4I 27M4AI TS27M4IN TS27M4AIN TS27M4IPT TS27M4AIPT TSSOP4 Tape & reel 27M4I 27M4AI TS27M4MD TS27M4MDT TS27M4AM TS27M4AMDT TS27M4MN TS27M4AMN -55 C, +25 C SO-4 DIP4 Tube or Tape & reel Tube 27M4M 27M4AM TS27M4MN TS27M4AMN TS27M4MPT TS27M4AMPT TSSOP4 Tape & reel 27M4M 27M4AM 2/4
13 Revision history 6 Revision history Table 7. Document revision history Date Revision Changes 07-Jan-200 Initial release. 08-Sep Removed TS27M4B version of device. Added R thja, R thjc, and ESD parameters in Table : Absolute maximum ratings (AMR). Expanded Table 6: Order codes. Updated document format. 3/4
14 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics N and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROED IN WRITING BY AN AUTHORIZED ST REPRESENTATIE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEERE PROPERTY OR ENIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIE GRADE" MAY ONLY BE USED IN AUTOMOTIE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 4/4
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Low power single inverter gate Features High speed: t PD = 4.3 ns (max.) at V CC = 2.3 V Power down protection on inputs and outputs Balanced propagation delays: t PLH t PHL Operating voltage range: V
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High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier
Order code Marking Package Packaging. STE07DE220 E07DE220 ISOTOP Tube. May 2008 Rev 1 1/7
Hybrid emitter switched bipolar traistor ESBT 2200-7A - 0.07 W power module Preliminary Data Features Table 1. CS(ON) I C R CS(ON) 0.5 7A 0.07 Ω High voltage / high current cascode configuration Ultra
Part numbers Order codes Packages Temperature range. LM137 LM137K TO-3-55 C to 150 C LM337 LM337K TO-3 0 C to 125 C LM337 LM337SP TO C to 125 C
LM137 LM337 Three-terminal adjustable negative voltage regulators Features Output voltage adjustable down to V REF 1.5 A guaranteed output current 0.3%/V typical load regulation 0.01%/V typical line regulation
STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
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High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
TS931ILT/AILT/BILT SOT23-5L Tape & Reel
Output Rail-to-Rail Micropower Operational Amplifiers n Rail-to-rail output voltage swing n Micropower consumption (µa) n Single supply operation (.7V to V n Low offset (mv max for TS93xB) n CMOS inputs
LS1240. Electronic two-tone ringer. Features. Description. Pin connection (top view)
Electronic two-tone ringer Features Low current consumption, in order to allow the parallel operation of 4 devices Integrated rectifier bridge with zener diodes to protect against over voltages little
BAT48 Series. Small signal Schottky diodes. Main product characteristics. Features and benefits. Order codes. Description. BAT48ZFILM (Single) SOD-123
Small signal Schottky diodes Main product characteristics I F V RRM C (typ) T j (max) 350 ma 40 V 18 pf 150 C SOD-123 BAT48ZFILM (Single) Features and benefits Low leakage current losses Negligible switching
KF25B, KF33B KF50B, KF80B
KF25B, KF33B KF50B, KF80B Very low drop voltage regulators with inhibit Datasheet production data Features Very low dropout voltage (0.4 V) Very low quiescent current (typ. 50 µa in OFF mode, 500 µa in
BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
MJE182 Low voltage high speed switching NPN transistor Features Applications Description High speed switching NPN device
Low voltage high speed switching NPN transistor Features High speed switching NPN device Applications Audio amplifier High speed switching applications Description This device is an NPN low voltage transistor
TSV321-TSV358-TSV324. General Purpose, Input/Output Rail-to-Rail Low Power Operational Amplifiers. Description. Applications
General Purpose, Input/Output Rail-to-Rail Low Power Operational Amplifiers Operating at V CC = 2.5V to 6V Rail-to-rail input & output Extended V icm (V DD -.2V to V CC +.2V) Capable of driving a 32Ω load
D44H8 - D44H11 D45H8 - D45H11
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed TAB Applications Power amplifier Switching circuits 1 2 3 Description
2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description
2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in
Order code Temperature range Package Packaging
Low power high speed RS-485/RS-422 transceiver Features Low supply current: 5 ma max -7 V to 12 V common mode input voltage range 70 mv typical input hysteresis Designed for 25 Mbps operation Operate from
2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
2N2219AHR. Hi-Rel NPN bipolar transistor 40 V A. Features. Description
Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BV CEO 40 V I C (max) 0.8 A H FE at 10 V - 150 ma > 100 Operating temperature range - 65 C to + 200 C Hi-Rel NPN bipolar transistor Linear gain characteristics
ST13003D-K High voltage fast-switching NPN power transistor Features Applications Description
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation ery high switching speed Integrated antiparallel
Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8
2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface
Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9
Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)
TL084. General purpose JFET quad operational amplifier. Features. Description
General purpose JFET quad operational amplifier Features Wide commonmode (up to V + CC ) and differential voltage range Low input bias and offset current Output shortcircuit protection High input impedance
2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier
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Low voltage 16-Bit, constant current LED sink driver Features Low voltage power supply down to 3V 16 constant current output channels Adjustable output current through external resistor Serial data IN/parallel
SD1728 (TH430) RF & Microwave transistors HF SSB application. Features. Description. Pin connection
SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter P OUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar
TL074. Low noise JFET quad operational amplifier. Features. Description
Low noise JFET quad operational amplifier Features Wide commonmode (up to V + CC ) and differential voltage range Low input bias and offset current Low noise e n = 15 nv/ Hz (typ) Output shortcircuit protection
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PNP power Darlington transistor Features Monolithic Darlington configuration Integrated antiparallel collector-emitter diode Application Linear and switching industrial equipment Description The TIP145
ESDALCL6-4P6A. Multi-line low capacitance and low leakage current ESD protection. Features. Applications. Description
Multi-line low capacitance and low leakage current ESD protection Features Datasheet production data Diode array topology: 4 lines protection Low leakage current: 10 na at 3 V 1 na at 1 V Very low diode
Low noise low drop voltage regulator with shutdown function. Part numbers
Low noise low drop voltage regulator with shutdown function Features Output current up to 150 ma Low dropout voltage (350 mv at I OUT = 50 ma) Very low quiescent current: 0.1 µa in OFF mode and max. 250
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6 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC diode
ST High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features DC current gain classification High voltage capability Low spread of dynamic parameters ery high switching speed TAB Applications Electronic ballast
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High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier
STD830CP40. Complementary transistor pair in a single package. Features. Application. Description
Complementary transistor pair in a single package Datasheet production data Features Low CE(sat) Simplified circuit design Reduced component count Low spread of dynamic parameters Application Compact fluorescent