A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices.

Size: px
Start display at page:

Download "A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices."

Transcription

1 A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices. M C Wilson, P H Osborne, S Thomas and T Cook Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Tel: , FAX: martin_wilson@mitel.com ABSTRACT A new high performance silicon complementary bipolar technology is introduced. In addition a novel process "enhancement" technique based on a local oxidation is described and demonstrated and NPN devices with cut-off frequencies up to 45GHz and PNP devices of 20GHz have been fabricated. We propose that the technique we have used will allow specific transistors within a circuit to be optimised, as required. Keywords: Silicon, RF, Bipolar technology, Complementary, Local oxidation 1. INTRODUCTION To meet the challenge of future 5GHz RF communications systems we have developed a high performance complementary bipolar process technology. We have adopted the complementary approach as it enables more efficient design of power consumption stages, synthesisers, linear amplifiers and active filters. Our new silicon complementary bipolar technology, Process HJ, is fully isolated, is wholly silicon and includes a full suite of passive components. The high performance PNP of this process has been designed with comparable current handling to the NPN and generally gives greater design flexibility. The process is considered ideal for low voltage, low power mixed signal RF and IF applications and primary applications will be synthesisers, converters, mixers, tuners and amplifiers. In this paper we build on the performance and flexibility of Process HJ by recognizing that in certain RF circuit stages the resulting chip could have improved performance if the technology available to the designer comprised transistors with different levels of performance. In a complementary process, for example, we propose that the technology could comprise not only "standard" NPN and PNP transistors but also "super" NPN and PNP transistors as well. In this paper we outline the basic complementary process HJ and introduce a novel process "enhancement" technique. We fully describe the enhancement technique, a technique based on the sacrificial oxidation of part of the epitaxial layer, and demonstrate its use to tailor the NPN device of the complementary. In the initial application we have enhanced the performance of all NPN test devices while maintaining the PNP performance. We propose that the technique we have used to be highly selective and could permit specific devices, NPN or PNP, to be optimized, if required. We report first results on enhanced NPN devices with cut-off frequencies up to 45GHz and PNP devices of 20GHz. 2. PROCESS DESCRIPTION The complementary process, HJ, was developed from an earlier NPN-only technology [1] and has been described fully elsewhere [2]. In summary, HJ includes standard NPN transistors, standard vertical PNP transistors, lateral PNP transistors, high and low value polysilicon resistors, low value capacitors (with an optional high value capacitor), integrated inductors, ESD protection and substrate contacts. The complete complementary process comprises a high performance NPN and a fully integrated PNP and uses 7 photomasks more than a comparable high performance NPN-only process. The additional photo operations are for low tolerance implant clearance masks. The buried layers for the PNP are formed by deep implants, optimised for zero defects, but without any degradation to performance. The thin n-type epitaxial layer is determined by the NPN, and over-doped with an implanted p-well for the PNP. The minimum photolithographic feature for HJ is 0.6µm, for the NPN and PNP emitters

2 and isolation is achieved by 0.8µm wide, 7µm deep trenches. The process has 3-level metallisation with a contact pitch of 2.4µm at the first level. The NPN and PNP transistors are shown schematically in cross-section in figures 1 and 2. The emitter region of a PNP device (without metal layers, for clarity) is shown in the TEM cross-section of figure 3. Base Emitter Collector oxide P+ base P+ epitaxy (n-) DC Oxide BN CS Substrate (p-) CS Figure 1. Schematic cross-section of a NPN transistor. Base Emitter Collector Well N+ N+ Base pwell DC Oxide Oxide Oxide BP CS BSUB oxide Oxide Substrate (p-) CS Figure 2. Schematic cross-section of a PNP transistor. Figure 3. TEM cross-section of fabricated PNP "standard" emitter.

3 3. DEVICE RESULTS: STANDARD Typical "standard" device parameters are shown in Table 1 and passive component parameters in Table 2. The current gain of NPN and PNP transistors are typically 150 and 50 respectively yielding beta-early voltage products of 5250 and 1650 respectively. The collector-emitter breakdown voltages are normally 3.5V and 4.5V for the NPN and PNP devices, respectively. Table 1. Typical "standard" device parameters. Param. Condition NPN PNP Units Emitter size 0.6 x x 3 µm Hfe Vbe=0.7V Vcb=0V Hfe Vbe=0.8V Vcb=0V Ic(on) Vbe=0.7V µa Vcb=0V Ic(on) Vbe=0.8V µa Vcb=0V BVcbo Ic=1µA 12 9 V BVces Ic=1µA 12 9 V BVceo Ic=1µA V BVebo Ie=1µA 3 3 V Vaf V ft Vce=3V GHz (@Ic) (1.3mA) (0.9mA) Re Ω Rb Ω Rc Ω Cje Vbe=0V ff Cjc Vcb=0V ff Cjs Vcs=0V ff Table 2. Typical passive component parameters. Comp. Type Value Units poly res LoN 110 Ω/sq poly res LoP 155 Ω/sq poly res HiP 1400 Ω/sq PtSi res PtSi 9 Ω/sq Cap MIM 0.5 ff/µm 2 HVCap dc 1.4 ff/µm 2 Varactor c-b 0.6 ff/µm 2 Inductor integrated 3.5 nh Inductor integrated >10 Q Schottky PtSi diode 500 mv@100ua

4 Figures 4 and 5 are average Forward Gummel plots of NPN and PNP transistors respectively and show constant gain over 6 decades of current, in each case. The curves are mean values from 686 sites distributed across multiple wafers and lots. Good ideality was observed indicating good quality junctions. Figure 4. Average Gummel plot for 0.6x3.0µm "standard" NPNs. Figure 5. Average Gummel plot for 0.6x3.0µm "standard" PNPs. Figures 6 and 7 show the variation of the cut-off frequency (ft) with collector current (Ic) at a Vce of 3V for NPN and PNP devices. The peak ft for the NPN was 30GHz at 1.3mA and for the PNP was 20GHz at 0.9mA. The NPN at 2V Vce had a 1sigma spread in ft (at peak ft) of 8% and the PNP, 3.5%. The data was from more than 300 sites distributed across multiple wafers and lots and demonstrated good overall process control. The degradation in cut-off frequency at high collector currents is attributed to the Kirk effect and carrier saturation at the base-collector junction. The PNP exhibits slightly more pronounced degradation beyond the ft peak, compared to the NPN device, due to its higher collector resistance. The PNP collector was optimised for performance, voltage-breakdown and yield. The resulting PNP transistor exhibited an excellent peak ft, a 4.5V collector-emitter breakdown and a forward beta of 50.

5 30 25 Vce 3V E -05 1E -04 1E -03 1E -02 Ic (A) Figure 6. ft versus Ic plot for 0.6x3.0µm "standard" NPN Vce=3V E -05 1E -04 1E -03 1E -02 Ic (A) Figure 7. ft versus Ic plot for 0.6x3.0µm "standard" PNP. Figures 8 and 9 show typical Gummel plots from multiple NPN and PNP transistor arrays. The arrays comprised up to 30K minimum geometry (0.6x1.6µm) transistors which exhibited current scaling with array size. This impressively demonstrates the integrity of the transistors and is particularly significant for the PNP as it reinforces our claim that the implanted layers were of good quality.

6 1E -01 Ic 1E -02 1E -03 1E -04 Ib 1E -05 1E -06 1E -07 1E -08 1E -09 1E Vbe (V) Figure 8. Gummel plots of parallel arrays of 3k and 30k "standard" NPN devices. 1E -01 1E -02 Ic 1E -03 Ib 1E -04 1E -05 1E -06 1E -07 1E -08 1E -09 1E Vbe (V) Figure 9. Gummel plots of parallel arrays of 3k and 24k "standard" PNP devices. 4. CIRCUIT PERFORMANCE: STANDARD Initial circuit performance has been demonstrated using both NPN and PNP ring oscillators. The ROs for the NPN devices were 11-stage CML circuits with a divide-by-sixteen stage attached. For minimum geometry NPN devices the power delay product was 20fJ with a minimum gate delay of 31ps at 300uA. The minimum gate delay achieved for optimised NPN devices was 23ps. The ROs for the PNP devices were 41-stage CML circuits and minimum geometry devices exhibited a power delay product of 40fJ with a minimum gate delay of 50ps at 300uA. Circuit performance has been further assessed by fabricating a wide dynamic range RF amplifier with automatic gain control for applications up to 2GHz. The circuit had a maximum gain of +22dB, noise figure of 7dB and IIP2 of +12dBm with IIP3 of +15dBm. Additional circuits have been designed including RF down-converters and up-converters for media tuners, dual band GSM lineariser circuits for digital mobile phone base stations and pre-amplifiers for optical disc drives. 5. DEVICE RESULTS: ENHANCED As stated earlier, in certain RF circuit stages the resulting chip could have improved performance if the technology available to the designer comprised transistors with different levels of performance. To demonstrate this we have used a technique based on LOCOS to sacrificially oxidise part of the epitaxial layer to tailor the NPN device. In an initial application we have enhanced the performance of all NPN test devices while maintaining the PNP performance. However, the technique we have used will allow specific devices, NPN or PNP, to be optimised, if required. In many ways this "sacrificial oxidation" technique is analogous to that of the "selective implanted collector" (SIC) but, we believe, has the advantage of superior control, manufacturability and flexibility [3], [4]. Figure 10 shows an SEM micrograph of an NPN transistor during processing. In this example the device has had buried layer processing, epitaxy, deep trench etching and sacrificial oxidation. All oxide has been removed and the small, depressed region in the silicon is evident. This results in a localised reduction of the epitaxial layer. In this experiment a range of sacrificial oxides were grown, the details for which are shown in Table 3. Subsequent device fabrication was standard with no further modification necessary.

7 Table 3. Sacrificial oxide thickness details. Sample Sacrificial Tox Sacrificial Tox Units NPN PNP Oxide A Oxide A Oxide A Oxide A Figure 10. NPN transistor showing local thinning of epitaxy after removal of sacrificial oxide The resulting NPN device parameters are shown in Table 4. The cut-off frequency, breakdown voltages and Early voltage are a function of the reduced epitaxial thickness and grown sacrificial oxide. The NPN beta remained constant throughout because the emitter-base processing was identical in each case. This is considered another advantage over the SIC technique. Finally, the cut-off frequencies at a Vce of 2.4V are shown in figure 11 for NPN devices of each sacrificial oxide. The peak cut-off frequencies were 28GHz, 36GHZ, 40GHZ and 45GHz. Table 4. "Enhanced" NPN device parameters. NPN Oxide.1 Oxide.2 Oxide.3 Units Parameter Emitter size 0.6 x x x 3 µm Hfe Vbe=0.8V Ic(on) µa Vbe=0.8V BVcbo V BVceo V Vaf V ft Vce=2.4V GHz

8 50 Vce=2.4V ft (GHz) E-06 1E-05 1E-04 1E-03 1E-02 Ic (A) Oxide.0 Oxide.1 Oxide.2 Oxide.3 Figure 11. ft versus Ic plots for 0.6x3.0µm standard (oxide.0) and "enhanced" NPNs.

9 6. SUMMARY AND CONCLUSIONS A new high performance silicon complementary bipolar technology has been reported. A novel process "enhancement" technique based on LOCOS has been demonstrated and NPN devices with cut-off frequencies up to 45GHz and PNP devices of 20GHz have been fabricated. ACKNOWLEDGEMENTS The authors would like to thank our Mitel collegues and all members of the Swindon Fab. The authors acknowledge the contribution of P Pearson and P Augustus of GEC-Marconi Materials Technology Ltd. REFERENCES 1. P C Hunt and M P Cooke, "Process HE: A highly advanced trench isolated bipolar technology for analogue and digital applications", Proc IEEE CICC, pp , Rochester, New York, USA. 2. M C Wilson et. al. "Process HJ: A 30GHz NPN and 20GHz PNP complementary bipolar process for high linearity RF circuits", Proc. IEEE 1998 BCTM, pp , Minneapolis, USA. 3. S Konaka et.al. "A 20ps/G Si bipolar IC using advanced SST with collector ion implantation", Proc 19th ICSSDM 1987, p331, Tokyo, Japan. 4. M C Wilson et.al. "Application of a selective implanted collector to an advanced bipolar process", Proc 20th ESSDERC 1990, p349, Nottingham, UK.

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught

More information

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught

More information

Maxim MAX3940E Electro-Absorption Modulator Structural Analysis

Maxim MAX3940E Electro-Absorption Modulator Structural Analysis May 23, 2006 Maxim MAX3940E Electro-Absorption Modulator Structural Analysis For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor

More information

AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR

AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR F. Carrara - A. Scuderi - G. Tontodonato - G. Palmisano 1. ABSTRACT The potential of a high-performance low-cost silicon bipolar

More information

Wafer-scale 3D integration of silicon-on-insulator RF amplifiers

Wafer-scale 3D integration of silicon-on-insulator RF amplifiers Wafer-scale integration of silicon-on-insulator RF amplifiers The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation As Published

More information

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI 1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward

More information

Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400

Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-1 Features Low Noise Figure: 1.6 db Typical at 3. db Typical at. GHz High Associated Gain: 1.5 db Typical at 1.5 db Typical at. GHz

More information

Chapter 3 Basics Semiconductor Devices and Processing

Chapter 3 Basics Semiconductor Devices and Processing Chapter 3 Basics Semiconductor Devices and Processing 1 Objectives Identify at least two semiconductor materials from the periodic table of elements List n-type and p-type dopants Describe a diode and

More information

Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1. Topics

Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1. Topics Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1 Topics What is semiconductor Basic semiconductor devices Basics of IC processing CMOS technologies 2006/9/27 2 1 What is Semiconductor

More information

EE 330 Lecture 21. Bipolar Process Flow

EE 330 Lecture 21. Bipolar Process Flow EE 330 Lecture 21 Bipolar Process Flow Exam 2 Friday March 9 Exam 3 Friday April 13 Review from Last Lecture Simplified Multi-Region Model I C βi B JSA IB β V 1 V E e V CE BE V t AF V BE >0.4V V BC

More information

Technology Overview. MM-Wave SiGe IC Design

Technology Overview. MM-Wave SiGe IC Design Sheet Code RFi0606 Technology Overview MM-Wave SiGe IC Design Increasing consumer demand for high data-rate wireless applications has resulted in development activity to exploit the mm-wave frequency range

More information

Gallium nitride (GaN)

Gallium nitride (GaN) 80 Technology focus: GaN power electronics Vertical, CMOS and dual-gate approaches to gallium nitride power electronics US research company HRL Laboratories has published a number of papers concerning

More information

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector

More information

In this lecture we will begin a new topic namely the Metal-Oxide-Semiconductor Field Effect Transistor.

In this lecture we will begin a new topic namely the Metal-Oxide-Semiconductor Field Effect Transistor. Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 38 MOS Field Effect Transistor In this lecture we will begin

More information

2.8 - CMOS TECHNOLOGY

2.8 - CMOS TECHNOLOGY CMOS Technology (6/7/00) Page 1 2.8 - CMOS TECHNOLOGY INTRODUCTION Objective The objective of this presentation is: 1.) Illustrate the fabrication sequence for a typical MOS transistor 2.) Show the physical

More information

700 SERIES 20V BIPOLAR ARRAY FAMILY

700 SERIES 20V BIPOLAR ARRAY FAMILY Device Engineering Incorporated 385 East Alamo Drive Chandler, AZ 85225 Phone: (480) 303-0822 Fax: (480) 303-0824 E-mail: admin@deiaz.com 700 SERIES 20V BIPOLAR ARRAY FAMILY FEATURES 20V bipolar analog

More information

InGaP HBT MMIC Development

InGaP HBT MMIC Development InGaP HBT MMIC Development Andy Dearn, Liam Devlin; Plextek Ltd, Wing Yau, Owen Wu; Global Communication Semiconductors, Inc. Abstract InGaP HBT is being increasingly adopted as the technology of choice

More information

The Art of ANALOG LAYOUT Second Edition

The Art of ANALOG LAYOUT Second Edition The Art of ANALOG LAYOUT Second Edition Alan Hastings 3 EARSON Pearson Education International Contents Preface to the Second Edition xvii Preface to the First Edition xix Acknowledgments xxi 1 Device

More information

700 SERIES 20V BIPOLAR ARRAY FAMILY

700 SERIES 20V BIPOLAR ARRAY FAMILY Device Engineering Incorporated 0 E. Fifth St. Tempe, AZ 858 Phone: (480) 303-08 Fax: (480) 303-084 E-mail: admin@deiaz.com 00 SERIES 0V BIPOLAR ARRAY FAMILY FEATURES 0V bipolar analog array family of

More information

Electronic Circuits - Tutorial 07 BJT transistor 1

Electronic Circuits - Tutorial 07 BJT transistor 1 Electronic Circuits - Tutorial 07 BJT transistor 1-1 / 20 - T & F # Question 1 A bipolar junction transistor has three terminals. T 2 For operation in the linear or active region, the base-emitter junction

More information

MP 4.2 A DECT Transceiver Chip Set Using SiGe Technology

MP 4.2 A DECT Transceiver Chip Set Using SiGe Technology MP 4.2 A DECT Transceiver Chip Set Using SiGe Technology Matthias Bopp, Martin Alles, Meinolf Arens, Dirk Eichel, Stephan Gerlach, Rainer Götzfried, Frank Gruson, Michael Kocks, Gerald Krimmer, Reinhard

More information

techniques, and gold metalization in the fabrication of this device.

techniques, and gold metalization in the fabrication of this device. Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:

More information

INTEGRATED 0.18 MICRON RF TECHNOLOGY PLATFORM WITH 1.

INTEGRATED 0.18 MICRON RF TECHNOLOGY PLATFORM WITH 1. INTEGRATED 0.18 MICRON RF TECHNOLOGY PLATFORM WITH 1.8V 5V 12V 25V & 42V MOS FOR HIGH DIGITAL CONTENT POWER RF APPLICATIONS FEATURING FT = 55 GHZ RFMOS AND FT > 17 GHZ 12V RF-LDMOS. S. Levin, E. Aloni,

More information

Semiconductor Devices

Semiconductor Devices Semiconductor Devices - 2014 Lecture Course Part of SS Module PY4P03 Dr. P. Stamenov School of Physics and CRANN, Trinity College, Dublin 2, Ireland Hilary Term, TCD 3 th of Feb 14 MOSFET Unmodified Channel

More information

1 FUNDAMENTAL CONCEPTS What is Noise Coupling 1

1 FUNDAMENTAL CONCEPTS What is Noise Coupling 1 Contents 1 FUNDAMENTAL CONCEPTS 1 1.1 What is Noise Coupling 1 1.2 Resistance 3 1.2.1 Resistivity and Resistance 3 1.2.2 Wire Resistance 4 1.2.3 Sheet Resistance 5 1.2.4 Skin Effect 6 1.2.5 Resistance

More information

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS Due Date (NOTE CHANGE): Thursday, Nov 12 th @ 5 pm; Late penalty in effect! Most active electronic devices are based on the transistor as the fundamental

More information

Electronics II Lecture 2(a): Bipolar Junction Transistors

Electronics II Lecture 2(a): Bipolar Junction Transistors Lecture 2(a): Bipolar Junction Transistors A/Lectr. Khalid Shakir Dept. Of Engineering Engineering by Pearson Transistor! Transistor=Transfer+Resistor. When Transistor operates in active region its input

More information

Chapter 2 : Semiconductor Materials & Devices (II) Feb

Chapter 2 : Semiconductor Materials & Devices (II) Feb Chapter 2 : Semiconductor Materials & Devices (II) 1 Reference 1. SemiconductorManufacturing Technology: Michael Quirk and Julian Serda (2001) 3. Microelectronic Circuits (5/e): Sedra & Smith (2004) 4.

More information

VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras

VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras Lecture - 40 BICMOS technology So, today we are going to have the last class on this VLSI

More information

Integrated Circuits: FABRICATION & CHARACTERISTICS - 4. Riju C Issac

Integrated Circuits: FABRICATION & CHARACTERISTICS - 4. Riju C Issac Integrated Circuits: FABRICATION & CHARACTERISTICS - 4 Riju C Issac INTEGRATED RESISTORS Resistor in a monolithic IC is very often obtained by the bulk resistivity of one of the diffused areas. P-type

More information

Power MOSFET Zheng Yang (ERF 3017,

Power MOSFET Zheng Yang (ERF 3017, ECE442 Power Semiconductor Devices and Integrated Circuits Power MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Evolution of low-voltage (

More information

An Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005

An Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005 An Introduction to Bipolar Junction Transistors Transistors Transistors are three port devices used in most integrated circuits such as amplifiers. Non amplifying components we have seen so far, such as

More information

Power Bipolar Junction Transistors (BJTs)

Power Bipolar Junction Transistors (BJTs) ECE442 Power Semiconductor Devices and Integrated Circuits Power Bipolar Junction Transistors (BJTs) Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Bipolar Junction Transistor (BJT) Background The

More information

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,

More information

14. Transistor Characteristics Lab

14. Transistor Characteristics Lab 1 14. Transistor Characteristics Lab Introduction Transistors are the active component in various devices like amplifiers and oscillators. They are called active devices since transistors are capable of

More information

Seminar report Bicmos Technology

Seminar report Bicmos Technology A Seminar report On Bicmos Technology Submitted in partial fulfillment of the requirement for the award of degree of Bachelor of Technology in Mechanical SUBMITTED TO: SUBMITTED BY: Acknowledgement I would

More information

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02 EE 5611 Introduction to Microelectronic Technologies Fall 2014 Thursday, September 04, 2014 Lecture 02 1 Lecture Outline Review on semiconductor materials Review on microelectronic devices Example of microelectronic

More information

7. Bipolar Junction Transistor

7. Bipolar Junction Transistor 41 7. Bipolar Junction Transistor 7.1. Objectives - To experimentally examine the principles of operation of bipolar junction transistor (BJT); - To measure basic characteristics of n-p-n silicon transistor

More information

Wiring Parasitics. Contact Resistance Measurement and Rules

Wiring Parasitics. Contact Resistance Measurement and Rules Wiring Parasitics Contact Resistance Measurement and Rules Connections between metal layers and nonmetal layers are called contacts. Connections between metal layers are called vias. For non-critical design,

More information

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth

More information

EXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics

EXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics Name & Surname: ID: Date: EXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics Objectives: 1. To determine transistor type (npn, pnp),terminals, and material using a DMM 2. To graph the

More information

NPN SILICON OSCILLATOR AND MIXER TRANSISTOR

NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 11/6/2007 MOSFETs Lecture 6 BJTs- Lecture 1 Reading Assignment: Chapter 10 More Scalable Device Structures Vertical Scaling is important. For example,

More information

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) 4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.

More information

Device Technologies. Yau - 1

Device Technologies. Yau - 1 Device Technologies Yau - 1 Objectives After studying the material in this chapter, you will be able to: 1. Identify differences between analog and digital devices and passive and active components. Explain

More information

After the initial bend, the curves approximate a straight line. The slope or gradient of each line represents the output impedance, for a particular

After the initial bend, the curves approximate a straight line. The slope or gradient of each line represents the output impedance, for a particular BJT Biasing A bipolar junction transistor, (BJT) is very versatile. It can be used in many ways, as an amplifier, a switch or an oscillator and many other uses too. Before an input signal is applied its

More information

Indium Phosphide and Related Materials Selectively implanted subcollector DHBTs

Indium Phosphide and Related Materials Selectively implanted subcollector DHBTs Indium Phosphide and Related Materials - 2006 Selectively implanted subcollector DHBTs Navin Parthasarathy, Z. Griffith, C. Kadow, U. Singisetti, and M.J.W. Rodwell Dept. of Electrical and Computer Engineering,

More information

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current

More information

THERE is currently a great deal of activity directed toward

THERE is currently a great deal of activity directed toward IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 12, DECEMBER 1997 2097 A 2.5-GHz BiCMOS Transceiver for Wireless LAN s Robert G. Meyer, Fellow IEEE, William D. Mack, Senior Member IEEE, and Johannes

More information

AT General Purpose, Low Current NPN Silicon Bipolar Transistor. Data Sheet

AT General Purpose, Low Current NPN Silicon Bipolar Transistor. Data Sheet AT-4532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Avago s AT-4532 is a general purpose NPN bipolar transistor that has been optimized for maximum f t at low voltage

More information

Transistor Characteristics

Transistor Characteristics Transistor Characteristics Topics covered in this presentation: Transistor Construction Transistor Operation Transistor Characteristics 1 of 15 The Transistor The transistor is a semiconductor device that

More information

Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package

Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is

More information

A New SiGe Base Lateral PNM Schottky Collector. Bipolar Transistor on SOI for Non Saturating. VLSI Logic Design

A New SiGe Base Lateral PNM Schottky Collector. Bipolar Transistor on SOI for Non Saturating. VLSI Logic Design A ew SiGe Base Lateral PM Schottky Collector Bipolar Transistor on SOI for on Saturating VLSI Logic Design Abstract A novel bipolar transistor structure, namely, SiGe base lateral PM Schottky collector

More information

PRELIMINARY DATA SHEET PACKAGE OUTLINE

PRELIMINARY DATA SHEET PACKAGE OUTLINE PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES LOW NOISE: :NF = 1.7 db TYP at f = GHz,, lc = 3 ma :NF = 1.5 db TYP at f = GHz, VCE = 3 V, lc = 3 ma HIGH GAIN: : S1E = 3.5 db TYP

More information

The Design of E-band MMIC Amplifiers

The Design of E-band MMIC Amplifiers The Design of E-band MMIC Amplifiers Liam Devlin, Stuart Glynn, Graham Pearson, Andy Dearn * Plextek Ltd, London Road, Great Chesterford, Essex, CB10 1NY, UK; (lmd@plextek.co.uk) Abstract The worldwide

More information

TRANSISTOR TRANSISTOR

TRANSISTOR TRANSISTOR It is made up of semiconductor material such as Si and Ge. Usually, it comprises of three terminals namely, base, emitter and collector for providing connection to the external circuit. Today, some transistors

More information

BiCMOS055 Technology Offer

BiCMOS055 Technology Offer BiCMOS055 Technology Offer STMicroelectronics Technology & Design Platforms, Crolles February 2016 Best-in-class BiCMOS BiCMOS055 (B55)* is: The latest BiCMOS technology developed in STMicroelectronics

More information

Topic 3. CMOS Fabrication Process

Topic 3. CMOS Fabrication Process Topic 3 CMOS Fabrication Process Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk Lecture 3-1 Layout of a Inverter

More information

INTRODUCTION TO MOS TECHNOLOGY

INTRODUCTION TO MOS TECHNOLOGY INTRODUCTION TO MOS TECHNOLOGY 1. The MOS transistor The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor

More information

Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering

Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter

More information

QRTECH AB, Mejerigatan 1, Gothenburg, Sweden

QRTECH AB, Mejerigatan 1, Gothenburg, Sweden Materials Science Forum Online: 213-1-25 ISSN: 1662-9752, Vols. 74-742, pp 97-973 doi:1.428/www.scientific.net/msf.74-742.97 213 Trans Tech Publications, Switzerland 1 V, 3.3 m SiC bipolar junction transistor

More information

A 7ns, 6mA, Single-Supply Comparator Fabricated on Linear s 6GHz Complementary Bipolar Process

A 7ns, 6mA, Single-Supply Comparator Fabricated on Linear s 6GHz Complementary Bipolar Process A 7ns, 6mA, Single-Supply Comparator Fabricated on Linear s 6GHz Complementary Bipolar Process Introduction The is an ultrafast (7ns), low power (6mA), single-supply comparator designed to operate on either

More information

Product Catalog. Semiconductor Intellectual Property & Technology Licensing Program

Product Catalog. Semiconductor Intellectual Property & Technology Licensing Program Product Catalog Semiconductor Intellectual Property & Technology Licensing Program MANUFACTURING PROCESS TECHNOLOGY OVERVIEW 90 nm 130 nm 0.18 µm 0.25 µm 0.35 µm >0.40 µm Logic CMOS SOI CMOS SOI CMOS SOI

More information

CPH6532. Bipolar Transistor 50V, 1A, Low VCE(sat) NPN Dual CPH6. Applications. Features. Specifications

CPH6532. Bipolar Transistor 50V, 1A, Low VCE(sat) NPN Dual CPH6. Applications. Features. Specifications Ordering number : ENA0A CPH6 Bipolar Transistor 0V, 1A, Low VCE(sat) NPN Dual CPH6 http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers, flash Features Composite type with two NPN

More information

A 7-GHz 1.8-dB NF CMOS Low-Noise Amplifier

A 7-GHz 1.8-dB NF CMOS Low-Noise Amplifier 852 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 37, NO. 7, JULY 2002 A 7-GHz 1.8-dB NF CMOS Low-Noise Amplifier Ryuichi Fujimoto, Member, IEEE, Kenji Kojima, and Shoji Otaka Abstract A 7-GHz low-noise amplifier

More information

Basic Fabrication Steps

Basic Fabrication Steps Basic Fabrication Steps and Layout Somayyeh Koohi Department of Computer Engineering Adapted with modifications from lecture notes prepared by author Outline Fabrication steps Transistor structures Transistor

More information

Layout of a Inverter. Topic 3. CMOS Fabrication Process. The CMOS Process - photolithography (2) The CMOS Process - photolithography (1) v o.

Layout of a Inverter. Topic 3. CMOS Fabrication Process. The CMOS Process - photolithography (2) The CMOS Process - photolithography (1) v o. Layout of a Inverter Topic 3 CMOS Fabrication Process V DD Q p Peter Cheung Department of Electrical & Electronic Engineering Imperial College London v i v o Q n URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk

More information

Solid State Devices- Part- II. Module- IV

Solid State Devices- Part- II. Module- IV Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the

More information

2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics Output Power = 1.0 Watt Minimum Gain = 10 db Efficiency = 45%

More information

Power Transistor (80V, 1A)

Power Transistor (80V, 1A) Power Transistor (80V, A) SD898 / SD733 / SD768S / SD863 SD898 / SD733 / SD768S / SD863!Features ) High VCEO, VCEO=80V ) High IC, IC=A (DC) 3) Good hfe linearity 4) Low VCE (sat) ) Complements the SB60

More information

EE 330 Lecture 19. Bipolar Devices

EE 330 Lecture 19. Bipolar Devices 330 Lecture 19 ipolar Devices Review from last lecture n-well n-well n- p- Review from last lecture Metal Mask A-A Section - Section Review from last lecture D A A D Review from last lecture Should now

More information

Chapter 3 Bipolar Junction Transistors (BJT)

Chapter 3 Bipolar Junction Transistors (BJT) Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,

More information

140 COMMERCE DRIVE MONTGOMERYVILLE, PA PHONE: (215) FAX: (215)

140 COMMERCE DRIVE MONTGOMERYVILLE, PA PHONE: (215) FAX: (215) RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features

More information

CPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company

CPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company Ordering number : ENN CPH61 CPH61 Features NPN / PNP Epitaxial Planar Silicon Transistors Video Output Driver,High-Frequency Amplifier Applications Composite type with NPN transistor and PNP transistor

More information

21 rue La Noue Bras de Fer Nantes - France Phone : +33 (0) w7-foldite :

21 rue La Noue Bras de Fer Nantes - France Phone : +33 (0) w7-foldite : 21 rue La Noue Bras de Fer 44200 - Nantes - France Phone : +33 (0) 240 180 916 - email : info@systemplus.fr - w7-foldite : www.systemplus.fr February 2013 Version 1 Written by: Sylvain HALLEREAU DISCLAIMER

More information

ITRS: RF and Analog/Mixed- Signal Technologies for Wireless Communications. Nick Krajewski CMPE /16/2005

ITRS: RF and Analog/Mixed- Signal Technologies for Wireless Communications. Nick Krajewski CMPE /16/2005 ITRS: RF and Analog/Mixed- Signal Technologies for Wireless Communications Nick Krajewski CMPE 640 11/16/2005 Introduction 4 Working Groups within Wireless Analog and Mixed Signal (0.8 10 GHz) (Covered

More information

Audio, Dual-Matched NPN Transistor MAT12

Audio, Dual-Matched NPN Transistor MAT12 Data Sheet FEATURES Very low voltage noise: nv/ Hz maximum at 00 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μv maximum Outstanding offset voltage drift: 0.03 μv/ C typical

More information

Figure1: Basic BJT construction.

Figure1: Basic BJT construction. Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).

More information

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,

More information

Design of High Performance Lateral Schottky Structures using Technology CAD

Design of High Performance Lateral Schottky Structures using Technology CAD Design of High Performance Lateral Schottky Structures using Technology CAD A dissertation submitted in partial fulfillment of the requirement for the degree of Master of Science (Research) by Linga Reddy

More information

Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs

Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs Integrated Circuit Amplifiers Comparison of MOSFETs and BJTs 17 Typical CMOS Device Parameters 0.8 µm 0.25 µm 0.13 µm Parameter NMOS PMOS NMOS PMOS NMOS PMOS t ox (nm) 15 15 6 6 2.7 2.7 C ox (ff/µm 2 )

More information

Source: IC Layout Basics. Diodes

Source: IC Layout Basics. Diodes Source: IC Layout Basics C HAPTER 7 Diodes Chapter Preview Here s what you re going to see in this chapter: A diode is a PN junction How several types of diodes are built A look at some different uses

More information

Concepts to be Covered

Concepts to be Covered Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors

More information

Texas Instruments BQ29330 Battery Protection AFE from BQ20Z95DBT

Texas Instruments BQ29330 Battery Protection AFE from BQ20Z95DBT Texas Instruments BQ29330 Battery Protection AFE from BQ20Z95DBT Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor

More information

Determining BJT SPICE Parameters

Determining BJT SPICE Parameters Determining BJT SPICE Parameters Background Assume one wants to use SPICE to determine the frequency response for and for the amplifier below. Figure 1. Common-collector amplifier. After creating a schematic,

More information

Bipolar Junction Transistor (BJT) Basics- GATE Problems

Bipolar Junction Transistor (BJT) Basics- GATE Problems Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =

More information

NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR UPA806T FEATURES SMALL PACKAGE STYLE: NE685 Die in a mm x 1.5 mm package LOW NOISE FIGURE: NF = 1.5 db TYP at GHz HIGH GAIN: S1E = 8.5 db TYP at GHz HIGH GAIN BANDWIDTH:

More information

Surface Mount Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41411

Surface Mount Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-111 Features Low Noise Figure: 1. db Typical at 1. GHz 1.8 db Typical at 2. GHz High Associated Gain: 18. db Typical at 1. GHz

More information

4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions

4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions ELECTRONICS 4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions Yu SAITOH*, Toru HIYOSHI, Keiji WADA, Takeyoshi MASUDA, Takashi TSUNO and Yasuki MIKAMURA ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

More information

Structure-related Characteristics of SiGe HBT and 2.4 GHz Down-conversion Mixer

Structure-related Characteristics of SiGe HBT and 2.4 GHz Down-conversion Mixer 114 SANG-HEUNG LEE et al : STRUCTURE-RELATED CHARACTERISTICS OF SIGE HBT AND 2.4 GHZ DOWN-CONVERSION MIXER Structure-related Characteristics of SiGe HBT and 2.4 GHz Down-conversion Mixer Sang-Heung Lee,

More information

NEC's NPN SILICON TRAN SIS TOR PACKAGE OUTLINE M03

NEC's NPN SILICON TRAN SIS TOR PACKAGE OUTLINE M03 FEATURES MINIATURE M PACKAGE: Small tran sis tor outline Low profile /.9 mm package height Flat lead style for better RF performance IDEAL FOR > GHz OSCILLATORS LOW NOISE, HIGH GAIN LOW Cre UHSO GHz PROCESS

More information

Design cycle for MEMS

Design cycle for MEMS Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor

More information

Lecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1

Lecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1 Lecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1 LECTURE 190 CMOS TECHNOLOGY-COMPATIBLE DEVICES (READING: Text-Sec. 2.9) INTRODUCTION Objective The objective of this presentation is

More information

Texas Instruments THS7530PWP Gain Amplifier Structural Analysis

Texas Instruments THS7530PWP Gain Amplifier Structural Analysis March 1, 2005 Texas Instruments THS7530PWP Gain Amplifier Structural Analysis For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor

More information

High-Ohmic Resistors using Nanometer-Thin Pure-Boron Chemical-Vapour-Deposited Layers

High-Ohmic Resistors using Nanometer-Thin Pure-Boron Chemical-Vapour-Deposited Layers High-Ohmic Resistors using Nanometer-Thin Pure-Boron Chemical-Vapour-Deposited Layers Negin Golshani, Vahid Mohammadi, Siva Ramesh, Lis K. Nanver Delft University of Technology The Netherlands ESSDERC

More information

BJT Characteristics & Common Emitter Transistor Amplifier

BJT Characteristics & Common Emitter Transistor Amplifier LAB #07 Objectives 1. To graph the collector characteristics of a transistor. 2. To measure AC and DC voltages in a common-emitter amplifier. Theory BJT A bipolar (junction) transistor (BJT) is a three-terminal

More information

HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES PS2532-, -2, -4 PS2532L-, -2, -4 FEATURES HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN HIGH COLLECTOR TO EMITTER VOLTAGE

More information

APPLICATION NOTE. BV CEO Breakdown Measurements AN-124

APPLICATION NOTE. BV CEO Breakdown Measurements AN-124 APPLICATION NOTE AN-124 BV CEO Breakdown Measurements Overview Measuring BVCEO is tricky at any voltage, and is a slow test at low IC because any charge injected into the base when biasing the transistor

More information

Review of Power IC Technologies

Review of Power IC Technologies Review of Power IC Technologies Ettore Napoli Dept. Electronic and Telecommunication Engineering University of Napoli, Italy Introduction The integration of Power and control circuitry is desirable for

More information

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TWIN TRANSISTOR FEATURES LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE:. mm x.8 mm LOW HEIGHT PROFILE: Just. mm high TWO LOW NOISE OSCILLATOR TRANSISTORS: NE8 IDEAL FOR - GHz OSCILLATORS DESCRIPTION The contains

More information