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1 SEMICONDUCTOR TECHNICAL DATA Order his documen by MJE3007/D NPN Bipolar Power Transisor For Swiching Power Supply Applicaions The MJE/MJF3007 is designed for high volage, high speed power swiching inducive circuis where fall ime is criical. I is paricularly suied for 5 and 0 swichmode applicaions such as Swiching Regulaors, Inverers, Moor Conrols, Solenoid/Relay drivers and Deflecion circuis. CEO(sus) 400 Reverse Bias SOA wih Inducive TC = 00 C 700 Blocking Capabiliy SOA and Swiching Applicaions Informaion Two Package Choices: Sandard TO 0 or Isolaed TO 0 MJF3007 is UL Recognized o 3500 RMS, File #E69369 POWER TRANSISTOR 8.0 AMPERES 400 OLTS 80/40 WATTS MAXIMUM RATINGS Raing Symbol MJE3007 MJF3007 Uni Collecor Emier Susaining olage CEO 400 dc Collecor Emier Breakdown olage CES 700 dc Emier Base olage EBO 9.0 dc Collecor Curren Coninuous Collecor Curren Peak () Base Curren Coninuous Base Curren Peak () Emier Curren Coninuous Emier Curren Peak () RMS Isolaion olage (for sec, R.H. < 30%, TA = 5 C) Tes No. Per Fig. 5 Tes No. Per Fig. 6 Tes No. 3 Per Fig. 7 Proper srike and creepage disance mus be provided Toal Device TC = 5 C Derae above 5 C IC ICM IB IBM IE IEM ISOL PD * 0.3 Operaing and Sorage Temperaure TJ, Tsg 65 o 50 C THERMAL CHARACTERISTICS Thermal Resisance Juncion o Case Juncion o Ambien Maximum Lead Temperaure for Soldering Purposes: /8 from Case for 5 Seconds RθJC RθJA Adc Adc Adc Was W/ C C/W TL 60 C () Pulse Tes: Pulse Widh = 5.0 ms, Duy Cycle 0%. *Measuremen made wih hermocouple conacing he boom insulaed mounign surface of he *package (in a locaion beneah he die), he device mouned on a heasink wih hermal grease applied *a a mouning orque of 6 o 8 lbs. CASE A 06 TO 0AB MJE3007 CASE D 0 ISOLATED TO 0 TYPE UL RECOGNIZED MJF3007 Designer s Daa for Wors Case Condiions The Designer s Daa Shee permis he design of mos circuis enirely from he informaion presened. SOA Limi curves represening boundaries on device characerisics are given o faciliae wors case design. Designer s and SWITCHMODE are rademarks of Moorola, Inc. Moorola, Inc. 995 Moorola Bipolar Power Transisor Device Daa

2 ELECTRICAL CHARACTERISTICS (TC = 5 C unless oherwise noed) Characerisic Symbol Min Typ Max Uni *OFF CHARACTERISTICS Collecor Emier Susaining olage (IC = 0 ma, IB = 0) Collecor Cuoff Curren (CES = 700 dc) (CES = 700 dc, TC = 5 C) Emier Cuoff Curren (EB = 9.0 dc, IC = 0) CEO(sus) 400 dc ICES 0..0 madc IEBO 00 µadc SECOND BREAKDOWN Second Breakdown Collecor Curren wih Base Forward Biased IS/b See Figure 6 Clamped Inducive SOA wih Base Reverse Biased See Figure 7 *ON CHARACTERISTICS DC Curren Gain (IC =.0 Adc, CE = 5.0 dc) (IC = 5.0 Adc, CE = 5.0 dc) hfe Collecor Emier Sauraion olage (IC =.0 Adc, IB = 0.4 Adc) (IC = 5.0 Adc, IB =.0 Adc) (IC = 8.0 Adc, IB =.0 Adc) (IC = 5.0 Adc, IB =.0 Adc, TC = 00 C) CE(sa) dc Base Emier Sauraion olage (IC =.0 Adc, IB = 0.4 Adc) (IC = 5.0 Adc, IB =.0 Adc) (IC = 5.0 Adc, IB =.0 Adc, TC = 00 C) BE(sa)..6.5 dc DYNAMIC CHARACTERISTICS Curren Gain Bandwidh Produc (IC = 500 madc, CE = 0 dc, f =.0 MHz) Oupu Capaciance (CB = 0 dc, IE = 0, f = 0. MHz) ft MHz Cob 80 pf Collecor o Heasink Capaciance, MJF3007 Cc hs 3.0 pf SWITCHING CHARACTERISTICS Resisive Load (Table ) Delay Time d µs Rise Time (CC = 5 dc, IC = 5.0 A, r IB = IB =.0 A, p = 5 µs, Sorage Time Duy Cycle.0%) s Fall Time f Inducive Load, Clamped (Table ) olage Sorage Time CC = 5 dc, IC = 5.0 A TC = 5 C clamp = 300 dc TC = 00 C sv µs Crossover Time IB(on) =.0 A, IB(off) =.5 A TC = 5 C LC = 00 µh TC = 00 C c µs Fall Time TC = 5 C TC = 00 C fi µs * Pulse Tes: Pulse Widh 300 µs, Duy Cycle.0%. Moorola Bipolar Power Transisor Device Daa

3 BE(sa), BASE EMITTER SATURATION OLTAGE (OLTS) TC = 40 C 5 C 00 C IC/IB = IC, COLLECTOR CURRENT (AMPS) Figure. Base Emier Sauraion olage CE(sa), COLLECTOR EMITTER SATURATION OLTAGE (OLTS) TC = 40 C 5 C 00 C IC/IB = IC, COLLECTOR CURRENT (AMPS) Figure. Collecor Emier Sauraion olage CE, COLLECTOR EMITTER OLTAGE (OLTS) IC = 5 A IC = 3 A 0.5 IC = A TJ = 5 C IC = 8 A IB, BASE CURRENT (AMPS) Figure 3. Collecor Sauraion Region TJ = 00 C Cib TJ = 5 C h FE, DC CURRENT GAIN 0 5 C 40 C CE = 5 C, CAPACITANCE (pf) Cob IC, COLLECTOR CURRENT (AMPS) Figure 4. DC Curren Gain R, REERSE OLTAGE (OLTS) Figure 5. Capaciance Moorola Bipolar Power Transisor Device Daa 3

4 IC, COLLECTOR CURRENT (AMPS) TC = 5 C DC Exended µs, 0 µs 5 ms ms 0 µs 0. BONDING WIRE LIMIT 0. THERMAL LIMIT 0.05 SECOND BREAKDOWN LIMIT CURES APPLY BELOW 0.0 RATED O CE, COLLECTOR EMITTER OLTAGE (OLTS) Figure 6. Maximum Forward Bias Safe Operaing Area µs 000 IC, COLLECTOR CURRENT (AMPS) TC 00 C GAIN 4 LC = 500 µh BE(off) CE, COLLECTOR EMITTER CLAMP OLTAGE (OLTS) 5 Figure 7. Maximum Reverse Bias Swiching Safe Operaing Area POWER DERATING FACTOR THERMAL DERATING TC, CASE TEMPERATURE ( C) SECOND BREAKDOWN DERATING Figure 8. Forward Bias Power Deraing There are wo limiaions on he power handling abiliy of a ransisor: average juncion emperaure and second breakdown. Safe operaing area curves indicae IC CE limis of he ransisor ha mus be observed for reliable operaion; i.e., he ransisor mus no be subjeced o greaer dissipaion han he curves indicae. The daa of Figure 6 is based on TC = 5 C; TJ(pk) is variable depending on power level. Second breakdown pulse limis are valid for duy cycles o 0% bu mus be deraed when TC 5 C. Second breakdown limiaions do no derae he same as hermal limiaions. Allowable curren a he volages shown on Figure 6 may be found a any case emperaure by using he appropriae curve on Figure 8. A high case emperaures, hermal limiaions will reduce he power ha can be handled o values less han he limiaions imposed by second breakdown. Use of reverse biased safe operaing area daa (Figure 7) is discussed in he applicaions informaion secion. r(), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 D = 0. D = RθJC() = r() RθJC 0.07 D = 0.05 P(pk) RθJC =.56 C/W MAX 0.05 D = 0.0 D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT 0.0 D = 0.0 DUTY CYCLE, D = / TJ(pk) TC = P(pk) RθJC() SINGLE PULSE k, TIME (msec) Figure 9. Typical Thermal Response for MJE Moorola Bipolar Power Transisor Device Daa

5 r(), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 D = 0. D = 0. D = 0.05 SINGLE PULSE K K 3K 5K 0K 0K 30K 50K 00K P(pk), TIME (msec) DUTY CYCLE, D = / RθJC() = r() RθJC RθJC = 3. C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT TJ(pk) TC = P(pk) RθJC() Figure 0. Typical Thermal Response for MJF3007 SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS INTRODUCTION The primary consideraions when selecing a power ransisor for SWITCHMODE applicaions are volage and curren raings, swiching speed, and energy handling capabiliy. In his secion, hese specificaions will be discussed and relaed o he circui examples illusraed in Table.() OLTAGE REQUIREMENTS Boh blocking volage and susaining volage are imporan in SWITCHMODE applicaions. Circuis B and C in Table illusrae applicaions ha require high blocking volage capabiliy. In boh circuis he swiching ransisor is subjeced o volages subsanially higher han CC afer he device is compleely off (see load line diagrams a IC = Ileakage 0 in Table ). The blocking capabiliy a his poin depends on he base o emier condiions and he device juncion emperaure. Since he highes device capabiliy occurs when he base o emier juncion is reverse biased (CE), his is he recommended and specified use condiion. Maximum ICE a raed CE is specified a a relaively low reverse bias (.5 ols) boh a 5 C and 00 C. Increasing he reverse bias will give some improvemen in device blocking capabiliy. The susaining or acive region volage requiremens in swiching applicaions occur during urn on and urn off. If he load conains a significan capaciive componen, high curren and volage can exis simulaneously during urn on and he pulsed forward bias SOA curves (Figure 6) are he proper design limis. For inducive loads, high volage and curren mus be susained simulaneously during urn off, in mos cases, wih he base o emier juncion reverse biased. Under hese condiions he collecor volage mus be held o a safe level a or below a specific value of collecor curren. This can be accomplished by several means such as acive clamping, RC snubbing, load line shaping, ec. The safe level for hese devices is specified as a Reverse Bias Safe Operaing Area (Figure 7) which represens volage curren condiions ha can be susained during reverse biased urn off. This raing is verified under clamped condiions so ha he device is never subjeced o an avalanche mode. () For deailed informaion on specific swiching applicaions, see () Moorola Applicaion Noe AN79, AN873, AN875, AN95. Moorola Bipolar Power Transisor Device Daa 5

6 Table. Tes Condiions For Dynamic Performance REERSE BIAS SAFE OPERATING AREA AND INDUCTIE SWITCHING RESISTIE SWITCHING TEST CIRCUITS +5 µf MPF Ω COMMON 500 µf off 50 Ω 3 W 00 Ω 3 W MPF Ω 3 W MTP8P0 MTP8P0 MUR05 R B MJE0 R B MTPN0 A µf 00 µf I B I B TUT L MUR800E clamp = 300 dc 5. k 5 R B TUT D 4 +5 R C SCOPE CIRCUIT ALUES (BR)CEO(sus) L = 0 mh R B = 8 = 0 ols (pk) = 00 ma Inducive Swiching L = 00 mh R B = 0 = 5 ols R B seleced for desired I B RBSOA L = 500 mh R B = 0 = 5 ols R B seleced for desired I B = 5 R C = 5 Ω D = N580 OR EQUI. TEST WAEFORMS TYPICAL f ADJUSTED TO WAEFORMS 5 µs CLAMPED f UNCLAMPED OBTAIN L coil (M ) + M PEAK f L coil (M ) CE 0 clamp I B 9 M clamp r, f < 0 ns TEST EQUIPMENT I B DUTY CYCLE =.0% SCOPE TEKTRONIX R B AND R C ADJUSTED TIME 475 OR EQUIALENT FOR DESIRED I B AND I B OLTAGE REQUIREMENTS (coninued) In he four applicaion examples (Table ) load lines are shown in relaion o he pulsed forward and reverse biased SOA curves. In circuis A and D, inducive reacance is clamped by he diodes shown. In circuis B and C he volage is clamped by he oupu recifiers, however, he volage induced in he primary leakage inducance is no clamped by hese diodes and could be large enough o desroy he device. A snubber nework or an addiional clamp may be required o keep he urn off load line wihin he Reverse Bias SOA curve. Load lines ha fall wihin he pulsed forward biased SOA curve during urn on and wihin he reverse bias SOA curve during urn off are considered safe, wih he following assumpions: () The device hermal limiaions are no exceeded. () The urn on ime does no exceed 0 µs (see sandard pulsed forward SOA curves in Figure 6). (3) The base drive condiions are wihin he specified limis shown on he Reverse Bias SOA curve (Figure 7). CURRENT REQUIREMENTS An efficien swiching ransisor mus operae a he required curren level wih good fall ime, high energy handling capabiliy and low sauraion volage. On his daa shee, hese parameers have been specified a 5.0 amperes which represens ypical design condiions for hese devices. The curren drive requiremens are usually dicaed by he CE(sa) specificaion because he maximum sauraion volage is specified a a forced gain condiion which mus be duplicaed or exceeded in he applicaion o conrol he sauraion volage. SWITCHING REQUIREMENTS In many swiching applicaions, a major porion of he ransisor power dissipaion occurs during he fall ime (fi). For his reason considerable effor is usually devoed o reducing he fall ime. The recommended way o accomplish his is o reverse bias he base emier juncion during urn off. The reverse biased swiching characerisics for inducive loads are shown in Figures 3 and 4 and resisive loads in Figures and. Usually he inducive load componens will be he dominan facor in SWITCHMODE applicaions and he inducive swiching daa will more closely represen he device performance in acual applicaion. The inducive swiching characerisics are derived from he same circui used o specify he reverse biased SOA curves, (see Table ) providing correlaion beween es procedures and acual use condiions. 6 Moorola Bipolar Power Transisor Device Daa

7 SWITCHING TIME NOTES In resisive swiching circuis, rise, fall, and sorage imes have been defined and apply o boh curren and volage waveforms since hey are in phase. However, for inducive loads which are common o SWITCHMODE power supplies and any coil driver, curren and volage waveforms are no in phase. Therefore, separae measuremens mus be made on each waveform o deermine he oal swiching ime. For his reason, he following new erms have been defined. sv = olage Sorage Time, 90% IB o 0% clamp rv = olage Rise Time, 0 90% clamp fi = Curren Fall Time, 90 0% IC i = Curren Tail, 0 % IC c = Crossover Time, 0% clamp o 0% IC An enlarged porion of he urn off waveforms is shown in Figure 3 o aid in he visual ideniy of hese erms. For he designer, here is minimal swiching loss during sorage ime and he predominan swiching power losses occur during he crossover inerval and can be obained using he sandard equaion from ANA: PSWT = / CCIC(c) f Typical inducive swiching imes are shown in Figure 4. In general, rv + fi c. However, a lower es currens his relaionship may no be valid. As is common wih mos swiching ransisors, resisive swiching is specified a 5 C and has become a benchmark for designers. However, for designers of high frequency converer circuis, he user oriened specificaions which make his a SWITCHMODE ransisor are he inducive swiching speeds (c and sv) which are guaraneed a 00 C. SWITCHING PERFORMANCE, TIME (ns) CC = 5 IC/IB = 5 IB(on) = IB(off) TJ = 5 C PW = 5 µs r, TIME (ns) s CC = 5 IC/IB = 5 IB(on) = IB(off) TJ = 5 C PW = 5 µs d IC, COLLECTOR CURRENT (AMP) Figure. Turn On Time (Resisive Load) f IC, COLLECTOR CURRENT (AMP) Figure. Turn Off Time (Resisive Load) IC IB clamp 90% IB 90% clamp 90% IC sv rv fi i 0% clamp c 0% clamp %, TIME (ns) IC/IB = 5 IB(off) = IC/ clamp = 300 LC = 00 µh CC = 5 TJ = 5 C sv fi c TIME Figure 3. Inducive Swiching Measuremens IC, COLLECTOR CURRENT (AMP) Figure 4. Typical Inducive Swiching Times Moorola Bipolar Power Transisor Device Daa 7

8 Table. Applicaions Examples of Swiching Circuis CIRCUIT LOAD LINE DIAGRAMS TIME DIAGRAMS A SERIES SWITCHING REGULATOR O COLLECTOR CURRENT 6 A T C = 00 C 8 A TURN ON + TURN OFF TURN ON (FORWARD BIAS) SOA on 0 µs DUTY CYCLE 0% P D = 300 W 400 COLLECTOR OLTAGE Noes: See AN569 for Pulse Power Deraing Procedure. 300 TURN OFF (REERSE BIAS) SOA.5 BE(off) DUTY CYCLE 0% on off TIME TIME FLYBACK INERTER 6 A TURN ON (FORWARD BIAS) SOA on 0 µs DUTY CYCLE 0% B N O COLLECTOR CURRENT 8 A T C = 00 C + TURN OFF TURN ON P D = 300 W Noes: CC + N ( o ) COLLECTOR OLTAGE See AN569 for Pulse Power Deraing Procedure. + N ( o ) + LEAKAGE SPIKE TURN OFF (REERSE BIAS) SOA.5 BE(off) 9 DUTY CYCLE 0% + N ( o ) off on LEAKAGE SPIKE C PUSH PULL INERTER/CONERTER O COLLECTOR CURRENT 6 A T C = 00 C 8 A + TURN ON TURN OFF TURN ON (FORWARD BIAS) SOA on 0 µs DUTY CYCLE 0% P D = 300 W TURN OFF (REERSE BIAS) SOA.5 BE(off) 9 COLLECTOR OLTAGE Noes: See AN569 for Pulse Power Deraing Procedure. DUTY CYCLE 0% 700 on off SOLENOID DRIER 6 A TURN ON (FORWARD BIAS) SOA on 0 µs DUTY CYCLE 0% D SOLENOID COLLECTOR CURRENT T C = 00 C 8 A TURN OFF TURN ON P D = 300 W 300 TURN OFF (REERSE BIAS) SOA.5 BE(off) 9 DUTY CYCLE 0% on off COLLECTOR OLTAGE Noes: See AN569 for Pulse Power Deraing Procedure Moorola Bipolar Power Transisor Device Daa

9 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP MOUNTED FULLY ISOLATED PACKAGE 0.07 MIN MOUNTED FULLY ISOLATED PACKAGE 0.07 MIN LEADS LEADS LEADS HEATSINK HEATSINK HEATSINK 0.0 MIN Figure 5. Screw or Clip Mouning Posiion for Isolaion Tes Number Figure 6. Clip Mouning Posiion for Isolaion Tes Number Figure 7. Screw Mouning Posiion for Isolaion Tes Number 3 * Measuremen made beween leads and heasink wih all leads shored ogeher MOUNTING INFORMATION 4 40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 8. Typical Mouning Techniques for Isolaed Package Laboraory ess on a limied number of samples indicae, when using he screw and compression washer mouning echnique, a screw orque of 6 o 8 in. lbs is sufficien o provide maximum power dissipaion capabiliy. The compression washer helps o mainain a consan pressure on he package over ime and during large emperaure excursions. Desrucive laboraory ess show ha using a hex head 4 40 screw, wihou washers, and applying a orque in excess of 0 in. lbs will cause he plasic o crack around he mouning hole, resuling in a loss of isolaion capabiliy. Addiional ess on sloed 4 40 screws indicae ha he screw slo fails beween 5 o 0 in. lbs wihou adversely affecing he package. However, in order o posiively ensure he package inegriy of he fully isolaed device, Moorola does no recommend exceeding 0 in. lbs of mouning orque under any mouning condiions. ** For more informaion abou mouning power semiconducors see Applicaion Noe AN040. Moorola reserves he righ o make changes wihou furher noice o any producs herein. Moorola makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does Moorola assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion consequenial or incidenal damages. Typical parameers can and do vary in differen applicaions. All operaing parameers, including Typicals mus be validaed for each cusomer applicaion by cusomer s echnical expers. Moorola does no convey any license under is paen righs nor he righs of ohers. Moorola producs are no designed, inended, or auhorized for use as componens in sysems inended for surgical implan ino he body, or oher applicaions inended o suppor or susain life, or for any oher applicaion in which he failure of he Moorola produc could creae a siuaion where personal injury or deah may occur. Should Buyer purchase or use Moorola producs for any such uninended or unauhorized applicaion, Buyer shall indemnify and hold Moorola and is officers, employees, subsidiaries, affiliaes, and disribuors harmless agains all claims, coss, damages, and expenses, and reasonable aorney fees arising ou of, direcly or indirecly, any claim of personal injury or deah associaed wih such uninended or unauhorized use, even if such claim alleges ha Moorola was negligen regarding he design or manufacure of he par. Moorola and are regisered rademarks of Moorola, Inc. Moorola, Inc. is an Equal Opporuniy/Affirmaive Acion Employer. Moorola Bipolar Power Transisor Device Daa 9

10 PACKAGE DIMENSIONS H Q Z L G B 4 3 N D A K F T U R J S C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U Z STYLE : PIN. BASE. COLLECTOR 3. EMITTER 4. COLLECTOR CASE A 06 TO 0AB ISSUE Y A K F Q H B 3 G N L D 3 PL Y U 0.5 (0.00) M B M Y C T S J R SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G 0.00 BSC.54 BSC H J K L N 0.00 BSC 5.08 BSC Q R S U STYLE : PIN. BASE. COLLECTOR 3. EMITTER CASE D 0 ISOLATED TO 0 TYPE ISSUE D How o reach us: USA / EUROPE: Moorola Lieraure Disribuion; JAPAN: Nippon Moorola Ld.; Tasumi SPD JLDC, Toshikasu Osuki, P.O. Box 09; Phoenix, Arizona F Seibu Busuryu Cener, 3 4 Tasumi Koo Ku, Tokyo 35, Japan MFAX: RMFAX0@ .sps.mo.com TOUCHTONE (60) HONG KONG: Moorola Semiconducors H.K. Ld.; 8B Tai Ping Indusrial Park, INTERNET: hp://design NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong Moorola Bipolar Power Transisor Device Daa MJE3007/D

D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 83 W

D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 83 W D44VH (NPN), D45VH (PNP) Complemenary Silicon Power Transisors These complemenary silicon power ransisors are designed for highspeed swiching applicaions, such as swiching regulaors and high frequency