EUVL Challenges for Next Generation Devices

Transcription

1 EUVL Challenges for Next Generation Devices Center for Semiconductor Research & Development Advanced Lithography Process Technology Dept. Tatsuhiko Higashiki

2 Contents Device Roadmap and Lithography Extendibility toward 1x nm hp and beyond with New Lithography SAxP EUVL EUVL+DSA Conclusion 2

3 Contents Device Roadmap and Lithography Extendibility toward 1x nm hp and beyond with New Lithography SAxP EUVL EUVL+DSA Conclusion 3

4 Rapid Increase of Information Volume Demand All information that is created, captured, replicated and/or consumed by all human on the planet. 40ZB 1ZB=1,000,000,000,000,000,000,000=10^21B 20ZB All information is not fully stored, but partially stored. Need for larger-capacity memory in the future. 4

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6 Roadmap of the Memory CG CG CG STI FG FG FG FG STI FG FG FG STI FG FG FG NAND BiCS Cross Point 6

7 More than Moore Lithography Challenges ArF im NA>1~1.35 Light Source EUVL NA0.32 >0.4x? ArF im SADP More Moore hp56nm hp43nm hp32nm hp2xnm hp1xnm hp0xnm Tool Defect ML2 NIL Resist, Mask, Inspection, etc Cost EUVL+SADP EUVL+DSA ArF imsaqp/saop? Arf im SAQP+DSA NIL+DSA Performance & Economics ML2+DSA SADP : self-aligned double patterning SAQP : self-aligned quadruple patterning SAOP : self-aligned octuplet patterning 7

8 Contents Device Roadmap and Lithography Extendibility toward 1x nm hp and beyond with New Lithography SAxP EUVL EUVL+DSA Conclusion 8

9 More than Moore Lithography Challenges ArF im NA>1~1.35 Light Source EUVL NA0.32 >0.4x? ArF im SADP More Moore hp56nm hp43nm hp32nm hp2xnm hp1xnm hp0xnm Tool Defect ML2 NIL Resist, Mask, Inspection, etc Cost EUVL+SADP EUVL+DSA ArF imsaqp/saop? Arf im SAQP+DSA NIL+DSA Performance & Economics ML2+DSA SADP : self-aligned double patterning SAQP : self-aligned quadruple patterning SAOP : self-aligned octuplet patterning 9

10 Single Exposure by Mask Technology Revolution SADP Mask (Template) EUVL single single Litho. Exposed Slimming Film depo. etching etching Processed 10

11 CoO ( /wf) CoO ( /wf) Cycle time can not be described on CoO Single Exposure DPT Patterning Δ Cycle time Patterning Cycle time DPT Economical Problems Investment Cost (LP, Etching, M&I, etc.) Mask Cost Opportunity Cost ( Time is money ) Ref T.Higashiki ConFab2010(June) 11

12 Contents Device Roadmap and Lithography Extendibility toward 1x nm hp and beyond with New Lithography SAxP EUVL EUVL+DSA Conclusion 12

13 More than Moore Lithography Challenges ArF im NA>1~1.35 Light Source EUVL NA0.32 >0.4x? ArF im SADP More Moore hp56nm hp43nm hp32nm hp2xnm hp1xnm hp0xnm Tool Defect ML2 NIL Resist, Mask, Inspection, etc Cost EUVL+SADP EUVL+DSA ArF imsaqp/saop? Arf im SAQP+DSA NIL+DSA Performance & Economics ML2+DSA SADP : self-aligned double patterning SAQP : self-aligned quadruple patterning SAOP : self-aligned octuplet patterning 13

14 EUVL Challenges for NAND Memory Mask Defect Control DD<0.1/cm2 Inspection ABI(Actinic Blanks Inspection) PI(Pattern Inspection) Inspection after Pattern Repairing Resist Performance Resolution<hp16nm,LWR<2nm,Photo Speed<20mj/cm2,Difectivity<0.1/cm2 Light Source Performance Enough Power for Throughput>150wph Operational Cost (Mirror, E Power, DMT, etc) 14

15 Ref, EIDEC Symposium

16 EUV Collaboration Device & design Si Process Lithography Pattern Layout Tech. (OPC/DFM) Specification Design for Tools Mask process Resist process Advanced EUVL Mask Quality Mask Inspections Resist Quality High NA Exposure EUVL+DSA Suppliers Exposure Tool EDA Resist Material Mask Metrology and Inspection 16

17 Structure of EUVL Mask EUV Mask Section and Defects Absorber Reflective Multilayer Phase Defect Pattern Defect Damage after repairing Ref T.Higashiki ConFab2010(June) 17

18 Ref H.Watanabe, EIDEC Symposium

19 EB inspection tool Detector Electron Gun EUV Mask EUV Mask Detector: TDI Sensor Electron Gun Projection Electron Microscope EBeyeM EUV Mask Continuous Moving (Y) Stepping (X) 19

20 Quality assurance of hotspot & repaired pattern EUV AIMS operation will be difficult in D SEM + Litho. Simulation will be applied. -5deg top-down +5deg Top-down & tilted SEM images of mask pattern Prediction of wafer image 3D mask image Lithography simulation 20

21 Toshiba Technology Scenario for EUV Mask Multilayer defect inspection Patterned mask inspection Defect repair HP 2Xnm DUV inspection DUV inspection EB repair HP 1Xnm Actinic inspection EB inspection Hotspot & repaired pattern assurance Particle inspection Litho. Sim. w/ 3D mask image EB inspection ready under developing EUV-AIMS 21

22 Rinse Suction Developing Solution Suction Rinse EB writer : EBM8000 (NuFlare) Absorber Pattern Generation Scanning-type Developer : PGSD Proximity-Gap-Suction-Development System (Tokyo Electron) Scan Dry Etching Equipment : ARES TM (Shibaura Mechatronics) product/ebm.html 44nm (4x) L&S Slit and scan type development Narrow gap Suction slits for removing dissolution products Scan Mask Mask Stage PGSD Nozzle TaBO TaBN Ru 90(deg) CDU of 44nm (4x) L&S : 1.7nm (3sigma) Gap Sensor Iino, et al. (BACUS2010) Developing Area Cross-sectional view Gap Mask Extreme high uniformity of developing solution supply Nearly zero loading effect caused by dissolution products Etched absorber pattern has capability for scaling down to hp1x EUVL single exposure. 22

23 SMRAT Network of Mask & Lithography Toshiba R&D Center DTF Mask House (EUVL Infrastructure Development Center) Mask Inspections High Performance Resist Sub-10nm DSA material EB Writer Inspection Cleaning Tech. Etching Toshiba Advanced Litho.& Mask Dept. Advance Mask & Litho Computational Litho OPC/DFM Next Emerging Litho. Toshiba Confidential 23

24 Resolution Limit of EUVL Depend on Resist Performance 24

25 EUVL and SADP Complementally dteos 加工後 hp14nm Exposure was Realized by EUVL + SADP EUVL Resist 28nm Spacer Film 14nm Si ウェハ hp28nm Spacer hp14nm Y. Watanabe et al, Photomask Japan 2010(April) 25

26 Contents Device Roadmap and Lithography Extendibility toward 1x nm hp and beyond with New Lithography SAxP EUVL EUVL+DSA Conclusion 26

27 More than Moore Lithography Challenges ArF im NA>1~1.35 Light Source EUVL NA0.32 >0.4x? ArF im SADP More Moore hp56nm hp43nm hp32nm hp2xnm hp1xnm hp0xnm Tool Defect ML2 NIL Resist, Mask, Inspection, etc Cost EUVL+SADP EUVL+DSA ArF imsaqp/saop? Arf im SAQP+DSA NIL+DSA Performance & Economics ML2+DSA SADP : self-aligned double patterning SAQP : self-aligned quadruple patterning SAOP : self-aligned octuplet patterning 27

28 EUV Collaboration Device & design Si Process Lithography Pattern Layout Tech. (OPC/DFM) Specification Design for Tools Mask process Resist process Advanced EUVL Mask Quality Mask Inspections Resist Quality High NA Exposure EUVL+DSA Suppliers Exposure Tool EDA Resist Material Mask Metrology and Inspection 28

29 DSA(Directed Self Assembly) Change in Size Molecular Weight B polymer Spherical Cylindrical Bicontinuos Lamella A polymer Composition Change in Structure Hydrophilic Hydrophobic Chemical bond DSA Molecule Micro-Phase Separated Structures of Block-copolymer K. Asakawa, T. Hiraoka, Jpn. J. Appl. Phys. vol.41, 6112 (2002). 29

30 DSA (Directed Self Assembly) Hydrophobic (PS) Hydrophilic (PMMA) BCP: Block copolymer Line & Space Contact Hole 30

31 Grapho-Epitaxy & Chemo-Epitaxy Segalmann et al., Adv.Mater. 3,1152(2001) Nato et al., IEEE Trans. Magn.38,1949(2002) Chen et al.,appl.phys.lett.81,3657(2002) Chen et al.,adv.mater. 20,3155(2008) Rulz et al., Science, 321,936(2008) Tada, Macromol.41,9267(2008) 31

32 Guide Hole vs. DSA Hole Guide hole DSA hole Ave. CD 72.1nm Ave. CD 28.5nm 3sigma 7.6nm 3sigma 1.3nm Ref.Y.Seino, SPIE Advanced Lithography

33 DSA OPC/DfM/APC Flow OPC EDA Tool DfM Model Condition (material/process) APC Layout Guide Data OPC Litho Simulation GDS DSA Simulation HotSpot result Judge Wafer Process FeedBack EDA Tool FeedForward 33

34 Prediction Accuracy DSA Simulation Model Shroedinger's Equation etc Rigorous Model Impractical model (<0.25nm) Target (5nm) TAT (? years/10μm2) SCF DPD TAT (5h/10μm2) TAT (1m/10μm2) speed Model Self Consistent mean Field Dissipative Particle Dynamics methodology Based on statistical field theory Challenge Modeling of thermal fluctuations Based on Newton's motion equation Difficult to fit to a measured data 34

35 Molecular Dynamics based DSA Simulation Model Coarse Grained MD DPD(Dissipative Particle Dynamics) Coarse Graining Available Free Software Tools are; LAMMPS /GROMAX/ OCTA-COGNAC,, Dissipative Force Brownian Motion Repulsive Force Solvent Δvelocity Beads Spring Spring Force 35

36 Challenges for DSA Lithography High performance DSA material High χ material Resolution, LWR/LER, Etching Long term stability Robust material and tool for environmental control such as surface energy stability, temperature, humidity, pressure and PH, etc. Defectivity, CD and overlay accuracy Development of molecular dynamics based DSA simulator More accurate simulation model BCP and related molecular design Microphase separation (2D/3D) TAT / accuracy trade-off DSA OPC/DFM technology Design rule verification DSA and guide patterning (litho/wet/dry) Metrology & Inspection Metrology for 3D profile Inspection technology for 1xnmhp and beyond needs to overcome throughput / accuracy / sensitivity trade-off. 36

37 Contents Device Roadmap and Lithography Extendibility toward 1x nm hp and beyond with New Lithography SAxP EUVL EUVL+DSA Conclusion 37

38 Conclusion Economical factor is dominant criteria for a lithography strategy For Memory Device; Throughput, Investment & Si Process Cost For Logic Device ; Mask Cost, Cycle Time EUVL Moving from R&D phase to production Light source performance is improving, but a significant concern. DSA DSA will be a complementary technology for all other lithography EUVL+DSA will be one of candidates for sub 10nm lithography. Next Challenges Next generation lithography will depend on innovation of infrastructure technologies such as OPC, DFM, M&I, etching and cleaning. 38

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