EUV Actinic Blank Inspection Tool Development

Transcription

1 EUV Actinic Blank Inspection Tool Development EUVL Symposium 2011 Hiroki Miyai 1, Tomohiro Suzuki 1, Kiwamu Takehisa 1, Haruhiko Kusunose 1, Takeshi Yamane 2, Tsuneo Terasawa 2, Hidehiro Watanabe 2, Soichi Inoue 2, Ichiro Mori 2 1 Lasertec Corporation 2 EUVL Infrastructure Development Center 1

2 Contents 1. Introduction 2. ABI program status 3. ABI tool Design 4. Defect coordinate accuracy 5. Summary 2

3 ABI HVM tool development An ABI HVM (Actinic Blank Inspection for High Volume Manufacturing) tool will be developed, by taking over the concept of principle verification for the dark field ABI tool accomplished by MIRAI Project(I,II,III). The development of the ABI HVM tool will be implemented under the Blank Inspection Technology Program of EIDEC. - Co-development of Lasertec and EIDEC - Commercialization of a HVM tool for 16 nm in MIRAI (I, II, III) Concept tool (MIRAI I, II) Full-field prototype (MIRAI III/Selete) Technology Transfer Lasertec (M1350, M7360) EIDEC BI program HVM Prototype for 16 nm 3

4 Actinic blank inspection for HVM Principle Verification Accomplishment Phase defect management as customer needs ABI HVM tool Lasertec standard technology for blanks inspection Lasertec, under the support of EIDEC, transforms the actinic blanks inspection concept verified by the MIRAI project to a commercial tool. The tool will enable the phase defect management. 4

5 Lasertec EUV tools The Actinic Blank Inspection tool will be newly added to the Lasertec product line for EUVL technology Actinic Blank Inspection MAGICS Mask blank inspection tool MATRICS Mask pattern inspection tool Oct. 17th, 2011 EUVL symposium 5 DP200 Dual Pod Handling tool

6 Mask blank inspection target performance Sensitivity (nm) ABI HVM 11nm hp W:35nm H:0.7nm ABI HVM 16nm hp W:50nm H: 1.0nm MIRAI/Selete ABI W:55nm H: 1.0nm ABI HVM tool for 16nm Actinic tool (phase defect) Inspection time (min.) 300 6

7 1. Introduction 2. ABI program status 3. ABI tool Design 4. Defect coordinate accuracy 5. Summary 7

8 ABI HVM 16nm specification Mask inspection Inspection time Attribute Item Defect Sensitivity - Phase Defects Defect location accuracy by compensation using the fiducial mark position Defect observation (Review) Optical Magnification Cleanliness The number of particles:>=50 nm Specification 6 inch EUVL mask Inspection area : 142mm X 142mm <= 45 minutes Minimum detectable defect on top of ML. Height 1 nm; Width 50nm (FWHM) Target < 1μm An optional review optics targeting the location accuracy of 20 nm will be developed. Available Inspection : 26X Review mode : >600X (at the planning phase) 10 cycle with 0 adder 8

9 ABI tool schedule EIDEC Lasertec Blank Inspection project design manufacturing assembling / adjustment evaluation / development EIDEC BI program started improvement Prototype tool for HVM 16nm hp development HVM 11nm hp ABI HVM for 16nm will be released in

10 1. Introduction 2. ABI program status 3. ABI tool Design 4. Defect coordinate accuracy 5. Summary 10

11 ABI Tool Design -- tool size : 4m x 5m EUV source Main Unit Main chamber + stage CCD Optics Load lock unit Robot Load lock Cassette opener Unit Robot Cassette Port Cassette Port Control systems Operator console ABI tool image ABI tool configuration 11

12 ABI inspection optics TDI Illumination optics Schwarzschild optics -- 26X -- Inner NA 0.1 Outer NA Field size at mask 460 μm EUV Source EUV Filter EUV mask blank 1. Dark field inspection --- High throughput --- High sensitivity 2. Actinic inspection --- Detect printable phase defect 12

13 Realization of high brightness at mask surface 1. Employment of a new EUV source Actual measurement evaluation test was performed with a EUV power measurement system. EUV Source EUV source performance comparison MIRAI/Selete ABI HVM 16nm EUV power 1 2 ~ 4 Multi-layer mirror Zr Filter Photo Diode EUV power measurement system Etendue Brightness Fluctuation ~ ~ Application of a new illumination optics ~ 2X higher EUV transmission is expected. 4-8 X higher Brightness at mask surface is expected. 13

14 1. Introduction 2. ABI program status 3. ABI tool Design 4. Defect coordinate accuracy 5. Summary 14

15 Specification of the defect coordinate accuracy The ABI tool requires the defect coordinate accuracy of 20 nm for the defect mitigation of blanks. The resolution limit needs to be smaller than the pixel size. Pixel size 460nm Pixel size < 20nm Difficult to specify a defect position with accuracy that is lower than the pixel size Low magnification : 26X (inspection) High magnification : > 600X Defect position can be specified with the required accuracy of 20 nm The relationship between the pixel size and the defect size. 15

16 High magnification review optics The ABI tool will perform defect position measurement of 20 nm. -- For inspection, the 26X Schwarzschild optics is used prioritizing the throughput. -- For review, a switch mirror is inserted into the optical path and observation is performed under the high magnification of > 600X. -- Defect position is accurately measured by referencing the fiducial mark. Two optional mirrors can be installed TDI Switch mirror Concave mirror M2 = b a >23 Schwarzschild optics M1 = 26 Mask Inspection Mode (26X) Review mode ( M1 M2 > 600X) 16

17 Simulation of the review optics Simulated spot diagrams of the 26X Schwarzschild optics (0.48x0.48mm) Focus adjust at field center 50um at TDI Center of the field is used for review A simulation image of the review optics at the magnification of 1200X 10nm at mask φ10nm Dot 1200X On mask 17 On TDI

18 1. Introduction 2. ABI program status 3. ABI tool Design 4. Defect coordinate accuracy 5. Summary 18

19 1. Lasertec develops an ABI HVM tool under the Blank Inspection Technology Program of EIDEC. 2. The ABI tool development status: -- The basic design of the ABI tool has been completed -- The tool is currently under fabrication. -- Assembly of the unit will start in December Higher throughput and sensitivity are accomplished by brighter illumination. 4. A high magnification review optics realizes the required defect location accuracy. 19

20 We would like to thank: -- all the members of the EIDEC BI program This work was supported by New Energy and Industrial Technology Development Organization (NEDO) and Japan Ministry of Economy, Trade and Industry METI. 20