PUSHING LITHOGRAPHY TO ENABLE ULTIMATE NANO-ELECTRONICS. LUC VAN DEN HOVE President & CEO imec

Transcription

1 PUSHING LITHOGRAPHY TO ENABLE ULTIMATE NANO-ELECTRONICS LUC VAN DEN HOVE President & CEO imec

2 OUTLINE! Industry drivers! Roadmap extension! Lithography options! Innovation through global collaboration imec 2010

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7 Experience the world wherever you are Computer Communication Consumer Connected World Computer Always connected Virtual Social Networks (Facebook, LinkedIn, Twitter, You Tube...)

8 Experience the world wherever you are Video to dominate mobile data traffic Total mobile data traffic (Tetabyte per month) 2,000,000 1,500,000 1,000, ,000 Global mobile data traffic, by type 7% E 2010E 2011E 2012E 2013E Source: Morgan Stanley Data Ubiquitous Connectivity 10% P2P Video + Ultimate Graphics 19% 3D 64% Video Voice NVIDIA

9 Computing Communication Consumer

10 Computing Communication Consumer Lifestyle Healthcare

11 BUSY LIFESTYLE 1 billion overweight people 300 million of those are obese

12 AGING POPULATION 600 million persons 60+ Expected to double by 2025

13 RISE IN CHRONIC DISEASES 600 million people worldwide $500 billion a year (US) $685 billion by 2020 (US)

14 MEDICINE GOES DIGITAL PERSONALIZED - PREDICTIVE - PREVENTIVE

15 WEARABLE HEALTH AND COMFORT MONITORING internet doctor hospital Anywhere, anytime Connected health Health and lifestyle

16 WEARABLE HEALTH AND COMFORT MONITORING ECG NECKLACE FOR AMBULATORY APPLICATIONS

17 WEARABLE HEALTH AND COMFORT MONITORING

18 BOOSTING CHIP PERFORMANCE AND SYSTEM FUNCTIONALITY TERAFLOP TERABIT MORE FUNCTIONALITY

19 BOOSTING CHIP PERFORMANCE AND SYSTEM FUNCTIONALITY TERAFLOP TERABIT MORE FUNCTIONALITY

20 RELENTLESS SCALING ~ 90 nm Lithography Enabled Scaling STOP Geometric (Dennard s Law) Scale: tox, Lg, xj,...

21 RELENTLESS SCALING ~ 90 nm Lithography Enabled Scaling Geometric (Dennard s Law) Materials Enabled Scaling Scale: tox, Lg, xj,...

22 RELENTLESS SCALING ~ 90 nm Lithography Enabled Scaling Materials Enabled Scaling Metal gate High-k Intel High mobility SiGe channel

23 RELENTLESS SCALING ~ 90 nm ~ 15nm Lithography Enabled Scaling Materials Enabled Scaling Fin Fin poly-si Strained Si High-k Metal Gate Multi Gate FINFET

24 RELENTLESS SCALING ~ 90 nm ~ 15nm Lithography Enabled Scaling Materials Enabled Scaling

25 EXTREME HIGH MOBILITY CHANNELS

26 EXTREME HIGH MOBILITY CHANNELS

27 RELENTLESS SCALING Lithography Enabled Scaling Materials Enabled Scaling 3D Enabled Scaling From Plane to Cube

28 3D STACKED ICs CONNECTED THROUGH TSVs Top die 10um 10um 25um 25um 5um Top tier Bottom tier Bottom die Cu - Cu bonding

29 PERFORMANCE MOBILE SYSTEMS E.g., Netbooks Cost, Power, Form factor, Performance REUSE COMPUTE SYSTEMS E.g., Routers, Severs Performance, Power efficiency, heat dissipation, Reliability 3D Integration & advanced packaging CONSUMER E.g., micro-servers Power, Cost, Performance, Form factor,... MODULARITY HEALTHCARE E.g., sensor nodes Form-factor, power, bio-compatibility,reliability FORMFACTOR

30 3D STACKED ICs CONNECTED THROUGH TSVs Optical interconnects Photonics Multi-core logic Memory

31 NEW MEMORY CONCEPTS GdAlSiO x Si 3 N 4 BiCS (ref. Toshiba) Explore Marc Heyns!imec 2009

32 NEW MEMORY CONCEPTS GdAlSiO x Cross-bar memory Si 3 N 4 Explore Marc Heyns!imec 2009

33 LIKELY FLASH ROADMAP >2015 RRAM <1F 2 3D NAND 1F 2 GdAlSiO x 3 bit FG 4 bit FG 2F 2 2 bit FG

34 LIKELY DRAM ROADMAP >2015 RRAM 1x nm 4F 2 3x nm 2x nm 6F 2 6x nm 5x nm GdAlSiO x 4x nm 8F 2

35 RELENTLESS SCALING Lithography Enabled Scaling Materials Enabled Scaling 3D Enabled Scaling

36 DOUBLE PATTERNING Litho-Etch-Litho-Etch Spacer defined DP First exposure First exposure Etch Second exposure Spacer making Final CD < 10%CD Etch Final CD < 10% CD Etch 32nm Lines/32nm Spaces Surname + Name! IMEC restricted

37 SOURCE MASK OPTIMIZATION 22NM SRAM PROCESS WINDOW WITH DOUBLE PATTERNING Freeform illumination Mask!56 nm defocus!48 nm defocus Best focus best dose +40 nm defocus +48 nm defocus Standard illumination Contact layer design split k 1 =0.384 Exposure Latitude (%)! 10! 8! MEEF = 3.0 6! 4! MEEF = 4.4 2! 0! Depth of Focus (nm) Process window limiting feature Surname + Name! IMEC restricted

38 28 nm 30 nm EUV LITHOGRAPHY

39 EUV TOOL OUTPUT cumulative wafer output # good wafers cumulative wafer output ~ Weeks Weeks

40 22nm NODE SRAM PATTERNING WITH EUV µm µm! 0.22µm! 40

41 IMEC PARTNER EXPOSURES

42 RESIST MATERIALS Sensitivity Resolution Acid Diffusion Length = Pixel Size Shot Noise Statistics = Photons/ Pixel Acid Diffusion Length Line Width Roughness Surname + Name! IMEC restricted

43 RESIST MATERIALS SEVR Surname + Name! IMEC restricted

44 EUV ROADMAP TOWARDS 10nm ADT NXE:3100 NXE:3300 imec 2010

45 ML2 LITHO DEVELOPMENT Meeting the 3 key targets (resolution, overlay, throughput) for direct write on Si is extremely challenging! Targets are rapidly moving according to Moore s law. Missing the targeted insertion node can have major impact on the ROI Focusing on mask writing as intermediate milestone! Reduces the risk: any throughput improvement is welcome Both 193nm and EUVL can use this LUC VAN DEN HOVE / IMEC

46 OUTLINE! Industry drivers! Roadmap extension! Lithography options! Innovation through global collaboration imec 2010

47 BRINGING TOGETHER FULL ECO SYSTEM System Logic IDM Memory IDM Fabless Fablite Foundries EDA Material Suppliers Suppliers Equipment Suppliers SAT imec 2010

48 BRINGING TOGETHER FULL ECO SYSTEM System Logic IDM Memory IDM Fabless Fablite Foundries EDA Material Suppliers Suppliers Equipment Suppliers SAT imec 2010

49 CONCLUSIONS!Nano-electronics will continue to bring innovation into many converging application fields!concurrent scaling enabled by lithography materials innovations 3D!Momentum on EUV has increased tremendously during last year!global collaboration (including entire value chain) is required to address the huge R&D challenges LUC VAN DEN HOVE / IMEC 2010

50 ASPIRE INVENT ACHIEVE