Drain (D) easy to use (more controllable switching dv/dt by Rg) The reliability trial conforms to AEC Q % avalanche tested Gate (G)

Transcription

1 Super FAP-E 3S Low Qg Built-in FRED series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance Low switching loss Drain (D) easy to use (more controllable switching dv/dt by Rg) The reliability trial conforms to AEC Q. % avalanche tested Gate (G) Applications switching applications Absolute Maximum Ratings at Tc=25 (unless otherwise specified) Description Symbol Characteristics Unit Remarks Source (S) Drain-Source Voltage V DS 3 V V DSX 3 V V GS =-3V Continuous Drain Current I D ±47 A Pulsed Drain Current I DP ±88 A Gate-Source Voltage V GS ±3 V Non-Repetitive Maximum Avalanche current I AS 47 A Note* Non-Repetitive Maximum Avalanche Energy E AS 44 mj Note*2 Peak Diode Recovery dv/dt dv/dt 4.7 kv/μs Note*3 Peak Diode Recovery di/dt -di/dt A/μs Note*4 Maximum Power Dissipation P D 4 W Operating and Storage Temperature range T ch 5 T stg -55 to +5 Note* : Tch 5,See Fig. and Fig.2 Note*2 : Starting Tch=25,L=345μH,V CC =48V,RG=5Ω,See Fig. and Fig.2 E AS limited by maximum channel temperature and avalanche current. See to Avalanche Energy graph of page 5 Note*3 : IF -ID,-di/dt=A/μs,V CC BV DSS, Tch 5 Note*4 : IF -ID,dV/dt=4.7kV/μs,V CC BV DSS, Tch 5 Electrical Characteristics at Tc=25 (unless otherwise specified) Static Ratings Description Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BV DSS BV DSX I D =ma V GS =V I D =ma V GS =-3V V V Gate Threshold Voltage V GS(th) I D =25μA V DS = V GS V Zero Gate Voltage Drain current I DSS V DS = 3V V GS =V V DS = 24V V GS =V Ta=25-2 μa Ta= ma Gate-Source Leakage current I GSS V GS =3V V DS = V Drain-Source On-State Resistance R DS(on) I D =23.5A V GS =V - na mω Jun. 23

2 2 Dynamic Ratings Description Symbol Conditions Min. Typ. Max. Unit Forward Transconductance g fs I D =23.5A V DS =25V Input Capacitance C iss VDS =25V S Output Capacitance C oss V GS =V Reverse Transfer Capacitance C rss f=mhz pf Turn-On Time Turn-Off Time t d(on) t r t d(off) V CC=5V, V GS=V I D =23.5A, R G =Ω See Fig.3 and Fig t f ns Total Gate Charge Q G VDD =5V, I D =47A Gate-Source Charge Q GS V GS =V Gate-Drain Charge Q GD See Fig nc Reverse Ratings Description Symbol Conditions Min. Typ. Max. Unit Avalanche Capability I AV L=345μH, T ch =25 See Fig. and Fig.2 Diode Forward On- Voltage V SD I F =47A, V GS =V T ch = A -..5 V Reverse Recovery Time t rr I F =47A, V GS =V ns -di/dt=a/μs Reverse Recovery Charge Q rr T ch = μc Thermal Characteristics Description Symbol Min. Typ. Max. Unit Cannel to Case R th(ch-c) /W Cannel to Ambient R th(ch-a) /W

3 gfs [S] RDS(on) [Ω ] PD [W] 5 Power Dissipation PD=f (Tc) Safe operating area ID=f (VDS):Single pulse (D=), Tc= DC t = μ s μ s ms ms ms Tc [ ] 6 Typical output characteristics ID=f (VDS):8μ s pulse test, Tc= VDS [V] Typical transfer characteristics ID=f (VGS):8μ s pulse test, VDS=V, Tch=25 5 V 8.V 4 2V 7.5V 3 7.V 2 6.5V VGS=6.V VDS [V] Typical Transconductance gfs=f(id):8μ s pulse test, VDS=25V, Tch= VGS [V] Typical Drain-Source on-state Resistance RDS(on)=f (ID):8μ s pulse test, Tch= Vgs=6.V 6.5V 7.V V 8.V V. 2V

4 IF [A] t [ns] VGS [V] C [pf] RDS(on) [Ω ] VGS(th) [V].3 Drain-source on-state resistance RDS(on)=f (Tch):ID=23.5A, VGS=V Gate Threshold Voltage vs. Tch VGS(th)=f (Tch):VDS=VGS, ID=25μ A Max. 4 Typ.. max. typ. 3 2 MIn Tch [ ] Typical Gate Charge Characteristics VGS=f (Qg):ID=47A, Tch= Tch [ ] Typical capacitances C=f (VDS):VGS=V, f=mhz 5 Vcc=6V 24V 5V 4 3 Ciss 2 Coss 5 Crss 5 5 Qg [nc] Typcal Forward Characteristics of Reverse Diode IF=f (VSD):8μ s pulse test, Tch= VDS [V] Typical Switdhing Characteristics vs. ID t=f (ID):Vcc=5V, VGS=V, RG=Ω td(off) tf td(on) tr VSD [V] 4

5 Eas [mj] Zth(ch-c) [ /W] 5 I (AV) [A] Maximum Avalanche energy vs. starting Tch Maximum Avalanche Current vs. starting Tch Eas=f (starting Tch):Vcc=48V, I AV <=47A, single pulse I (AV) =f (starting Tch), single pulse I AS =9A I AS =29A I AS =47A Starting Tch [ ] Starting Tch [ ] Maximum Transist Thermal Impedance Zth(ch-c)=f (t):d= x -5 x t [sec]

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8 8 WARNING.This Data Sheet contains the product specifications, characteristics, data, materials, and structures as of Jun 23. The contents are subject to change without notice changes or other reasons. When using a product listed in this Data Sheet, be sure to obtain the latest specifications. 2.All applications described in this Data Sheet exemplify the use of Fuji s products for reference only. No right or license, either express or implied, under any patent, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other s intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent design failsafe, flame retardant, and free of malfunction. 4.The produced introduced in this Data Sheet are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (Terminal devices) Machine tools AV equipment Measurement equipment Personal equipment Industrial robots Electrical home appliances etc. 5.If you need to use a product in this Data Sheet for enquiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji s product incorporated in equipment becomes faulty. Backbone network equipment Transportation equipment (automobiles, trains, ships, etc.) Traffic-signal control equipment Gas alarms, leakage gas auto breakers Medical equipment Burglar alarms, fire alarms, emergency equipment etc. 6.Do not use products in this Data Sheet for the equipment requiring strict reliability such as the following and equivalents strategic equipment (without limitation). Aerospace equipment Aeronautical equipment Nuclear control equipment Submarine repeater equipment 7. As for a part of this Data Sheet or all the reprint reproductions, the approval of Fuji Electric Co., Ltd. by the document is necessary. 8.If you have any question about any portion in this Data Sheet, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.