Silicon N-Channel MOSFET
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1 Silicon N-Channel MOSFET Features 2A,600V, R DS(on) (Max 5Ω)@V GS =10V Ultra-low Gate Charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Winsemi s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. G D S TO220 Absolute Maximum Ratings Symbol Parameter Value Units V DSS Drain Source Voltage 600 V I Continuous Drain Current(@Tc=25 ) 2.0 A D Continuous Drain Current(@Tc=100 ) 1.3 A I DM Drain Current Pulsed (Note1) 6 A V GS Gate to Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 120 mj E AR Repetitive Avalanche Energy (Note 1) 5.4 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Total Power Dissipation(@Tc=25 ) 54 W P D Derating Factor above W/ T J, T stg Junction and Storage Temperature -55~150 T L Maximum lead Temperature for soldering purposes 300 Thermal Characteristics Symbol Parameter Value Min Typ Max Units R QJC Thermal Resistance, Junction-to-Case /W R QCS Thermal Resistance, Case-to-Sink /W R QJA Thermal Resistance, Junction-to-Ambient /W Rev. E Nov.2009 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T02-2
2 Electrical Characteristics (Tc = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±30 V, V DS = 0 V - - ±100 na Gate source breakdown voltage V (BR)GSS I G = ±10 μa, V DS = 0 V ± V Drain cut off current I V DS = 600 V, V GS = 0 V μa DSS V DS = 480 V, Tc = 125 C μa Drain source breakdown voltage V (BR)DSS I D = 250 μa, V GS = 0 V V Break Voltage Temperature Coefficient ΔBV DSS/ ΔT J I D =250μA, Referenced to V/ Gate threshold voltage V GS(th) V DS = 10 V, I D =250 μa 2-4 V Drain source ON resistance R DS(ON) V GS = 10 V, I D =1A Ω Forward Transconductance gfs V DS = 50 V, I D =1A S Input capacitance C iss V DS = 25 V, Reverse transfer capacitance C rss V GS = 0 V, Output capacitance C oss f = 1 MHz pf Switching time Rise time Turn on time Fall time t r t on t f V DD =300 V, I D = 2 A R G =25 Ω Turn off time t off (Note4,5) ns Total gate charge (gate source plus gate drain) Q g V DD = 320 V, V GS = 10 V, Gate source charge Q gs I D = 2 A Gate drain ( miller ) Charge Q gd (Note4,5) nc Source Drain Ratings and Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current I DR A Pulse drain reverse current I DRP A Forward voltage (diode) V DSF I DR = 2 A, V GS = 0 V V Reverse recovery time t rr I DR = 2 A, V GS = 0 V, ns Reverse recovery charge Q rr di DR / dt = 100 A / μs μc Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=0.5mH,I AS =2.0A,V DD =50V,R G =0Ω,Starting T J =25 3.I SD 2.0A,di/dt 200A/us, V DD <BV DSS,STARTING TJ=25 4.Pulse Test: Pulse Width 300us,Duty Cycle 2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2 /7
3 Fig. 1 On-Stat ate Characteristics Fig.2 Trans ransfer Current Characteristics Fig.3 On-Resistance Vari riati ation vs Drain Current Fig.4 Body Diode Forward Volt oltage Vari riati ation vs. Source Current and Temperatu mperature Fig.5 On-Resistance Vari riati ation vs Junction Temperature Fig.6 Gate Cha harge Characte acteristics 3 /7
4 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperatu mperature Fig.9 Transient Thermal Response Curve 4 /7
5 Fig.10 Gate Test Circuit & Waveform Fig.11 Resisti sistive Switchi ching Test Circuit & Waveform Fig.12 Unclamped Inductive Swit witch ching Test Circuit & Waveform 5 /7
6 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6 /7
7 TO-220 Package Dimension Unit: mm 7 /7
WFP830. nnel. Thermal Characteristics. Features. General Description TO220. Symbol Parameter Value Units. Value Min Typ Max. Units. Rev, C Nov.
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R6015ANZ Nch 600V 15A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 0.3Ω I D ±15A P D 110W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be
More informationV T j,max. I DM R DS(ON),max < 0.19Ω Q g,typ E 400V. 100% UIS Tested 100% R g Tested G D S S. Package Type TO-220F Green.
AOTF9A6L 6V, 2A αmos5 TM Power Transistor General Description Proprietary αmos5 TM technology Low R DS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and
More informationSymbol Parameter Value Units V DSS Drain to Source Voltage 400 V. Total Power Dissipation ) 40 W Derating Factor above 25 0.
400V N-Channel MOSFET Features RDS(ON) (Max 1.00Ω) @ VGS=10V Gate Charge : 18.0 nc (Typical) Improved dv/dt capability / Fast switching 100% EAS Tested BVDSS RDS(ON) MAX ID 400V 1.00Ω 6A TO-220F PKG General
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UNISONIC TECHNOLOGIES CO., LTD 4A, 6V N-CHANNEL POWER MOSFET DESCRIPTION TO-22F TO-22F The UTC 4N6-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
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General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,
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UNISONIC TECHNOLOGIES CO., LTD 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC s advanced technology to provide the customers with a minimum on-state resistance,
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More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar
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