General Description. Symbol Parameter Value Units. dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

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1 Features NChannel MOSFET BS (Minimum) R DS(ON) (Maximum) I D Qg (Typical) P D (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W General Description This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and high efficiency switch mode power supplies. D G S Absolute Maximum Ratings Symbol Parameter Value Units S Drain to Source Voltage 600 V Continuous Drain Current (@Tc=25 ) 4 A I D Continuous Drain Current (@Tc=100 ) 3.0 A I DM Drain Current Pulsed (Note 1) 16 A Gate to Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 260 mj E AR Repetitive Avalanche Energy (Note 1) 7.3 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Total Power Dissipation (@Tc=25 ) 73 W P D Derating Factor above W/ T STG,T J Operating junction temperature &Storage temperature 55~+150 T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 Thermal Characteristics Symbol Parameter Min Value Typ Max Units R θjc Thermal Resistance, JunctiontoCase 1.72 / W R θcs Thermal Resistance, CasetoSink 0.5 / W R θja Thermal Resistance, JunctiontoAmbient 62.5 / W 1/6

2 Electrical Characteristics (Tc=25 unless otherwise noted) Symbol Parameter Test Conditions Off Characteristics Value Min Typ Max Units BS Drain Source Breakdown Voltage =0V,I D =250uA 600 V BS / Tj Breakdown Voltage Temperature coefficient I D =250uA,referenced to V/ I DSS DrainSource Leakage Current =600V, =0V =480V, Tc=125 1 ua I GSS GateSource Leakage Current =30V, =0V 100 na GateSource Leakage Reverse =30V, =0V 100 na On Characteristics (th) Gate Threshold Voltage =,I D =250uA V R DS(ON) Static DrainSource Onstate Resistance =,I D =2.0A ohm Dynamic Characteristics Ciss Input Capacitance 670 Coss Output Capacitance =0V, =25V, f=1mhz 90 pf Crss Reverse Transfer Capacitance 11 Dynamic Characteristics t d(on) Turnon Delay Time 60 t r Rise Time =300V,I D =4.0A 94 R G =50ohm t d(off) Turnoff Delay Time 140 (Note4,5) t f Fall Time 74 Q g Total Gate Charge V Q gs GateSource Charge DS =480V, =, I D =4.0A 5 Q gd GateDrain Charge (Miller Charge) (Note4,5) 7 SourceDrain Diode Ratings and Characteristics Symbol I S I SM V SD Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Test Conditions Integral Reverse pn Junction Diode in the MOSFET G I S =1.0A, =0V D s S Min. Typ. Max ns nc Unit. A V t rr Q rr Reverse Recovery Time Reverse Recovery Charge I S =1.0A, =0V, di F /dt=100a/us ns uc NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=30mH,I AS =4.0A, =50V,R G =0ohm, Starting TJ=25 3. ISD 1.8A,di/dt 100A/us, BVDSS, Starting TJ=25 4. Pulse Test: Pulse Width 300us,Duty Cycle 2% 5. Essentially independent of operating temperature. 2/6

3 Fig 1. OnState Characteristics Fig 2. Transfer Characteristics Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics (NonRepetitive) Fig 6. Gate Charge Characteristics 3/6

4 Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. OnResistance Variation vs. Junction Temperature Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current Vs. Case Temperature Fig 11. Transient Thermal Response Curve 4/6

5 200nF 50K 300nF Same Type as Q gs Q g Q gd 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms R L (0.5 rated ) 90% Pulse Generator R G V in 10% t d(on) t r t on t d(off) t f t off Fig 13. Switching test Circuit & Waveforms L 1 BV EAS= L L I AS2 DSS 2 BS BS R G I AS I D (t) (t) t p Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6

6 + L Driver R G Same Type as Is controlled by pulse period (Driver) Gate Pulse Width D = Gate Pulse Period I FM,Body Diode Forward Current I S () di/dt I RM Body Diode Reverse Current () Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6