Power MOSFET FEATURES. IRFP23N50LPbF SiHFP23N50L-E3 IRFP23N50L SiHFP23N50L

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1 Power MOSFET IRFP23N5L, SiHFP23N5L PRODUCT SUMMARY (V) 5 R DS(on) (Ω) V GS = V.9 Q g (Max.) (nc) 5 Q gs (nc) 44 Q gd (nc) 72 Configuration Single TO247 S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET FEATURES Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications Lower Gate Charge Results in Simpler Drive Requirements Enhanced dv/dt Capabilities Offer Improved Ruggedness Higher Gate Voltage Threshold Offers Improved Noise Immunity Lead (Pb)free Available APPLICATIONS Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control Applications TO247 IRFP23N5LPbF SiHFP23N5LE3 IRFP23N5L SiHFP23N5L Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS T C = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 5 V GateSource Voltage V GS ± 3 Continuous Drain Current V GS at V T C = 25 C 23 I D T C = C 5 A Pulsed Drain Current a I DM 92 Linear Derating Factor 2.9 W/ C Single Pulse Avalanche Energy b E AS 4 mj Repetitive Avalanche Current a I AR 23 A Repetitive Avalanche Energy a E AR 37 mj Maximum Power Dissipation T C = 25 C P D 37 W Peak Diode Recovery dv/dt c dv/dt 4 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to 5 Soldering Recommendations (Peak Temperature) for s 3 d C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Starting T J = 25 C, L =.5 mh, R G = 25 Ω, I AS = 23 A (see fig. 2). c. I SD 23 A, di/dt 43 A/µs, V DD, T J 5 C. d..6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply lbf in. N m S8352Rev. A, 6Jun8

2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 4 CasetoSink, Flat, Greased Surface R thcs.24 C/W Maximum JunctiontoCase (Drain) R thjc.34 SPECIFICATIONS T J = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage V GS = V, I D = 25 µa 5 V Temperature Coefficient Δ /T J Reference to 25 C, I D = ma d.27 V/ C GateSource Threshold Voltage V GS(th) = V GS, I D = 25 µa V GateSource Leakage I GSS V GS = ± 3 V ± na = 5 V, V GS = V 5 µa Zero Gate Voltage Drain Current I DSS = 4 V, V GS = V, T J = 25 C 2. ma DrainSource OnState Resistance R DS(on) V GS = V I D = 4 A b Ω Forward Transconductance g fs = 5 V, I D = 4 A b 2 S Dynamic Input Capacitance C iss V GS = V, 36 Output Capacitance C oss = 25 V, 38 Reverse Transfer Capacitance C rss f =. MHz, see fig Output Capacitance C oss =. V, f =. MHz 48 = 4 V, f =. MHz pf Effective Output Capacitance C oss eff. V GS = V = V to 4 V c 22 Effective Output Capacitance (Energy Related) C oss eff. (ER) = V to 4 V d 6 Internal Gate Resistance R G f = MHz, open drain.2 Ω Total Gate Charge Q g I D = 23 A, = 4 V 5 GateSource Charge Q gs V GS = V nc see fig. 6 and 3 b 44 GateDrain Charge Q gd 72 TurnOn Delay Time t d(on) 26 V DD = 25 V, I D = 23 A Rise Time t r 94 R G = 6., V GS = V ns TurnOff Delay Time t d(off) 53 Fall Time t f see fig. b 45 DrainSource Body Diode Characteristics Continuous SourceDrain Diode Current I MOSFET symbol D S 23 showing the G integral reverse Pulsed Diode Forward Current a I SM 92 S p n junction diode A Body Diode Voltage V SD T J = 25 C, I S = 4 A, V GS = V b.5 V T J = 25 C 7 25 Body Diode Reverse Recovery Time t rr T J = 25 C I F = 23 A, ns Body Diode Reverse Recovery Charge Q rr T J = 25 C di/dt = A/µs b T J = 25 C 98 5 µc Reverse Recovery Current I RRM T J = 25 C 7.6 A Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 3 µs; duty cycle 2 %. c. C oss eff. is a fixed capacitance that gives the same charging time as C oss while is rising fom to 8 %. d. C oss eff. (ER) is a fixed capacitance that stores the same energy time as C oss while is rising fom to 8 %. 2 S8352Rev. A, 6Jun8

3 I D, DraintoSource Current (A) IRFP23N5L, SiHFP23N5L TYPICAL CHARACTERISTICS 25 C, unless otherwise noted... VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5 V 2µs PULSE WIDTH Tj = 25 C. I D, Drainto Source Current (A). T J = 25 C. T J = 5 C. 2 µs PULSE WIDTH T J = 5 C , DraintoSource Voltage (V) V GS, GatetoSource Voltage (V) Fig. Typical Output Characteristics Fig. 3 Typical Transfer Characteristics I D, DraintoSource Current (A). VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4,5 V 2µs PULSE WIDTH Tj = 5 C VDS, DraintoSource Voltage (V) R DS(ON), DraintoSource On Resistance (Normalized) I D = 23 A T J, Junction Temperature V GS = V ( C) Fig. 2 Typical Output Characteristics Fig. 4 Normalized OnResistance vs. Temperature S8352Rev. A, 6Jun8 3

4 Energy (µj) IRFP23N5L, SiHFP23N5L C, Capacitance (pf) V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss Coss V GS, GatetoSource Voltage (V) I D = 23 = 4 V = 25 V = V Crss, DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage Q G, Total Gate Charge (nc) Fig. 7 Typical Gate Charge vs. GatetoSource Voltage I SD, Reverse Drain Current (A).. T J = 5 C T J = 25 C , DraintoSource Voltage (V) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage.. V GS = V V SD, SourcetoDrain Voltage (V) Fig. 8 Typical SourceDrain Diode Forward Voltage OPERATION IN THIS AREA LIMITED BY R DS(ON) 25 2 I D, Drain Current (A) us us ms T C = 25 C ms T J = 5 C Single Pulse, DraintoSource Voltage (V) Fig. 9 Maximum Safe Operating Area I D, Drain Current (A) T C, Case Temperature ( C) Fig. Maximum Drain Current vs. Case Temperature 4 S8352Rev. A, 6Jun8

5 R D 9 % V GS D.U.T. R G V Pulse width µs Duty factor. % V DD % V GS t d(on) t r t d(off) t f Fig. a Switching Time Test Circuit Fig. b Switching Time Waveforms Thermal Response (Z thjc ).. D = SINGLE PULSE (THERMAL RESPONSE) P DM t t 2 Notes:. Duty factor D = t / t 2 2. PeakT J = P DM x Z thjc T C t, Rectangular Pulse Duration (sec) Fig. 2 Maximum Effective Transient Thermal Impedance, JunctiontoCase V GS(th) Gate Threshold Voltage (V) I D = 25 µa T J, Temperature ( C) Fig. 3 Threshold Voltage vs. Temperature E AS, Single Pulse Avalanche Energy (mj) Starting T, Junction Temperature I D TOP A 5A BOTTOM 23A ( C) Fig. 4 Maximum Avalanche Energy s. Drain Current S8352Rev. A, 6Jun8 5

6 5 V t p L Driver R G 2 V tp D.U.T I AS.Ω V DD A I AS Fig. 5a Unclamped Inductive Test Circuit Fig. 5b Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 2 V.2 µf 5 kω.3 µf V Q G D.U.T. V DS Q GS Q GD V GS V G 3 ma Fig. 6a Gate Charge Test Circuit I G I D Current sampling resistors Charge Fig. 6b Basic Gate Charge Waveform 6 S8352Rev. A, 6Jun8

7 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt V DD ReApplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig. 7 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S8352Rev. A, 6Jun8 7

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