Power MOSFET FEATURES. IRFP23N50LPbF SiHFP23N50L-E3 IRFP23N50L SiHFP23N50L
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1 Power MOSFET IRFP23N5L, SiHFP23N5L PRODUCT SUMMARY (V) 5 R DS(on) (Ω) V GS = V.9 Q g (Max.) (nc) 5 Q gs (nc) 44 Q gd (nc) 72 Configuration Single TO247 S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET FEATURES Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications Lower Gate Charge Results in Simpler Drive Requirements Enhanced dv/dt Capabilities Offer Improved Ruggedness Higher Gate Voltage Threshold Offers Improved Noise Immunity Lead (Pb)free Available APPLICATIONS Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control Applications TO247 IRFP23N5LPbF SiHFP23N5LE3 IRFP23N5L SiHFP23N5L Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS T C = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 5 V GateSource Voltage V GS ± 3 Continuous Drain Current V GS at V T C = 25 C 23 I D T C = C 5 A Pulsed Drain Current a I DM 92 Linear Derating Factor 2.9 W/ C Single Pulse Avalanche Energy b E AS 4 mj Repetitive Avalanche Current a I AR 23 A Repetitive Avalanche Energy a E AR 37 mj Maximum Power Dissipation T C = 25 C P D 37 W Peak Diode Recovery dv/dt c dv/dt 4 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to 5 Soldering Recommendations (Peak Temperature) for s 3 d C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Starting T J = 25 C, L =.5 mh, R G = 25 Ω, I AS = 23 A (see fig. 2). c. I SD 23 A, di/dt 43 A/µs, V DD, T J 5 C. d..6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply lbf in. N m S8352Rev. A, 6Jun8
2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 4 CasetoSink, Flat, Greased Surface R thcs.24 C/W Maximum JunctiontoCase (Drain) R thjc.34 SPECIFICATIONS T J = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage V GS = V, I D = 25 µa 5 V Temperature Coefficient Δ /T J Reference to 25 C, I D = ma d.27 V/ C GateSource Threshold Voltage V GS(th) = V GS, I D = 25 µa V GateSource Leakage I GSS V GS = ± 3 V ± na = 5 V, V GS = V 5 µa Zero Gate Voltage Drain Current I DSS = 4 V, V GS = V, T J = 25 C 2. ma DrainSource OnState Resistance R DS(on) V GS = V I D = 4 A b Ω Forward Transconductance g fs = 5 V, I D = 4 A b 2 S Dynamic Input Capacitance C iss V GS = V, 36 Output Capacitance C oss = 25 V, 38 Reverse Transfer Capacitance C rss f =. MHz, see fig Output Capacitance C oss =. V, f =. MHz 48 = 4 V, f =. MHz pf Effective Output Capacitance C oss eff. V GS = V = V to 4 V c 22 Effective Output Capacitance (Energy Related) C oss eff. (ER) = V to 4 V d 6 Internal Gate Resistance R G f = MHz, open drain.2 Ω Total Gate Charge Q g I D = 23 A, = 4 V 5 GateSource Charge Q gs V GS = V nc see fig. 6 and 3 b 44 GateDrain Charge Q gd 72 TurnOn Delay Time t d(on) 26 V DD = 25 V, I D = 23 A Rise Time t r 94 R G = 6., V GS = V ns TurnOff Delay Time t d(off) 53 Fall Time t f see fig. b 45 DrainSource Body Diode Characteristics Continuous SourceDrain Diode Current I MOSFET symbol D S 23 showing the G integral reverse Pulsed Diode Forward Current a I SM 92 S p n junction diode A Body Diode Voltage V SD T J = 25 C, I S = 4 A, V GS = V b.5 V T J = 25 C 7 25 Body Diode Reverse Recovery Time t rr T J = 25 C I F = 23 A, ns Body Diode Reverse Recovery Charge Q rr T J = 25 C di/dt = A/µs b T J = 25 C 98 5 µc Reverse Recovery Current I RRM T J = 25 C 7.6 A Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 3 µs; duty cycle 2 %. c. C oss eff. is a fixed capacitance that gives the same charging time as C oss while is rising fom to 8 %. d. C oss eff. (ER) is a fixed capacitance that stores the same energy time as C oss while is rising fom to 8 %. 2 S8352Rev. A, 6Jun8
3 I D, DraintoSource Current (A) IRFP23N5L, SiHFP23N5L TYPICAL CHARACTERISTICS 25 C, unless otherwise noted... VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5 V 2µs PULSE WIDTH Tj = 25 C. I D, Drainto Source Current (A). T J = 25 C. T J = 5 C. 2 µs PULSE WIDTH T J = 5 C , DraintoSource Voltage (V) V GS, GatetoSource Voltage (V) Fig. Typical Output Characteristics Fig. 3 Typical Transfer Characteristics I D, DraintoSource Current (A). VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4,5 V 2µs PULSE WIDTH Tj = 5 C VDS, DraintoSource Voltage (V) R DS(ON), DraintoSource On Resistance (Normalized) I D = 23 A T J, Junction Temperature V GS = V ( C) Fig. 2 Typical Output Characteristics Fig. 4 Normalized OnResistance vs. Temperature S8352Rev. A, 6Jun8 3
4 Energy (µj) IRFP23N5L, SiHFP23N5L C, Capacitance (pf) V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss Coss V GS, GatetoSource Voltage (V) I D = 23 = 4 V = 25 V = V Crss, DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage Q G, Total Gate Charge (nc) Fig. 7 Typical Gate Charge vs. GatetoSource Voltage I SD, Reverse Drain Current (A).. T J = 5 C T J = 25 C , DraintoSource Voltage (V) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage.. V GS = V V SD, SourcetoDrain Voltage (V) Fig. 8 Typical SourceDrain Diode Forward Voltage OPERATION IN THIS AREA LIMITED BY R DS(ON) 25 2 I D, Drain Current (A) us us ms T C = 25 C ms T J = 5 C Single Pulse, DraintoSource Voltage (V) Fig. 9 Maximum Safe Operating Area I D, Drain Current (A) T C, Case Temperature ( C) Fig. Maximum Drain Current vs. Case Temperature 4 S8352Rev. A, 6Jun8
5 R D 9 % V GS D.U.T. R G V Pulse width µs Duty factor. % V DD % V GS t d(on) t r t d(off) t f Fig. a Switching Time Test Circuit Fig. b Switching Time Waveforms Thermal Response (Z thjc ).. D = SINGLE PULSE (THERMAL RESPONSE) P DM t t 2 Notes:. Duty factor D = t / t 2 2. PeakT J = P DM x Z thjc T C t, Rectangular Pulse Duration (sec) Fig. 2 Maximum Effective Transient Thermal Impedance, JunctiontoCase V GS(th) Gate Threshold Voltage (V) I D = 25 µa T J, Temperature ( C) Fig. 3 Threshold Voltage vs. Temperature E AS, Single Pulse Avalanche Energy (mj) Starting T, Junction Temperature I D TOP A 5A BOTTOM 23A ( C) Fig. 4 Maximum Avalanche Energy s. Drain Current S8352Rev. A, 6Jun8 5
6 5 V t p L Driver R G 2 V tp D.U.T I AS.Ω V DD A I AS Fig. 5a Unclamped Inductive Test Circuit Fig. 5b Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 2 V.2 µf 5 kω.3 µf V Q G D.U.T. V DS Q GS Q GD V GS V G 3 ma Fig. 6a Gate Charge Test Circuit I G I D Current sampling resistors Charge Fig. 6b Basic Gate Charge Waveform 6 S8352Rev. A, 6Jun8
7 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt V DD ReApplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig. 7 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S8352Rev. A, 6Jun8 7
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D SOT223 G D S G D S NChannel MOSFET FEATURES Halogenfree According
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E Series Power MOSFET SiHPN8E D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 85 R DS(on) typ. (Ω) at 25 C V GS = V.8 Q g max. (nc) 88 Q gs (nc) 9 Q gd (nc) 6 Configuration Single FEATURES
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D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) V GS = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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E Series Power MOSFET SiHP35N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. () at 25 C V GS = V.82 Q g max. (nc) 32 Q gs (nc) 22 Q gd (nc) 46 Configuration Single D TO22AB G G DS S NChannel MOSFET
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EL Series Power MOSFET SiHA3N6AEL ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) 4 Q gd (nc) 9 Configuration
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SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) = 0.80 Q g (Max.) (nc) 14 Q gs (nc) 3.0 Q gd (nc) 7.9 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C ( ) V GS =.56 Q g max. (nc) 82 Q gs (nc) 29 Q gd (nc) 62 Configuration Single FEATURES Low figureofmerit (FOM) R on x Q g
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EF Series Power MOSFET With Fast Body Diode SiHF35N6EF TO22 FULLPAK D FEATURES A specific on resistance (m cm 2 ) reduction of 25 % G D S G S NChannel MOSFET Low figureofmerit (FOM) R on x Q g Low input
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E Series Power MOSFET SiHG8N6E TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.26 Q g max. (nc) 443 Q gs (nc) 85 Q gd (nc) 39 Configuration Single G
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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D Series Power MOSFET TO22 FULLPAK D G S G D S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.28 Q g max. (nc) 76 Q gs (nc) Q gd (nc) 7 Configuration Single ORDERING
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E Series Power MOSFET SiHDN8E DPAK (TO5) D PRODUCT SUMMARY G S NChannel MOSFET (V) at T J max. 85 R DS(on) typ. (Ω) at 5 C V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 8 Configuration Single G D S FEATURES
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Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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E Series Power MOSFET with Fast Body Diode ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 7 R DS(on) max. () at 25 C V GS = V.8 Q g max. (nc) 6 Q gs (nc) 4 Q gd (nc) 33 Configuration
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
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E Series Power MOSFET SiHS9N65E PRODUCT SUMMARY (V) at T J max. 7 R DS(on) () typ. at 25 C V GS = V.25 Q g (nc) max. 59 Q gs (nc) 84 Q gd (nc) 6 Configuration Single FEATURES Low figureofmerit (FOM) R
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D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.85 Q g (max.) (nc) 3 Q gs (nc) 4 Q gd (nc) 7 Configuration Single TO22AB D G FEATURES Optimal Design Low Area
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Power MOSFET IRF510, SiHF510 PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt rating Repetitive avalanche rated 175 C
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G S G D S NChannel MOSFET ORDERING INFORMATION Package Lead
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D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.3 Q g max. (nc) 25 Q gs (nc) 23 Q gd (nc) 37 Configuration Single Super247 S D G ORDERING INFORMATION Package
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EF Series Power MOSFET With Fast Body Diode SiHP38N6EF D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.6 Q g max. (nc) 89 Q gs (nc) 26 Q gd (nc)
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EF Series Power MOSFET With Fast Body Diode SiHG8N6EF TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.28 Q g max. (nc) 4 Q gs (nc) 43 Q gd (nc) 43 Configuration
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D Series Power MOSFET SiHD3N5D PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V 3.2 Q g max. (nc) 2 Q gs (nc) 2 Q gd (nc) 3 Configuration Single DPAK (TO252) D G ORDERING INFORMATION
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 10 V 1. Q g (Max.) (nc) 8.7 Q gs (nc). Q gd (nc) 4.1 Configuration Single S FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.28 Q g (Max.) (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
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D Series Power MOSFET IRF8B PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) Q gd (nc) 5 Configuration Single D TO22AB FEATURES Optimal design Low area specific
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
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EF Series Power MOSFET with Fast Body Diode SiHA21N6EF ThinLead TO22 FULLPAK PRODUCT SUMMARY S D G NChannel MOSFET (V) at T J max. 65 R DS(on) max. () at 25 C V GS = 1 V.176 Q g max. (nc) 84 Q gs (nc)
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
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E Series Power MOSFET SiHP33N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. () at 25 C V GS = V.99 Q g max. (nc) 5 Q gs (nc) 24 Q gd (nc) 42 Configuration Single D TO22AB G G DS S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 5.0 V 0.80 Q g (Max.) (nc) 16 Q gs (nc) 2.7 Q gd (nc) 9.6 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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D Series Power MOSFET SiHP6N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C () V GS = V. Q g max. (nc) 8 Q gs (nc) 3 Q gd (nc) 4 Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) () V GS = 10 V 0.28 Q g max. (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET FEATURES Dynamic dv/dt rating Repetitive
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
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SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
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E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 7 R DS(on) max. at 25 C (Ω) V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 32 Configuration Single TO22 FULLPAK D G G D S S NChannel MOSFET ORDERING
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PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
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D Series Power MOSFET SiHPND PRODUCT SUMMARY (V) at T J max. 5 R DS(on) max. at 25 C () = V. Q g max. (nc) 8 Q gs (nc) 3 Q gd (nc) Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING INFORMATION
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PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
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EF Series Power MOSFET with Fast Body Diode SiHP2N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.76 Q g (Max.) (nc) 84 Q gs (nc) 4 Q gd (nc) 24 Configuration Single D TO22AB G
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E Series Power MOSFET SiHA2N5E PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C (Ω) V GS = V.84 Q g max. (nc) 92 Q gs (nc) Q gd (nc) 9 Configuration Single FEATURES Low figureofmerit (FOM) R on
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EF Series Power MOSFET with Fast Body Diode SiHP33N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.98 Q g (Max.) (nc) 55 Q gs (nc) 22 Q gd (nc) 43 Configuration Single D TO22AB
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D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C () V GS = V.4 Q g max. (nc) 58 Q gs (nc) 8 Q gd (nc) 4 Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING INFORMATION
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