Packaging. Symbol. A Pulsed Drain Current...I DM Refer to Peak Current Curve Single Pulse Avalanche Rating... E AS

Transcription

1 December 1995 SEMICONDUCTOR RFD15P5, RFD15P5SM, RFP15P5 15A, 5V, Avalanche Rated, PChannel EnhancementMode Power MOSFETs Features 15A, 5V r DS(ON) =.15Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve Packaging DRAIN (FLANGE) JEDEC TO22AB DRAIN GATE Description The RFD15P5, RFD15P5SM, and RFP15P5 PChannel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND RFD15P5 TO251AA F15P5 RFD15P5SM TO252AA F15P5 RFP15P5 TO22AB RFP15P5 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO252AA variant in the tape and reel, i.e., RFD15P5SM9A. Symbol JEDEC TO251AA DRAIN GATE DRAIN (FLANGE) JEDEC TO252AA DRAIN (FLANGE) GATE D G Formerly developmental type TA933. S Absolute Maximum Ratings T C = 25 o C RFD15P5, RFD15P5SM, RFP15P5 UNITS Drain Source Voltage S 5 V Drain Gate Voltage V DGR 5 V Gate Source Voltage V GS ±2 V Drain Current RMS Continuous I D 15 A Pulsed Drain Current I DM Refer to Peak Current Curve Single Pulse Avalanche Rating E AS Refer to UIS Curve Power Dissipation T C = 25 o C P D Derate above 25 o C Operating and Storage Temperature T STG, T J 55 to 175 Soldering Temperature of Leads for 1s T L 26 o C W W/ o C o C CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright Harris Corporation File Number 237.3

2 Specifications RFD15P5, RFD15P5SM, RFP15P5 Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DrainSource Breakdown Voltage BS I D = 25µA, V GS = V 5 V Gate Threshold Voltage V GS(TH) V GS =, I D = 25µA V Zero Gate Voltage Drain Current I DSS = 5V, V GS = V T C = 25 o C 1 µa T C = 15 o C 5 µa GateSource Leakage Current I GSS V GS = ±2V 1 na On Resistance r DS(ON) I D = 15A, V GS = 1V.15 Ω TurnOn Time t ON V DD = 25V, I D = 7.5A 6 ns TurnOn Delay Time t D(ON) R L = 3.3Ω, V GS = 1V R GS = 12.5Ω 16 ns Rise Time t R 3 ns TurnOff Delay Time t D(OFF) 5 ns Fall Time t F 2 ns TurnOff Time t OFF 1 ns Total Gate Charge Q G(TOT) V GS = V to 2V V DD = 4V, 15 nc Gate Charge at 1V Q G(1) V GS = V to 1V I D = 15A, R L = 2.67Ω 75 nc Threshold Gate Charge Q G(TH) V GS = V to 2V 3.5 nc Input Capacitance C ISS = 25V, V GS = V 115 pf f = 1MHz Output Capacitance C OSS 3 pf Reverse Transfer Capacitance C RSS 56 pf Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient R θjc TO22AB, TO251AA, TO252AA 1.75 R θja TO251AA, TO252AA 1 TO22AB o C/W o C/W o C/W SourceDrain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage V SD I SD = 15A 1.5 V Reverse Recovery Time t RR I SD = 15A, di SD /dt = 1A/µs 125 ns 42

3 Typical Performance Curves RFD15P5, RFD15P5SM, RFP15P5 1 T C = 25 o C 2 1 I D, DRAIN CURRENT (A) 1 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) S MAX = 5V , DRAINTO VOLTAGE (V) FIGURE 1. SAFE OPERATING AREA CURVE 1µs 1ms 1ms 1ms DC Z θjc, NORMALIZED THERMAL RESPONSE SINGLE PULSE P DM t 1 t 2 NOTES: DUTY FACTOR: D = t 1 /t 2 PEAK T J = P DM x Z θjc T C t, RECTANGULAR PULSE DURATION (s) FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE I D, DRAIN CURRENT (A) T C, CASE TEMPERATURE ( o C) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 175 I DM, PEAK CURRENT CAPABILITY (A) 2 1 V GS = 2V V GS = 1V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION t, PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 175 T C I = I I D, DRAIN CURRENT (A) PULSE DURATION = 25µs, T C = 25 o C 4 V GS = 1V V GS = 2V V GS = V 3 V GS = 7V 2 V GS = 6V 1 V GS = 4.5V V GS = 5V , DRAINTO VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS I D(ON), ON STATE DRAIN CURRENT (A) PULSE TEST PULSE DURATION = 25µs DUTY CYCLE =.5% MAX 55 o C V DD = 15V 25 o C 175 o C V GS, GATETO VOLTAGE (V) FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 429

4 RFD15P5, RFD15P5SM, RFP15P5 Typical Performance Curves (Continued) r DS(ON), NORMALIZED ON RESISTANCE PULSE DURATION = 25µs, V GS = 1V, I D = 15A T J, JUNCTION TEMPERATURE ( o C) 2 V GS(TH), NORMALIZED GATE THRESHOLD VOLTAGE V GS =, I D = 25µA T J, JUNCTION TEMPERATURE ( o C) 2 FIGURE 7. NORMALIZED r DS(ON) vs JUNCTION TEMPERATURE FIGURE. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE BS, NORMALIZED DRAINTO BREAKDOWN VOLTAGE T J, JUNCTION TEMPERATURE ( o C) I D = 25µA FIGURE 9. NORMALIZED DRAIN BREAKDOWN VOLTAGE vs TEMPERATURE 2 POWER DISSIPATION MULTIPLIER T C, CASE TEMPERATURE ( o C) FIGURE 1. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE C, CAPACITANCE (pf) C ISS C OSS C RSS V GS = V, f = 1MHz, DRAIN VOLTAGE (V) V DD = BS R L = 3.33Ω I G(REF) =.65mA V GS = 1V V DD = BS.75 BS.75 BS.5 BS.5 BS.25 BS.25 BS V GS, GATE VOLTAGE (V) , DRAINTO VOLTAGE (V) I G(REF) I G(REF) 2 I G(ACT) t, TIME (µs) I G(ACT) FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTE AN7254 AND AN726 43

5 RFD15P5, RFD15P5SM, RFP15P5 Typical Performance Curves (Continued) 5 STARTING T J = 15 o C I AS, AVALANCHE CURRENT (A) 1 STARTING T J = 25 o C If R = t AV = (L) (I AS ) / (1.3RATED BS V DD ) If R t AV = (L/R) ln [(I AS *R) / (1.3 RATED BS V DD ) 1] t AV, TIME IN AVALANCHE (ms) FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms BS L t P I AS VARY t P TO OBTAIN R G V DD REQUIRED PEAK I AS V t P DUT V DD I L V GS 1Ω t AV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS V DD t ON t OFF t D(OFF) R L t D(ON) t R 1% t F 1% V DUT 9% 9% V GS V GS 1% R GS 5% PULSE WIDTH 5% 9% FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 431

6 Temperature Compensated PSPICE Model for the RFD15P5, RFD15P5SM, RFP15P5.SUBCKT RFP15P REV 9/6/94 RFD15P5, RFD15P5SM, RFP15P5 CA e9 CB e9 CIN 6 1.9e9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 1 6 DPLCAPMOD EBREAK EDS EGS ESG EVTO IT 17 1 LDRAIN 2 5 1e9 LGATE e9 L e9 MOS MOSMOD M =.99 MOS MOSMOD M = 1 RBREAK 17 1 RBKMOD 1 RDRAIN 5 16 RDSMOD 63.6e3 RGATE RIN 6 1e9 RSCL RSCLMOD 1e6 RSCL e3 R 7 RDSMOD 46.5e3 RVTO 1 19 RVTOMOD 1 S1A S1AMOD S1B S1BMOD S2A S2AMOD S2B S2BMOD VBAT 19 DC 1 VTO CA 1 ESG EVTO GATE RGATE LGATE 2 6 RIN DPLCAP 16 VTO 6 CIN S1A S2A S1B 13 EGS 6 RSCL2 S2B CB EDS RDRAIN 21 MOS1 14 RSCL1 ESCL EBREAK MOS2 11 DBREAK R RBREAK IT 7 LDRAIN DBODY 2 DRAIN L 3 1 RVTO 19 VBAT ESCL 51 5 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/35,4))}.MODEL DBDMOD D (IS = 1.27e13 RS = 1.62e2 TRS1 = 1.35e3 TRS2 = 4.33e6 CJO = 1.25e9 TT = 7.97e).MODEL DBKMOD D (RS = 2.54e1 TRS1 = 4.54e3 TRS2 = 1.12e5).MODEL DPLCAPMOD D (CJO = 25e12 IS = 1e3 N = 1).MODEL MOSMOD PMOS (VTO = 3.7 KP = 6.97 IS = 1e3 N = 1 TOX = 1 L = 1u W = 1u).MODEL RBKMOD RES (TC1 = 9.15e4 TC2 = 4.e7).MODEL RDSMOD RES (TC1 = 5.47e3 TC2 = 1.37e5).MODEL RSCLMOD RES (TC1 = 1.9e3 TC2 = 7.5e6).MODEL RVTOMOD RES (TC1 = 3.71e3 TC2 = 2.41e6).MODEL S1AMOD VSWITCH (RON = 1e5 ROFF =.1 VON = 3.65 VOFF = 1.65).MODEL S1BMOD VSWITCH (RON = 1e5 ROFF =.1 VON = 1.65 VOFF = 3.65).MODEL S2AMOD VSWITCH (RON = 1e5 ROFF =.1 VON =.6 VOFF = 4.4).MODEL S2BMOD VSWITCH (RON = 1e5 ROFF =.1 VON = 4.4 VOFF =.6).ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley. 432