HP4410DY. Features. 10A, 30V, Ohm, Single N-Channel, Logic Level Power MOSFET. Symbol. Ordering Information. Packaging
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1 HP441DY Data Sheet August 1999 File Number A, 3V,.135 Ohm, Single N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Features Logic Level Gate Drive 1A, 3V r DS(ON) =.135Ω at I D = 1A, = 1V r DS(ON) =.2Ω at I D = 8A, = 4.5V Related Literature - TB334, Guidelines for Soldering Surface Mount Components to PC Boards Symbol Ordering Information PART NUMBER PACKAGE BRAND HP441DY SO-8 P441DY NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HP441DYT. SOURCE(1) SOURCE(2) SOURCE(3) DRAIN(8) DRAIN(7) DRAIN(6) GATE(4) DRAIN(5) Packaging SO CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or Copyright Intersil Corporation 1999
2 Absolute Maximum Ratings T A = 25 o C, Unless Otherwise Specified HP441DY UNITS Drain to Source Voltage (Note 1) S 3 V Drain to Gate Voltage (R GS = 2kΩ) (Note 1) V DGR 3 V Gate to Source Voltage ±16 V Drain Current Continuous I D 1 Pulsed Drain Current (1µs Pulse Width) I DM 5 Power Dissipation P D Derate Above 25 o C Operating and Storage Temperature T J, T STG -55 to 15 o C Maximum Temperature for Soldering Leads at.63in (1.6mm) from Case for 1s T L 3 Package Body for 1s, See Techbrief T pkg 26 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T A = 25 o C to 125 o C. HP441DY A A W W/ o C o C o C Electrical Specifications T A = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BS I D = 25µA, = V V Gate to Source Threshold Voltage (TH) =, I D = 25µA (Figure 9) V Zero Gate Voltage Drain Current I DSS = 3V, = V µa = 3V, = V, T A = 55 o C µa Gate to Source Leakage Current I GSS = ±16V na Drain to Source On Resistance r DS(ON) I D = 8A, = 4.5V (Figures 6, 8) Ω I D = 1A, = 1V (Figures 6, 8) Ω Turn-On Delay Time t d(on) V DD = 25V, I D 1A, ns Rise Time t r R L = 25Ω, V GEN = 1V, R GS = 6Ω ns Turn-Off Delay Time t d(off) ns Fall Time t f ns Total Gate Charge Q g(tot) = 15V, = 1V, I D 1A nc Gate to Source Charge Q gs nc Gate to Drain Charge Q gd nc Input Capacitance C ISS = 25V, = V, f = 1MHz pf Output Capacitance C OSS (Figure 4) pf Reverse Transfer Capacitance C RSS pf Thermal Resistance Junction to Ambient R θja Pulse Width < 1s (Figure 11) Device Mounted on FR-4 Material Source to Drain Diode Specifications o C/W PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD I SD = 2.3A (Figure 7) V Reverse Recovery Time t rr I SD = 2.3A, di SD /dt = 1A/µs ns 8-4
3 HP441DY Typical Performance Curves Unless Otherwise Specified I D, DRAIN CURRENT (A) = 1V - 5V 4V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX 3V I D, DRAIN CURRENT (A) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T A = 125 o C -55 o C , DRAIN TO SOURCE VOLTAGE (V) 25 o C , GATE TO SOURCE VOLTAGE (V) FIGURE 1. OUTPUT CHARACTERISTICS FIGURE 2. TRANSFER CHARACTERISTICS r DS(ON), DRAIN TO SOURCE ON STATE RESISTANCE (W) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX = 4.5V = 1V C, CAPACITANCE (pf) C RSS C OSS = V, f = 1MHz C ISS = C GS + C GD C RSS = C GD C OSS = C DS + C GD C ISS I D, DRAIN CURRENT (A) , DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 4. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE, GATE TO SOURCE VOLTAGE (V) 1 VPULSE DS = 15V DURATION = 8µs I D DUTY = 1ACYCLE =.5% MAX Q g, GATE CHARGE (nc) NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE = 1V DURATION = 8µs DUTY I D = 1A CYCLE =.5% MAX T J, JUNCTION TEMPERATURE ( o C) 15 FIGURE 5. GATE TO SOURCE VOLTAGE vs GATE CHARGE FIGURE 6. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 8-5
4 HP441DY Typical Performance Curves Unless Otherwise Specified (Continued) I SD, SOURCE TO DRAIN CURRENT (A) 5 1 PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T J = 15 o C T J = 25 o C V SD, SOURCE TO DRAIN VOLTAGE (V) 1.4 r DS(ON), DRAIN TO SOURCE ON STATE RESISTANCE (W) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX I D = 1A , GATE TO SOURCE VOLTAGE (V) FIGURE 7. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE TO SOURCE VOLTAGE (TH) VARIANCE (V) I D = 25µA POWER (W) T J, JUNCTION TEMPERATURE ( o C) FIGURE 9. GATE THRESHOLD VOLTAGE VARIANCE vs JUNCTION TEMPERATURE t, PULSE WIDTH (s) FIGURE 1. SINGLE PULSE POWER CAPABILITY vs PULSE WIDTH 2 1 DUTY CYCLE =.5 Z θja, NORMALIZED THERMAL IMPEDANCE SINGLE PULSE P DM t 1 t 2 DUTY CYCLE, D = t 1 /t 2 T J = P D x Z θja x R θja + T A SURFACE MOUNTED t, RECTANGULAR PULSE DURATION (s) FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 8-6
5 HP441DY Test Circuits and Waveforms t ON t d(on) t OFF t d(off) R L t r t f 9% 9% + V DD - 1% 1% R GS DUT 1% 5% PULSE WIDTH 9% 5% FIGURE 12. SWITCHING TIME TEST CIRCUIT FIGURE 13. SWITCHING TIME WAVEFORM V DD R L Q gd Q g Q gs + V DD - I g(ref) DUT I g(ref) FIGURE 14. GATE CHARGE TEST CIRCUIT FIGURE 15. GATE CHARGE WsAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop Melbourne, FL 3292 TEL: (47) FAX: (47) For information regarding Intersil Corporation and its products, see web site EUROPE Intersil SA Mercure Center 1, Rue de la Fusee 113 Brussels, Belgium TEL: (32) FAX: (32) ASIA Intersil (Taiwan) Ltd. 7F-6, No. 11 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) FAX: (886)
6 This datasheet has been downloaded from: Datasheets for electronic components.
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UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
More informationMOSFET = 0V, I D = 10V, 29A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = ±30V, V DS = 0V) = 2.5mA)
V A.65Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by
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APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv
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HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationUNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC s advanced trench technology
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N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS tested High commutation performance
More informationCharacteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0.
General Description The MDD152 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD152 is suitable
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-Channel enhancement MOSFET, it uses UTC s advanced technology to provide customers with a minimum on-state
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UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationCharacteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.
General Description The MDU1514 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable
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UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
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UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationMOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA)
APT2M11JLL 2V A.11Ω POWER MOS 7 R Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement
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N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power
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APT2M11JFLL 2V A.11Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power
More informationPackaging. Symbol. A Pulsed Drain Current...I DM Refer to Peak Current Curve Single Pulse Avalanche Rating... E AS
December 1995 SEMICONDUCTOR RFD15P5, RFD15P5SM, RFP15P5 15A, 5V, Avalanche Rated, PChannel EnhancementMode Power MOSFETs Features 15A, 5V r DS(ON) =.15Ω Temperature Compensating PSPICE Model Peak Current
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General Description MDS1525 Single N-channel Trench MOSFET 3V, 16.9A, 1.1mΩ The MDS1525 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
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UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
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UNISONIC TECHNOLOGIES CO., LTD 24A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching
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UNISONIC TECHNOLOGIES CO., LTD UTT18P10-100V, -18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
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UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
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Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A
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