IRF510. Features. 5.6A, 100V, Ohm, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet June File Number 1573.

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1 IRF5 ata heet June 999 File Number A, V,.5 Ohm, N-Channel Power MOFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA7. Ordering Information PART NUMBER PACKAE BRAN IRF5 TO-AB IRF5 NOTE: When ordering, include the entire part number. Features 5.6A, V r (ON) =.5Ω ingle Pulse Avalanche Energy Rated OA is Power issipation Limited Nanosecond witching peeds Linear Transfer Characteristics High Input Impedance Related Literature - TB33 uidelines for oldering urface Mount Components to PC Boards ymbol Packaging JEEC TO-AB OURCE RAIN ATE RAIN (FLANE) 66 CAUTION: These devices are sensitive to electrostatic discharge; follow proper E Handling Procedures. or Copyright Intersil Corporation 999

2 Absolute Maximum Ratings T C = 5 o C, Unless Otherwise pecified IRF5 UNIT rain to ource Voltage (Note ) V rain to ate Voltage (R = kω) (Note ) V R V Continuous rain Current I 5.6 A T C = o C I A Pulsed rain Current (Note 3) I M A ate to ource Voltage ± V Maximum Power issipation p 3 W Linear erating Factor W/ o C ingle Pulse Avalanche Energy Rating (Note ) E A 9 mj Operating and torage Temperature Range T J,T T -55 to 75 o C Maximum Temperature for oldering Leads at.63in (.6mm) from Case for s T L 3 Package Body for s, ee Techbrief T pkg 6 o C o C CAUTION: tresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE:. T J = 5 o C to 5 o C. IRF5 Electrical pecifications T C = 5 o C, Unless Otherwise pecified PARAMETER YMBOL TET CONITION MIN TYP MAX UNIT rain to ource Breakdown Voltage B = V, I = 5µA, (Figure ) - - V ate to Threshold Voltage (TH) =, I = 5µA. -. V Zero-ate Voltage rain Current I = Rated B, = V µa =. x Rated B, = V, T J = 5 o C µa On-tate rain Current (Note ) I (ON) > I (ON) x r (ON)MAX, = V (Figure 7) A ate to ource Leakage Current I = ±V - - ± na rain to ource On Resistance (Note ) r (ON) = V, I = 3.A (Figures, 9) -..5 Ω Forward Transconductance (Note ) g fs = 5V, I = 3.A (Figure ).3. - Turn-On elay Time t d(on) I 5.6A, R = Ω, = 5V, R L = 9Ω, - ns Rise Time t = 5V, = V r ns MOFET switching times are essentially independent Turn-Off elay Time t d(off) of operating temperature - 5 ns Fall Time t f - ns Total ate Charge (ate to ource + ate to rain) Q g(tot) = V, I = 5.6A, =. x Rated B, I (REF) =.5mA (Figure ) ate charge is essentially independent of operating temperature nc ate to ource Charge Q gs -. - nc ate to rain Miller Charge Q gd nc Input Capacitance C I = V, = 5V, f =.MHz (Figure ) pf Output Capacitance C O - - pf Reverse-Transfer Capacitance C R - - pf Internal rain Inductance L Measured From the Contact crew On Tab To Center of ie Measured From the rain Lead, 6mm (.5in) From Package to Center of ie Modified MOFET ymbol howing the Internal evices Inductances nh nh L Internal ource Inductance L Measured From The nh ource Lead, 6mm (.5in) From Header to L ource Bonding Pad Junction to Case R θjc o C/W Junction to Ambient R θja Free air operation - - o C/W 67

3 IRF5 ource to rain iode pecifications PARAMETER YMBOL Test Conditions MIN TYP MAX UNIT Continuous ource to rain Current I Modified MOFET A ymbol howing the Pulse ource to rain Current I M Integral Reverse - - A (Note 3) P-N Junction iode ource to rain iode Voltage (Note ) V T J = 5 o C, I = 5.6A, = V (Figure 3) V Reverse Recovery Time t rr T J = 5 o C, I = 5.6A, di /d t = A/µs.6 96 ns Reverse Recovered Charge Q RR T J = 5 o C, I = 5.6A, di /d t = A/µs.7..3 µc NOTE:. Pulse test: pulse width 3µs, duty cycle %. 3. Repetitive rating: pulse width limited by max junction temperature. ee Transient Thermal Impedance curve (Figure 3).. = 5V, start T J = 5 o C, L = 9µH, R = 5Ω, peak I A = 5.6A. Typical Performance Curves Unless Otherwise pecified. POWER IIPATION MULTIPLIER I, RAIN CURRENT (A) T C, CAE TEMPERATURE ( o C) T C, CAE TEMPERATURE ( o C) FIURE. NORMALIZE POWER IIPATION vs CAE TEMPERATURE FIURE. MAXIMUM CONTINUOU RAIN CURRENT vs CAE TEMPERATURE Z θjc, TRANIENT THERMAL IMPEANCE ( o C/W) t INLE PULE t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z θjc + T C t, RECTANULAR PULE URATION () P M FIURE 3. MAXIMUM TRANIENT THERMAL IMPEANCE 6

4 IRF5 Typical Performance Curves Unless Otherwise pecified (Continued) I, RAIN CURRENT (A) OPERATION IN THI REION I LIMITE BY r (ON) µs µs ms T C = 5 o C C T J = 75 o C INLE PULE., RAIN TO OURCE VOLTAE (V) FIURE. FORWAR BIA AFE OPERATIN AREA 3 I, RAIN CURRENT (A) = V PULE URATION = µs UTY CYCLE =.5% MAX = V 6 = 7V = 6V = 5V = V 3 5, RAIN TO OURCE VOLTAE (V) FIURE 5. OUTPUT CHARACTERITIC I, RAIN CURRENT (A) 6 PULE URATION = µs UTY CYCLE =.5% MAX = V = V = 7V = 6V = 5V = V 6, RAIN TO OURCE VOLTAE (V) FIURE 6. ATURATION CHARACTERITIC I (ON), ON-TATE RAIN CURRENT (A) 5V PULE URATION = µs UTY CYCLE =.5% MAX T J = 75 o T C J = 5 o C. - 6, ATE TO OURCE VOLTAE (V) FIURE 7. TRANFER CHARACTERITIC r (ON), RAIN TO OURCE ON REITANCE (Ω) 5 3 PULE URATION = µs UTY CYCLE =.5% MAX = V = V NORMALIZE ON REITANCE I = 3.A, = V PULE URATION = µs UTY CYCLE =.5% MAX 6 I, RAIN CURRENT (A) T J, JUNCTION TEMPERATURE ( o C) FIURE. RAIN TO OURCE ON REITANCE vs ATE VOLTAE AN RAIN CURRENT FIURE 9. NORMALIZE RAIN TO OURCE ON REITANCE vs JUNCTION TEMPERATURE 69

5 IRF5 Typical Performance Curves Unless Otherwise pecified (Continued) NORMALIZE RAIN TO OURCE BREAKOWN VOLTAE.5 I = 5µA T J, JUNCTION TEMPERATURE ( o C) C, CAPACITANCE (pf) 5 = V, f = MHz C I = C + C C R = C C O C + C 3 C I C O C R 5 5, RAIN TO OURCE VOLTAE (V) FIURE. NORMALIZE RAIN TO OURCE BREAKOWN VOLTAE vs JUNCTION TEMPERATURE FIURE. CAPACITANCE vs RAIN TO OURCE VOLTAE g fs, TRANCONUCTANCE () PULE URATION = µs UTY CYCLE =.5% MAX 5V T J = 5 o C T J = 75 o C 6 I, RAIN CURRENT (A) I, OURCE TO RAIN CURRENT (A) PULE URATION = µs UTY CYCLE =.5% MAX T J = 75 o C T J = 5 o C V, OURCE TO RAIN VOLTAE (V) FIURE. TRANCONUCTANCE vs RAIN CURRENT FIURE 3. OURCE TO RAIN IOE VOLTAE, ATE TO OURCE VOLTAE (V) 6 I = 3.A = V = 5V = V 6 Q g, ATE CHARE (nc) FIURE. ATE TO OURCE VOLTAE vs ATE CHARE 7

6 IRF5 Test Circuits and Waveforms B L t P VARY t P TO OBTAIN REQUIRE PEAK I A R + - I A UT V t P I A.Ω t AV FIURE 5. UNCLAMPE ENERY TET CIRCUIT FIURE 6. UNCLAMPE ENERY WAVEFORM t ON t d(on) t OFF t d(off) R L t r t f 9% 9% + R - % % UT 9% % 5% PULE WITH 5% FIURE 7. WITCHIN TIME TET CIRCUIT FIURE. REITIVE WITCHIN WAVEFORM CURRENT REULATOR (IOLATE UPPLY) V BATTERY.µF 5kΩ.3µF AME TYPE A UT Q gs Q gd Q g(tot) UT I (REF) I CURRENT AMPLIN REITOR I CURRENT AMPLIN REITOR I (REF) FIURE 9. ATE CHARE TET CIRCUIT FIURE. ATE CHARE WAVEFORM 7

7 IRF5 All Intersil semiconductor products are manufactured, assembled and tested under IO9 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. ales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 3, Mail top 53- Melbourne, FL 39 TEL: (7) 7-7 FAX: (7) 7-7 For information regarding Intersil Corporation and its products, see web site EUROPE Intersil A Mercure Center, Rue de la Fusee 3 Brussels, Belgium TEL: (3).7. FAX: (3).7..5 AIA Intersil (Taiwan) Ltd. 7F-6, No. Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (6) FAX: (6)